JPS6489461A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS6489461A JPS6489461A JP24406387A JP24406387A JPS6489461A JP S6489461 A JPS6489461 A JP S6489461A JP 24406387 A JP24406387 A JP 24406387A JP 24406387 A JP24406387 A JP 24406387A JP S6489461 A JPS6489461 A JP S6489461A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- impurity concentration
- metal film
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 5
- 239000012535 impurity Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 150000002500 ions Chemical class 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 239000007769 metal material Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Abstract
PURPOSE:To keep the low value of a substrate current ISUB under the state an electric field is gentle in the vicinity of an interface between a low impurity concentration region and an insulating film even if a device is used for a long time, by selectively growing a metal material to be struck on a part on a low impurity concentration layer in order to reduce the resistance of a gate electrode. CONSTITUTION:After polycrystalline Si film 24 is etched in a previous step, e.g., As ions are implanted into the entire surface. A low impurity concentration layer 26 is formed in a substrate 21. After resist 25 is removed, e.g., a W metal film 27 is deposited on the entire surface. Then, e.g., a resist film 28 is applied on the entire surface of a resist insulating film 28. Thereafter, the insulating film 28 is made to remain on the side wall part of the Si film 24 by RIE. With the insulating film 28 as a mask, the thin W metal film 27 is etched. Then, the insulating film 28 is removed. Under the state the pressure of WF6 gas and H2 gas is reduced, a W metal film 29 is formed only on the Si film 24 and the W metal film 27 by a CVD method. With the Si film 24 and the W metal film 27 and 29 as masks, e.g., As ions are implanted into the substrate, and a high impurity concentration layer 30 is formed. Thereafter, thermal oxidation is performed in an oxidizing atmosphere, and the intended MOSFET is completed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24406387A JPS6489461A (en) | 1987-09-30 | 1987-09-30 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24406387A JPS6489461A (en) | 1987-09-30 | 1987-09-30 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6489461A true JPS6489461A (en) | 1989-04-03 |
Family
ID=17113180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24406387A Pending JPS6489461A (en) | 1987-09-30 | 1987-09-30 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6489461A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5241203A (en) * | 1991-07-10 | 1993-08-31 | International Business Machines Corporation | Inverse T-gate FET transistor with lightly doped source and drain region |
| US5426327A (en) * | 1990-10-05 | 1995-06-20 | Nippon Steel Corporation | MOS semiconductor with LDD structure having gate electrode and side spacers of polysilicon with different impurity concentrations |
-
1987
- 1987-09-30 JP JP24406387A patent/JPS6489461A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5426327A (en) * | 1990-10-05 | 1995-06-20 | Nippon Steel Corporation | MOS semiconductor with LDD structure having gate electrode and side spacers of polysilicon with different impurity concentrations |
| US5241203A (en) * | 1991-07-10 | 1993-08-31 | International Business Machines Corporation | Inverse T-gate FET transistor with lightly doped source and drain region |
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