ATE524825T1 - Plasmaverarbeitungseinrichtung und verfahren zu ihrer reinigung - Google Patents

Plasmaverarbeitungseinrichtung und verfahren zu ihrer reinigung

Info

Publication number
ATE524825T1
ATE524825T1 AT02728065T AT02728065T ATE524825T1 AT E524825 T1 ATE524825 T1 AT E524825T1 AT 02728065 T AT02728065 T AT 02728065T AT 02728065 T AT02728065 T AT 02728065T AT E524825 T1 ATE524825 T1 AT E524825T1
Authority
AT
Austria
Prior art keywords
cleaning
bottom electrode
electrode
cut
frequency power
Prior art date
Application number
AT02728065T
Other languages
English (en)
Inventor
Yoichiro Numasawa
Yoshimi Watabe
Original Assignee
Canon Anelva Corp
Sanyo Electric Co
Renesas Electronics Corp
Panasonic Corp
Ulvac Inc
Hitachi Int Electric Inc
Tokyo Electron Ltd
Kanto Denka Kogyo Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp, Sanyo Electric Co, Renesas Electronics Corp, Panasonic Corp, Ulvac Inc, Hitachi Int Electric Inc, Tokyo Electron Ltd, Kanto Denka Kogyo Kk filed Critical Canon Anelva Corp
Application granted granted Critical
Publication of ATE524825T1 publication Critical patent/ATE524825T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AT02728065T 2001-05-17 2002-05-16 Plasmaverarbeitungseinrichtung und verfahren zu ihrer reinigung ATE524825T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001148327A JP2002343787A (ja) 2001-05-17 2001-05-17 プラズマ処理装置およびそのクリーニング方法
PCT/JP2002/004740 WO2002093632A1 (en) 2001-05-17 2002-05-16 Plasma processing device, and method of cleaning the same

Publications (1)

Publication Number Publication Date
ATE524825T1 true ATE524825T1 (de) 2011-09-15

Family

ID=18993662

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02728065T ATE524825T1 (de) 2001-05-17 2002-05-16 Plasmaverarbeitungseinrichtung und verfahren zu ihrer reinigung

Country Status (5)

Country Link
US (2) US7530359B2 (de)
EP (1) EP1401014B1 (de)
JP (1) JP2002343787A (de)
AT (1) ATE524825T1 (de)
WO (1) WO2002093632A1 (de)

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US8698006B2 (en) * 2009-06-04 2014-04-15 Morgan Advanced Ceramics, Inc. Co-fired metal and ceramic composite feedthrough assemblies for use at least in implantable medical devices and methods for making the same
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US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
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US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
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CN107154332B (zh) * 2016-03-03 2019-07-19 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及方法
CN107305832A (zh) * 2016-04-25 2017-10-31 中微半导体设备(上海)有限公司 一种半导体处理装置及处理基片的方法
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CN108580445A (zh) * 2018-06-29 2018-09-28 东莞塔菲尔新能源科技有限公司 一种动力电池顶盖的清洗装置及清洗方法
KR102312330B1 (ko) * 2018-09-18 2021-10-13 주식회사 테스 기판지지유닛
CN113196451A (zh) 2018-10-19 2021-07-30 朗姆研究公司 用于半导体处理的室部件的原位保护性涂层
KR102636428B1 (ko) * 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
KR102828798B1 (ko) 2018-12-05 2025-07-02 램 리써치 코포레이션 보이드 프리 (void free) 저응력 (low stress) 충진
JP7101628B2 (ja) * 2019-02-04 2022-07-15 東京エレクトロン株式会社 プラズマ処理装置および電極構造体
KR20210117343A (ko) 2019-02-13 2021-09-28 램 리써치 코포레이션 억제 제어를 사용한 텅스텐 피처 충진
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Also Published As

Publication number Publication date
US7530359B2 (en) 2009-05-12
JP2002343787A (ja) 2002-11-29
WO2002093632A1 (en) 2002-11-21
EP1401014A1 (de) 2004-03-24
US8002947B2 (en) 2011-08-23
EP1401014A4 (de) 2010-08-04
EP1401014B1 (de) 2011-09-14
US20040149386A1 (en) 2004-08-05
US20090095217A1 (en) 2009-04-16

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