ATE439681T1 - Organische polymere, elektronische vorrichtungen und verfahren - Google Patents
Organische polymere, elektronische vorrichtungen und verfahrenInfo
- Publication number
- ATE439681T1 ATE439681T1 AT04760816T AT04760816T ATE439681T1 AT E439681 T1 ATE439681 T1 AT E439681T1 AT 04760816 T AT04760816 T AT 04760816T AT 04760816 T AT04760816 T AT 04760816T AT E439681 T1 ATE439681 T1 AT E439681T1
- Authority
- AT
- Austria
- Prior art keywords
- group
- independently
- electronic devices
- organic
- methods
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/68—Organic materials, e.g. photoresists
- H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/14—Organic dielectrics
- H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
- H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistors, capacitors or inductors
- H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistors, capacitors or inductors incorporating printed capacitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
- Y10T428/31692—Next to addition polymer from unsaturated monomers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physics & Mathematics (AREA)
- Thin Film Transistor (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Formation Of Insulating Films (AREA)
- Macromonomer-Based Addition Polymer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/434,377 US7098525B2 (en) | 2003-05-08 | 2003-05-08 | Organic polymers, electronic devices, and methods |
| PCT/US2004/011986 WO2004102652A1 (en) | 2003-05-08 | 2004-04-16 | Organic polymers, electronic devices, and methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE439681T1 true ATE439681T1 (de) | 2009-08-15 |
Family
ID=33416675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04760816T ATE439681T1 (de) | 2003-05-08 | 2004-04-16 | Organische polymere, elektronische vorrichtungen und verfahren |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US7098525B2 (de) |
| EP (1) | EP1620885B1 (de) |
| JP (1) | JP4668916B2 (de) |
| KR (1) | KR20060009320A (de) |
| CN (2) | CN1813343A (de) |
| AT (1) | ATE439681T1 (de) |
| DE (1) | DE602004022534D1 (de) |
| TW (1) | TW200505950A (de) |
| WO (1) | WO2004102652A1 (de) |
Families Citing this family (119)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10247817A1 (de) * | 2002-10-14 | 2004-04-22 | Infineon Technologies Ag | Polymertransistor-Anordnung, integrierte Schaltkreis-Anordnung und Verfahren zum Herstellen einer Polymertransistor-Anordnung |
| US7279777B2 (en) * | 2003-05-08 | 2007-10-09 | 3M Innovative Properties Company | Organic polymers, laminates, and capacitors |
| WO2004100281A1 (en) * | 2003-05-12 | 2004-11-18 | Cambridge University Technical Services Limited | Polymer transistor |
| DE10324533A1 (de) * | 2003-05-28 | 2004-12-16 | H.C. Starck Gmbh | Stabile Lösungen von organischen halbleitenden Verbindungen |
| JP4470398B2 (ja) * | 2003-06-23 | 2010-06-02 | Ｔｄｋ株式会社 | 電界効果トランジスタ |
| JP4228204B2 (ja) * | 2003-07-07 | 2009-02-25 | セイコーエプソン株式会社 | 有機トランジスタの製造方法 |
| TWI221341B (en) * | 2003-09-18 | 2004-09-21 | Ind Tech Res Inst | Method and material for forming active layer of thin film transistor |
