ATE425277T1 - Verfahren zur herstellung eines sputtertargets und sputtertarget - Google Patents

Verfahren zur herstellung eines sputtertargets und sputtertarget

Info

Publication number
ATE425277T1
ATE425277T1 AT03776474T AT03776474T ATE425277T1 AT E425277 T1 ATE425277 T1 AT E425277T1 AT 03776474 T AT03776474 T AT 03776474T AT 03776474 T AT03776474 T AT 03776474T AT E425277 T1 ATE425277 T1 AT E425277T1
Authority
AT
Austria
Prior art keywords
sputter target
sputtering target
producing
forming
target assembly
Prior art date
Application number
AT03776474T
Other languages
English (en)
Inventor
Charles Wickersham
David Workman
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Application granted granted Critical
Publication of ATE425277T1 publication Critical patent/ATE425277T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21K—MAKING FORGED OR PRESSED METAL PRODUCTS, e.g. HORSE-SHOES, RIVETS, BOLTS OR WHEELS
    • B21K25/00—Uniting components to form integral members, e.g. turbine wheels and shafts, caulks with inserts, with or without shaping of the components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
AT03776474T 2002-10-21 2003-10-20 Verfahren zur herstellung eines sputtertargets und sputtertarget ATE425277T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41991602P 2002-10-21 2002-10-21

Publications (1)

Publication Number Publication Date
ATE425277T1 true ATE425277T1 (de) 2009-03-15

Family

ID=32176485

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03776474T ATE425277T1 (de) 2002-10-21 2003-10-20 Verfahren zur herstellung eines sputtertargets und sputtertarget

Country Status (10)

Country Link
US (1) US7467741B2 (de)
EP (1) EP1556526B1 (de)
JP (1) JP4768266B2 (de)
KR (1) KR101047722B1 (de)
CN (1) CN100526499C (de)
AT (1) ATE425277T1 (de)
AU (1) AU2003284294A1 (de)
DE (1) DE60326621D1 (de)
TW (1) TWI315747B (de)
WO (1) WO2004038062A2 (de)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4422975B2 (ja) * 2003-04-03 2010-03-03 株式会社コベルコ科研 スパッタリングターゲットおよびその製造方法
US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
ATE474071T1 (de) * 2003-08-11 2010-07-15 Honeywell Int Inc Target/trägerplatte-konstruktionen und herstellungsverfahren dafür
US20050061857A1 (en) * 2003-09-24 2005-03-24 Hunt Thomas J. Method for bonding a sputter target to a backing plate and the assembly thereof
US7431195B2 (en) * 2003-09-26 2008-10-07 Praxair S.T. Technology, Inc. Method for centering a sputter target onto a backing plate and the assembly thereof
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US20050178653A1 (en) * 2004-02-17 2005-08-18 Charles Fisher Method for elimination of sputtering into the backing plate of a target/backing plate assembly
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
EP1851166A2 (de) * 2005-01-12 2007-11-07 New York University System und verfahren zur verarbeitung von nanodrähten mit holographischen optischen pinzetten
US20060289304A1 (en) * 2005-06-22 2006-12-28 Guardian Industries Corp. Sputtering target with slow-sputter layer under target material
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) * 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9511446B2 (en) * 2014-12-17 2016-12-06 Aeroprobe Corporation In-situ interlocking of metals using additive friction stir processing
US9266191B2 (en) 2013-12-18 2016-02-23 Aeroprobe Corporation Fabrication of monolithic stiffening ribs on metallic sheets
CN101313083A (zh) * 2005-09-28 2008-11-26 卡伯特公司 形成溅射靶组件的惯性结合方法及由此制成的组件
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8647484B2 (en) 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
GB0620547D0 (en) * 2006-10-17 2006-11-22 Rolls Royce Plc Component joining
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US7981262B2 (en) * 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8968536B2 (en) * 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US7901552B2 (en) * 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
US8514476B2 (en) 2008-06-25 2013-08-20 View, Inc. Multi-pane dynamic window and method for making same
BRPI0915440B1 (pt) * 2008-07-07 2017-11-14 Constellium Switzerland Ag Process of fusion welding to join aluminum and titanium and joint submitted to brazing
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US20100089748A1 (en) * 2008-10-15 2010-04-15 C Forster John Control of erosion profile on a dielectric rf sputter target
TWI544099B (zh) * 2010-05-21 2016-08-01 烏明克公司 濺鍍標靶對支撐材料的非連續性接合
TWI516624B (zh) * 2010-06-18 2016-01-11 烏明克公司 用於接合濺鍍靶的組件之方法，濺鍍靶組件的接合總成，及其用途
US8460521B2 (en) * 2010-09-28 2013-06-11 Primestar Solar, Inc. Sputtering cathode having a non-bonded semiconducting target
EP2699708B1 (de) 2011-04-21 2018-11-14 View, Inc. Lithium-sputtertarget
CN109097746A (zh) 2011-06-30 2018-12-28 唯景公司 溅射靶和溅射方法
US8703233B2 (en) 2011-09-29 2014-04-22 H.C. Starck Inc. Methods of manufacturing large-area sputtering targets by cold spray
JP5779491B2 (ja) * 2011-12-13 2015-09-16 株式会社アルバック ターゲット装置、スパッタリング装置、ターゲット装置の製造方法
US8940985B2 (en) * 2012-02-29 2015-01-27 Dreadnought, Inc. Guitar neck joint routing system
US9341912B2 (en) 2012-03-13 2016-05-17 View, Inc. Multi-zone EC windows
US12578609B2 (en) 2012-03-13 2026-03-17 View Operating Corporation Methods of controlling multi-zone tintable windows
US11635666B2 (en) 2012-03-13 2023-04-25 View, Inc Methods of controlling multi-zone tintable windows
US12153320B2 (en) 2012-03-13 2024-11-26 View, Inc. Multi-zone EC windows
DE102012210621A1 (de) 2012-06-22 2013-12-24 Robert Bosch Gmbh Bauteileverbund, Verfahren zum Herstellen eines Bauteileverbunds sowie Verwendung eines Bauteileverbunds
CN103707002B (zh) * 2012-09-29 2016-04-13 宁波江丰电子材料股份有限公司 聚焦环及其形成方法
US10060023B2 (en) 2012-10-19 2018-08-28 Infineon Technologies Ag Backing plate for a sputter target, sputter target, and sputter device
US9534286B2 (en) * 2013-03-15 2017-01-03 Applied Materials, Inc. PVD target for self-centering process shield
CN103354210B (zh) * 2013-06-27 2016-08-10 清华大学 一种键合方法及采用该键合方法形成的键合结构
DE102013015676A1 (de) * 2013-09-23 2015-03-26 Gkn Sinter Metals Holding Gmbh Verfahren zur Herstellung eines Sinterteils mit höhenpräziser Formteilhöhe sowie Teilesatz aus Sinterfügeteilen
SG11201704051SA (en) 2014-12-03 2017-06-29 Ulvac Inc Target assembly
US20160167353A1 (en) * 2014-12-12 2016-06-16 GM Global Technology Operations LLC Systems and methods for joining components
CN104646817A (zh) * 2014-12-22 2015-05-27 有研亿金新材料有限公司 一种作为溅射靶材的铝靶材与铝合金背板的连接方法
CN104625389A (zh) * 2014-12-22 2015-05-20 有研亿金新材料有限公司 一种集成电路封装材料用铝合金溅射靶材的焊接方法
CN104646821A (zh) * 2015-01-08 2015-05-27 山东大学 一种钛合金与锆合金的气体保护摩擦焊方法
AU2016292362B2 (en) * 2015-07-13 2021-01-07 Albemarle Corporation Processes for low pressure, cold bonding of solid lithium to metal substrates
WO2019089764A1 (en) 2017-10-31 2019-05-09 Aeroprobe Corporation Solid-state additive manufacturing system and material compositions and structures
EP3632251B1 (de) * 2018-10-04 2023-03-29 Calzaturificio dal Bello S.R.L. Sportschuh und verfahren zur konstruktion davon
CN109578420A (zh) * 2019-01-16 2019-04-05 佛山市巨隆金属制品有限公司 焊接铝螺母及其焊接方法
CN110439941B (zh) * 2019-08-20 2020-12-29 重庆中帝机械制造股份有限公司 高稳定性铸锻式冲焊制动蹄
DE102019134680A1 (de) * 2019-12-17 2021-06-17 Kme Germany Gmbh Verfahren zur Herstellung eines Lotdepots sowie Lotdepot
US11424111B2 (en) * 2020-06-25 2022-08-23 Taiwan Semiconductor Manufacturing Company Limited Sputtering target assembly to prevent overetch of backing plate and methods of using the same
CN112475796B (zh) * 2020-11-11 2022-04-15 宁波江丰电子材料股份有限公司 一种靶材组件的焊接方法
US20260042142A1 (en) * 2024-08-12 2026-02-12 Honeywell International Inc. Mechanical locking sputtering target bonding method and target assemblies produced thereby

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3452421A (en) 1964-03-13 1969-07-01 Caterpillar Tractor Co Friction welding of dissimilar materials
US3693238A (en) 1970-10-02 1972-09-26 Aluminum Co Of America Friction welding of aluminum and ferrous workpieces
US3998376A (en) 1975-12-12 1976-12-21 Estan Manufacturing Company Method for forming a connection between two tubes
US4349954A (en) 1980-11-26 1982-09-21 The United States Of America As Represented By The United States National Aeronautics And Space Administration Mechanical bonding of metal method
JPS61291967A (ja) * 1985-06-18 1986-12-22 Matsushita Electric Ind Co Ltd スパツタリング用タ−ゲツト
CH669609A5 (de) * 1986-12-23 1989-03-31 Balzers Hochvakuum
JPS6452065A (en) * 1987-08-21 1989-02-28 Matsushita Electric Industrial Co Ltd Sputtering target
JPH03504743A (ja) * 1989-03-15 1991-10-17 バルツェルス　アクチェンゲゼルシャフト 目標物体侵食が設定可能な深度に達したことを検知する方法およびこれに用いる目標物体
US5230459A (en) 1992-03-18 1993-07-27 Tosoh Smd, Inc. Method of bonding a sputter target-backing plate assembly assemblies produced thereby
US5269899A (en) * 1992-04-29 1993-12-14 Tosoh Smd, Inc. Cathode assembly for cathodic sputtering apparatus
JP3525348B2 (ja) * 1992-09-29 2004-05-10 株式会社日鉱マテリアルズ 拡散接合されたスパッタリングターゲット組立体の製造方法
US5693203A (en) * 1992-09-29 1997-12-02 Japan Energy Corporation Sputtering target assembly having solid-phase bonded interface
US5286361A (en) 1992-10-19 1994-02-15 Regents Of The University Of California Magnetically attached sputter targets
JPH08176808A (ja) * 1993-04-28 1996-07-09 Japan Energy Corp 寿命警報機能を備えたスパッタリングタ−ゲット
US5342496A (en) * 1993-05-18 1994-08-30 Tosoh Smd, Inc. Method of welding sputtering target/backing plate assemblies
US6199259B1 (en) 1993-11-24 2001-03-13 Applied Komatsu Technology, Inc. Autoclave bonding of sputtering target assembly
JP4017198B2 (ja) * 1994-11-02 2007-12-05 日鉱金属株式会社 スパッタリングターゲットとバッキングプレートの接合方法
US5593082A (en) 1994-11-15 1997-01-14 Tosoh Smd, Inc. Methods of bonding targets to backing plate members using solder pastes and target/backing plate assemblies bonded thereby
WO1996015283A1 (en) 1994-11-15 1996-05-23 Tosoh Smd, Inc. Method of bonding targets to backing plate member
US5522535A (en) 1994-11-15 1996-06-04 Tosoh Smd, Inc. Methods and structural combinations providing for backing plate reuse in sputter target/backing plate assemblies
US5836506A (en) * 1995-04-21 1998-11-17 Sony Corporation Sputter target/backing plate assembly and method of making same
JPH1112716A (ja) 1997-06-19 1999-01-19 Seiko Epson Corp ロウ接用材料およびその製造方法
KR100642034B1 (ko) * 1998-09-11 2006-11-03 토소우 에스엠디, 인크 저온 스퍼터 타겟 접착방법 및 이 방법으로 제조된 타겟조립체
US6749103B1 (en) 1998-09-11 2004-06-15 Tosoh Smd, Inc. Low temperature sputter target bonding method and target assemblies produced thereby
US6725522B1 (en) 2000-07-12 2004-04-27 Tosoh Smd, Inc. Method of assembling target and backing plates
JP4409071B2 (ja) * 2000-09-05 2010-02-03 日鉱金属株式会社 銅又は銅合金製スパッタリングターゲット用バッキングプレートおよびその処理法
KR100824928B1 (ko) * 2000-12-15 2008-04-28 토소우 에스엠디, 인크 고전력 스퍼터링 작업을 위한 마찰 끼워 맞춤 타겟 조립체
EP1349682B1 (de) * 2000-12-18 2008-10-08 Tosoh Smd, Inc. Niedrigtemperaturverfahren zur sputtertarget/grundplatten-verbindung und dadurch hergestellte anordnungen

Also Published As

Publication number Publication date
CN100526499C (zh) 2009-08-12
KR101047722B1 (ko) 2011-07-08
EP1556526B1 (de) 2009-03-11
TWI315747B (en) 2009-10-11
KR20050084863A (ko) 2005-08-29
JP2006508239A (ja) 2006-03-09
TW200502416A (en) 2005-01-16
WO2004038062A3 (en) 2004-12-09
DE60326621D1 (de) 2009-04-23
CN1726301A (zh) 2006-01-25
AU2003284294A1 (en) 2004-05-13
EP1556526A2 (de) 2005-07-27
US7467741B2 (en) 2008-12-23
JP4768266B2 (ja) 2011-09-07
US20040079634A1 (en) 2004-04-29
WO2004038062A2 (en) 2004-05-06

Similar Documents

Publication Publication Date Title
DE60326621D1 (de) Verfahren zur herstellung eines sputtertargets und sputtertarget
BRPI0414809A (pt) ácidos de benzotiofeno de naftila substituìdos
DE60023176T2 (de) Sputtertarget und verfahren zur herstellung eines solchen targets
WO2003090691A3 (en) Method and compositions for identifying anti-hiv therapeutic compounds
BR0308681A (pt) Métodos de fabricação de derivados de ácido beta-hidroxicarboxìlico
WO2004090201A3 (fr) Procede de fabrication de cristaux monocristallins
BR0116969A (pt) método e sistema de gerenciamento de resìduo
ATE359384T1 (de) Verfahren zur herstellung eines zerstäubungstargets
MY148713A (en) Magnetic shield panel
ATE467420T1 (de) Verfahren zur verwendung von guava-extrakt und zusammensetzung mit guava-extrakt
MY142816A (en) Substrate for information recording medium, information recording medium and process for producing the medium
ATE507200T1 (de) Klare photopolymerisierbare systeme zur herstellung von beschichtungen grosser dicke
TW200802329A (en) Modification
DE59708015D1 (de) Verfahren zur herstellung eines stoffverbunds
SG128539A1 (en) Tunable magnetic recording medium and its fabricating method
ATE476269T1 (de) Verfahren zur herstellung von rasierklingen
TW200518058A (en) Thin film with exchange coupling between magnetic grains of the thin film
TW200602507A (en) Sputtering target and manufacturing method therefor
DE602004010927D1 (de) Mikroelektromechanische hochfrequenz-systeme und verfahren zur herstellung solcher systeme
AU2003254621A8 (en) Metallic object with a nucleic acid coating and derivatives thereof and method for producing said object
ATE481511T1 (de) Sputterverfahren zur herstellung von eigenspannungsoptimierten beschichtungen
AU2003293803A1 (en) 17.beta- (alpha-hydroxy) -esters of androstanes as intermediates for the preparation for the preparation of 17.beta.-fluorinated-androstane esters
WO2004038059A3 (en) Target designs and related methods for enhanced cooling and reduced deflection and deformation
WO2004081220A3 (en) A process for enzymatically resolving an enantiomeric mixture of alpha-hydroxy acids
DE60325894D1 (de) Stereoselektiver prozess zur herstellung von nukleosidanalogen dioxolan-derivaten

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification

Ref document number: 1556526

Country of ref document: EP

REN Ceased due to non-payment of the annual fee