ATE519216T1 - Verfahren zur herstellung einer feldemissions- elektronenquelle - Google Patents

Verfahren zur herstellung einer feldemissions- elektronenquelle

Info

Publication number
ATE519216T1
ATE519216T1 AT06025503T AT06025503T ATE519216T1 AT E519216 T1 ATE519216 T1 AT E519216T1 AT 06025503 T AT06025503 T AT 06025503T AT 06025503 T AT06025503 T AT 06025503T AT E519216 T1 ATE519216 T1 AT E519216T1
Authority
AT
Austria
Prior art keywords
silicon substrate
type silicon
drift layer
strong field
field drift
Prior art date
Application number
AT06025503T
Other languages
English (en)
Inventor
Takashi Hatai
Takuya Komoda
Yoshiaki Honda
Koichi Aizawa
Yoshifumi Watabe
Tsutomu Ichihara
Yukihiro Kondo
Nobuyoshi Koshida
Original Assignee
Panasonic Elec Works Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Elec Works Co Ltd filed Critical Panasonic Elec Works Co Ltd
Application granted granted Critical
Publication of ATE519216T1 publication Critical patent/ATE519216T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
AT06025503T 1998-11-16 1999-11-16 Verfahren zur herstellung einer feldemissions- elektronenquelle ATE519216T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP32510698 1998-11-16
JP10863299 1999-04-15
JP11571899 1999-04-23
JP26030299 1999-09-14

Publications (1)

Publication Number Publication Date
ATE519216T1 true ATE519216T1 (de) 2011-08-15

Family

ID=27469650

Family Applications (2)

Application Number Title Priority Date Filing Date
AT99122729T ATE352858T1 (de) 1998-11-16 1999-11-16 Feldemissions-elektronenquelle, verfahren zu deren herstellung und anzeigevorrichtung mit einer solchen elektronenquelle
AT06025503T ATE519216T1 (de) 1998-11-16 1999-11-16 Verfahren zur herstellung einer feldemissions- elektronenquelle

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT99122729T ATE352858T1 (de) 1998-11-16 1999-11-16 Feldemissions-elektronenquelle, verfahren zu deren herstellung und anzeigevorrichtung mit einer solchen elektronenquelle

Country Status (10)

Country Link
US (1) US6285118B1 (de)
EP (2) EP1003195B1 (de)
KR (1) KR100596189B1 (de)
CN (1) CN1282210C (de)
AT (2) ATE352858T1 (de)
DE (1) DE69934958T2 (de)
DK (2) DK1003195T3 (de)
ES (1) ES2281158T3 (de)
SG (1) SG86360A1 (de)
TW (1) TW436837B (de)

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US20050192364A1 (en) * 2003-12-18 2005-09-01 Lichtenhan Joseph D. Polyhedral oligomeric silsesquioxanes and metallized polyhedral oligomeric silsesquioxanes as coatings, composites and additives
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US6815875B2 (en) * 2001-02-27 2004-11-09 Hewlett-Packard Development Company, L.P. Electron source having planar emission region and focusing structure
JP3716755B2 (ja) * 2001-04-05 2005-11-16 株式会社日立製作所 アクティブマトリクス型表示装置
EP1320116A1 (de) * 2001-04-24 2003-06-18 Matsushita Electric Works, Ltd. Feldemissions-elektronenquelle und verfahren zu ihrer herstellung
US6911768B2 (en) * 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6753544B2 (en) * 2001-04-30 2004-06-22 Hewlett-Packard Development Company, L.P. Silicon-based dielectric tunneling emitter
US6771010B2 (en) 2001-04-30 2004-08-03 Hewlett-Packard Development Company, L.P. Silicon emitter with low porosity heavily doped contact layer
US6781146B2 (en) 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US6753196B2 (en) * 2001-06-26 2004-06-22 Matsushita Electric Works, Ltd. Method of and apparatus for manufacturing field emission-type electron source
KR100491305B1 (ko) * 2001-09-25 2005-05-24 마츠시다 덴코 가부시키가이샤 전계방사형 전자원
DE60236835D1 (de) 2001-10-29 2010-08-12 Panasonic Elec Works Co Ltd Elektronenquelle des Feldemissionstyps und Verfahren zum Anlegen einer Vorspannung
US6558968B1 (en) * 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
US6852554B2 (en) * 2002-02-27 2005-02-08 Hewlett-Packard Development Company, L.P. Emission layer formed by rapid thermal formation process
WO2003077320A1 (en) * 2002-03-08 2003-09-18 Matsushita Electric Works, Ltd. Quantum device
WO2003096401A1 (en) * 2002-05-14 2003-11-20 Matsushita Electric Works, Ltd. Method for electrochemical oxidation
WO2004061891A2 (en) * 2002-12-27 2004-07-22 Matsushita Electric Works, Ltd. Field emission-type electron source and method of producing the same
JP2004265603A (ja) * 2003-01-14 2004-09-24 Sharp Corp 電子放出装置および電子放出素子クリーニング装置および電子放出素子クリーニング方法
US20050017624A1 (en) * 2003-07-23 2005-01-27 Thomas Novet Electron emitter with epitaxial layers
US7898160B2 (en) * 2003-11-25 2011-03-01 Panasonic Electric Works Co., Ltd. Method and apparatus for modifying object with electrons generated from cold cathode electron emitter
KR100612853B1 (ko) * 2004-07-21 2006-08-14 삼성전자주식회사 와이어 형태의 실리사이드를 포함하는 Ｓｉ 계열 물질층및 그 제조방법
RU2007125640A (ru) * 2004-12-08 2009-01-20 Хайбрид Плэстикс, Инк. (Us) Защитные материалы на основе полиэдральных олигомерных силсесквиоксанов и полиэдральных олигомерных силикатов для производства упаковки
EP2257126A4 (de) * 2008-02-15 2011-12-28 Showa Denko Kk Verfahren zur behandlung der oberfläche einer elektrode, elektrode und verfahren zur herstellung eines organischen elektrolumineszenzelements
JP5374432B2 (ja) 2010-03-31 2013-12-25 パナソニック株式会社 電子デバイスおよびその製造方法
US9953989B2 (en) 2014-03-31 2018-04-24 Taiwan Semiconductor Manufacturing Company Limited and National Taiwan University Antifuse array and method of forming antifuse using anodic oxidation
US9528194B2 (en) 2014-03-31 2016-12-27 Taiwan Semiconductor Manufacturing Company Limited & National Taiwan University Systems and methods for forming nanowires using anodic oxidation
WO2025063944A1 (en) * 2023-09-19 2025-03-27 Julia Jean, Llc Cold cathode electron sources and methods of production

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Also Published As

Publication number Publication date
EP1003195B1 (de) 2007-01-24
EP1793404A3 (de) 2008-11-05
EP1003195A3 (de) 2000-12-20
KR20000035507A (ko) 2000-06-26
US6285118B1 (en) 2001-09-04
KR100596189B1 (ko) 2006-07-05
DE69934958D1 (de) 2007-03-15
ATE352858T1 (de) 2007-02-15
CN1254173A (zh) 2000-05-24
TW436837B (en) 2001-05-28
EP1003195A2 (de) 2000-05-24
DK1793404T3 (da) 2011-10-10
CN1282210C (zh) 2006-10-25
EP1793404A2 (de) 2007-06-06
ES2281158T3 (es) 2007-09-16
DE69934958T2 (de) 2007-10-25
DK1003195T3 (da) 2007-05-21
EP1793404B1 (de) 2011-08-03
SG86360A1 (en) 2002-02-19

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