ATE524826T1 - Verfahren zum herstellen von oxidschichten auf siliciumcarbidschichten unter verwendung von atomischem sauerstoff - Google Patents

Verfahren zum herstellen von oxidschichten auf siliciumcarbidschichten unter verwendung von atomischem sauerstoff

Info

Publication number
ATE524826T1
ATE524826T1 AT06800059T AT06800059T ATE524826T1 AT E524826 T1 ATE524826 T1 AT E524826T1 AT 06800059 T AT06800059 T AT 06800059T AT 06800059 T AT06800059 T AT 06800059T AT E524826 T1 ATE524826 T1 AT E524826T1
Authority
AT
Austria
Prior art keywords
oxide
silicon carbide
layers
chamber
layer
Prior art date
Application number
AT06800059T
Other languages
English (en)
Inventor
Mrinal Das
Anant Agarwal
John Palmour
Dave Grider
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE524826T1 publication Critical patent/ATE524826T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01366—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the semiconductor being silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Formation Of Insulating Films (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Ceramic Products (AREA)
AT06800059T 2005-09-16 2006-07-11 Verfahren zum herstellen von oxidschichten auf siliciumcarbidschichten unter verwendung von atomischem sauerstoff ATE524826T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/229,476 US7572741B2 (en) 2005-09-16 2005-09-16 Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
PCT/US2006/027198 WO2007040709A1 (en) 2005-09-16 2006-07-11 Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen

Publications (1)

Publication Number Publication Date
ATE524826T1 true ATE524826T1 (de) 2011-09-15

Family

ID=37398849

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06800059T ATE524826T1 (de) 2005-09-16 2006-07-11 Verfahren zum herstellen von oxidschichten auf siliciumcarbidschichten unter verwendung von atomischem sauerstoff

Country Status (7)

Country Link
US (2) US7572741B2 (de)
EP (2) EP1935011B1 (de)
JP (1) JP4745396B2 (de)
CN (1) CN101263586A (de)
AT (1) ATE524826T1 (de)
TW (1) TW200713453A (de)
WO (1) WO2007040709A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101245899B1 (ko) * 2006-01-30 2013-03-20 스미토모덴키고교가부시키가이샤 탄화규소 반도체 장치의 제조 방법
DE102007005780A1 (de) * 2006-08-10 2008-02-14 Carl Zeiss Smt Ag Verbundstruktur für die Mikrolithographie und optische Anordnung
JP5283147B2 (ja) * 2006-12-08 2013-09-04 国立大学法人東北大学 半導体装置および半導体装置の製造方法
JP2012004270A (ja) * 2010-06-16 2012-01-05 Sumitomo Electric Ind Ltd 炭化珪素半導体の洗浄方法、炭化珪素半導体および炭化珪素半導体装置
JP5540919B2 (ja) * 2010-06-16 2014-07-02 住友電気工業株式会社 炭化珪素半導体の洗浄方法
JP5605005B2 (ja) * 2010-06-16 2014-10-15 住友電気工業株式会社 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置
US9287353B2 (en) * 2010-11-30 2016-03-15 Kyocera Corporation Composite substrate and method of manufacturing the same
JP5659882B2 (ja) * 2011-03-09 2015-01-28 住友電気工業株式会社 半導体装置の製造方法
JP2015142034A (ja) * 2014-01-29 2015-08-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR102427555B1 (ko) * 2017-01-17 2022-08-01 젯트에프 프리드리히스하펜 아게 규소 탄화물 상에 절연 층을 제조하는 방법

Family Cites Families (105)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4560409A (en) 1984-08-29 1985-12-24 Superior Graphite Metal bearing graphitic carbons
US4810532A (en) 1985-06-24 1989-03-07 Lockheed Missiles & Space Company, Inc. Boron-silicon-hydrogen alloy films
US4692388A (en) 1985-06-24 1987-09-08 Lockheed Missiles & Space Company, Inc. Laminated article
US4818625A (en) 1985-06-24 1989-04-04 Lockheed Missiles & Space Company, Inc. Boron-silicon-hydrogen alloy films
US4778726A (en) 1985-06-24 1988-10-18 Lockheed Missiles & Space Company, Inc. Boron-silicon-hydrogen alloy films
US4689104A (en) 1985-06-24 1987-08-25 Lockheed Missiles & Space Company, Inc. Method of bonding two substrate faces utilizing boron-silicon-hydrogen alloy films
US4806431A (en) 1985-06-24 1989-02-21 Lockheed Missiles & Space Company, Inc. Composites coated with boron-silicon-oxide films
US4894511A (en) 1986-08-26 1990-01-16 Physical Sciences, Inc. Source of high flux energetic atoms
US5682594A (en) 1987-06-12 1997-10-28 Lanxide Technology Company, Lp Composite materials and methods for making the same
US5585165A (en) 1987-06-12 1996-12-17 Lanxide Technology Company, Lp Composite materials and methods for making the same
US4910436A (en) 1988-02-12 1990-03-20 Applied Electron Corporation Wide area VUV lamp with grids and purging jets
US5041361A (en) 1988-08-08 1991-08-20 Midwest Research Institute Oxygen ion-beam microlithography
US5741596A (en) 1989-02-21 1998-04-21 Boeing North American, Inc. Coating for oxidation protection of metal surfaces
JP2786283B2 (ja) * 1989-12-22 1998-08-13 株式会社日立製作所 表面改質方法およびその装置並びに表面改質基材
FR2671798B1 (fr) 1991-01-21 1994-03-25 Propulsion Ste Europeenne Procede pour la protection anti-oxydation d'un materiau qui, au moins en surface, est constitue d'une ceramique formee par un compose du silicium, et materiau tel qu'obtenu par le procede.
US5259885A (en) 1991-04-03 1993-11-09 American Superconductor Corporation Process for making ceramic/metal and ceramic/ceramic laminates by oxidation of a metal precursor
US5360635A (en) 1992-01-02 1994-11-01 Air Products And Chemicals, Inc. Method for manufacturing inorganic membranes by organometallic chemical vapor deposition
US5427823A (en) 1993-08-31 1995-06-27 American Research Corporation Of Virginia Laser densification of glass ceramic coatings on carbon-carbon composite materials
US5807441A (en) 1993-11-02 1998-09-15 Sumitomo Metal Industries, Ltd. Method of manufacturing a silicon steel sheet having improved magnetic characteristics
FR2712429B1 (fr) 1993-11-12 1996-01-26 Michel Jean Robert Lagues Materiau supraconducteur constitue de couches monomoleculaires superposees
TW293130B (de) 1994-03-10 1996-12-11 Mitsubishi Electric Corp
US5443863A (en) 1994-03-16 1995-08-22 Auburn University Low-temperature oxidation at surfaces using ozone decomposition products formed by microwave discharge
US5415756A (en) 1994-03-28 1995-05-16 University Of Houston Ion assisted deposition process including reactive source gassification
US5673106A (en) 1994-06-17 1997-09-30 Texas Instruments Incorporated Printing system with self-monitoring and adjustment
US5828080A (en) 1994-08-17 1998-10-27 Tdk Corporation Oxide thin film, electronic device substrate and electronic device
US5670798A (en) 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
US5679965A (en) 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
US6228453B1 (en) 1995-06-07 2001-05-08 Lanxide Technology Company, Lp Composite materials comprising two jonal functions and methods for making the same
US5753934A (en) 1995-08-04 1998-05-19 Tok Corporation Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film
JP3137880B2 (ja) 1995-08-25 2001-02-26 ティーディーケイ株式会社 強誘電体薄膜、電子デバイスおよび強誘電体薄膜の製造方法
US5766789A (en) 1995-09-29 1998-06-16 Energetics Systems Corporation Electrical energy devices
JP3193302B2 (ja) 1996-06-26 2001-07-30 ティーディーケイ株式会社 膜構造体、電子デバイス、記録媒体および強誘電体薄膜の製造方法
JP3472087B2 (ja) 1997-06-30 2003-12-02 Ｔｄｋ株式会社 膜構造体、電子デバイス、記録媒体および酸化物導電性薄膜の製造方法
US6534754B2 (en) 1997-08-14 2003-03-18 Westinghouse Savannah River Company, L.L.C. Microwave off-gas treatment apparatus and process
US6340824B1 (en) 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
US6194036B1 (en) 1997-10-20 2001-02-27 The Regents Of The University Of California Deposition of coatings using an atmospheric pressure plasma jet
US6551939B2 (en) 1998-03-17 2003-04-22 Anneal Corporation Plasma surface treatment method and resulting device
US6149829A (en) 1998-03-17 2000-11-21 James W. Mitzel Plasma surface treatment method and resulting device
US6509283B1 (en) * 1998-05-13 2003-01-21 National Semiconductor Corporation Thermal oxidation method utilizing atomic oxygen to reduce dangling bonds in silicon dioxide grown on silicon
US6082375A (en) 1998-05-21 2000-07-04 Micron Technology, Inc. Method of processing internal surfaces of a chemical vapor deposition reactor
JP4450919B2 (ja) 1999-02-09 2010-04-14 日本碍子株式会社 炭素繊維複合材料
JP4199423B2 (ja) 1999-03-26 2008-12-17 ペンゾイル−クエーカー ステイト カンパニー 磁気記録媒体およびその製造方法、並びに該磁気記録媒体を使用したデータ記録／取出し装置およびコンピュータ
US7195828B2 (en) 1999-03-26 2007-03-27 Shell Oil Company Lubricant for magnetic recording medium and use thereof
US6450116B1 (en) * 1999-04-22 2002-09-17 Applied Materials, Inc. Apparatus for exposing a substrate to plasma radicals
KR20020028047A (ko) 1999-05-03 2002-04-15 맥켈러 로버트 루이스 실리콘 카바이드 제거 방법
US6248618B1 (en) 1999-10-12 2001-06-19 Chartered Semiconductor Manufacturing Ltd. Method of fabrication of dual gate oxides for CMOS devices
US6541367B1 (en) 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
KR100482241B1 (ko) * 2000-02-25 2005-04-13 샤프 가부시키가이샤 카본 나노튜브 및 그 제조 방법, 전자원 및 그 제조 방법및 표시 장치
US6939756B1 (en) * 2000-03-24 2005-09-06 Vanderbilt University Inclusion of nitrogen at the silicon dioxide-silicon carbide interace for passivation of interface defects
US6657385B2 (en) 2000-06-20 2003-12-02 Burle Technologies, Inc. Diamond transmission dynode and photomultiplier or imaging device using same
ES2164029B1 (es) 2000-07-07 2003-05-16 Fico Mirrors Sa Dispositivo electrocromico y aplicaciones correspondientes.
JP2002087896A (ja) 2000-09-12 2002-03-27 Mitsubishi Heavy Ind Ltd 自己修復性高耐熱耐酸化性皮膜及び積層体
TWI313059B (de) 2000-12-08 2009-08-01 Sony Corporatio
US6538274B2 (en) 2000-12-20 2003-03-25 Micron Technology, Inc. Reduction of damage in semiconductor container capacitors
US6703324B2 (en) 2000-12-21 2004-03-09 Intel Corporation Mechanically reinforced highly porous low dielectric constant films
US20040055539A1 (en) 2002-09-13 2004-03-25 Dielectric Systems, Inc. Reactive-reactor for generation of gaseous intermediates
US20030196680A1 (en) 2002-04-19 2003-10-23 Dielectric Systems, Inc Process modules for transport polymerization of low epsilon thin films
US20040255862A1 (en) 2001-02-26 2004-12-23 Lee Chung J. Reactor for producing reactive intermediates for low dielectric constant polymer thin films
US6566242B1 (en) 2001-03-23 2003-05-20 International Business Machines Corporation Dual damascene copper interconnect to a damascene tungsten wiring level
US6855584B2 (en) 2001-03-29 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7253032B2 (en) 2001-04-20 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Method of flattening a crystallized semiconductor film surface by using a plate
JP5025057B2 (ja) 2001-05-10 2012-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6897477B2 (en) 2001-06-01 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device
TW544938B (en) 2001-06-01 2003-08-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US6743700B2 (en) 2001-06-01 2004-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device and method of their production
US20020179921A1 (en) 2001-06-02 2002-12-05 Cohn Michael B. Compliant hermetic package
US20040023253A1 (en) 2001-06-11 2004-02-05 Sandeep Kunwar Device structure for closely spaced electrodes
US6613697B1 (en) 2001-06-26 2003-09-02 Special Materials Research And Technology, Inc. Low metallic impurity SiO based thin film dielectrics on semiconductor substrates using a room temperature wet chemical growth process, method and applications thereof
US6559068B2 (en) 2001-06-28 2003-05-06 Koninklijke Philips Electronics N.V. Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor
US7199027B2 (en) 2001-07-10 2007-04-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor film by plasma CVD using a noble gas and nitrogen
US6566210B2 (en) 2001-07-13 2003-05-20 International Business Machines Corporation Method of improving gate activation by employing atomic oxygen enhanced oxidation
TW558743B (en) 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
US7476925B2 (en) 2001-08-30 2009-01-13 Micron Technology, Inc. Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interploy insulators
US6844523B2 (en) 2001-09-07 2005-01-18 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser irradiation method, manufacturing method for a semiconductor device, semiconductor device and electronic equipment
US7589032B2 (en) 2001-09-10 2009-09-15 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment
JP3798674B2 (ja) 2001-10-29 2006-07-19 大日本スクリーン製造株式会社 熱処理装置および熱処理方法
CN101058713B (zh) * 2001-10-31 2011-02-09 日立化成工业株式会社 研磨液及研磨方法
JP2003142579A (ja) 2001-11-07 2003-05-16 Hitachi Ltd 半導体装置の製造方法および半導体装置
ATE509272T1 (de) 2001-11-09 2011-05-15 3Dbiosurfaces Technologies Llc Substrate mit hochliegendem oberflächenbereich für mikroarrays sowie verfahren zur herstellung davon
JP4275336B2 (ja) 2001-11-16 2009-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2003047000A1 (en) 2001-11-30 2003-06-05 Matsushita Electric Industrial Co., Ltd. Semiconductor device and production method therefor
US6849825B2 (en) 2001-11-30 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US7214573B2 (en) 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
SG114589A1 (en) 2001-12-12 2005-09-28 Semiconductor Energy Lab Film formation apparatus and film formation method and cleaning method
JP2003188254A (ja) 2001-12-18 2003-07-04 Hitachi Ltd 半導体装置の製造方法および半導体装置
US7326673B2 (en) 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
US6787229B1 (en) 2002-01-08 2004-09-07 University Of Central Florida Three-dimensional carbon fibers and method and apparatus for their production
TWI272666B (en) 2002-01-28 2007-02-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6846754B2 (en) 2002-02-22 2005-01-25 Showa Denko Kabushiki Kaisha Boron phosphide-based semiconductor layer and vapor phase growth method thereof
JP3968566B2 (ja) 2002-03-26 2007-08-29 日立電線株式会社 窒化物半導体結晶の製造方法及び窒化物半導体ウエハ並びに窒化物半導体デバイス
JP2003288766A (ja) 2002-03-28 2003-10-10 Kyocera Corp 磁気ディスク基板用保持部材及びその製造方法
JP3950959B2 (ja) 2002-06-28 2007-08-01 独立行政法人産業技術総合研究所 半導体装置の製造方法
JP4546055B2 (ja) 2002-09-24 2010-09-15 キヤノン株式会社 クリーニングブラシのブラシ密度と静電像の１画素面積の設定方法
US20040077156A1 (en) 2002-10-18 2004-04-22 Loucas Tsakalakos Methods of defect reduction in wide bandgap thin films using nanolithography
AU2003288999A1 (en) 2002-12-19 2004-07-14 Semiconductor Energy Laboratory Co., Ltd. Display unit and method of fabricating display unit
US6922769B2 (en) 2002-12-23 2005-07-26 Intel Corporation Apparatus and method for reduction of power consumption in OS that use flat segmentation memory model
US7273638B2 (en) * 2003-01-07 2007-09-25 International Business Machines Corp. High density plasma oxidation
JP2004296963A (ja) 2003-03-28 2004-10-21 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
US6872909B2 (en) 2003-04-16 2005-03-29 Applied Science And Technology, Inc. Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel
SG142140A1 (en) 2003-06-27 2008-05-28 Semiconductor Energy Lab Display device and method of manufacturing thereof
US20050048706A1 (en) * 2003-08-27 2005-03-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US6982196B2 (en) * 2003-11-04 2006-01-03 International Business Machines Corporation Oxidation method for altering a film structure and CMOS transistor structure formed therewith
TWI239203B (en) 2004-02-13 2005-09-01 Avision Inc Sheet-fed scanner capable of scanning multiple scan lines as an image signal calibration standard
DE102004008499B4 (de) 2004-02-20 2008-05-08 Infineon Technologies Ag Verfahren zum Emulieren einer integrierten Schaltung und Halbleiterchip

Also Published As

Publication number Publication date
EP2259290B1 (de) 2020-03-11
US20090004883A1 (en) 2009-01-01
JP2009509333A (ja) 2009-03-05
EP2259290A3 (de) 2011-01-05
EP2259290A2 (de) 2010-12-08
EP1935011A1 (de) 2008-06-25
US8119539B2 (en) 2012-02-21
WO2007040709A1 (en) 2007-04-12
JP4745396B2 (ja) 2011-08-10
EP1935011B1 (de) 2011-09-14
US7572741B2 (en) 2009-08-11
US20100009545A1 (en) 2010-01-14
TW200713453A (en) 2007-04-01
CN101263586A (zh) 2008-09-10

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