ATE517427T1 - Feldemissionselektronenquellenmatrix und deren herstellungsverfahren - Google Patents

Feldemissionselektronenquellenmatrix und deren herstellungsverfahren

Info

Publication number
ATE517427T1
ATE517427T1 AT99940499T AT99940499T ATE517427T1 AT E517427 T1 ATE517427 T1 AT E517427T1 AT 99940499 T AT99940499 T AT 99940499T AT 99940499 T AT99940499 T AT 99940499T AT E517427 T1 ATE517427 T1 AT E517427T1
Authority
AT
Austria
Prior art keywords
type
field emission
emission electron
layers
regions
Prior art date
Application number
AT99940499T
Other languages
English (en)
Inventor
Takashi Hatai
Takuya Komoda
Yoshiaki Honda
Koichi Aizawa
Yoshifumi Watabe
Tsutomu Ichihara
Yukihiro Kondo
Naomasa Oka
Nobuyoshi Koshida
Original Assignee
Panasonic Elec Works Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP36397098A external-priority patent/JP3084272B2/ja
Priority claimed from JP36396598A external-priority patent/JP2000188057A/ja
Priority claimed from JP14673999A external-priority patent/JP3076561B1/ja
Application filed by Panasonic Elec Works Co Ltd filed Critical Panasonic Elec Works Co Ltd
Application granted granted Critical
Publication of ATE517427T1 publication Critical patent/ATE517427T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/312—Cold cathodes having an electric field perpendicular to the surface thereof
    • H01J2201/3125—Metal-insulator-Metal [MIM] emission type cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
AT99940499T 1998-08-26 1999-08-26 Feldemissionselektronenquellenmatrix und deren herstellungsverfahren ATE517427T1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP23960698 1998-08-26
JP27233498 1998-09-25
JP36397098A JP3084272B2 (ja) 1998-12-22 1998-12-22 電界放射型電子源
JP36396598A JP2000188057A (ja) 1998-12-22 1998-12-22 電子源
JP14673999A JP3076561B1 (ja) 1999-05-26 1999-05-26 電界放射型電子源およびその製造方法
PCT/JP1999/004613 WO2000013197A1 (en) 1998-08-26 1999-08-26 Field emission source array, method for producing the same, and its use

Publications (1)

Publication Number Publication Date
ATE517427T1 true ATE517427T1 (de) 2011-08-15

Family

ID=27527774

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99940499T ATE517427T1 (de) 1998-08-26 1999-08-26 Feldemissionselektronenquellenmatrix und deren herstellungsverfahren

Country Status (9)

