ATE518251T1 - Leistungs-mosfet mit einer graben-gateelektrode - Google Patents
Leistungs-mosfet mit einer graben-gateelektrodeInfo
- Publication number
- ATE518251T1 ATE518251T1 AT00128393T AT00128393T ATE518251T1 AT E518251 T1 ATE518251 T1 AT E518251T1 AT 00128393 T AT00128393 T AT 00128393T AT 00128393 T AT00128393 T AT 00128393T AT E518251 T1 ATE518251 T1 AT E518251T1
- Authority
- AT
- Austria
- Prior art keywords
- drift region
- doped
- gate
- depletion regions
- mesa
- Prior art date
Links
- 238000009825 accumulation Methods 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 210000000746 body region Anatomy 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
- H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/156—Drain regions of DMOS transistors
- H10D62/157—Impurity concentrations or distributions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
- H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/476,320 US6285060B1 (en) | 1999-12-30 | 1999-12-30 | Barrier accumulation-mode MOSFET |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE518251T1 true ATE518251T1 (de) | 2011-08-15 |
Family
ID=23891378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT00128393T ATE518251T1 (de) | 1999-12-30 | 2000-12-22 | Leistungs-mosfet mit einer graben-gateelektrode |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6285060B1 (de) |
| EP (1) | EP1113501B1 (de) |
| JP (1) | JP2001210822A (de) |
| AT (1) | ATE518251T1 (de) |
Families Citing this family (84)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001085685A (ja) | 1999-09-13 | 2001-03-30 | Shindengen Electric Mfg Co Ltd | トランジスタ |
| US6348712B1 (en) * | 1999-10-27 | 2002-02-19 | Siliconix Incorporated | High density trench-gated power MOSFET |
| US6461918B1 (en) | 1999-12-20 | 2002-10-08 | Fairchild Semiconductor Corporation | Power MOS device with improved gate charge performance |
| GB0005650D0 (en) * | 2000-03-10 | 2000-05-03 | Koninkl Philips Electronics Nv | Field-effect semiconductor devices |
| US7745289B2 (en) | 2000-08-16 | 2010-06-29 | Fairchild Semiconductor Corporation | Method of forming a FET having ultra-low on-resistance and low gate charge |
| KR100338783B1 (en) * | 2000-10-28 | 2002-06-01 | Samsung Electronics Co Ltd | Semiconductor device having expanded effective width of active region and fabricating method thereof |
| US6677641B2 (en) | 2001-10-17 | 2004-01-13 | Fairchild Semiconductor Corporation | Semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
| US6916745B2 (en) | 2003-05-20 | 2005-07-12 | Fairchild Semiconductor Corporation | Structure and method for forming a trench MOSFET having self-aligned features |
| US6710403B2 (en) | 2002-07-30 | 2004-03-23 | Fairchild Semiconductor Corporation | Dual trench power MOSFET |
| US7132712B2 (en) | 2002-11-05 | 2006-11-07 | Fairchild Semiconductor Corporation | Trench structure having one or more diodes embedded therein adjacent a PN junction |
| US7345342B2 (en) | 2001-01-30 | 2008-03-18 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| US6803626B2 (en) | 2002-07-18 | 2004-10-12 | Fairchild Semiconductor Corporation | Vertical charge control semiconductor device |
| US6818513B2 (en) | 2001-01-30 | 2004-11-16 | Fairchild Semiconductor Corporation | Method of forming a field effect transistor having a lateral depletion structure |
| US6870220B2 (en) * | 2002-08-23 | 2005-03-22 | Fairchild Semiconductor Corporation | Method and apparatus for improved MOS gating to reduce miller capacitance and switching losses |
| JP2002270840A (ja) * | 2001-03-09 | 2002-09-20 | Toshiba Corp | パワーｍｏｓｆｅｔ |
| US6639276B2 (en) | 2001-07-05 | 2003-10-28 | International Rectifier Corporation | Power MOSFET with ultra-deep base and reduced on resistance |
| JP2003046085A (ja) * | 2001-08-01 | 2003-02-14 | Seiko Epson Corp | 半導体装置及びその製造方法 |
| US6486511B1 (en) * | 2001-08-30 | 2002-11-26 | Northrop Grumman Corporation | Solid state RF switch with high cutoff frequency |
| GB0122122D0 (en) * | 2001-09-13 | 2001-10-31 | Koninkl Philips Electronics Nv | Trench-gate semiconductor devices and their manufacture |
| US7061066B2 (en) | 2001-10-17 | 2006-06-13 | Fairchild Semiconductor Corporation | Schottky diode using charge balance structure |
| US6657254B2 (en) * | 2001-11-21 | 2003-12-02 | General Semiconductor, Inc. | Trench MOSFET device with improved on-resistance |
| DE10207309B4 (de) * | 2002-02-21 | 2015-07-23 | Infineon Technologies Ag | MOS-Transistoreinrichtung |
| KR100859701B1 (ko) | 2002-02-23 | 2008-09-23 | 페어차일드코리아반도체 주식회사 | 고전압 수평형 디모스 트랜지스터 및 그 제조 방법 |
| US6573561B1 (en) * | 2002-03-11 | 2003-06-03 | International Business Machines Corporation | Vertical MOSFET with asymmetrically graded channel doping |
| US7701001B2 (en) * | 2002-05-03 | 2010-04-20 | International Rectifier Corporation | Short channel trench power MOSFET with low threshold voltage |
| RU2387451C2 (ru) * | 2002-05-10 | 2010-04-27 | Ф.Хоффманн-Ля Рош Аг | Бисфосфоновые кислоты, предназначенные для лечения и профилактики остеопороза |
| US7576388B1 (en) | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
| US7033891B2 (en) | 2002-10-03 | 2006-04-25 | Fairchild Semiconductor Corporation | Trench gate laterally diffused MOSFET devices and methods for making such devices |
| US6710418B1 (en) | 2002-10-11 | 2004-03-23 | Fairchild Semiconductor Corporation | Schottky rectifier with insulation-filled trenches and method of forming the same |
| JP2004304155A (ja) * | 2003-03-19 | 2004-10-28 | Seiko Instruments Inc | 半導体装置の製造方法 |
| JP2004342863A (ja) * | 2003-05-16 | 2004-12-02 | Shindengen Electric Mfg Co Ltd | 半導体装置 |
| US7638841B2 (en) | 2003-05-20 | 2009-12-29 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| GB0324313D0 (en) * | 2003-10-17 | 2003-11-19 | Koninkl Philips Electronics Nv | Trench insulated gate field effect transistor |
| DE10355588B4 (de) * | 2003-11-28 | 2006-06-14 | Infineon Technologies Ag | MOS-Transistoreinrichtung |
| KR100994719B1 (ko) | 2003-11-28 | 2010-11-16 | 페어차일드코리아반도체 주식회사 | 슈퍼정션 반도체장치 |
| US7368777B2 (en) | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
| JP2005302925A (ja) * | 2004-04-09 | 2005-10-27 | Toshiba Corp | 半導体装置 |
| US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
| US7265415B2 (en) | 2004-10-08 | 2007-09-04 | Fairchild Semiconductor Corporation | MOS-gated transistor with reduced miller capacitance |
| KR100712989B1 (ko) | 2005-03-14 | 2007-05-02 | 주식회사 하이닉스반도체 | 리세스 채널 및 비대칭접합 구조를 갖는 반도체 소자의제조방법 |
| DE102005014744B4 (de) | 2005-03-31 | 2009-06-18 | Infineon Technologies Ag | Trenchtransistor mit erhöhter Avalanchefestigkeit und Herstellungsverfahren |
| DE102005014743B4 (de) * | 2005-03-31 | 2013-12-05 | Infineon Technologies Austria Ag | MOS-Feldplattentrench-Transistoreinrichtung |
| AT504998A2 (de) | 2005-04-06 | 2008-09-15 | Fairchild Semiconductor | Trenched-gate-feldeffekttransistoren und verfahren zum bilden derselben |
| DE112006001516T5 (de) | 2005-06-10 | 2008-04-17 | Fairchild Semiconductor Corp. | Feldeffekttransistor mit Ladungsgleichgewicht |
| US7385248B2 (en) * | 2005-08-09 | 2008-06-10 | Fairchild Semiconductor Corporation | Shielded gate field effect transistor with improved inter-poly dielectric |
| US7446374B2 (en) | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
| US7319256B1 (en) | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
| US9437729B2 (en) * | 2007-01-08 | 2016-09-06 | Vishay-Siliconix | High-density power MOSFET with planarized metalization |
| US9947770B2 (en) | 2007-04-03 | 2018-04-17 | Vishay-Siliconix | Self-aligned trench MOSFET and method of manufacture |
| CN101868856B (zh) | 2007-09-21 | 2014-03-12 | 飞兆半导体公司 | 用于功率器件的超结结构及制造方法 |
| US9484451B2 (en) | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
| US7772668B2 (en) | 2007-12-26 | 2010-08-10 | Fairchild Semiconductor Corporation | Shielded gate trench FET with multiple channels |
| JP5494474B2 (ja) * | 2008-03-24 | 2014-05-14 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| US20120273916A1 (en) | 2011-04-27 | 2012-11-01 | Yedinak Joseph A | Superjunction Structures for Power Devices and Methods of Manufacture |
| US8426275B2 (en) | 2009-01-09 | 2013-04-23 | Niko Semiconductor Co., Ltd. | Fabrication method of trenched power MOSFET |
| TWI435447B (zh) * | 2009-01-09 | 2014-04-21 | Niko Semiconductor Co Ltd | 功率金氧半導體場效電晶體及其製造方法 |
| US7989293B2 (en) * | 2009-02-24 | 2011-08-02 | Maxpower Semiconductor, Inc. | Trench device structure and fabrication |
| US9443974B2 (en) | 2009-08-27 | 2016-09-13 | Vishay-Siliconix | Super junction trench power MOSFET device fabrication |
| US9431530B2 (en) * | 2009-10-20 | 2016-08-30 | Vishay-Siliconix | Super-high density trench MOSFET |
| US10026835B2 (en) * | 2009-10-28 | 2018-07-17 | Vishay-Siliconix | Field boosted metal-oxide-semiconductor field effect transistor |
| US8129778B2 (en) * | 2009-12-02 | 2012-03-06 | Fairchild Semiconductor Corporation | Semiconductor devices and methods for making the same |
| US20110198689A1 (en) * | 2010-02-17 | 2011-08-18 | Suku Kim | Semiconductor devices containing trench mosfets with superjunctions |
| US8432000B2 (en) | 2010-06-18 | 2013-04-30 | Fairchild Semiconductor Corporation | Trench MOS barrier schottky rectifier with a planar surface using CMP techniques |
| JP2012204636A (ja) * | 2011-03-25 | 2012-10-22 | Toshiba Corp | 半導体装置およびその製造方法 |
| US8786010B2 (en) | 2011-04-27 | 2014-07-22 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8673700B2 (en) | 2011-04-27 | 2014-03-18 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8772868B2 (en) | 2011-04-27 | 2014-07-08 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8836028B2 (en) | 2011-04-27 | 2014-09-16 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US10164043B2 (en) * | 2012-01-11 | 2018-12-25 | Infineon Technologies Ag | Semiconductor diode and method for forming a semiconductor diode |
| US9842911B2 (en) | 2012-05-30 | 2017-12-12 | Vishay-Siliconix | Adaptive charge balanced edge termination |
| US9508596B2 (en) | 2014-06-20 | 2016-11-29 | Vishay-Siliconix | Processes used in fabricating a metal-insulator-semiconductor field effect transistor |
| US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
| EP3183753B1 (de) | 2014-08-19 | 2025-03-19 | Vishay-Siliconix | Mosfet-halbleiteranordnung |
| KR102098996B1 (ko) | 2014-08-19 | 2020-04-08 | 비쉐이-실리코닉스 | 초접합 금속 산화물 반도체 전계 효과 트랜지스터 |
| DE102014114230B4 (de) * | 2014-09-30 | 2021-10-07 | Infineon Technologies Ag | Halbleitervorrichtung und Herstellungsverfahren hierfür |
| US9577073B2 (en) * | 2014-12-11 | 2017-02-21 | Infineon Technologies Ag | Method of forming a silicon-carbide device with a shielded gate |
| DE102015208097B4 (de) * | 2015-04-30 | 2022-03-31 | Infineon Technologies Ag | Herstellen einer Halbleitervorrichtung durch Epitaxie |
| DE102016109555A1 (de) * | 2016-05-24 | 2017-11-30 | Infineon Technologies Austria Ag | Leistungshalbleiterbauelement und verfahren zur herstellung eines leistungshalbleiterbauelements |
| DE102017118352A1 (de) * | 2017-08-11 | 2019-02-14 | Infineon Technologies Ag | Halbleiterbauelement mit grabenstrukturen und herstellungsverfahren hierfür |
| JP2019046991A (ja) * | 2017-09-04 | 2019-03-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US10847617B2 (en) | 2017-12-14 | 2020-11-24 | Fuji Electric Co., Ltd. | Semiconductor device |
| JP7442932B2 (ja) * | 2020-03-09 | 2024-03-05 | 三菱電機株式会社 | 半導体装置 |
| EP4047665A1 (de) | 2021-02-17 | 2022-08-24 | Infineon Technologies Austria AG | Halbleiterleistungsvorrichtung und verfahren zur herstellung davon |
| JP2024132218A (ja) * | 2023-03-17 | 2024-09-30 | 株式会社東芝 | 半導体装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4364072A (en) * | 1978-03-17 | 1982-12-14 | Zaidan Hojin Handotai Kenkyu Shinkokai | Static induction type semiconductor device with multiple doped layers for potential modification |
| US4941026A (en) * | 1986-12-05 | 1990-07-10 | General Electric Company | Semiconductor devices exhibiting minimum on-resistance |
| US4903189A (en) * | 1988-04-27 | 1990-02-20 | General Electric Company | Low noise, high frequency synchronous rectifier |
| US5072266A (en) * | 1988-12-27 | 1991-12-10 | Siliconix Incorporated | Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry |
| JPH045A (ja) * | 1990-04-17 | 1992-01-06 | Takashi Kimura | 空気シリンダにおけるピストンロッドの減速制御方法 |
| US5326711A (en) * | 1993-01-04 | 1994-07-05 | Texas Instruments Incorporated | High performance high voltage vertical transistor and method of fabrication |
| US5405794A (en) * | 1994-06-14 | 1995-04-11 | Philips Electronics North America Corporation | Method of producing VDMOS device of increased power density |
| US5688725A (en) * | 1994-12-30 | 1997-11-18 | Siliconix Incorporated | Method of making a trench mosfet with heavily doped delta layer to provide low on-resistance |
| US5592005A (en) * | 1995-03-31 | 1997-01-07 | Siliconix Incorporated | Punch-through field effect transistor |
| US5637898A (en) * | 1995-12-22 | 1997-06-10 | North Carolina State University | Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance |
| US5814858A (en) * | 1996-03-15 | 1998-09-29 | Siliconix Incorporated | Vertical power MOSFET having reduced sensitivity to variations in thickness of epitaxial layer |
| JP3216700B2 (ja) | 1996-05-22 | 2001-10-09 | サンケン電気株式会社 | 半導体発光素子 |
| JP3505039B2 (ja) * | 1996-07-12 | 2004-03-08 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
| US6090716A (en) * | 1996-12-17 | 2000-07-18 | Siliconix Incorporated | Method of fabricating a field effect transistor |
| JPH10256550A (ja) * | 1997-01-09 | 1998-09-25 | Toshiba Corp | 半導体装置 |
| GB9808234D0 (en) * | 1998-04-17 | 1998-06-17 | Koninkl Philips Electronics Nv | Mnufacture of trench-gate semiconductor devices |
-
1999
- 1999-12-30 US US09/476,320 patent/US6285060B1/en not_active Expired - Lifetime
-
2000
- 2000-12-22 AT AT00128393T patent/ATE518251T1/de not_active IP Right Cessation
- 2000-12-22 EP EP00128393A patent/EP1113501B1/de not_active Expired - Lifetime
- 2000-12-26 JP JP2000395089A patent/JP2001210822A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001210822A (ja) | 2001-08-03 |
| EP1113501A3 (de) | 2004-07-07 |
| EP1113501B1 (de) | 2011-07-27 |
| EP1113501A2 (de) | 2001-07-04 |
| US6285060B1 (en) | 2001-09-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE518251T1 (de) | Leistungs-mosfet mit einer graben-gateelektrode | |
| JP4981013B2 (ja) | 完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーｍｏｓｆｅｔ | |
| CN101385147B (zh) | 提高肖特基击穿电压(bv)而不影响集成的mosfet-肖特基器件布局 | |
| CN106229343B (zh) | 超结器件 | |
| US8053858B2 (en) | Integrated latch-up free insulated gate bipolar transistor | |
| US6211552B1 (en) | Resurf LDMOS device with deep drain region | |
| US9419092B2 (en) | Termination for SiC trench devices | |
| JP4537646B2 (ja) | 半導体装置 | |
| WO2000070684A3 (en) | Silicon carbide power devices comprising charge coupling regions | |
| US7863678B2 (en) | Insulated-gate field-effect transistor | |
| US7719080B2 (en) | Semiconductor device with a conduction enhancement layer | |
| US20040135178A1 (en) | Semiconductor device | |
| GB2292835A (en) | Trench depletion mosfet | |
| JP2004335990A (ja) | Ｍｉｓ型半導体装置 | |
| EP2293336A4 (de) | Halbleiterbauelement | |
| CN109119419B (zh) | 一种集成肖特基续流二极管碳化硅槽栅mosfet | |
| US20120126317A1 (en) | Accufet with integrated clamping circuit | |
| CN106571391B (zh) | 坚固的功率半导体场效应晶体管结构 | |
| JP3522887B2 (ja) | 高耐圧半導体素子 | |
| JP2002521823A (ja) | 接合型ｆｅｔ半導体装置 | |
| JPH09246545A (ja) | 電力用半導体素子 | |
| JP2768362B2 (ja) | Ｍｏｓ型半導体装置 | |
| JP2004055968A (ja) | 半導体装置 | |
| JP2629437B2 (ja) | 横型絶縁ゲート型バイポーラトランジスタ | |
| CN214411210U (zh) | 低功耗沟槽式功率mos器件 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |