ATE44116T1 - Verfahren zum herstellen eines integrierten schaltkreises aus mos-transistoren mit elektroden aus metallsilizid. - Google Patents

Verfahren zum herstellen eines integrierten schaltkreises aus mos-transistoren mit elektroden aus metallsilizid.

Info

Publication number
ATE44116T1
ATE44116T1 AT86400381T AT86400381T ATE44116T1 AT E44116 T1 ATE44116 T1 AT E44116T1 AT 86400381 T AT86400381 T AT 86400381T AT 86400381 T AT86400381 T AT 86400381T AT E44116 T1 ATE44116 T1 AT E44116T1
Authority
AT
Austria
Prior art keywords
resin
silicide
monocrystalline silicon
active zone
etching
Prior art date
Application number
AT86400381T
Other languages
English (en)
Inventor
Alain Roche
Joseph Borel
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Application granted granted Critical
Publication of ATE44116T1 publication Critical patent/ATE44116T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/022—Manufacture or treatment of FETs having insulated gates [IGFET] having lightly-doped source or drain extensions selectively formed at the sides of the gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H10D64/259—Source or drain electrodes being self-aligned with the gate electrode and having bottom surfaces higher than the interface between the channel and the gate dielectric
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
AT86400381T 1985-02-26 1986-02-21 Verfahren zum herstellen eines integrierten schaltkreises aus mos-transistoren mit elektroden aus metallsilizid. ATE44116T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8502768A FR2578100B1 (fr) 1985-02-26 1985-02-26 Circuit integre a transistors mos a electrodes en siliciure metallique et procede de fabrication
EP86400381A EP0194193B1 (de) 1985-02-26 1986-02-21 Verfahren zum Herstellen eines integrierten Schaltkreises aus MOS-Transistoren mit Elektroden aus Metallsilizid

Publications (1)

Publication Number Publication Date
ATE44116T1 true ATE44116T1 (de) 1989-06-15

Family

ID=9316637

Family Applications (1)

Application Number Title Priority Date Filing Date
AT86400381T ATE44116T1 (de) 1985-02-26 1986-02-21 Verfahren zum herstellen eines integrierten schaltkreises aus mos-transistoren mit elektroden aus metallsilizid.

Country Status (4)

Country Link
EP (1) EP0194193B1 (de)
AT (1) ATE44116T1 (de)
DE (1) DE3664021D1 (de)
FR (1) FR2578100B1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6200871B1 (en) * 1994-08-30 2001-03-13 Texas Instruments Incorporated High performance self-aligned silicide process for sub-half-micron semiconductor technologies

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4384301A (en) * 1979-11-07 1983-05-17 Texas Instruments Incorporated High performance submicron metal-oxide-semiconductor field effect transistor device structure
DE3230077A1 (de) * 1982-08-12 1984-02-16 Siemens AG, 1000 Berlin und 8000 München Integrierte bipolar- und mos-transistoren enthaltende halbleiterschaltung auf einem chip und verfahren zu ihrer herstellung
GB2139419A (en) * 1983-05-05 1984-11-07 Standard Telephones Cables Ltd Semiconductor devices

Also Published As

Publication number Publication date
FR2578100A1 (fr) 1986-08-29
DE3664021D1 (en) 1989-07-20
EP0194193A1 (de) 1986-09-10
EP0194193B1 (de) 1989-06-14
FR2578100B1 (fr) 1987-04-10

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee