ATE447768T1 - Bipolartransistoren mit grabenstruktur - Google Patents
Bipolartransistoren mit grabenstrukturInfo
- Publication number
- ATE447768T1 ATE447768T1 AT02758689T AT02758689T ATE447768T1 AT E447768 T1 ATE447768 T1 AT E447768T1 AT 02758689 T AT02758689 T AT 02758689T AT 02758689 T AT02758689 T AT 02758689T AT E447768 T1 ATE447768 T1 AT E447768T1
- Authority
- AT
- Austria
- Prior art keywords
- gate
- drift region
- bipolar transistors
- trench structure
- region
- Prior art date
Links
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/115—Resistive field plates, e.g. semi-insulating field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0119215.2A GB0119215D0 (en) | 2001-08-07 | 2001-08-07 | Trench bipolar transistor |
| PCT/IB2002/003289 WO2003015178A1 (en) | 2001-08-07 | 2002-08-05 | Trench bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE447768T1 true ATE447768T1 (de) | 2009-11-15 |
Family
ID=9919936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02758689T ATE447768T1 (de) | 2001-08-07 | 2002-08-05 | Bipolartransistoren mit grabenstruktur |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6777780B2 (de) |
| EP (1) | EP1417716B1 (de) |
| JP (1) | JP4053497B2 (de) |
| AT (1) | ATE447768T1 (de) |
| DE (1) | DE60234259D1 (de) |
| GB (1) | GB0119215D0 (de) |
| WO (1) | WO2003015178A1 (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3653087B2 (ja) * | 2003-07-04 | 2005-05-25 | 三菱重工業株式会社 | Ｄｃ／ｄｃコンバータ |
| EP1771885B1 (de) * | 2004-07-20 | 2011-12-28 | Nxp B.V. | Halbleitervorrichtung und verfahren zu deren hestellung |
| US20060049464A1 (en) | 2004-09-03 | 2006-03-09 | Rao G R Mohan | Semiconductor devices with graded dopant regions |
| US7821033B2 (en) * | 2007-02-15 | 2010-10-26 | Infineon Technologies Austria Ag | Semiconductor component comprising a drift zone and a drift control zone |
| US8739368B2 (en) * | 2007-11-16 | 2014-06-03 | H. Stetser Murphy, Jr. | Eyeglass holder |
| US9944217B2 (en) | 2013-02-11 | 2018-04-17 | Ferno-Washington, Inc. | Equipment mounting system |
| US20140347135A1 (en) | 2013-05-23 | 2014-11-27 | Nxp B.V. | Bipolar transistors with control of electric field |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2543739B1 (fr) | 1983-03-30 | 1986-04-18 | Radiotechnique Compelec | Procede de realisation d'un transistor bipolaire haute tension |
| US5539238A (en) | 1992-09-02 | 1996-07-23 | Texas Instruments Incorporated | Area efficient high voltage Mosfets with vertical resurf drift regions |
| US5326711A (en) | 1993-01-04 | 1994-07-05 | Texas Instruments Incorporated | High performance high voltage vertical transistor and method of fabrication |
| JPH0878668A (ja) | 1994-08-31 | 1996-03-22 | Toshiba Corp | 電力用半導体装置 |
| US5828101A (en) * | 1995-03-30 | 1998-10-27 | Kabushiki Kaisha Toshiba | Three-terminal semiconductor device and related semiconductor devices |
| US6097063A (en) * | 1996-01-22 | 2000-08-01 | Fuji Electric Co., Ltd. | Semiconductor device having a plurality of parallel drift regions |
| DE19848828C2 (de) | 1998-10-22 | 2001-09-13 | Infineon Technologies Ag | Halbleiterbauelement mit kleiner Durchlaßspannung und hoher Sperrfähigkeit |
| EP1965431A2 (de) * | 1999-06-22 | 2008-09-03 | Matsushita Electric Industrial Co., Ltd. | Heteroübergangsbipolartransistor und Verfahren zu dessen Herstellung |
| JP3971062B2 (ja) | 1999-07-29 | 2007-09-05 | 株式会社東芝 | 高耐圧半導体装置 |
| GB0003186D0 (en) | 2000-02-12 | 2000-04-05 | Koninkl Philips Electronics Nv | A semiconductor device |
| GB0003184D0 (en) | 2000-02-12 | 2000-04-05 | Koninkl Philips Electronics Nv | A semiconductor device and a method of fabricating material for a semiconductor device |
-
2001
- 2001-08-07 GB GBGB0119215.2A patent/GB0119215D0/en not_active Ceased
-
2002
- 2002-07-25 US US10/205,555 patent/US6777780B2/en not_active Expired - Fee Related
- 2002-08-05 EP EP02758689A patent/EP1417716B1/de not_active Expired - Lifetime
- 2002-08-05 AT AT02758689T patent/ATE447768T1/de not_active IP Right Cessation
- 2002-08-05 WO PCT/IB2002/003289 patent/WO2003015178A1/en not_active Ceased
- 2002-08-05 DE DE60234259T patent/DE60234259D1/de not_active Expired - Lifetime
- 2002-08-05 JP JP2003520003A patent/JP4053497B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003015178A1 (en) | 2003-02-20 |
| JP2004538647A (ja) | 2004-12-24 |
| EP1417716A1 (de) | 2004-05-12 |
| DE60234259D1 (de) | 2009-12-17 |
| JP4053497B2 (ja) | 2008-02-27 |
| GB0119215D0 (en) | 2001-09-26 |
| US6777780B2 (en) | 2004-08-17 |
| EP1417716B1 (de) | 2009-11-04 |
| US20030030488A1 (en) | 2003-02-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |