ATE489658T1 - Zusammensetzung fur antireflexbeschichtungen und verfahren zur bildung einer struktur - Google Patents

Zusammensetzung fur antireflexbeschichtungen und verfahren zur bildung einer struktur

Info

Publication number
ATE489658T1
ATE489658T1 AT03738519T AT03738519T ATE489658T1 AT E489658 T1 ATE489658 T1 AT E489658T1 AT 03738519 T AT03738519 T AT 03738519T AT 03738519 T AT03738519 T AT 03738519T AT E489658 T1 ATE489658 T1 AT E489658T1
Authority
AT
Austria
Prior art keywords
reflective coating
photoresist film
composition
forming
film
Prior art date
Application number
AT03738519T
Other languages
English (en)
Inventor
Yasushi Akiyama
Yusuke Takano
Original Assignee
Az Electronic Materials Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Japan filed Critical Az Electronic Materials Japan
Application granted granted Critical
Publication of ATE489658T1 publication Critical patent/ATE489658T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
AT03738519T 2002-07-04 2003-06-26 Zusammensetzung fur antireflexbeschichtungen und verfahren zur bildung einer struktur ATE489658T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002195582A JP3851594B2 (ja) 2002-07-04 2002-07-04 反射防止コーティング用組成物およびパターン形成方法
PCT/JP2003/008087 WO2004006023A1 (ja) 2002-07-04 2003-06-26 反射防止コーティング用組成物およびパターン形成方法

Publications (1)

Publication Number Publication Date
ATE489658T1 true ATE489658T1 (de) 2010-12-15

Family

ID=30112343

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03738519T ATE489658T1 (de) 2002-07-04 2003-06-26 Zusammensetzung fur antireflexbeschichtungen und verfahren zur bildung einer struktur

Country Status (10)

Country Link
US (1) US7365115B2 (de)
EP (1) EP1542078B1 (de)
JP (1) JP3851594B2 (de)
KR (1) KR100932086B1 (de)
CN (1) CN100476598C (de)
AT (1) ATE489658T1 (de)
DE (1) DE60335120D1 (de)
MY (1) MY138228A (de)
TW (1) TWI326013B (de)
WO (1) WO2004006023A1 (de)

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JP4322205B2 (ja) * 2004-12-27 2009-08-26 東京応化工業株式会社 レジスト保護膜形成用材料およびこれを用いたレジストパターン形成方法
US7288362B2 (en) 2005-02-23 2007-10-30 International Business Machines Corporation Immersion topcoat materials with improved performance
JP4482760B2 (ja) * 2005-04-26 2010-06-16 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
US7544750B2 (en) * 2005-10-13 2009-06-09 International Business Machines Corporation Top antireflective coating composition with low refractive index at 193nm radiation wavelength
KR20080070809A (ko) * 2005-11-21 2008-07-31 후지필름 가부시키가이샤 감광성 전사 재료, 격벽과 그 형성 방법, 광학 소자와 그제조 방법, 및 표시 장치
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CN103137441A (zh) * 2011-11-22 2013-06-05 上海华虹Nec电子有限公司 半导体工艺中制作细长型孤立线条图形的方法
CA2903248C (en) * 2013-03-01 2023-02-28 Board Of Trustees Of The University Of Arkansas Antireflective coating for glass applications and method of forming same
JP6848547B2 (ja) * 2016-04-22 2021-03-24 Ａｇｃ株式会社 コーティング用組成物およびフォトレジスト積層体の製造方法
CN110128904A (zh) * 2019-05-10 2019-08-16 甘肃华隆芯材料科技有限公司 一种用于光刻的上表面抗反射涂层组合物
CN110045443A (zh) * 2019-05-10 2019-07-23 甘肃华隆芯材料科技有限公司 一种用于上表面抗反射膜的组合物
CN113913060B (zh) * 2021-10-19 2022-05-03 苏州润邦半导体材料科技有限公司 一种顶部抗反射涂层组合物
CN114035405B (zh) * 2022-01-07 2022-04-22 甘肃华隆芯材料科技有限公司 制备顶部抗反射膜的组合物、顶部抗反射膜和含氟组合物
CN116875159B (zh) * 2023-09-05 2023-11-21 甘肃华隆芯材料科技有限公司 顶部抗反射涂层材料及其制备方法和应用
CN120871537B (zh) * 2025-09-25 2025-11-28 苏州皓申智能科技有限公司 一种抗氢氟酸蚀刻的光刻胶组合物

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Also Published As

Publication number Publication date
CN1666154A (zh) 2005-09-07
DE60335120D1 (de) 2011-01-05
EP1542078A4 (de) 2009-11-11
KR20050075328A (ko) 2005-07-20
EP1542078B1 (de) 2010-11-24
EP1542078A1 (de) 2005-06-15
KR100932086B1 (ko) 2009-12-16
TWI326013B (en) 2010-06-11
JP2004037887A (ja) 2004-02-05
US7365115B2 (en) 2008-04-29
CN100476598C (zh) 2009-04-08
WO2004006023A1 (ja) 2004-01-15
MY138228A (en) 2009-05-29
US20050239932A1 (en) 2005-10-27
TW200403315A (en) 2004-03-01
JP3851594B2 (ja) 2006-11-29

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