ATE518231T1 - Verfahren zur bildung eines ferroelektrischen dünnfilms - Google Patents

Verfahren zur bildung eines ferroelektrischen dünnfilms

Info

Publication number
ATE518231T1
ATE518231T1 AT04722986T AT04722986T ATE518231T1 AT E518231 T1 ATE518231 T1 AT E518231T1 AT 04722986 T AT04722986 T AT 04722986T AT 04722986 T AT04722986 T AT 04722986T AT E518231 T1 ATE518231 T1 AT E518231T1
Authority
AT
Austria
Prior art keywords
vinylidene fluoride
thin film
forming
fluoride homopolymer
crystal form
Prior art date
Application number
AT04722986T
Other languages
English (en)
Inventor
Takayuki Araki
Tetsuhiro Kodani
Original Assignee
Daikin Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Ind Ltd filed Critical Daikin Ind Ltd
Application granted granted Critical
Publication of ATE518231T1 publication Critical patent/ATE518231T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F14/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F14/18—Monomers containing fluorine
    • C08F14/22—Vinylidene fluoride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/098—Forming organic materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Inorganic Insulating Materials (AREA)
AT04722986T 2003-03-26 2004-03-24 Verfahren zur bildung eines ferroelektrischen dünnfilms ATE518231T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003086178 2003-03-26
JP2003422988 2003-12-19
PCT/JP2004/004020 WO2004086419A1 (ja) 2003-03-26 2004-03-24 強誘電性薄膜の形成方法

Publications (1)

Publication Number Publication Date
ATE518231T1 true ATE518231T1 (de) 2011-08-15

Family

ID=33100393

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04722986T ATE518231T1 (de) 2003-03-26 2004-03-24 Verfahren zur bildung eines ferroelektrischen dünnfilms

Country Status (4)

Country Link
US (1) US7517548B2 (de)
EP (1) EP1607986B1 (de)
AT (1) ATE518231T1 (de)
WO (1) WO2004086419A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100584863C (zh) * 2004-08-06 2010-01-27 大金工业株式会社 I型结晶结构的偏二氟乙烯均聚物的制造方法
TWI367034B (en) * 2008-08-01 2012-06-21 Ind Tech Res Inst Structure of a speaker unit
US20140355387A1 (en) * 2013-06-03 2014-12-04 Qualcomm Incorporated Ultrasonic receiver with coated piezoelectric layer
US10036734B2 (en) 2013-06-03 2018-07-31 Snaptrack, Inc. Ultrasonic sensor with bonded piezoelectric layer
US9719870B2 (en) * 2014-05-27 2017-08-01 Fondazione Istituto Italiano Di Tecnologia Read circuit for POSFET type tactile sensor devices
US11003884B2 (en) 2016-06-16 2021-05-11 Qualcomm Incorporated Fingerprint sensor device and methods thereof
CN109189272B (zh) * 2018-09-28 2021-01-15 惠州市华星光电技术有限公司 触控显示装置及其制造方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1562376A (de) 1967-03-30 1969-04-04
JPS5818787B2 (ja) * 1974-09-03 1983-04-14 呉羽化学工業株式会社 コウブンシフイルムデンキソシ ノ セイゾウホウホウ
JPS55126905A (en) 1979-03-26 1980-10-01 Nippon Telegraph & Telephone High molecular ferrodielectric material
JPS606220B2 (ja) * 1979-04-11 1985-02-16 三菱油化株式会社 ポリ弗化ビニリデンもしくは弗化ビニリデン共重合体の延伸薄膜製造法
JPS55157801A (en) * 1979-04-26 1980-12-08 Rikagaku Kenkyusho Process for producing piezooelectric current collecting high molecular film
JPS5657811A (en) 1979-10-17 1981-05-20 Daikin Ind Ltd Preparation of liquid fluorine-containing polymer
JPS56501745A (de) * 1979-11-30 1981-11-26
ATE25898T1 (de) * 1982-03-18 1987-03-15 British Telecomm Piezoelektrische und pyroelektrische folie.
JPS58209007A (ja) * 1982-05-28 1983-12-05 呉羽化学工業株式会社 フツ化ビニリデン共重合体成形物の配向分極体
JPS59117503A (ja) 1982-12-24 1984-07-06 Kureha Chem Ind Co Ltd 新規な含フツ素単量体の製造法
JPS59121889A (ja) * 1982-12-28 1984-07-14 Toshiba Corp 圧電バイモルフの製造方法
JPS6040137A (ja) * 1983-08-15 1985-03-02 Kureha Chem Ind Co Ltd フツ化ビニリデン共重合体フイルム
US4668449A (en) * 1984-09-11 1987-05-26 Raychem Corporation Articles comprising stabilized piezoelectric vinylidene fluoride polymers
US4808352A (en) * 1985-10-03 1989-02-28 Minnesota Mining And Manufacturing Company Crystalline vinylidene fluoride
IT1190145B (it) 1986-06-30 1988-02-10 Ausimont Spa Cotelomeri del fluoruro di vinilidene con olefine fluorurate e procedimento per la loro preparazione
KR920007285B1 (ko) * 1989-03-10 1992-08-29 구레하 가가꾸 고오교 가부시끼가이샤 광학 위상차판 및 그 제조 방법
US5009607A (en) 1989-07-24 1991-04-23 Rogers Corporation Flexible circuit connector
JP2824317B2 (ja) * 1990-05-29 1998-11-11 株式会社豊田中央研究所 Ｐｖｄｆ配向分極膜およびこれを用いた焦電型赤外線センサの製造方法
JPH04311711A (ja) * 1991-04-11 1992-11-04 Central Glass Co Ltd 強誘電性共重合体およびこれからなる薄膜の製造方法
JP2975463B2 (ja) * 1991-10-03 1999-11-10 三菱電機株式会社 有機非線形光学材料およびそれを用いた非線形光学デバイス
GB9125894D0 (en) * 1991-12-05 1992-02-05 Evode Ind Coatings Ltd Fluoropolymer-containing powders
US5429891A (en) * 1993-03-05 1995-07-04 Bell Communications Research, Inc. Crosslinked hybrid electrolyte film and methods of making and using the same
GB9322366D0 (en) 1993-10-29 1993-12-15 Dow Corning Cotelomen of vinylidene flouride and hexafluoropropene
JP3379883B2 (ja) * 1997-02-18 2003-02-24 信越化学工業株式会社 フッ化ビニリデン系樹脂の製造方法
NO312180B1 (no) * 2000-02-29 2002-04-08 Thin Film Electronics Asa Fremgangsmåte til behandling av ultratynne filmer av karbonholdige materialer
DE10017492B4 (de) * 2000-04-07 2007-05-24 Daimlerchrysler Ag Beschichtung zur passiven Flächendämpfung von schwingenden Oberflächen von Bauteilen sowie Verfahren zur Herstellung der Beschichtung
JP4755800B2 (ja) * 2002-08-20 2011-08-24 関西ティー・エル・オー株式会社 フッ化ビニリデンオリゴマー薄膜製造方法及び該薄膜を用いたデバイス
KR100699215B1 (ko) * 2004-03-19 2007-03-27 가부시키가이샤 도모에가와 세이시쇼 전자부품용 세퍼레이터 및 그 제조 방법

Also Published As

Publication number Publication date
EP1607986A1 (de) 2005-12-21
EP1607986A4 (de) 2009-01-07
WO2004086419A1 (ja) 2004-10-07
EP1607986B1 (de) 2011-07-27
US20070231462A1 (en) 2007-10-04
US7517548B2 (en) 2009-04-14

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Legal Events

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