DK1793404T3 - Fremgangsmåde til fremstilling af en feltemissionselektronkilde - Google Patents

Fremgangsmåde til fremstilling af en feltemissionselektronkilde

Info

Publication number
DK1793404T3
DK1793404T3 DK06025503.1T DK06025503T DK1793404T3 DK 1793404 T3 DK1793404 T3 DK 1793404T3 DK 06025503 T DK06025503 T DK 06025503T DK 1793404 T3 DK1793404 T3 DK 1793404T3
Authority
DK
Denmark
Prior art keywords
silicon substrate
type silicon
drift layer
strong field
field drift
Prior art date
Application number
DK06025503.1T
Other languages
English (en)
Inventor
Tsutomu Ichihara
Takashi Hatai
Takuya Komoda
Yoshiaki Honda
Koichi Aizawa
Yukihiro Kondo
Nobuyoshi Koshida
Yoshifumi Watabe
Original Assignee
Panasonic Elec Works Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Elec Works Co Ltd filed Critical Panasonic Elec Works Co Ltd
Application granted granted Critical
Publication of DK1793404T3 publication Critical patent/DK1793404T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
DK06025503.1T 1998-11-16 1999-11-16 Fremgangsmåde til fremstilling af en feltemissionselektronkilde DK1793404T3 (da)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP32510698 1998-11-16
JP10863299 1999-04-15
JP11571899 1999-04-23
JP26030299 1999-09-14
EP99122729A EP1003195B1 (en) 1998-11-16 1999-11-16 Field emission-type electron source and manufacturing method thereof and display using the electron source

Publications (1)

Publication Number Publication Date
DK1793404T3 true DK1793404T3 (da) 2011-10-10

Family

ID=27469650

Family Applications (2)

Application Number Title Priority Date Filing Date
DK99122729T DK1003195T3 (da) 1998-11-16 1999-11-16 Feltemissions-elektronkilde, fremgangsmåde til fremstilling deraf og et display med en sådan elektronkilde
DK06025503.1T DK1793404T3 (da) 1998-11-16 1999-11-16 Fremgangsmåde til fremstilling af en feltemissionselektronkilde

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DK99122729T DK1003195T3 (da) 1998-11-16 1999-11-16 Feltemissions-elektronkilde, fremgangsmåde til fremstilling deraf og et display med en sådan elektronkilde

Country Status (10)

Country Link
US (1) US6285118B1 (da)
EP (2) EP1003195B1 (da)
KR (1) KR100596189B1 (da)
CN (1) CN1282210C (da)
AT (2) ATE352858T1 (da)
DE (1) DE69934958T2 (da)
DK (2) DK1003195T3 (da)
ES (1) ES2281158T3 (da)
SG (1) SG86360A1 (da)
TW (1) TW436837B (da)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6794805B1 (en) 1998-05-26 2004-09-21 Matsushita Electric Works, Ltd. Field emission electron source, method of producing the same, and use of the same
KR100338140B1 (ko) * 1998-09-25 2002-05-24 이마이 기요스케 전계 방사형 전자원
TW472273B (en) * 1999-04-23 2002-01-11 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof
US20060127583A1 (en) * 2003-12-18 2006-06-15 Lichtenhan Joseph D Polyhedral oligomeric silsesquioxanes and polyhedral oligomeric silicates barrier materials for packaging
US20050192364A1 (en) * 2003-12-18 2005-09-01 Lichtenhan Joseph D. Polyhedral oligomeric silsesquioxanes and metallized polyhedral oligomeric silsesquioxanes as coatings, composites and additives
KR100374782B1 (ko) * 1999-10-18 2003-03-04 마츠시다 덴코 가부시키가이샤 전계 방출형 전자원 및 그 제조방법
US6815875B2 (en) * 2001-02-27 2004-11-09 Hewlett-Packard Development Company, L.P. Electron source having planar emission region and focusing structure
JP3716755B2 (ja) * 2001-04-05 2005-11-16 株式会社日立製作所 アクティブマトリクス型表示装置
EP1320116A1 (en) * 2001-04-24 2003-06-18 Matsushita Electric Works, Ltd. Field emission electron source and production method thereof
US6911768B2 (en) * 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6753544B2 (en) * 2001-04-30 2004-06-22 Hewlett-Packard Development Company, L.P. Silicon-based dielectric tunneling emitter
US6771010B2 (en) 2001-04-30 2004-08-03 Hewlett-Packard Development Company, L.P. Silicon emitter with low porosity heavily doped contact layer
US6781146B2 (en) 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US6753196B2 (en) * 2001-06-26 2004-06-22 Matsushita Electric Works, Ltd. Method of and apparatus for manufacturing field emission-type electron source
KR100491305B1 (ko) * 2001-09-25 2005-05-24 마츠시다 덴코 가부시키가이샤 전계방사형 전자원
DE60236835D1 (de) 2001-10-29 2010-08-12 Panasonic Elec Works Co Ltd Elektronenquelle des Feldemissionstyps und Verfahren zum Anlegen einer Vorspannung
US6558968B1 (en) * 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
US6852554B2 (en) * 2002-02-27 2005-02-08 Hewlett-Packard Development Company, L.P. Emission layer formed by rapid thermal formation process
WO2003077320A1 (en) * 2002-03-08 2003-09-18 Matsushita Electric Works, Ltd. Quantum device
WO2003096401A1 (en) * 2002-05-14 2003-11-20 Matsushita Electric Works, Ltd. Method for electrochemical oxidation
WO2004061891A2 (en) * 2002-12-27 2004-07-22 Matsushita Electric Works, Ltd. Field emission-type electron source and method of producing the same
JP2004265603A (ja) * 2003-01-14 2004-09-24 Sharp Corp 電子放出装置および電子放出素子クリーニング装置および電子放出素子クリーニング方法
US20050017624A1 (en) * 2003-07-23 2005-01-27 Thomas Novet Electron emitter with epitaxial layers
US7898160B2 (en) * 2003-11-25 2011-03-01 Panasonic Electric Works Co., Ltd. Method and apparatus for modifying object with electrons generated from cold cathode electron emitter
KR100612853B1 (ko) * 2004-07-21 2006-08-14 삼성전자주식회사 와이어 형태의 실리사이드를 포함하는 Ｓｉ 계열 물질층및 그 제조방법
RU2007125640A (ru) * 2004-12-08 2009-01-20 Хайбрид Плэстикс, Инк. (Us) Защитные материалы на основе полиэдральных олигомерных силсесквиоксанов и полиэдральных олигомерных силикатов для производства упаковки
EP2257126A4 (en) * 2008-02-15 2011-12-28 Showa Denko Kk METHOD FOR TREATING THE SURFACE OF AN ELECTRODE, ELECTRODE AND METHOD FOR PRODUCING AN ORGANIC ELECTROLUMINESCENT TELEPHONE
JP5374432B2 (ja) 2010-03-31 2013-12-25 パナソニック株式会社 電子デバイスおよびその製造方法
US9953989B2 (en) 2014-03-31 2018-04-24 Taiwan Semiconductor Manufacturing Company Limited and National Taiwan University Antifuse array and method of forming antifuse using anodic oxidation
US9528194B2 (en) 2014-03-31 2016-12-27 Taiwan Semiconductor Manufacturing Company Limited & National Taiwan University Systems and methods for forming nanowires using anodic oxidation
WO2025063944A1 (en) * 2023-09-19 2025-03-27 Julia Jean, Llc Cold cathode electron sources and methods of production

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3665241A (en) 1970-07-13 1972-05-23 Stanford Research Inst Field ionizer and field emission cathode structures and methods of production
US4291318A (en) * 1979-12-03 1981-09-22 Exxon Research & Engineering Co. Amorphous silicon MIS device
US5430300A (en) 1991-07-18 1995-07-04 The Texas A&M University System Oxidized porous silicon field emission devices
US5495121A (en) * 1991-09-30 1996-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPH0621509A (ja) * 1992-07-06 1994-01-28 Fujitsu Ltd ポーラスシリコンの製造方法
JPH0689891A (ja) 1992-09-08 1994-03-29 Fujitsu Ltd 多孔質シリコン層の加工方法
JPH0690018A (ja) * 1992-09-08 1994-03-29 Fujitsu Ltd 発光素子及びその製造方法
JP3027101B2 (ja) 1994-12-02 2000-03-27 シャープ株式会社 多孔質シリコンの形成方法
JP3226745B2 (ja) 1995-03-09 2001-11-05 科学技術振興事業団 半導体冷電子放出素子及びこれを用いた装置
KR100201554B1 (ko) * 1995-06-12 1999-06-15 하제준 전계방출어레이의 제조방법
US5872052A (en) * 1996-02-12 1999-02-16 Micron Technology, Inc. Planarization using plasma oxidized amorphous silicon
JP3281533B2 (ja) 1996-03-26 2002-05-13 パイオニア株式会社 冷電子放出表示装置及び半導体冷電子放出素子
JP3282535B2 (ja) 1997-04-01 2002-05-13 栗田工業株式会社 スパイラル型膜モジュール及び袋状膜並びに膜分離方法
US5869946A (en) 1997-02-27 1999-02-09 Stmicroelectronics, Inc. PWM control of motor driver
US5990605A (en) * 1997-03-25 1999-11-23 Pioneer Electronic Corporation Electron emission device and display device using the same
JP3537624B2 (ja) * 1997-03-25 2004-06-14 パイオニア株式会社 電子放出素子
JPH10272340A (ja) 1997-03-31 1998-10-13 Nippon Steel Corp コークス炉排ガス脱硝方法
TW391022B (en) 1997-10-29 2000-05-21 Mitsubishi Rayon Co Field emission electron source, method of producing the same, and use of the same
JP2966842B1 (ja) * 1998-09-25 1999-10-25 松下電工株式会社 電界放射型電子源

Also Published As

Publication number Publication date
EP1003195B1 (en) 2007-01-24
EP1793404A3 (en) 2008-11-05
EP1003195A3 (en) 2000-12-20
ATE519216T1 (de) 2011-08-15
KR20000035507A (ko) 2000-06-26
US6285118B1 (en) 2001-09-04
KR100596189B1 (ko) 2006-07-05
DE69934958D1 (de) 2007-03-15
ATE352858T1 (de) 2007-02-15
CN1254173A (zh) 2000-05-24
TW436837B (en) 2001-05-28
EP1003195A2 (en) 2000-05-24
CN1282210C (zh) 2006-10-25
EP1793404A2 (en) 2007-06-06
ES2281158T3 (es) 2007-09-16
DE69934958T2 (de) 2007-10-25
DK1003195T3 (da) 2007-05-21
EP1793404B1 (en) 2011-08-03
SG86360A1 (en) 2002-02-19

Similar Documents

Publication Publication Date Title
DK1003195T3 (da) Feltemissions-elektronkilde, fremgangsmåde til fremstilling deraf og et display med en sådan elektronkilde
DE69914556D1 (de) Feldemissionselektronenquelle
DK0913849T3 (da) Feltemissionselektronkilde, fremgangsmåde til fremstilling deraf og anvendelse deraf
JPS60241627A (ja) 電子流発生用半導体装置を具える撮像装置
ATE517427T1 (de) Feldemissionselektronenquellenmatrix und deren herstellungsverfahren
US5458735A (en) Process for the production of electroluminescent silicon structures
EP0957503A3 (en) Method of manufacturing a field emission cathode
JPH0340332A (ja) 電界放出型スウィチング素子およびその製造方法
KR940016429A (ko) 미소(微小)진공 디바이스
KR950005109A (ko) 전계 방출 어레이 및 그의 제조방법
EP1329926A4 (en) ELECTRON SOURCE OF THE FIELD EMISSION TYPE
JPS55158691A (en) Semiconductor light emitting device manufacture thereof
EP1255272A3 (en) Silicon electron emitter
JP2005515584A5 (da)
JPH10255645A (ja) 冷電子放出素子
JP3084272B2 (ja) 電界放射型電子源
JP3140573B2 (ja) Ｓｉ発光素子とその製造方法
JP3084280B2 (ja) 電界放射型電子源の製造方法および平面発光装置の製造方法およびディスプレイ装置の製造方法
JPS60175457A (ja) 電界効果トランジスタの製造方法
KR970030083A (ko) 실리사이드 팁을 에미터로 갖는 fea 제조방법
JPS5541749A (en) Injection-type laser device
KR970017856A (ko) 다이오드형 전계방출소자의 전계방출부와 양극간의 거리조절방법
KR970017781A (ko) 전계방출용 캐소드의 제조방법
JPS55107278A (en) Photoelectric conversion device
JPS5737872A (en) Semiconductor device