Country Link
US (1) US6794805B1 (de)
EP (1) EP1026721B1 (de)
KR (1) KR100366805B1 (de)
CN (1) CN1216393C (de)
AT (1) ATE517427T1 (de)
DK (1) DK1026721T3 (de)
ES (1) ES2372168T3 (de)
TW (1) TW442813B (de)
WO (1) WO2000013197A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU712966B2 (en) * 1994-09-22 1999-11-18 Canon Kabushiki Kaisha Electron-emitting device and method of manufacturing the same as well as electron source and image forming apparatus comprising such electron-emitting device
GB0025634D0 (en) * 2000-10-18 2000-12-06 Smiths Industries Plc Light-emitting devices and displays
JP3687522B2 (ja) * 2000-10-26 2005-08-24 松下電工株式会社 電界放射型電子源
TWI286773B (en) * 2000-10-26 2007-09-11 Matsushita Electric Works Ltd Field emission type electron source
US6771010B2 (en) 2001-04-30 2004-08-03 Hewlett-Packard Development Company, L.P. Silicon emitter with low porosity heavily doped contact layer
DE102004003481B4 (de) 2004-01-22 2007-01-25 Dtb Patente Gmbh Meßeinrichtung und Bohrvorrichtung für Tiefbohrungen sowie Verfahren zur Messung relevanter Daten bei Tiefbohrungen
US20060012304A1 (en) * 2004-07-13 2006-01-19 Seung-Hyun Son Plasma display panel and flat lamp using oxidized porous silicon
KR100670351B1 (ko) * 2005-08-24 2007-01-16 삼성에스디아이 주식회사 플라즈마 디스플레이 패널
KR100659099B1 (ko) * 2005-10-11 2006-12-19 삼성에스디아이 주식회사 표시 장치
KR100659100B1 (ko) * 2005-10-12 2006-12-21 삼성에스디아이 주식회사 디스플레이 장치와 이의 제조 방법
JP2007294126A (ja) * 2006-04-21 2007-11-08 Canon Inc 電子放出素子、電子源、画像表示装置、及び、電子放出素子の製造方法
JP2007311329A (ja) 2006-05-19 2007-11-29 Samsung Sdi Co Ltd 発光装置、発光装置の電子放出ユニット製造方法、及び表示装置
CN101609778B (zh) * 2009-07-20 2011-11-09 浙江师范大学 多孔硅场发射发光二极管阵列及其制作技术
US8642371B2 (en) * 2011-04-06 2014-02-04 Shamsoddin Mohajerzadeh Method and system for fabricating ion-selective field-effect transistor (ISFET)
CN102360999A (zh) * 2011-11-08 2012-02-22 福州大学 柔性可控有机pn结场发射电子源
US10032870B2 (en) * 2015-03-12 2018-07-24 Globalfoundries Inc. Low defect III-V semiconductor template on porous silicon
CN109285740B (zh) * 2018-11-12 2024-02-09 北京大学 一种片上微型电子源及其制造方法
DE102020113351B4 (de) 2020-05-18 2026-03-19 Dbt Gmbh Halbleiterbasierter Direktemitter, und Flüssigkeitsionisator mit derselben, Verfahren zum Erzeugen von freien Elektronen
KR20250010629A (ko) * 2022-06-17 2025-01-21 엘지전자 주식회사 전계 방출 소자 및 그를 이용한 엑스레이 발생 장치
CN120261244A (zh) * 2025-06-05 2025-07-04 中国科学院半导体研究所 阴极电子源阵列结构及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05342995A (ja) * 1992-06-08 1993-12-24 Olympus Optical Co Ltd Ｍｉｓ型冷陰極電子放出装置
JPH06140502A (ja) 1992-10-26 1994-05-20 Nec Corp 半導体装置の製造方法
JP3214256B2 (ja) 1994-10-12 2001-10-02 松下電器産業株式会社 電子パルス放出装置および表示装置
JPH0992130A (ja) 1995-09-25 1997-04-04 Olympus Optical Co Ltd 電荷発生器及びその製造方法
JP3281533B2 (ja) * 1996-03-26 2002-05-13 パイオニア株式会社 冷電子放出表示装置及び半導体冷電子放出素子
TW391022B (en) * 1997-10-29 2000-05-21 Mitsubishi Rayon Co Field emission electron source, method of producing the same, and use of the same
KR100338140B1 (ko) 1998-09-25 2002-05-24 이마이 기요스케 전계 방사형 전자원
TW436837B (en) 1998-11-16 2001-05-28 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof and display using the electron source
TW472273B (en) 1999-04-23 2002-01-11 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof
KR100374782B1 (ko) 1999-10-18 2003-03-04 마츠시다 덴코 가부시키가이샤 전계 방출형 전자원 및 그 제조방법

Also Published As

Publication number Publication date
KR100366805B1 (ko) 2003-01-09
CN1216393C (zh) 2005-08-24
DK1026721T3 (da) 2011-10-10
ES2372168T3 (es) 2012-01-16
TW442813B (en) 2001-06-23
KR20010031414A (ko) 2001-04-16
EP1026721A4 (de) 2006-12-06
CN1287678A (zh) 2001-03-14
EP1026721A1 (de) 2000-08-09
US6794805B1 (en) 2004-09-21
EP1026721B1 (de) 2011-07-20
WO2000013197A1 (en) 2000-03-09

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