ATE352858T1 - Feldemissions-elektronenquelle, verfahren zu deren herstellung und anzeigevorrichtung mit einer solchen elektronenquelle - Google Patents

Feldemissions-elektronenquelle, verfahren zu deren herstellung und anzeigevorrichtung mit einer solchen elektronenquelle

Info

Publication number
ATE352858T1
ATE352858T1 AT99122729T AT99122729T ATE352858T1 AT E352858 T1 ATE352858 T1 AT E352858T1 AT 99122729 T AT99122729 T AT 99122729T AT 99122729 T AT99122729 T AT 99122729T AT E352858 T1 ATE352858 T1 AT E352858T1
Authority
AT
Austria
Prior art keywords
electron source
silicon substrate
type silicon
drift layer
strong field
Prior art date
Application number
AT99122729T
Other languages
English (en)
Inventor
Takashi Hatai
Takuya Komoda
Yoshiaki Honda
Koichi Aizawa
Yoshifumi Watabe
Tsutomu Ichihara
Yukihiro Kondo
Nobuyoshi Koshida
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Application granted granted Critical
Publication of ATE352858T1 publication Critical patent/ATE352858T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
AT99122729T 1998-11-16 1999-11-16 Feldemissions-elektronenquelle, verfahren zu deren herstellung und anzeigevorrichtung mit einer solchen elektronenquelle ATE352858T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP32510698 1998-11-16
JP10863299 1999-04-15
JP11571899 1999-04-23
JP26030299 1999-09-14

Publications (1)

Publication Number Publication Date
ATE352858T1 true ATE352858T1 (de) 2007-02-15

Family

ID=27469650

Family Applications (2)

Application Number Title Priority Date Filing Date
AT99122729T ATE352858T1 (de) 1998-11-16 1999-11-16 Feldemissions-elektronenquelle, verfahren zu deren herstellung und anzeigevorrichtung mit einer solchen elektronenquelle
AT06025503T ATE519216T1 (de) 1998-11-16 1999-11-16 Verfahren zur herstellung einer feldemissions- elektronenquelle

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT06025503T ATE519216T1 (de) 1998-11-16 1999-11-16 Verfahren zur herstellung einer feldemissions- elektronenquelle

Country Status (10)

Country Link
US (1) US6285118B1 (de)
EP (2) EP1003195B1 (de)
KR (1) KR100596189B1 (de)
CN (1) CN1282210C (de)
AT (2) ATE352858T1 (de)
DE (1) DE69934958T2 (de)
DK (2) DK1793404T3 (de)
ES (1) ES2281158T3 (de)
SG (1) SG86360A1 (de)
TW (1) TW436837B (de)

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TW472273B (en) * 1999-04-23 2002-01-11 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof
US20050192364A1 (en) * 2003-12-18 2005-09-01 Lichtenhan Joseph D. Polyhedral oligomeric silsesquioxanes and metallized polyhedral oligomeric silsesquioxanes as coatings, composites and additives
US20060127583A1 (en) * 2003-12-18 2006-06-15 Lichtenhan Joseph D Polyhedral oligomeric silsesquioxanes and polyhedral oligomeric silicates barrier materials for packaging
EP1094484A2 (de) * 1999-10-18 2001-04-25 Matsushita Electric Works, Ltd. Feldemissions-Elektronenquelle und Verfahren zu deren Herstellung
US6815875B2 (en) * 2001-02-27 2004-11-09 Hewlett-Packard Development Company, L.P. Electron source having planar emission region and focusing structure
JP3716755B2 (ja) * 2001-04-05 2005-11-16 株式会社日立製作所 アクティブマトリクス型表示装置
WO2002089166A1 (en) * 2001-04-24 2002-11-07 Matsushita Electric Works, Ltd. Field emission electron source and production method thereof
US6781146B2 (en) * 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US6911768B2 (en) * 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6753544B2 (en) * 2001-04-30 2004-06-22 Hewlett-Packard Development Company, L.P. Silicon-based dielectric tunneling emitter
US6771010B2 (en) 2001-04-30 2004-08-03 Hewlett-Packard Development Company, L.P. Silicon emitter with low porosity heavily doped contact layer
EP1276130A2 (de) * 2001-06-26 2003-01-15 Matsushita Electric Works, Ltd. Verfahren und Vorrichtung zur Herstellung einer Feldemissions-Elektronenquelle
CN1216394C (zh) * 2001-09-25 2005-08-24 松下电工株式会社 场致发射型电子源
KR100497292B1 (ko) 2001-10-29 2005-06-28 마츠시다 덴코 가부시키가이샤 전계방사형 전자원 및 그 구동방법
US6558968B1 (en) * 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
US6852554B2 (en) 2002-02-27 2005-02-08 Hewlett-Packard Development Company, L.P. Emission layer formed by rapid thermal formation process
CN100376040C (zh) * 2002-03-08 2008-03-19 松下电工株式会社 量子装置
WO2003096401A1 (en) * 2002-05-14 2003-11-20 Matsushita Electric Works, Ltd. Method for electrochemical oxidation
JP4461802B2 (ja) * 2002-12-27 2010-05-12 パナソニック電工株式会社 電界放射型電子源およびその製造方法
JP2004265603A (ja) * 2003-01-14 2004-09-24 Sharp Corp 電子放出装置および電子放出素子クリーニング装置および電子放出素子クリーニング方法
US20050017624A1 (en) * 2003-07-23 2005-01-27 Thomas Novet Electron emitter with epitaxial layers
EP1690264A2 (de) * 2003-11-25 2006-08-16 Matsushita Electric Works, Ltd. Verfahren und vorrichtung zum modifizieren eines objekts mit als ein kathoden-elektronenemitter erzeugten elektronen
KR100612853B1 (ko) * 2004-07-21 2006-08-14 삼성전자주식회사 와이어 형태의 실리사이드를 포함하는 Ｓｉ 계열 물질층및 그 제조방법
WO2006073662A2 (en) * 2004-12-08 2006-07-13 Hybrid Plastics, Inc. Polyhedral oligomeric silsesquioxanes and polyhedral oligomeric silicates barrier materials for packaging
KR101184782B1 (ko) * 2008-02-15 2012-09-20 쇼와 덴코 가부시키가이샤 전극의 표면 처리 방법 및 전극 및 유기 전계 발광 소자의 제조 방법
JP5374432B2 (ja) 2010-03-31 2013-12-25 パナソニック株式会社 電子デバイスおよびその製造方法
US9953989B2 (en) * 2014-03-31 2018-04-24 Taiwan Semiconductor Manufacturing Company Limited and National Taiwan University Antifuse array and method of forming antifuse using anodic oxidation
US9528194B2 (en) 2014-03-31 2016-12-27 Taiwan Semiconductor Manufacturing Company Limited & National Taiwan University Systems and methods for forming nanowires using anodic oxidation
WO2025063944A1 (en) * 2023-09-19 2025-03-27 Julia Jean, Llc Cold cathode electron sources and methods of production

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Also Published As

Publication number Publication date
KR20000035507A (ko) 2000-06-26
CN1254173A (zh) 2000-05-24
US6285118B1 (en) 2001-09-04
EP1793404A2 (de) 2007-06-06
SG86360A1 (en) 2002-02-19
ES2281158T3 (es) 2007-09-16
EP1003195A2 (de) 2000-05-24
ATE519216T1 (de) 2011-08-15
EP1793404B1 (de) 2011-08-03
CN1282210C (zh) 2006-10-25
DE69934958T2 (de) 2007-10-25
DK1003195T3 (da) 2007-05-21
DK1793404T3 (da) 2011-10-10
EP1003195A3 (de) 2000-12-20
EP1793404A3 (de) 2008-11-05
EP1003195B1 (de) 2007-01-24
TW436837B (en) 2001-05-28
DE69934958D1 (de) 2007-03-15
KR100596189B1 (ko) 2006-07-05

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