| JP2005136383A (ja) * | 2003-10-09 | 2005-05-26 | Canon Inc | 有機半導体素子、その製造方法および有機半導体装置 |
| KR100697511B1 (ko) * | 2003-10-21 | 2007-03-20 | 삼성전자주식회사 | 광경화성 반도체 나노결정, 반도체 나노결정 패턴형성용 조성물 및 이들을 이용한 반도체 나노결정의 패턴 형성 방법 |
| EP1617484A1 (de) * | 2003-12-08 | 2006-01-18 | Matsushita Electric Industrial Co., Ltd. | Feldeffekttransistor, array elektrischer und herstellungsverfahren dafür |
| US20050137281A1 (en) * | 2003-12-18 | 2005-06-23 | 3M Innovative Properties Company | Printable dielectric materials, devices, and methods |
| JP4544913B2 (ja) * | 2004-03-24 | 2010-09-15 | 富士フイルム株式会社 | 表面グラフト形成方法、導電性膜の形成方法、金属パターン形成方法、多層配線板の形成方法、表面グラフト材料、及び導電性材料 |
| US7256436B2 (en) * | 2004-03-30 | 2007-08-14 | Shin-Etsu Chemical Co., Ltd. | Thin-film field-effect transistors and making method |
| US7479362B2 (en) * | 2004-04-29 | 2009-01-20 | Seiko Epson Corporation | UV decomposable molecules and a photopatternable monomolecular film formed therefrom |
| KR100560796B1 (ko) * | 2004-06-24 | 2006-03-13 | 삼성에스디아이 주식회사 | 유기 박막트랜지스터 및 그의 제조방법 |
| EP1648040B1 (de) * | 2004-08-31 | 2016-06-01 | Osaka University | Chemischer Dünnschichttransistor und seine Herstellung |
| KR100606655B1 (ko) * | 2004-09-22 | 2006-08-01 | 한국전자통신연구원 | 광반응성 유기고분자 게이트 절연막 조성물 및 이를이용한 유기박막 트랜지스터 |
| US7399668B2 (en) * | 2004-09-30 | 2008-07-15 | 3M Innovative Properties Company | Method for making electronic devices having a dielectric layer surface treatment |
| US7358571B2 (en) * | 2004-10-20 | 2008-04-15 | Taiwan Semiconductor Manufacturing Company | Isolation spacer for thin SOI devices |
| US7265063B2 (en) * | 2004-10-22 | 2007-09-04 | Hewlett-Packard Development Company, L.P. | Method of forming a component having dielectric sub-layers |
| DE102004052266A1 (de) * | 2004-10-27 | 2006-06-01 | Infineon Technologies Ag | Integrierte Analogschaltung in Schaltkondesatortechnik sowie Verfahren zu deren Herstellung |
| US20060113569A1 (en) * | 2004-11-03 | 2006-06-01 | Akinwande Akintunde I | Control of threshold voltage in organic field effect transistors |
| US7315042B2 (en) * | 2004-11-18 | 2008-01-01 | 3M Innovative Properties Company | Semiconductors containing trans-1,2-bis(acenyl)ethylene compounds |
| US20060105199A1 (en) * | 2004-11-18 | 2006-05-18 | 3M Innovative Properties Company | Electroluminescent devices containing trans-1,2-bis(acenyl)ethylene compounds |
| US20060128165A1 (en) * | 2004-12-13 | 2006-06-15 | 3M Innovative Properties Company | Method for patterning surface modification |
| KR101086159B1 (ko) * | 2005-01-07 | 2011-11-25 | 삼성전자주식회사 | 불소계 고분자 박막을 포함하는 유기 박막 트랜지스터 |
| US7211679B2 (en) * | 2005-03-09 | 2007-05-01 | 3M Innovative Properties Company | Perfluoroether acyl oligothiophene compounds |
| US7151276B2 (en) * | 2005-03-09 | 2006-12-19 | 3M Innovative Properties Company | Semiconductors containing perfluoroether acyl oligothiophene compounds |
| US20060214154A1 (en) * | 2005-03-24 | 2006-09-28 | Eastman Kodak Company | Polymeric gate dielectrics for organic thin film transistors and methods of making the same |
| US20060231908A1 (en) * | 2005-04-13 | 2006-10-19 | Xerox Corporation | Multilayer gate dielectric |
| US20060231829A1 (en) * | 2005-04-13 | 2006-10-19 | Xerox Corporation | TFT gate dielectric with crosslinked polymer |
| US8741442B2 (en) * | 2005-04-15 | 2014-06-03 | General Electric Company | Modified electrodes using functional organic materials and electronic devices therefrom |
| US20060270066A1 (en) * | 2005-04-25 | 2006-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Organic transistor, manufacturing method of semiconductor device and organic transistor |
| US7705346B2 (en) * | 2005-06-06 | 2010-04-27 | Xerox Corporation | Barrier layer for an organic electronic device |
| US7507618B2 (en) * | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
| US7319153B2 (en) * | 2005-07-29 | 2008-01-15 | 3M Innovative Properties Company | 6,13-Bis(thienyl)pentacene compounds |
| KR20070018456A (ko) * | 2005-08-10 | 2007-02-14 | 삼성전자주식회사 | 표시장치용 기판, 그 제조방법, 그 검사방법 및 이를 갖는액정표시장치 |
| US7414262B2 (en) * | 2005-09-30 | 2008-08-19 | Lexmark International, Inc. | Electronic devices and methods for forming the same |
| US7498662B2 (en) * | 2005-11-18 | 2009-03-03 | 3M Innovative Properties Company | Dielectric media including surface-treated metal oxide particles |
| US20070128465A1 (en) * | 2005-12-05 | 2007-06-07 | General Electric Company | Transparent electrode for organic electronic devices |
| KR100670379B1 (ko) * | 2005-12-15 | 2007-01-16 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터, 그 제조방법 및 이를 구비한 유기발광 디스플레이 장치 |
| WO2007075965A2 (en) | 2005-12-20 | 2007-07-05 | Northwestern University | Inorganic-organic hybrid thin-film transistors using inorganic semiconducting films |
| US7514710B2 (en) * | 2005-12-28 | 2009-04-07 | 3M Innovative Properties Company | Bottom gate thin film transistors |
| US20070146426A1 (en) * | 2005-12-28 | 2007-06-28 | Nelson Brian K | All-inkjet printed thin film transistor |
| EP1977462A1 (de) | 2006-01-09 | 2008-10-08 | Technion Research and Development Foundation Ltd. | Transistorstrukturen und herstellungsverfahren dafür |
| US8138075B1 (en) | 2006-02-06 | 2012-03-20 | Eberlein Dietmar C | Systems and methods for the manufacture of flat panel devices |
| TW200730978A (en) * | 2006-02-08 | 2007-08-16 | Wintek Corp | Active matrix liquid crystal display and pixel structure thereof |
| KR101186725B1 (ko) * | 2006-02-21 | 2012-09-28 | 삼성전자주식회사 | 불소계 고분자 박막을 포함하는 유기 박막 트랜지스터 및 이의 제조방법 |
| WO2007099690A1 (ja) * | 2006-02-28 | 2007-09-07 | Pioneer Corporation | 有機トランジスタ及びその製造方法 |
| US8124172B2 (en) * | 2006-03-02 | 2012-02-28 | E.I. Du Pont De Nemours And Company | Process for making contained layers and devices made with same |
| US7667230B2 (en) * | 2006-03-31 | 2010-02-23 | 3M Innovative Properties Company | Electronic devices containing acene-thiophene copolymers |
| US7608679B2 (en) * | 2006-03-31 | 2009-10-27 | 3M Innovative Properties Company | Acene-thiophene copolymers |
| US7666968B2 (en) * | 2006-04-21 | 2010-02-23 | 3M Innovative Properties Company | Acene-thiophene copolymers with silethynly groups |
| US7495251B2 (en) * | 2006-04-21 | 2009-02-24 | 3M Innovative Properties Company | Electronic devices containing acene-thiophene copolymers with silylethynyl groups |
| US20080161464A1 (en) * | 2006-06-28 | 2008-07-03 | Marks Tobin J | Crosslinked polymeric dielectric materials and methods of manufacturing and use thereof |
| US8012564B2 (en) | 2006-07-24 | 2011-09-06 | Alcatel Lucent | Nanoparticle dispersions with low aggregation levels |
| KR101224723B1 (ko) * | 2006-09-15 | 2013-01-21 | 삼성전자주식회사 | 유기 절연막 조성물, 이를 이용하여 제조된 유기 절연막 및유기 박막 트랜지스터 |
| JP4581062B2 (ja) * | 2006-10-20 | 2010-11-17 | 日本化薬株式会社 | 電界効果トランジスタ、半導体デバイス作製用インク、電界効果トランジスタの製造方法、および有機複素環化合物 |
| US7981989B2 (en) * | 2006-11-28 | 2011-07-19 | Polyera Corporation | Photopolymer-based dielectric materials and methods of preparation and use thereof |
| JP5320746B2 (ja) * | 2007-03-28 | 2013-10-23 | 凸版印刷株式会社 | 薄膜トランジスタ |
| US7754510B2 (en) * | 2007-04-02 | 2010-07-13 | Xerox Corporation | Phase-separated dielectric structure fabrication process |
| US7795614B2 (en) * | 2007-04-02 | 2010-09-14 | Xerox Corporation | Device with phase-separated dielectric structure |
| WO2009005902A1 (en) * | 2007-06-28 | 2009-01-08 | 3M Innovative Properties Company | Method for forming gate structures |
| US20090001356A1 (en) * | 2007-06-29 | 2009-01-01 | 3M Innovative Properties Company | Electronic devices having a solution deposited gate dielectric |
| US7879688B2 (en) * | 2007-06-29 | 2011-02-01 | 3M Innovative Properties Company | Methods for making electronic devices with a solution deposited gate dielectric |
| KR100878449B1 (ko) | 2007-08-08 | 2009-01-19 | 한국화학연구원 | 유기절연체의 신규 표면 처리 방법 및 이를 적용한유기박막트랜지스터 |
| JP2009047879A (ja) * | 2007-08-20 | 2009-03-05 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置及びその製造方法、電子機器 |
| US7709370B2 (en) | 2007-09-20 | 2010-05-04 | International Business Machines Corporation | Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures |
| US8618663B2 (en) * | 2007-09-20 | 2013-12-31 | International Business Machines Corporation | Patternable dielectric film structure with improved lithography and method of fabricating same |
| US8084862B2 (en) | 2007-09-20 | 2011-12-27 | International Business Machines Corporation | Interconnect structures with patternable low-k dielectrics and method of fabricating same |
| CN101399316B (zh) * | 2007-09-27 | 2010-09-15 | 财团法人工业技术研究院 | 有机薄膜晶体管以及控制高分子材料层表面能的方法 |
| JP5337811B2 (ja) * | 2007-10-26 | 2013-11-06 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 閉じ込め層を製造するための方法および材料、ならびにそれを使用して製造したデバイス |
| KR20090065254A (ko) * | 2007-12-17 | 2009-06-22 | 한국전자통신연구원 | 광반응성 유기고분자 게이트 절연막 조성물 및 이를 이용한유기 박막 트랜지스터 |
| EP2227512A1 (de) * | 2007-12-18 | 2010-09-15 | Lumimove, Inc., Dba Crosslink | Flexible elektrolumineszenzvorrichtungen und systeme |
| US7994495B2 (en) * | 2008-01-16 | 2011-08-09 | Xerox Corporation | Organic thin film transistors |
| GB2458940B (en) * | 2008-04-03 | 2010-10-06 | Cambridge Display Tech Ltd | Organic thin film transistors |
| CN102124015B (zh) * | 2008-05-30 | 2015-03-11 | 3M创新有限公司 | 甲硅烷基乙炔基并五苯化合物和组合物及其制备和使用方法 |
| CN102106012B (zh) * | 2008-06-11 | 2013-05-29 | 3M创新有限公司 | 用于沉积有机半导体的混合溶剂体系 |
| JP5199752B2 (ja) * | 2008-06-30 | 2013-05-15 | 住友化学株式会社 | 有機薄膜トランジスタ及びその製造方法、並びにこの有機トランジスタを用いたディスプレイ用部材及びディスプレイ |
| JP2010007030A (ja) * | 2008-06-30 | 2010-01-14 | Sumitomo Chemical Co Ltd | 絶縁層用組成物 |
| US20100006841A1 (en) * | 2008-07-11 | 2010-01-14 | International Business Machines Corporation | Dual metal gate transistor with resistor having dielectric layer between metal and polysilicon |
| JP5334039B2 (ja) * | 2008-09-01 | 2013-11-06 | 国立大学法人大阪大学 | 有機電界効果トランジスター及びその製造方法 |
| US8154080B2 (en) * | 2008-12-05 | 2012-04-10 | Xerox Corporation | Dielectric structure having lower-k and higher-k materials |
| JP5630036B2 (ja) * | 2009-05-07 | 2014-11-26 | セイコーエプソン株式会社 | 有機トランジスター、有機トランジスターの製造方法、電気光学装置および電子機器 |
| US8853820B2 (en) | 2009-05-25 | 2014-10-07 | Basf Se | Crosslinkable dielectrics and methods of preparation and use thereof |
| US8920679B2 (en) | 2009-05-29 | 2014-12-30 | 3M Innovative Properties Co. | Fluorinated silylethynyl pentacene compounds and compositions and methods of making and using the same |
| JP5730872B2 (ja) * | 2009-07-23 | 2015-06-10 | プロテウス デジタル ヘルス， インコーポレイテッド | 固体薄膜コンデンサ |
| CN102470660B (zh) * | 2009-07-27 | 2014-11-19 | E.I.内穆尔杜邦公司 | 制造围阻层的方法和材料以及由其制成的器件 |
| US7948016B1 (en) * | 2009-11-03 | 2011-05-24 | 3M Innovative Properties Company | Off-center deposition of organic semiconductor in an organic semiconductor device |
| TWI422573B (zh) * | 2010-02-11 | 2014-01-11 | Nat Univ Tsing Hua | 有機薄膜電晶體暨其製備方法 |
| JP5652005B2 (ja) * | 2010-06-03 | 2015-01-14 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法、ならびに電子機器 |
| US8883546B2 (en) * | 2010-09-02 | 2014-11-11 | Merck Patent Gmbh | Process for preparing an organic electronic device |
| US20120305892A1 (en) * | 2010-12-08 | 2012-12-06 | Martin Thornton | Electronic device, method of manufacturing a device and apparatus for manufacturing a device |
| CN102176373B (zh) * | 2011-02-14 | 2012-08-22 | 扬州凯普电子有限公司 | 一种大容量蓄能电容器 |
| GB201108865D0 (en) * | 2011-05-26 | 2011-07-06 | Ct For Process Innovation The Ltd | Semiconductor compounds |
| GB201108864D0 (en) * | 2011-05-26 | 2011-07-06 | Ct For Process Innovation The Ltd | Transistors and methods of making them |
| GB2491810B (en) | 2011-05-31 | 2018-03-21 | Smartkem Ltd | Organic semiconductor compositions |
| GB201203159D0 (en) | 2012-02-23 | 2012-04-11 | Smartkem Ltd | Organic semiconductor compositions |
| JP2013219172A (ja) | 2012-04-09 | 2013-10-24 | Sony Corp | 電子デバイス及びその製造方法並びに画像表示装置 |
| JP5887244B2 (ja) * | 2012-09-28 | 2016-03-16 | 富士フイルム株式会社 | パターン形成用自己組織化組成物、それを用いたブロックコポリマーの自己組織化によるパターン形成方法、及び自己組織化パターン、並びに電子デバイスの製造方法 |
| ES2683293T3 (es) | 2013-08-28 | 2018-09-26 | Smartkem Limited | Composiciones semiconductoras orgánicas poliméricas |
| KR20160038700A (ko) * | 2014-09-30 | 2016-04-07 | 주식회사 엘지화학 | 중성층 조성물 |
| KR20160000753A (ko) * | 2014-06-25 | 2016-01-05 | 삼성전기주식회사 | 박막형 커패시터 소자 및 이의 제조 방법 |
| WO2016046659A1 (en) * | 2014-09-25 | 2016-03-31 | Basf Se | Ether-based polymers as photo-crosslinkable dielectrics |
| US9809720B2 (en) * | 2015-07-06 | 2017-11-07 | University Of Massachusetts | Ferroelectric nanocomposite based dielectric inks for reconfigurable RF and microwave applications |
| US9647200B1 (en) | 2015-12-07 | 2017-05-09 | International Business Machines Corporation | Encapsulation of magnetic tunnel junction structures in organic photopatternable dielectric material |
| WO2017103914A1 (en) * | 2015-12-17 | 2017-06-22 | Regentis Biomaterials Ltd. | Ready for use organic solvent free compositions comprising protein-polymer conjugates and uses thereof |
| JPWO2019059169A1 (ja) * | 2017-09-22 | 2020-09-03 | 東レ株式会社 | 透明感光性樹脂組成物、フォトスペーサー、液晶表示装置、フォトスペーサーの製造方法、液晶表示装置の製造方法および透明感光性樹脂組成物のレンズスキャン露光への使用 |
| WO2019108423A2 (en) * | 2017-11-30 | 2019-06-06 | 3M Innovative Properties Company | Substrate including a self-supporting tri-layer stack |
| US20190297758A1 (en) * | 2018-03-23 | 2019-09-26 | Intel IP Corporation | Electromagnetic shielding cap, an electrical system and a method for forming an electromagnetic shielding cap |
| US10839992B1 (en) | 2019-05-17 | 2020-11-17 | Raytheon Company | Thick film resistors having customizable resistances and methods of manufacture |
| WO2021095766A1 (ja) * | 2019-11-12 | 2021-05-20 | Jsr株式会社 | 組成物、基板の製造方法及び重合体 |
| CN111574668B (zh) * | 2020-03-25 | 2022-05-10 | 西南科技大学 | 含可水解硅氧烷的嵌段共聚物、树脂及其制备方法 |
| JP2023023113A (ja) * | 2021-08-04 | 2023-02-16 | 日本化薬株式会社 | 硬化性高分子化合物を含む樹脂組成物 |
| CN113972068B (zh) * | 2021-10-13 | 2023-08-11 | 四川圣融达容阻科技有限公司 | 一种玻璃釉电容器及其制备方法 |
| US11945966B2 (en) * | 2021-12-09 | 2024-04-02 | Canon Kabushiki Kaisha | Photocurable composition with enhanced thermal stability |
| CN114702626B (zh) * | 2022-03-29 | 2023-09-12 | 成都翊昂科技有限公司 | 腈类聚合物电解质基体材料、电解质及电池 |
| CN115872900B (zh) * | 2022-12-05 | 2025-03-18 | 深圳湾实验室坪山生物医药研发转化中心 | 烷基自由基生成和捕获的方法及其产物与产物的应用 |
| CN116903492A (zh) * | 2023-07-14 | 2023-10-20 | 香河昆仑新能源材料股份有限公司 | 一种2-(4-乙烯基苯基)乙腈的制备方法 |
Family Cites Families (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4034014A (en) | 1970-10-16 | 1977-07-05 | Allied Chemical Corporation | Production of polyanhydride epoxide prepolymer compositions |
| US4066925A (en) | 1976-08-03 | 1978-01-03 | Minnesota Mining And Manufacturing Company | Electroluminescent lamp and electrode preform for use therewith |
| US4335180A (en) | 1978-12-26 | 1982-06-15 | Rogers Corporation | Microwave circuit boards |
| JPS5931521B2 (ja) | 1979-07-23 | 1984-08-02 | 信越化学工業株式会社 | シアノエチルプルランおよびその製造方法 |
| US4554324A (en) | 1982-09-16 | 1985-11-19 | Minnesota Mining And Manufacturing Co. | Acrylate copolymer pressure-sensitive adhesive composition and sheet materials coated therewith |
| GB8715959D0 (en) | 1987-07-07 | 1987-08-12 | British Petroleum Co Plc | Field effect transistors |
| US5126915A (en) | 1989-07-28 | 1992-06-30 | E. I. Du Pont De Nemours And Company | Metal oxide-coated electrically conductive powders and compositions thereof |
| US5408023A (en) | 1989-10-23 | 1995-04-18 | The Dow Chemical Company | Preparation of modified vinyl polymers |
| US5593782A (en) | 1992-07-13 | 1997-01-14 | Minnesota Mining And Manufacturing Company | Encapsulated electroluminescent phosphor and method for making same |
| FR2664430B1 (fr) | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
| WO1992011580A1 (en) | 1990-12-19 | 1992-07-09 | Allied-Signal Inc. | Photodefinable interlevel dielectrics |
| US5085886A (en) | 1990-12-19 | 1992-02-04 | Allied-Signal Inc. | Photodefinable interlevel dielectrics |
| JPH04221939A (ja) * | 1990-12-25 | 1992-08-12 | Nippon Oil & Fats Co Ltd | 有機高分子非線形光学材料 |
| JPH068653A (ja) * | 1992-06-26 | 1994-01-18 | Lintec Corp | 熱転写紙 |
| US5358775A (en) | 1993-07-29 | 1994-10-25 | Rogers Corporation | Fluoropolymeric electrical substrate material exhibiting low thermal coefficient of dielectric constant |
| NO314475B1 (no) | 1994-03-24 | 2003-03-24 | Nippon Petrochemicals Co Ltd | Elektrisk isolerende polymermateriale og anvendelse derav |
| JP3994441B2 (ja) * | 1995-01-09 | 2007-10-17 | 松下電器産業株式会社 | 電界効果トランジスタ |
| US5545510A (en) | 1995-03-28 | 1996-08-13 | Mac Dermid, Inc. | Photodefinable dielectric composition useful in the manufacture of printed circuits |
| US6099939A (en) | 1995-04-13 | 2000-08-08 | International Business Machines Corporation | Enhanced adhesion between a vapor deposited metal and an organic polymer surface exhibiting tailored morphology |
| EP0753985B1 (de) | 1995-07-14 | 2000-03-01 | Matsushita Electric Industrial Co., Ltd. | Lumineszenzelement, Methode zur Herstellung desselben, und beleuchtetes Schaltelement damit |
| US5844168A (en) * | 1995-08-01 | 1998-12-01 | Minnesota Mining And Manufacturing Company | Multi-layer interconnect sutructure for ball grid arrays |
| AU7256496A (en) | 1995-10-17 | 1997-05-07 | Minnesota Mining And Manufacturing Company | Method for radiation-induced thermal transfer of resist for flexible printed circuitry |
| US5739193A (en) | 1996-05-07 | 1998-04-14 | Hoechst Celanese Corp. | Polymeric compositions having a temperature-stable dielectric constant |
| ATE215105T1 (de) | 1996-11-04 | 2002-04-15 | Goodrich Co B F | Photostrukturierbare dielektrische zusammensetzungen |
| JPH10143098A (ja) | 1996-11-08 | 1998-05-29 | Minnesota Mining & Mfg Co <3M> | 自発光可能な再帰性反射シートおよび反射性標識 |
| JP3477338B2 (ja) | 1997-03-06 | 2003-12-10 | サンスター技研株式会社 | 有機分散型エレクトロルミネッセンス素子およびその発光層用組成物 |
| EP0902048B1 (de) | 1997-09-11 | 2005-11-23 | E.I. Du Pont De Nemours And Company | Flexible Polyimidfolie mit hoher dielektrischer Konstante |
| US6506438B2 (en) | 1998-12-15 | 2003-01-14 | E Ink Corporation | Method for printing of transistor arrays on plastic substrates |
| US6274224B1 (en) | 1999-02-01 | 2001-08-14 | 3M Innovative Properties Company | Passive electrical article, circuit articles thereof, and circuit articles comprising a passive electrical article |
| US6184325B1 (en) | 1999-03-16 | 2001-02-06 | Isp Investments Inc. | Solvent-free, fine white powders of high molecular weight copolymers of maleic anhydride and a C1-C4 alky vinyl ether without odor or taste |
| US6265243B1 (en) | 1999-03-29 | 2001-07-24 | Lucent Technologies Inc. | Process for fabricating organic circuits |
| US6335539B1 (en) | 1999-11-05 | 2002-01-01 | International Business Machines Corporation | Method for improving performance of organic semiconductors in bottom electrode structure |
| GB2359385B (en) * | 2000-02-16 | 2004-04-07 | Data Connection Ltd | Method for upgrading running software processes without compromising fault-tolerance |
| US6544651B2 (en) | 2000-05-18 | 2003-04-08 | Georgia Tech Research Corp. | High dielectric constant nano-structure polymer-ceramic composite |
| US6586791B1 (en) | 2000-07-19 | 2003-07-01 | 3M Innovative Properties Company | Transistor insulator layer incorporating superfine ceramic particles |
| US6433359B1 (en) | 2001-09-06 | 2002-08-13 | 3M Innovative Properties Company | Surface modifying layers for organic thin film transistors |
| US20030097010A1 (en) | 2001-09-27 | 2003-05-22 | Vogel Dennis E. | Process for preparing pentacene derivatives |
| ATE331304T1 (de) | 2001-09-27 | 2006-07-15 | 3M Innovative Properties Co | Halbleiter auf basis von substituiertem pentacen |
| US6617609B2 (en) | 2001-11-05 | 2003-09-09 | 3M Innovative Properties Company | Organic thin film transistor with siloxane polymer interface |
| US6946676B2 (en) | 2001-11-05 | 2005-09-20 | 3M Innovative Properties Company | Organic thin film transistor with polymeric interface |
| US20030151384A1 (en) * | 2002-02-12 | 2003-08-14 | Woodward Richard C. | 2-start, 4 pole single-phase motor |
| US20030151118A1 (en) * | 2002-02-14 | 2003-08-14 | 3M Innovative Properties Company | Aperture masks for circuit fabrication |
| US6897164B2 (en) | 2002-02-14 | 2005-05-24 | 3M Innovative Properties Company | Aperture masks for circuit fabrication |
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2003
- 2003-05-08 US US10/434,377 patent/US7098525B2/en not_active Expired - Fee Related
-
2004
- 2004-04-16 EP EP04760816A patent/EP1620885B1/de not_active Expired - Lifetime
- 2004-04-16 WO PCT/US2004/011986 patent/WO2004102652A1/en not_active Ceased
- 2004-04-16 JP JP2006532428A patent/JP4668916B2/ja not_active Expired - Fee Related
- 2004-04-16 CN CNA2004800183685A patent/CN1813343A/zh active Pending
- 2004-04-16 DE DE602004022534T patent/DE602004022534D1/de not_active Expired - Lifetime
- 2004-04-16 KR KR1020057021251A patent/KR20060009320A/ko not_active Withdrawn
- 2004-04-16 AT AT04760816T patent/ATE439681T1/de not_active IP Right Cessation
- 2004-04-28 TW TW093111915A patent/TW200505950A/zh unknown
- 2004-05-06 CN CNA200480012462XA patent/CN1784772A/zh active Pending
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2006
- 2006-06-30 US US11/428,084 patent/US7473652B2/en not_active Expired - Fee Related
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|---|---|
| US7473652B2 (en) | 2009-01-06 |
| DE602004022534D1 (de) | 2009-09-24 |
| EP1620885A1 (de) | 2006-02-01 |
| JP2007538381A (ja) | 2007-12-27 |
| EP1620885B1 (de) | 2009-08-12 |
| WO2004102652A1 (en) | 2004-11-25 |
| CN1784772A (zh) | 2006-06-07 |
| US20040222412A1 (en) | 2004-11-11 |
| US7098525B2 (en) | 2006-08-29 |
| US20060237717A1 (en) | 2006-10-26 |
| CN1813343A (zh) | 2006-08-02 |
| TW200505950A (en) | 2005-02-16 |
| JP4668916B2 (ja) | 2011-04-13 |
| KR20060009320A (ko) | 2006-01-31 |
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