ATE463842T1 - Texturierte transparente leitfähige schicht und herstellungsverfahren dafür - Google Patents

Texturierte transparente leitfähige schicht und herstellungsverfahren dafür

Info

Publication number
ATE463842T1
ATE463842T1 AT07704549T AT07704549T ATE463842T1 AT E463842 T1 ATE463842 T1 AT E463842T1 AT 07704549 T AT07704549 T AT 07704549T AT 07704549 T AT07704549 T AT 07704549T AT E463842 T1 ATE463842 T1 AT E463842T1
Authority
AT
Austria
Prior art keywords
troughs
transparent conductive
conductive layer
production method
bosses
Prior art date
Application number
AT07704549T
Other languages
English (en)
Inventor
Julien Bailat
Christophe Ballif
Didier Domine
Original Assignee
Univ Neuchatel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=36545206&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE463842(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Univ Neuchatel filed Critical Univ Neuchatel
Application granted granted Critical
Publication of ATE463842T1 publication Critical patent/ATE463842T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/50—Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Laminated Bodies (AREA)
AT07704549T 2006-03-30 2007-02-13 Texturierte transparente leitfähige schicht und herstellungsverfahren dafür ATE463842T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06112013A EP1840966A1 (de) 2006-03-30 2006-03-30 Transparente, leitende und strukturierte Schicht sowie Verfahren zu ihrer Herstellung
PCT/EP2007/051375 WO2007113037A1 (fr) 2006-03-30 2007-02-13 Couche conductrice transparente et texturee et son procede de realisation

Publications (1)

Publication Number Publication Date
ATE463842T1 true ATE463842T1 (de) 2010-04-15

Family

ID=36545206

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07704549T ATE463842T1 (de) 2006-03-30 2007-02-13 Texturierte transparente leitfähige schicht und herstellungsverfahren dafür

Country Status (10)

Country Link
US (1) US8723020B2 (de)
EP (2) EP1840966A1 (de)
JP (1) JP2009531842A (de)
KR (1) KR101504553B1 (de)
CN (1) CN101410980B (de)
AT (1) ATE463842T1 (de)
AU (1) AU2007233965B2 (de)
DE (1) DE602007005787D1 (de)
ES (1) ES2343378T3 (de)
WO (1) WO2007113037A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5243697B2 (ja) * 2006-04-19 2013-07-24 株式会社カネカ 光電変換装置用透明導電膜とその製造方法
EP2190024A1 (de) * 2008-11-19 2010-05-26 Université de Neuchâtel Fotoelektrische Vorrichtung mit Multi-Schnittstellen und ihr Umsetzungsverfahren
KR20120003859A (ko) * 2009-03-17 2012-01-11 아이엠이씨 플라즈마 텍스처링 방법
AU2010348488B2 (en) * 2010-03-15 2013-06-13 Sharp Kabushiki Kaisha Substrate for photoelectric conversion device, photoelectric conversion device using the substrate, and method for producing the substrate and device
EP2413373A1 (de) * 2010-07-29 2012-02-01 Ecole Polytechnique Fédérale de Lausanne (EPFL) Photoelektrische Vorrichtung mit mehreren Verbindungselementen und Herstellungsverfahren dafür
US9276142B2 (en) 2010-12-17 2016-03-01 First Solar, Inc. Methods for forming a transparent oxide layer for a photovoltaic device
US8476105B2 (en) 2010-12-22 2013-07-02 General Electric Company Method of making a transparent conductive oxide layer and a photovoltaic device
EP2518789B1 (de) * 2011-04-18 2016-04-13 Corning Precision Materials Co., Ltd. Herstellungsverfahren eines Lichtextraktionssubstrats für eine Elektrolumineszenzvorrichtung
KR101225739B1 (ko) * 2011-04-22 2013-01-23 삼성코닝정밀소재 주식회사 광전지용 산화아연계 투명 도전막 및 그 제조방법
KR101202746B1 (ko) 2011-04-22 2012-11-19 삼성코닝정밀소재 주식회사 광전지 모듈용 기판 제조방법
JP2013041996A (ja) * 2011-08-16 2013-02-28 Kaneka Corp 薄膜光電変換装置
KR101324725B1 (ko) * 2012-02-21 2013-11-05 삼성코닝정밀소재 주식회사 투명 도전막 제조방법
KR101421026B1 (ko) * 2012-06-12 2014-07-22 코닝정밀소재 주식회사 유기발광소자용 광추출층 기판 및 그 제조방법
RU2505888C1 (ru) * 2012-07-31 2014-01-27 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Способ получения слоя прозрачного проводящего оксида на стеклянной подложке
CN103236451A (zh) * 2013-04-10 2013-08-07 中国科学院微电子研究所 结合氧化锌纳米线的硅超小绒面太阳电池及其制备方法
CN104201235B (zh) * 2014-07-16 2017-04-05 电子科技大学 一种薄膜太阳能电池azo薄膜的等离子体织构方法
CN104465814B (zh) * 2014-12-15 2017-04-05 中国科学院微电子研究所 一种结合氧化锌纳米结构超小绒面太阳电池及其制备方法
CN110137233B (zh) 2019-05-28 2022-01-14 合肥京东方显示技术有限公司 阵列基板及其制备方法、显示装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5137155B2 (de) * 1973-03-12 1976-10-14
US4532537A (en) * 1982-09-27 1985-07-30 Rca Corporation Photodetector with enhanced light absorption
JPH0682625B2 (ja) 1985-06-04 1994-10-19 シーメンス ソーラー インダストリーズ，エル．ピー． 酸化亜鉛膜の蒸着方法
JPS61288473A (ja) * 1985-06-17 1986-12-18 Sanyo Electric Co Ltd 光起電力装置
JPS62297462A (ja) 1986-06-18 1987-12-24 Toyota Motor Corp 高速真空成膜方法
JPH04133360A (ja) * 1990-09-25 1992-05-07 Sanyo Electric Co Ltd 光起電力装置
JPH06132533A (ja) * 1992-10-19 1994-05-13 Toshiba Corp Ｔｆｔアレイ基板の製造方法
JP3651932B2 (ja) * 1994-08-24 2005-05-25 キヤノン株式会社 光起電力素子用裏面反射層及びその形成方法並びに光起電力素子及びその製造方法
DE19713215A1 (de) 1997-03-27 1998-10-08 Forschungszentrum Juelich Gmbh Solarzelle mit texturierter TCO-Schicht sowie Verfahren zur Herstellung einer solchen TCO-Schicht für eine solche Solarzelle
NL1013900C2 (nl) * 1999-12-21 2001-06-25 Akzo Nobel Nv Werkwijze voor de vervaardiging van een zonnecelfolie met in serie geschakelde zonnecellen.
JP2001352086A (ja) * 2000-06-06 2001-12-21 Mitsubishi Heavy Ind Ltd 透明電極膜、その製造方法、および該透明電極膜を用いた太陽電池及びその製造方法
US6787692B2 (en) * 2000-10-31 2004-09-07 National Institute Of Advanced Industrial Science & Technology Solar cell substrate, thin-film solar cell, and multi-junction thin-film solar cell
US6750394B2 (en) * 2001-01-12 2004-06-15 Sharp Kabushiki Kaisha Thin-film solar cell and its manufacturing method
US20030044539A1 (en) * 2001-02-06 2003-03-06 Oswald Robert S. Process for producing photovoltaic devices
EP1289025A1 (de) * 2001-08-30 2003-03-05 Universite De Neuchatel Abscheidungsverfahren von einer Oxydschicht auf einem Substrat und dieses verwendende photovoltaische Zelle
JP4389585B2 (ja) * 2001-10-19 2009-12-24 旭硝子株式会社 透明導電性酸化物膜付き基体および光電変換素子
US20050172997A1 (en) * 2004-02-06 2005-08-11 Johannes Meier Back contact and back reflector for thin film silicon solar cells
JP2005347490A (ja) * 2004-06-02 2005-12-15 Asahi Glass Co Ltd 透明導電性酸化物膜付き基体およびその製造方法ならびに光電変換素子

Also Published As

Publication number Publication date
AU2007233965A1 (en) 2007-10-11
AU2007233965B2 (en) 2012-03-29
EP1840966A1 (de) 2007-10-03
JP2009531842A (ja) 2009-09-03
EP2005473A1 (de) 2008-12-24
US20100126575A1 (en) 2010-05-27
WO2007113037A1 (fr) 2007-10-11
KR20090015898A (ko) 2009-02-12
EP2005473B1 (de) 2010-04-07
DE602007005787D1 (de) 2010-05-20
CN101410980A (zh) 2009-04-15
KR101504553B1 (ko) 2015-03-23
CN101410980B (zh) 2012-11-07
US8723020B2 (en) 2014-05-13
ES2343378T3 (es) 2010-07-29

Similar Documents

Publication Publication Date Title
ATE463842T1 (de) Texturierte transparente leitfähige schicht und herstellungsverfahren dafür
TWD136583S1 (zh) Ｌｅｄ晶片
WO2012161462A3 (ko) 전도성 기판 및 이를 포함하는 터치 패널
TWD139501S1 (zh) Ｌｅｄ晶片
EP2446468A4 (de) System zur direkten messung der tiefe eines geätzten merkmals mit hohem aspektverhältnis auf einem wafer
DE602006014988D1 (de) Superhydrophiles oder superhydrophobes produkt, herstellungsverfahren dafür und verwendung davon
TW200621076A (en) Organic electroluminescence device and method of production of same
WO2009034697A1 (ja) シリコン構造体およびその製造方法並びにセンサチップ
EP2882267A3 (de) Verdrahtungssubstrat, lichtemittierende Vorrichtung und Verfahren zur Herstellung eines Verdrahtungssubstrats
EP1592048A4 (de) Halbleitersubstrat, feldeffekttransistor und deren herstellungsverfahren
WO2011122882A3 (ko) 반도체 템플릿 기판, 반도체 템플릿 기판을 이용하는 발광 소자 및 이의 제조 방법
GB0517195D0 (en) Molecular electronic device structures and fabrication methods
EP2239743A4 (de) Verfahren zur herstellung von leitendem material, durch das verfahren erhaltenes leitendes material, das leitende material enthaltende elektronische vorrichtung, lichtemittierende vorrichtung und verfahren zur herstellung der lichtemittierenden vorrichtung
MY201736A (en) Glass substrate for a magnetic disk, magnetic disk and method of manufacturing a magentic disk
WO2014137192A3 (ko) 금속 세선을 포함하는 투명 기판 및 그 제조 방법
WO2011008055A3 (ko) 전도체 및 이의 제조방법
TW200740275A (en) Light emitting device and electronic device
JP2012009420A5 (de)
ATE523896T1 (de) Halbleitervorrichtung und herstellungsverfahren
EP2581357A4 (de) Aluminiumnitridsubstrat für platinen und herstellungsverfahren dafür
TW200511609A (en) Light-emitting device
ATE516483T1 (de) Akustische oberflächenwellen-sensor mit einstellbarer vorspannung
TW200711179A (en) Semiconductor light-emitting device and method of manufacturing the same
WO2008011585A3 (en) Package having a plurality of mounting orientations
DE60304411D1 (de) Perfluoroelastomer-Gegenstände mit verbesserten Oberflächeneigenschaften

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties