ATE488625T1 - Halbleiter-nanokristallheterostrukturen - Google Patents

Halbleiter-nanokristallheterostrukturen

Info

Publication number
ATE488625T1
ATE488625T1 AT03810871T AT03810871T ATE488625T1 AT E488625 T1 ATE488625 T1 AT E488625T1 AT 03810871 T AT03810871 T AT 03810871T AT 03810871 T AT03810871 T AT 03810871T AT E488625 T1 ATE488625 T1 AT E488625T1
Authority
AT
Austria
Prior art keywords
semiconductor nanocrystal
nanocrystal heterostructures
overcoating
core
carrier
Prior art date
Application number
AT03810871T
Other languages
English (en)
Inventor
Sungjee Kim
Moungi Bawendi
Original Assignee
Massachusetts Inst Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Inst Technology filed Critical Massachusetts Inst Technology
Application granted granted Critical
Publication of ATE488625T1 publication Critical patent/ATE488625T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/58—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving labelled substances
    • G01N33/588—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving labelled substances with semiconductor nanocrystal label, e.g. quantum dots
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/826—Heterojunctions comprising only Group II-VI materials heterojunctions, e.g. CdTe/HgTe heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2913—Materials being Group IIB-VIA materials
    • H10P14/2916—Selenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2913—Materials being Group IIB-VIA materials
    • H10P14/2917—Tellurides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3431—Selenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3432—Tellurides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/775—Nanosized powder or flake, e.g. nanosized catalyst
    • Y10S977/777—Metallic powder or flake
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/811—Of specified metal oxide composition, e.g. conducting or semiconducting compositions such as ITO, ZnOx
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y10T428/12021—All metal or with adjacent metals having metal particles having composition or density gradient or differential porosity
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12986—Adjacent functionally defined components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber
    • Y10T428/2933—Coated or with bond, impregnation or core
    • Y10T428/294—Coated or with bond, impregnation or core including metal or compound thereof [excluding glass, ceramic and asbestos]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31—Surface property or characteristic of web, sheet or block
    • Y10T428/315—Surface modified glass [e.g., tempered, strengthened, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Metallurgy (AREA)
  • General Health & Medical Sciences (AREA)
  • Hematology (AREA)
  • Immunology (AREA)
  • Urology & Nephrology (AREA)
  • Biomedical Technology (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Biophysics (AREA)
  • Biochemistry (AREA)
  • Cell Biology (AREA)
  • Medicinal Chemistry (AREA)
  • Pathology (AREA)
  • Inorganic Chemistry (AREA)
  • Biotechnology (AREA)
  • Composite Materials (AREA)
  • Microbiology (AREA)
  • Food Science & Technology (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Luminescent Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Memories (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Plural Heterocyclic Compounds (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
AT03810871T 2002-08-13 2003-08-12 Halbleiter-nanokristallheterostrukturen ATE488625T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40272602P 2002-08-13 2002-08-13
PCT/US2003/025174 WO2004053929A2 (en) 2002-08-13 2003-08-12 Semiconductor nanocrystal heterostructures

Publications (1)

Publication Number Publication Date
ATE488625T1 true ATE488625T1 (de) 2010-12-15

Family

ID=32507577

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03810871T ATE488625T1 (de) 2002-08-13 2003-08-12 Halbleiter-nanokristallheterostrukturen

Country Status (8)

Country Link
US (4) US7390568B2 (de)
EP (2) EP2336409B1 (de)
JP (2) JP4931348B2 (de)
AT (1) ATE488625T1 (de)
AU (1) AU2003302316A1 (de)
CA (1) CA2495309C (de)
DE (1) DE60335001D1 (de)
WO (1) WO2004053929A2 (de)

Families Citing this family (128)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2336409B1 (de) * 2002-08-13 2023-05-10 Massachusetts Institute of Technology Beschichteter Nanokristall und Verfahren zur Herstellung eines beschichteten Nanokristalles
WO2004066361A2 (en) * 2003-01-22 2004-08-05 The Board Of Trustees Of The University Of Arkansas Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same
US7229497B2 (en) * 2003-08-26 2007-06-12 Massachusetts Institute Of Technology Method of preparing nanocrystals
US7303628B2 (en) * 2004-03-23 2007-12-04 The Regents Of The University Of California Nanocrystals with linear and branched topology
US7326908B2 (en) 2004-04-19 2008-02-05 Edward Sargent Optically-regulated optical emission using colloidal quantum dot nanocrystals
US7742322B2 (en) * 2005-01-07 2010-06-22 Invisage Technologies, Inc. Electronic and optoelectronic devices with quantum dot films
US7773404B2 (en) 2005-01-07 2010-08-10 Invisage Technologies, Inc. Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
US7746681B2 (en) 2005-01-07 2010-06-29 Invisage Technologies, Inc. Methods of making quantum dot films
GB0409877D0 (en) 2004-04-30 2004-06-09 Univ Manchester Preparation of nanoparticle materials
US20070045777A1 (en) * 2004-07-08 2007-03-01 Jennifer Gillies Micronized semiconductor nanocrystal complexes and methods of making and using same
US7316967B2 (en) * 2004-09-24 2008-01-08 Massachusetts Institute Of Technology Flow method and reactor for manufacturing noncrystals
US10225906B2 (en) * 2004-10-22 2019-03-05 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
ATE556126T1 (de) * 2004-10-29 2012-05-15 Life Technologies Corp Funktionalisierte fluoreszierende nanokristalle und verfahren zu deren herstellung und verwendung
EP1666562B1 (de) * 2004-11-11 2018-03-07 Samsung Electronics Co., Ltd. Zusammengewachsene Nanokristalle und Verfahren zu ihrer Herstellung
US9637682B2 (en) 2004-11-11 2017-05-02 Samsung Electronics Co., Ltd. Interfused nanocrystals and method of preparing the same
JP4565153B2 (ja) * 2004-11-19 2010-10-20 独立行政法人産業技術総合研究所 ナノ粒子の低温合成法
JP4538646B2 (ja) * 2004-11-22 2010-09-08 独立行政法人産業技術総合研究所 高効率蛍光体の製造方法
US8891575B2 (en) * 2004-11-30 2014-11-18 Massachusetts Institute Of Technology Optical feedback structures and methods of making
CA2519608A1 (en) 2005-01-07 2006-07-07 Edward Sargent Quantum dot-polymer nanocomposite photodetectors and photovoltaics
US8134175B2 (en) * 2005-01-11 2012-03-13 Massachusetts Institute Of Technology Nanocrystals including III-V semiconductors
DE112006001067T5 (de) * 2005-04-25 2008-03-13 Board Of Trustees Of The University Of Arkansas Dotierte Halbleiter-Nanokristalle und Verfahren zu deren Herstellung
WO2007103310A2 (en) 2006-03-07 2007-09-13 Qd Vision, Inc. An article including semiconductor nanocrystals
US8718437B2 (en) 2006-03-07 2014-05-06 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
US8845927B2 (en) * 2006-06-02 2014-09-30 Qd Vision, Inc. Functionalized nanoparticles and method
US9297092B2 (en) 2005-06-05 2016-03-29 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
GB2472541B (en) * 2005-08-12 2011-03-23 Nanoco Technologies Ltd Nanoparticles
KR101159853B1 (ko) * 2005-09-12 2012-06-25 삼성전기주식회사 다층구조 나노결정의 제조방법 및 그에 의해 수득된 나노결정
GB0522027D0 (en) * 2005-10-28 2005-12-07 Nanoco Technologies Ltd Controlled preparation of nanoparticle materials
US7414294B2 (en) 2005-12-16 2008-08-19 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix
US7394094B2 (en) * 2005-12-29 2008-07-01 Massachusetts Institute Of Technology Semiconductor nanocrystal heterostructures
TWI273719B (en) * 2005-12-30 2007-02-11 Ind Tech Res Inst Nanocrystal and photovoltaics applying the same
JPWO2007086267A1 (ja) * 2006-01-27 2009-06-18 コニカミノルタエムジー株式会社 コア・シェル構造を有するナノ半導体粒子およびその製造方法
WO2007086188A1 (ja) * 2006-01-30 2007-08-02 Konica Minolta Medical & Graphic, Inc. 三層型半導体ナノ粒子および三層型半導体ナノロッド
WO2007095061A2 (en) * 2006-02-09 2007-08-23 Qd Vision, Inc. Device including semiconductor nanocrystals and a layer including a doped organic material and methods
US8835941B2 (en) * 2006-02-09 2014-09-16 Qd Vision, Inc. Displays including semiconductor nanocrystals and methods of making same
US9874674B2 (en) 2006-03-07 2018-01-23 Samsung Electronics Co., Ltd. Compositions, optical component, system including an optical component, devices, and other products
US8849087B2 (en) 2006-03-07 2014-09-30 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
WO2007112088A2 (en) * 2006-03-24 2007-10-04 Qd Vision, Inc. Hyperspectral imaging device
US20080038558A1 (en) * 2006-04-05 2008-02-14 Evident Technologies, Inc. I-iii-vi semiconductor nanocrystals, i-iii-vi water stable semiconductor nanocrystals, and methods of making same
WO2007117698A2 (en) 2006-04-07 2007-10-18 Qd Vision, Inc. Composition including material, methods of depositing material, articles including same and systems for depositing material
US8941299B2 (en) * 2006-05-21 2015-01-27 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US9212056B2 (en) 2006-06-02 2015-12-15 Qd Vision, Inc. Nanoparticle including multi-functional ligand and method
WO2007143227A2 (en) * 2006-06-10 2007-12-13 Qd Vision, Inc. Materials,thin films,optical filters, and devices including same
WO2008105792A2 (en) * 2006-06-24 2008-09-04 Qd Vision, Inc. Methods for depositing nanomaterial, methods for fabricating a device, methods for fabricating an array of devices and compositions
WO2008111947A1 (en) 2006-06-24 2008-09-18 Qd Vision, Inc. Methods and articles including nanomaterial
WO2008108798A2 (en) 2006-06-24 2008-09-12 Qd Vision, Inc. Methods for depositing nanomaterial, methods for fabricating a device, and methods for fabricating an array of devices
US8643058B2 (en) 2006-07-31 2014-02-04 Massachusetts Institute Of Technology Electro-optical device including nanocrystals
DE102006043119A1 (de) * 2006-09-08 2008-03-27 Bundesdruckerei Gmbh Sicherheits- und/oder Wertdokument mit einem Typ II Halbleiterkontaktsystem
WO2008033388A2 (en) * 2006-09-12 2008-03-20 Qd Vision, Inc. A composite including nanoparticles, methods, and products including a composite
WO2008085210A2 (en) * 2006-09-12 2008-07-17 Qd Vision, Inc. Electroluminescent display useful for displaying a predetermined pattern
WO2008032618A1 (en) * 2006-09-15 2008-03-20 Konica Minolta Medical & Graphic, Inc. Semiconductor nanoparticle and process for producing the same
WO2008063658A2 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063652A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
WO2008063653A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008133660A2 (en) * 2006-11-21 2008-11-06 Qd Vision, Inc. Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts
US8836212B2 (en) 2007-01-11 2014-09-16 Qd Vision, Inc. Light emissive printed article printed with quantum dot ink
US8563348B2 (en) * 2007-04-18 2013-10-22 Nanoco Technologies Ltd. Fabrication of electrically active films based on multiple layers
US20080264479A1 (en) 2007-04-25 2008-10-30 Nanoco Technologies Limited Hybrid Photovoltaic Cells and Related Methods
WO2008150352A2 (en) * 2007-05-17 2008-12-11 Los Alamos National Security, Llc Single exciton nanocrystal laser
JP5773646B2 (ja) 2007-06-25 2015-09-02 キユーデイー・ビジヨン・インコーポレーテツド ナノ材料を被着させることを含む組成物および方法
WO2009002551A1 (en) * 2007-06-26 2008-12-31 Qd Vision, Inc. Photovoltaic devices including quantum dot down-conversion materials useful for solar cells and materials including quantum dots
JP2011508793A (ja) 2007-06-26 2011-03-17 マサチューセッツ インスティテュート オブ テクノロジー 半導体ナノクリスタルの制御された修飾
US8947516B2 (en) * 2007-09-26 2015-02-03 Massachusetts Institute Of Technology High-resolution 3D imaging of single semiconductor nanocrystals
US8784701B2 (en) * 2007-11-30 2014-07-22 Nanoco Technologies Ltd. Preparation of nanoparticle material
WO2009094160A2 (en) 2008-01-23 2009-07-30 Massachusetts Institute Of Technology Semiconductor nanocrystals
CA2716552C (en) * 2008-02-25 2016-02-02 Nanoco Technologies Limited Semiconductor nanoparticle capping agents
WO2009123763A2 (en) 2008-04-03 2009-10-08 Qd Vision, Inc. Light-emitting device including quantum dots
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
US8865477B2 (en) 2008-04-22 2014-10-21 Drexel University Water soluble nanocrystalline quantum dots capable of near infrared emissions
WO2009151515A1 (en) 2008-05-06 2009-12-17 Qd Vision, Inc. Solid state lighting devices including quantum confined semiconductor nanoparticles
WO2009137053A1 (en) 2008-05-06 2009-11-12 Qd Vision, Inc. Optical components, systems including an optical component, and devices
US9207385B2 (en) 2008-05-06 2015-12-08 Qd Vision, Inc. Lighting systems and devices including same
US8507040B2 (en) 2008-05-08 2013-08-13 Air Products And Chemicals, Inc. Binary and ternary metal chalcogenide materials and method of making and using same
US8765223B2 (en) * 2008-05-08 2014-07-01 Air Products And Chemicals, Inc. Binary and ternary metal chalcogenide materials and method of making and using same
US20110291049A1 (en) * 2008-06-10 2011-12-01 Board Of Trustees Of The University Of Arkansas Indium arsenide nanocrystals and methods of making the same
GB0813273D0 (en) * 2008-07-19 2008-08-27 Nanoco Technologies Ltd Method for producing aqueous compatible nanoparticles
GB0814458D0 (en) * 2008-08-07 2008-09-10 Nanoco Technologies Ltd Surface functionalised nanoparticles
CN102144279A (zh) * 2008-09-03 2011-08-03 爱默蕾大学 量子点、制造量子点的方法以及使用量子点的方法
US20110226995A1 (en) * 2008-10-03 2011-09-22 Life Technologies Corporation Compositions and methods for functionalizing or crosslinking ligands on nanoparticle surfaces
GB0820101D0 (en) * 2008-11-04 2008-12-10 Nanoco Technologies Ltd Surface functionalised nanoparticles
GB0821122D0 (en) * 2008-11-19 2008-12-24 Nanoco Technologies Ltd Semiconductor nanoparticle - based light emitting devices and associated materials and methods
GB0901857D0 (en) * 2009-02-05 2009-03-11 Nanoco Technologies Ltd Encapsulated nanoparticles
US10173454B2 (en) * 2009-02-17 2019-01-08 Bundesdruckerei Gmbh Security and/or value document having a type II semiconductor contact system
EP2424814A4 (de) 2009-04-28 2016-06-01 Qd Vision Inc Optische materialien, optische komponenten und verfahren
JP2013502047A (ja) 2009-08-14 2013-01-17 キユーデイー・ビジヨン・インコーポレーテツド 照明装置、照明装置用光学部品および方法
GB0916700D0 (en) * 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
CA2775324C (en) 2009-09-23 2018-05-15 Crystalplex Corporation Passivated nanoparticles
GB0916699D0 (en) * 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
WO2011047385A1 (en) 2009-10-17 2011-04-21 Qd Vision, Inc. An optical, component, products including same, and methods for making same
CA2781043A1 (en) 2009-11-16 2011-05-19 Emory University Lattice-mismatched core-shell quantum dots
US10202546B2 (en) 2010-03-23 2019-02-12 Massachusetts Institute Of Technology Ligands for semiconductor nanocrystals
US9759727B2 (en) * 2010-03-23 2017-09-12 Massachusetts Institute Of Technology Ligands for semiconductor nanocrystals
EP2553048B1 (de) * 2010-03-29 2017-08-16 Koninklijke Philips N.V. Leuchtender wandler
GB201005601D0 (en) 2010-04-01 2010-05-19 Nanoco Technologies Ltd Ecapsulated nanoparticles
CN102985359A (zh) * 2010-04-23 2013-03-20 普度研究基金会 基于超薄纳米线和基于纳米级异质结构的热电转换结构及其制备方法
US10174243B2 (en) 2010-08-24 2019-01-08 Massachusetts Institute Of Technology Highly luminescent semiconductor nanocrystals
US8399939B2 (en) 2010-12-03 2013-03-19 Massachusetts Institute Of Technology Color selective photodetector and methods of making
CN102104078B (zh) * 2010-12-21 2012-03-28 中国科学院理化技术研究所 ZnO/ZnS核壳结构一维纳米材料以及单晶ZnS纳米管的制备方法
CN102104079B (zh) * 2010-12-21 2012-05-23 中国科学院理化技术研究所 一维ZnO/ZnS核壳结构纳米阵列以及单晶ZnS纳米管阵列的制备方法
US9403154B2 (en) * 2011-03-22 2016-08-02 Monash University Catalysts and methods of use
US20140339497A1 (en) * 2011-06-20 2014-11-20 Crystalplex Corporation Stabilized nanocrystals
CN102263036A (zh) * 2011-07-01 2011-11-30 新疆大学 一种制备CdS/ZnS纳米线异质结的方法
US20130240026A1 (en) * 2011-09-02 2013-09-19 The California Institute Of Technology Photovoltaic semiconductive materials
FR2981790A1 (fr) * 2011-10-19 2013-04-26 Solarwell Procede de croissance en epaisseur de feuillets colloidaux et materiaux composes de feuillets
FR2981791A1 (fr) * 2011-10-19 2013-04-26 Solarwell Procede de croissance en epaisseur couche par couche de feuillets colloidaux et materiaux composes de feuillets
WO2013078247A1 (en) 2011-11-22 2013-05-30 Qd Vision, Inc. Methods of coating semiconductor nanocrystals, semiconductor nanocrystals, and products including same
US10008631B2 (en) * 2011-11-22 2018-06-26 Samsung Electronics Co., Ltd. Coated semiconductor nanocrystals and products including same
US8937373B2 (en) * 2012-01-11 2015-01-20 Massachusetts Institute Of Technology Highly luminescent II-V semiconductor nanocrystals
CN104205368B (zh) * 2012-02-05 2018-08-07 三星电子株式会社 半导体纳米晶体、其制备方法、组合物、以及产品
CN102800747A (zh) * 2012-07-11 2012-11-28 上海大学 一种ZnS包覆的ZnO纳米阵列核壳结构的制备方法
US20140060639A1 (en) 2012-08-31 2014-03-06 OneSun, LLC Copper oxide core/shell nanocrystals for use in photovoltaic cells
WO2014039472A1 (en) * 2012-09-04 2014-03-13 Massachusetts Institute Of Technology Solid-state cloaking for electrical charge carrier mobility control
US8937294B2 (en) 2013-03-15 2015-01-20 Rohm And Haas Electronic Materials Llc Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
US9617472B2 (en) 2013-03-15 2017-04-11 Samsung Electronics Co., Ltd. Semiconductor nanocrystals, a method for coating semiconductor nanocrystals, and products including same
US9123638B2 (en) 2013-03-15 2015-09-01 Rohm And Haas Electronic Materials, Llc Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
US20150243837A1 (en) * 2013-03-15 2015-08-27 Moonsub Shim Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
EP3148712B1 (de) 2014-05-29 2021-08-18 Crystalplex Corporation Dispergiersystem für quantenpunkte
KR102480086B1 (ko) * 2016-01-11 2022-12-23 삼성디스플레이 주식회사 디스플레이 장치 및 그 제조방법
EP3458544A4 (de) 2016-05-19 2020-04-08 Crystalplex Corporation Cadmiumfreie quantenpunkte, abstimmbare quantenpunkte, quantenpunkthaltiges polymer, artikel, filme und 3d-struktur damit und verfahren zur herstellung und verwendung davon
US11319487B2 (en) 2017-05-11 2022-05-03 Samsung Electronics Co., Ltd. Semiconductor nanocrystal particles and devices including the same
KR102556011B1 (ko) * 2018-01-23 2023-07-14 삼성디스플레이 주식회사 반도체 나노 결정과, 이를 포함하는 표시 장치 및 유기발광 표시 장치
CN109979643B (zh) * 2018-02-28 2020-05-08 华南师范大学 ZnO/ZnSe/CdSe/MoS2核壳结构薄膜电极的制备方法和应用
EP3536762B1 (de) 2018-03-09 2021-05-05 Samsung Electronics Co., Ltd. Quantenpunkte und vorrichtungen damit
US10456776B1 (en) * 2019-02-21 2019-10-29 King Saud University Method of fabricating a photocatalyst for water splitting
US11702593B2 (en) * 2020-02-28 2023-07-18 Samsung Electronics Co., Ltd. Quantum dots, and electronic devices and electronic equipments including same
US11387423B2 (en) 2020-03-25 2022-07-12 Henan University Non-blinking quantum dot, preparation method thereof, and quantum dot-based light-emitting diode
US20230413589A1 (en) * 2020-10-14 2023-12-21 Sharp Kabushiki Kaisha Light-emitting element
KR102914249B1 (ko) 2021-12-14 2026-01-16 삼성전자주식회사 반도체 장치

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4882609A (en) * 1984-11-19 1989-11-21 Max-Planck Gesellschaft Zur Forderung Der Wissenschafter E.V. Semiconductor devices with at least one monoatomic layer of doping atoms
JPS63178194A (ja) * 1987-01-19 1988-07-22 Tosoh Corp マイクロカプセル化アルカリ土類硫化物蛍光体
ATE131289T1 (de) * 1989-09-04 1995-12-15 British Telecomm Quantumfilm-strukturen.
US5021360A (en) * 1989-09-25 1991-06-04 Gte Laboratories Incorporated Method of farbicating highly lattice mismatched quantum well structures
US5081511A (en) * 1990-09-06 1992-01-14 Motorola, Inc. Heterojunction field effect transistor with monolayers in channel region
WO1993010564A1 (en) * 1991-11-22 1993-05-27 The Regents Of The University Of California Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers
US5505928A (en) * 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
US5262357A (en) * 1991-11-22 1993-11-16 The Regents Of The University Of California Low temperature thin films formed from nanocrystal precursors
JPH0817231B2 (ja) * 1992-01-29 1996-02-21 東京工業大学長 組織ドープ構造半導体装置
US5515393A (en) * 1992-01-29 1996-05-07 Sony Corporation Semiconductor laser with ZnMgSSe cladding layers
DE69328929T2 (de) * 1992-05-22 2000-11-02 Minnesota Mining And Mfg. Co., Saint Paul Ii-vi laserdioden mit durch atomlagen- und migrationsverstaerkte epitaxie aufgewachsenen quantum wells
US5293050A (en) * 1993-03-25 1994-03-08 International Business Machines Corporation Semiconductor quantum dot light emitting/detecting devices
US6048616A (en) * 1993-04-21 2000-04-11 Philips Electronics N.A. Corp. Encapsulated quantum sized doped semiconductor particles and method of manufacturing same
JPH0750448A (ja) 1993-08-04 1995-02-21 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
US5492080A (en) * 1993-12-27 1996-02-20 Matsushita Electric Industrial Co., Ltd. Crystal-growth method and semiconductor device production method using the crystal-growth method
US5422489A (en) * 1994-01-24 1995-06-06 Bhargava; Rameshwar N. Light emitting device
US5881886A (en) 1994-03-18 1999-03-16 Brown University Research Foundation Optically-based methods and apparatus for sorting garments and other textiles
US5448582A (en) * 1994-03-18 1995-09-05 Brown University Research Foundation Optical sources having a strongly scattering gain medium providing laser-like action
US5434878A (en) * 1994-03-18 1995-07-18 Brown University Research Foundation Optical gain medium having doped nanocrystals of semiconductors and also optical scatterers
GB2318666B (en) 1994-04-25 1998-07-15 Univ Hertfordshire Coded items for labelling objects
US5537000A (en) * 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices
US5449260A (en) * 1994-06-10 1995-09-12 Whittle; Weldon M. Tamper-evident bolt
US5677545A (en) * 1994-09-12 1997-10-14 Motorola Organic light emitting diodes with molecular alignment and method of fabrication
WO1996014206A1 (en) * 1994-11-08 1996-05-17 Spectra Science Corporation Semiconductor nanocrystal display materials and display apparatus employing same
US5541948A (en) * 1994-11-28 1996-07-30 The Regents Of The University Of California Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers
US5985353A (en) * 1994-12-01 1999-11-16 University Of Massachusetts Lowell Biomolecular synthesis of quantum dot composites
US5585640A (en) * 1995-01-11 1996-12-17 Huston; Alan L. Glass matrix doped with activated luminescent nanocrystalline particles
US5747180A (en) * 1995-05-19 1998-05-05 University Of Notre Dame Du Lac Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays
GB9518910D0 (en) * 1995-09-15 1995-11-15 Imperial College Process
US6323989B1 (en) * 1996-07-19 2001-11-27 E Ink Corporation Electrophoretic displays using nanoparticles
WO1998004740A1 (en) 1996-07-29 1998-02-05 Nanosphere Llc Nanoparticles having oligonucleotides attached thereto and uses therefor
US5908608A (en) 1996-11-08 1999-06-01 Spectra Science Corporation Synthesis of metal chalcogenide quantum
US5939021A (en) 1997-01-23 1999-08-17 Hansen; W. Peter Homogeneous binding assay
AU6271798A (en) 1997-02-18 1998-09-08 Spectra Science Corporation Field activated security thread including polymer dispersed liquid crystal
AUPP004497A0 (en) * 1997-10-28 1997-11-20 University Of Melbourne, The Stabilized particles
US6322901B1 (en) * 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6607829B1 (en) 1997-11-13 2003-08-19 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US5985173A (en) * 1997-11-18 1999-11-16 Gray; Henry F. Phosphors having a semiconductor host surrounded by a shell
US5990479A (en) * 1997-11-25 1999-11-23 Regents Of The University Of California Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes
US6139585A (en) * 1998-03-11 2000-10-31 Depuy Orthopaedics, Inc. Bioactive ceramic coating and method
US6251303B1 (en) * 1998-09-18 2001-06-26 Massachusetts Institute Of Technology Water-soluble fluorescent nanocrystals
JP2000104058A (ja) * 1998-09-28 2000-04-11 Sony Corp 発光体の製造方法
US6332901B1 (en) * 1998-10-12 2001-12-25 Toyota Jidosha Kabushiki Kaisha Carbon monoxide reducing device for reducing carbon monoxide in a reformate gas
WO2000028598A1 (en) * 1998-11-10 2000-05-18 Biocrystal Limited Methods for identification and verification
US6114038A (en) * 1998-11-10 2000-09-05 Biocrystal Ltd. Functionalized nanocrystals and their use in detection systems
US6592842B2 (en) * 1999-10-01 2003-07-15 Battelle Memorial Institute Nanocrystalline heterojunction materials
EP1264375A2 (de) * 2000-03-14 2002-12-11 Massachusetts Institute Of Technology Optischer verstärker und laser
JP2002020740A (ja) * 2000-05-01 2002-01-23 Mitsubishi Chemicals Corp 超分岐構造配位子を有する半導体結晶超微粒子
IL138471A0 (en) * 2000-09-14 2001-10-31 Yissum Res Dev Co Novel semiconductor materials and their uses
ATE491230T1 (de) 2000-10-04 2010-12-15 Univ Arkansas Synthese von kolloidalen metall chalcogenide nanokristallen
US6576291B2 (en) * 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
US6996147B2 (en) * 2001-03-30 2006-02-07 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
WO2003092043A2 (en) * 2001-07-20 2003-11-06 Quantum Dot Corporation Luminescent nanoparticles and methods for their preparation
EP2336409B1 (de) * 2002-08-13 2023-05-10 Massachusetts Institute of Technology Beschichteter Nanokristall und Verfahren zur Herstellung eines beschichteten Nanokristalles
US7253452B2 (en) * 2004-03-08 2007-08-07 Massachusetts Institute Of Technology Blue light emitting semiconductor nanocrystal materials
US7394094B2 (en) * 2005-12-29 2008-07-01 Massachusetts Institute Of Technology Semiconductor nanocrystal heterostructures
US7807265B2 (en) * 2006-05-12 2010-10-05 University Of Central Florida Research Foundation, Inc. Partially passivated quantum dots, process for making, and sensors therefrom

Also Published As

Publication number Publication date
AU2003302316A1 (en) 2004-06-30
CA2495309A1 (en) 2004-06-24
AU2003302316A8 (en) 2004-06-30
US20040110002A1 (en) 2004-06-10
EP1537263A4 (de) 2008-07-02
EP1537263B1 (de) 2010-11-17
US7825405B2 (en) 2010-11-02
US9410959B2 (en) 2016-08-09
EP2336409A3 (de) 2011-11-02
US20120319054A1 (en) 2012-12-20
US20110012061A1 (en) 2011-01-20
WO2004053929A2 (en) 2004-06-24
US8277942B2 (en) 2012-10-02
JP2006508012A (ja) 2006-03-09
WO2004053929A3 (en) 2005-01-27
EP2336409A2 (de) 2011-06-22
DE60335001D1 (de) 2010-12-30
US7390568B2 (en) 2008-06-24
EP2336409B1 (de) 2023-05-10
JP4931348B2 (ja) 2012-05-16
EP1537263A2 (de) 2005-06-08
US20090301564A1 (en) 2009-12-10
JP2012102011A (ja) 2012-05-31
CA2495309C (en) 2011-11-08

Similar Documents

Publication Publication Date Title
EP1537263A4 (de) Halbleiter-nanokristallheterostrukturen
WO2008063658A3 (en) Semiconductor nanocrystals and compositions and devices including same
WO2005110916A3 (en) Iii-v semiconductor nanocrystal complexes and methods of making same
IL211367A0 (en) An antibody, a fragment thereof, a method of preparing the same and a use of the antibody
AU2001225045A1 (en) Radiation-emitting semiconductor element, method for production thereof and radiation emitting optical component
TW200709360A (en) Semiconductor die package and method for making the same
ATE393169T1 (de) Il-7-fusionsproteine mit antikörperportionen, deren herstellung und deren verwendung
SG131773A1 (en) Method of dividing a non-metal substrate
AU2002358799A8 (en) Improved structured-functional bonding matrices for biomolecules
DE60205041D1 (de) Uv-stabilisierte thermoplastische olefine
ATE521085T1 (de) Verfahren zum herstellen einer halbleiter-auf- isolation-heterostruktur
EP1576655A4 (de) Stabilisierte halbleiternanokristalle
WO2007120255A3 (en) Semiconductor nanocrystal heterostructures
GB0315952D0 (en) Epitaxial substrate for compound semiconductor light-emitting device, method for producing the same and light-emitting device
ATE403729T1 (de) Frostschutzproteine aus basidiomyceten
SG111194A1 (en) Method for fabricating semiconductor packages, and leadframe assemblies for the fabrication thereof
TW200601468A (en) Method for fabricating semiconductor package
DE69838566D1 (de) III-V-Verbindungshalbleiter-Scheibe
DE10302134B8 (de) Halbleiterlaser mit Modulationsdotierung
ATE496398T1 (de) Fotoleitfähiges bauelement
DE60305056D1 (de) Mehrfachstrahlantenne mit photonischem bandlückenmaterial
ATE406676T1 (de) Optoelektronische vorrichtung mit einem laser mit integriertem modulator und herstellungsverfahren dafür
TW200725889A (en) Semiconductor device and method for forming the same
WO2006067167A3 (fr) Laser a semiconducteur stable en temperature et a faisceau homogene et procede de realisation
TW200731426A (en) Method of fabricating an exposed die package

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties