ATE525755T1 - Lichtemittierendes bauelement und verfahren zu seiner herstellung - Google Patents

Lichtemittierendes bauelement und verfahren zu seiner herstellung

Info

Publication number
ATE525755T1
ATE525755T1 AT02801546T AT02801546T ATE525755T1 AT E525755 T1 ATE525755 T1 AT E525755T1 AT 02801546 T AT02801546 T AT 02801546T AT 02801546 T AT02801546 T AT 02801546T AT E525755 T1 ATE525755 T1 AT E525755T1
Authority
AT
Austria
Prior art keywords
light emitting
light
emitting device
coating layers
production
Prior art date
Application number
AT02801546T
Other languages
English (en)
Inventor
Kunihiro Izuno
Kouki Matsumoto
Shinichi Nagahama
Masahiko Sano
Tomoya Yanamoto
Keiji Sakamoto
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Application granted granted Critical
Publication of ATE525755T1 publication Critical patent/ATE525755T1/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/824Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19Preparing inhomogeneous wafers
    • H10P90/1904Preparing vertically inhomogeneous wafers
    • H10P90/1906Preparing SOI wafers
    • H10P90/1914Preparing SOI wafers using bonding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • H10W10/181Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/015Manufacture or treatment of bond wires
    • H10W72/01515Forming coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07551Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/352Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/353Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/926Multiple bond pads having different sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
  • Led Devices (AREA)
AT02801546T 2001-10-12 2002-10-11 Lichtemittierendes bauelement und verfahren zu seiner herstellung ATE525755T1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001315391 2001-10-12
JP2001338462 2001-11-02
JP2002019191 2002-01-28
JP2002198761 2002-07-08
PCT/JP2002/010587 WO2003034508A1 (fr) 2001-10-12 2002-10-11 Dispositif d'emission de lumiere et procede de fabrication de celui-ci

Publications (1)

Publication Number Publication Date
ATE525755T1 true ATE525755T1 (de) 2011-10-15

Family

ID=27482616

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02801546T ATE525755T1 (de) 2001-10-12 2002-10-11 Lichtemittierendes bauelement und verfahren zu seiner herstellung

Country Status (6)

Country Link
US (2) US7301175B2 (de)
EP (1) EP1437776B1 (de)
JP (2) JPWO2003034508A1 (de)
CN (1) CN1323441C (de)
AT (1) ATE525755T1 (de)
WO (1) WO2003034508A1 (de)

Families Citing this family (318)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1437776B1 (de) 2001-10-12 2011-09-21 Nichia Corporation Lichtemittierendes bauelement und verfahren zu seiner herstellung
KR101030068B1 (ko) * 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
CN103396933B (zh) 2003-02-26 2016-04-20 凯利达基因组股份有限公司 通过杂交进行的随机阵列dna分析
DE10308866A1 (de) * 2003-02-28 2004-09-09 Osram Opto Semiconductors Gmbh Beleuchtungsmodul und Verfahren zu dessen Herstellung
CN1759492B (zh) 2003-03-10 2010-04-28 丰田合成株式会社 固体元件装置的制造方法
US7095053B2 (en) * 2003-05-05 2006-08-22 Lamina Ceramics, Inc. Light emitting diodes packaged for high temperature operation
US6788541B1 (en) * 2003-05-07 2004-09-07 Bear Hsiung LED matrix moldule
JP4874510B2 (ja) * 2003-05-14 2012-02-15 日亜化学工業株式会社 発光装置及びその製造方法
JP4645071B2 (ja) * 2003-06-20 2011-03-09 日亜化学工業株式会社 パッケージ成型体およびそれを用いた半導体装置
JP4661032B2 (ja) * 2003-06-26 2011-03-30 日亜化学工業株式会社 発光装置及びその製造方法
US7075225B2 (en) 2003-06-27 2006-07-11 Tajul Arosh Baroky White light emitting device
US7391153B2 (en) * 2003-07-17 2008-06-24 Toyoda Gosei Co., Ltd. Light emitting device provided with a submount assembly for improved thermal dissipation
US20050019241A1 (en) * 2003-07-23 2005-01-27 Lyons Robert Joseph Preparation of rare earth ceramic garnet
WO2005022654A2 (en) 2003-08-28 2005-03-10 Matsushita Electric Industrial Co.,Ltd. Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
JP4093943B2 (ja) * 2003-09-30 2008-06-04 三洋電機株式会社 発光素子およびその製造方法
US7488432B2 (en) * 2003-10-28 2009-02-10 Nichia Corporation Fluorescent material and light-emitting device
US7704763B2 (en) 2003-12-09 2010-04-27 The Regents Of The University Of California Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface
JP2005191420A (ja) 2003-12-26 2005-07-14 Stanley Electric Co Ltd 波長変換層を有する半導体発光装置およびその製造方法
JP2005252222A (ja) * 2004-02-03 2005-09-15 Matsushita Electric Ind Co Ltd 半導体発光装置、照明モジュール、照明装置、表示素子、および半導体発光装置の製造方法
JP2005223165A (ja) 2004-02-06 2005-08-18 Sanyo Electric Co Ltd 窒化物系発光素子
US7592192B2 (en) 2004-03-05 2009-09-22 Konica Minolta Holdings, Inc. White light emitting diode (white LED) and method of manufacturing white LED
TWI287880B (en) 2004-03-18 2007-10-01 Showa Denko Kk Group III nitride semiconductor light-emitting device and method of producing the same
US20050227394A1 (en) * 2004-04-03 2005-10-13 Bor-Jen Wu Method for forming die protecting layer
KR100655894B1 (ko) * 2004-05-06 2006-12-08 서울옵토디바이스주식회사 색온도 및 연색성이 우수한 파장변환 발광장치
KR100658700B1 (ko) 2004-05-13 2006-12-15 서울옵토디바이스주식회사 Rgb 발광소자와 형광체를 조합한 발광장치
JP3994094B2 (ja) * 2004-05-27 2007-10-17 ローム株式会社 発光ダイオードランプ
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US8318044B2 (en) * 2004-06-10 2012-11-27 Seoul Semiconductor Co., Ltd. Light emitting device
KR100665298B1 (ko) * 2004-06-10 2007-01-04 서울반도체 주식회사 발광장치
KR100665299B1 (ko) * 2004-06-10 2007-01-04 서울반도체 주식회사 발광물질
JP4359195B2 (ja) * 2004-06-11 2009-11-04 株式会社東芝 半導体発光装置及びその製造方法並びに半導体発光ユニット
JP4525193B2 (ja) * 2004-06-15 2010-08-18 パナソニック株式会社 光半導体素子用パッケージとそれを用いた発光装置
KR20070034005A (ko) * 2004-06-23 2007-03-27 로무 가부시키가이샤 백색 발광 소자 및 그 제조 방법
US7801199B2 (en) * 2004-06-25 2010-09-21 Finisar Corporation Vertical cavity surface emitting laser with photodiode having reduced spontaneous emissions
US7746911B2 (en) * 2004-06-25 2010-06-29 Finisar Corporation Geometric optimizations for reducing spontaneous emissions in photodiodes
JP4521227B2 (ja) * 2004-07-14 2010-08-11 株式会社東芝 窒素を含有する蛍光体の製造方法
JP4254669B2 (ja) * 2004-09-07 2009-04-15 豊田合成株式会社 発光装置
JP2006086469A (ja) * 2004-09-17 2006-03-30 Matsushita Electric Ind Co Ltd 半導体発光装置、照明モジュール、照明装置及び半導体発光装置の製造方法
DE102004047727B4 (de) * 2004-09-30 2018-01-18 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit einer Konverterschicht und Verfahren zur Herstellung eines Lumineszenzdiodenchips mit einer Konverterschicht
KR100674831B1 (ko) * 2004-11-05 2007-01-25 삼성전기주식회사 백색 발광 다이오드 패키지 및 그 제조방법
JP2006156837A (ja) * 2004-11-30 2006-06-15 Matsushita Electric Ind Co Ltd 半導体発光装置、発光モジュール、および照明装置
CN100416871C (zh) * 2004-12-09 2008-09-03 璨圆光电股份有限公司 发光二极管封装结构
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
US7413918B2 (en) * 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode
US8680534B2 (en) * 2005-01-11 2014-03-25 Semileds Corporation Vertical light emitting diodes (LED) having metal substrate and spin coated phosphor layer for producing white light
US7731395B2 (en) * 2005-01-26 2010-06-08 Anthony International Linear lenses for LEDs
CN100428512C (zh) 2005-01-31 2008-10-22 东芝照明技术株式会社 发光二极管装置
FR2883100B1 (fr) * 2005-02-14 2011-01-21 Futaba Denshi Kogyo Kk Materiau de revetement de puce de circuit integre et dispositif d'affichage par fluorescence utilisant celui-ci
CN100559545C (zh) * 2005-02-14 2009-11-11 双叶电子工业株式会社 Ic芯片涂覆材料及使用该材料的真空荧光显示装置
JP2006245020A (ja) * 2005-02-28 2006-09-14 Sharp Corp 発光ダイオード素子とその製造方法
CN100585268C (zh) * 2005-03-07 2010-01-27 日亚化学工业株式会社 面状照射光源及面状照射装置
JP4744178B2 (ja) * 2005-04-08 2011-08-10 シャープ株式会社 発光ダイオード
US7425083B2 (en) * 2005-05-02 2008-09-16 Samsung Electro-Mechanics Co., Ltd. Light emitting device package
WO2007002244A2 (en) * 2005-06-22 2007-01-04 Solid State Devices, Inc. High temperature packaging for electronic components, modules and assemblies
DE102005038698A1 (de) * 2005-07-08 2007-01-18 Tridonic Optoelectronics Gmbh Optoelektronische Bauelemente mit Haftvermittler
DE102005034166A1 (de) * 2005-07-21 2007-02-01 Osram Opto Semiconductors Gmbh Gehäuse für ein elektromagnetische Strahlung emittierendes optoelektronisches Bauelement, elektromagnetische Strahlung emittierendes Bauelement und Verfahren zum Herstellen eines Gehäuses oder eines Bauelements
US20070040182A1 (en) * 2005-08-16 2007-02-22 Julian Lee Light emitting diode packaging structure
KR101097927B1 (ko) * 2005-08-18 2011-12-23 재단법인서울대학교산학협력재단 액정 표시장치 제조 방법
DE102005041064B4 (de) * 2005-08-30 2023-01-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zu dessen Herstellung
JP4971672B2 (ja) * 2005-09-09 2012-07-11 パナソニック株式会社 発光装置
JP2007096090A (ja) * 2005-09-29 2007-04-12 Sanyo Electric Co Ltd 半導体発光素子及び半導体発光素子の製造方法
DE102005059524A1 (de) * 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Gehäuse für ein elektromagnetische Strahlung emittierendes optoelektronisches Bauelement, Bauelement und Verfahren zum Herstellen eines Gehäuses oder eines Bauelements
DE102006004397A1 (de) * 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
KR101241650B1 (ko) * 2005-10-19 2013-03-08 엘지이노텍 주식회사 엘이디 패키지
TW200717856A (en) * 2005-10-28 2007-05-01 Taiwan Oasis Technology Co Ltd Method of fabricating light emitting diode
US7470935B2 (en) * 2005-11-07 2008-12-30 Taiwan Oasis Technology Co., Ltd. LED packaging
JP5016808B2 (ja) * 2005-11-08 2012-09-05 ローム株式会社 窒化物半導体発光素子及び窒化物半導体発光素子製造方法
WO2007054847A2 (en) * 2005-11-09 2007-05-18 Koninklijke Philips Electronics N.V. Method of manufacturing a package carrier for enclosing at least one microelectronic element and method of manufacturing a diagnostic device
KR101258397B1 (ko) * 2005-11-11 2013-04-30 서울반도체 주식회사 구리 알칼리토 실리케이트 혼성 결정 형광체
US20070128745A1 (en) * 2005-12-01 2007-06-07 Brukilacchio Thomas J Phosphor deposition method and apparatus for making light emitting diodes
KR101055772B1 (ko) * 2005-12-15 2011-08-11 서울반도체 주식회사 발광장치
WO2007081719A2 (en) 2006-01-05 2007-07-19 Illumitex, Inc. Separate optical device for directing light from an led
KR100723247B1 (ko) 2006-01-10 2007-05-29 삼성전기주식회사 칩코팅형 led 패키지 및 그 제조방법
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
US8908740B2 (en) * 2006-02-14 2014-12-09 Nichia Corporation Light emitting device
JP2007220972A (ja) * 2006-02-17 2007-08-30 Showa Denko Kk 半導体発光素子及びその製造方法、並びにランプ
JP2007230877A (ja) * 2006-02-27 2007-09-13 Keio Gijuku 発光標識試薬
US7675145B2 (en) * 2006-03-28 2010-03-09 Cree Hong Kong Limited Apparatus, system and method for use in mounting electronic elements
KR100875443B1 (ko) * 2006-03-31 2008-12-23 서울반도체 주식회사 발광 장치
JP2007300069A (ja) * 2006-04-04 2007-11-15 Toyoda Gosei Co Ltd 発光素子、この発光素子を用いた発光装置及びこの発光素子の製造方法
JP2007287757A (ja) 2006-04-12 2007-11-01 Rohm Co Ltd 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法
US8748915B2 (en) * 2006-04-24 2014-06-10 Cree Hong Kong Limited Emitter package with angled or vertical LED
TWI314366B (en) * 2006-04-28 2009-09-01 Delta Electronics Inc Light emitting apparatus
WO2007125493A2 (en) * 2006-05-02 2007-11-08 Koninklijke Philips Electronics N.V. Color-stable phosphor converted led
US7755282B2 (en) * 2006-05-12 2010-07-13 Edison Opto Corporation LED structure and fabricating method for the same
JP2007311401A (ja) * 2006-05-16 2007-11-29 Idec Corp Led発光デバイス及びその製造方法
JP2007308537A (ja) * 2006-05-16 2007-11-29 Sony Corp 発光組成物、光源装置、及び表示装置
KR20140146210A (ko) * 2006-06-02 2014-12-24 히타치가세이가부시끼가이샤 광반도체소자 탑재용 패키지 및 이것을 이용한 광반도체장치
WO2007140651A1 (en) * 2006-06-08 2007-12-13 Hong-Yuan Technology Co., Ltd Light emitting system, light emitting apparatus and forming method thereof
TWI297537B (en) * 2006-06-26 2008-06-01 Univ Nat Cheng Kung Embedded metal heat sink for semiconductor device and method for manufacturing the same
TWI307915B (en) * 2006-06-26 2009-03-21 Univ Nat Cheng Kung Method for manufacturing heat sink of semiconductor device
TWM307194U (en) * 2006-06-29 2007-03-01 Shr-Fu Huang Structure of light emitting diode (LED)
KR101258229B1 (ko) * 2006-06-30 2013-04-25 서울반도체 주식회사 발광 소자
US20080026505A1 (en) * 2006-07-28 2008-01-31 Nirupama Chakrapani Electronic packages with roughened wetting and non-wetting zones
US8735920B2 (en) 2006-07-31 2014-05-27 Cree, Inc. Light emitting diode package with optical element
JP2010500747A (ja) * 2006-08-08 2010-01-07 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ナノ粒子をベースとする無機結合材料
TWM317075U (en) * 2006-08-25 2007-08-11 Yun Dai Heat dissipation structure of light emitting diode
KR101258227B1 (ko) 2006-08-29 2013-04-25 서울반도체 주식회사 발광 소자
JP2008060344A (ja) * 2006-08-31 2008-03-13 Toshiba Corp 半導体発光装置
DE102006046678A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Gehäuse für ein optoelektronisches Bauelement, optoelektronisches Bauelement und Verfahren zum Herstellen eines Gehäuses für ein optoelektronisches Bauelement
US8087960B2 (en) 2006-10-02 2012-01-03 Illumitex, Inc. LED system and method
CN101523625B (zh) * 2006-10-12 2012-05-23 松下电器产业株式会社 发光装置及其制造方法
WO2008044769A1 (fr) * 2006-10-13 2008-04-17 Sanyo Electric Co., Ltd. Dispositif électroluminescent à semi-conducteur, système d'éclairage et procédé de fabrication de dispositif électroluminescent à semi-conducteur
JP2008108952A (ja) * 2006-10-26 2008-05-08 Matsushita Electric Ind Co Ltd 半導体発光装置および半導体発光装置の製造方法
JP4984824B2 (ja) * 2006-10-26 2012-07-25 豊田合成株式会社 発光装置
US8450148B2 (en) * 2006-12-14 2013-05-28 Infineon Technologies, Ag Molding compound adhesion for map-molded flip-chip
US7687823B2 (en) * 2006-12-26 2010-03-30 Nichia Corporation Light-emitting apparatus and method of producing the same
US9196799B2 (en) * 2007-01-22 2015-11-24 Cree, Inc. LED chips having fluorescent substrates with microholes and methods for fabricating
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9024349B2 (en) * 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US8232564B2 (en) * 2007-01-22 2012-07-31 Cree, Inc. Wafer level phosphor coating technique for warm light emitting diodes
US9711703B2 (en) 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US8604506B2 (en) * 2007-02-22 2013-12-10 Sharp Kabushiki Kaisha Surface mounting type light emitting diode and method for manufacturing the same
US8421088B2 (en) * 2007-02-22 2013-04-16 Sharp Kabushiki Kaisha Surface mounting type light emitting diode
US20090076850A1 (en) * 2007-03-14 2009-03-19 Hansell Douglas M System for electronic prescriptions
JP4290745B2 (ja) * 2007-03-16 2009-07-08 豊田合成株式会社 Iii−v族半導体素子の製造方法
DE102007015474A1 (de) * 2007-03-30 2008-10-02 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
US7759670B2 (en) * 2007-06-12 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
US8148733B2 (en) 2007-06-12 2012-04-03 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
US8546818B2 (en) 2007-06-12 2013-10-01 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current-guiding structure
WO2009025469A2 (en) 2007-08-22 2009-02-26 Seoul Semiconductor Co., Ltd. Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same
KR101055769B1 (ko) 2007-08-28 2011-08-11 서울반도체 주식회사 비화학양론적 정방정계 알칼리 토류 실리케이트 형광체를채택한 발광 장치
TWI396298B (zh) * 2007-08-29 2013-05-11 Everlight Electronics Co Ltd 發光半導體元件塗佈螢光粉的方法及其應用
DE102007041133A1 (de) * 2007-08-30 2009-03-05 Osram Opto Semiconductors Gmbh Gehäuse mit einem Gehäuseunterteil, sowie Verfahren zur Aussendung elektromagnetischer Strahlung
US7834365B2 (en) * 2007-09-12 2010-11-16 Harvatek Corporation LED chip package structure with high-efficiency light-emitting effect and method of packing the same
JP2009076749A (ja) * 2007-09-21 2009-04-09 Toyoda Gosei Co Ltd Led装置及びその製造方法
JP2009099893A (ja) * 2007-10-19 2009-05-07 Showa Denko Kk Iii族窒化物半導体発光素子
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US8866169B2 (en) * 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
JP5212777B2 (ja) * 2007-11-28 2013-06-19 スタンレー電気株式会社 半導体発光装置及び照明装置
TWI367579B (en) * 2007-12-10 2012-07-01 Harvatek Corp Led chip package structure with a high-efficiency light-emitting effect
TWI344227B (en) * 2007-12-12 2011-06-21 Harvatek Corp Led chip package structure generating a high-efficiency light-emitting effect via rough surfaces and method for manufacturing the same
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8167674B2 (en) * 2007-12-14 2012-05-01 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
CN101910872A (zh) * 2007-12-28 2010-12-08 住友电工超效能高分子股份有限公司 光学透镜
US8878219B2 (en) 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US8940561B2 (en) * 2008-01-15 2015-01-27 Cree, Inc. Systems and methods for application of optical materials to optical elements
US8058088B2 (en) 2008-01-15 2011-11-15 Cree, Inc. Phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating
WO2009096619A1 (en) * 2008-02-01 2009-08-06 Ytel Photonics Inc. Optical device package and method for manufacturing thereof
JP5315070B2 (ja) * 2008-02-07 2013-10-16 昭和電工株式会社 化合物半導体発光ダイオード
JP2009212501A (ja) * 2008-02-08 2009-09-17 Seiko Instruments Inc 発光デバイス及びその製造方法
JP2011512037A (ja) 2008-02-08 2011-04-14 イルミテックス, インコーポレイテッド エミッタ層成形のためのシステムおよび方法
TW200937674A (en) * 2008-02-22 2009-09-01 Harvatek Corp LED chip package structure with a multifunctional integrated chip and its packaging method
US7923746B2 (en) * 2008-03-12 2011-04-12 Industrial Technology Research Institute Light emitting diode package structure and method for fabricating the same
US8916890B2 (en) * 2008-03-19 2014-12-23 Cree, Inc. Light emitting diodes with light filters
US8310043B2 (en) 2008-03-25 2012-11-13 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader with ESD protection layer
US20110156090A1 (en) * 2008-03-25 2011-06-30 Lin Charles W C Semiconductor chip assembly with post/base/post heat spreader and asymmetric posts
US8329510B2 (en) 2008-03-25 2012-12-11 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/base heat spreader with an ESD protection layer
US8415703B2 (en) * 2008-03-25 2013-04-09 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base/flange heat spreader and cavity in flange
US8354688B2 (en) 2008-03-25 2013-01-15 Bridge Semiconductor Corporation Semiconductor chip assembly with bump/base/ledge heat spreader, dual adhesives and cavity in bump
US20100052005A1 (en) * 2008-03-25 2010-03-04 Lin Charles W C Semiconductor chip assembly with post/base heat spreader and conductive trace
US8207553B2 (en) * 2008-03-25 2012-06-26 Bridge Semiconductor Corporation Semiconductor chip assembly with base heat spreader and cavity in base
US8288792B2 (en) * 2008-03-25 2012-10-16 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base/post heat spreader
US20100181594A1 (en) * 2008-03-25 2010-07-22 Lin Charles W C Semiconductor chip assembly with post/base heat spreader and cavity over post
US8148747B2 (en) * 2008-03-25 2012-04-03 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base/cap heat spreader
US8324723B2 (en) * 2008-03-25 2012-12-04 Bridge Semiconductor Corporation Semiconductor chip assembly with bump/base heat spreader and dual-angle cavity in bump
US20100072511A1 (en) * 2008-03-25 2010-03-25 Lin Charles W C Semiconductor chip assembly with copper/aluminum post/base heat spreader
US20110163348A1 (en) * 2008-03-25 2011-07-07 Bridge Semiconductor Corporation Semiconductor chip assembly with bump/base heat spreader and inverted cavity in bump
US20090284932A1 (en) * 2008-03-25 2009-11-19 Bridge Semiconductor Corporation Thermally Enhanced Package with Embedded Metal Slug and Patterned Circuitry
US8212279B2 (en) 2008-03-25 2012-07-03 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader, signal post and cavity
US8269336B2 (en) * 2008-03-25 2012-09-18 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and signal post
US8193556B2 (en) * 2008-03-25 2012-06-05 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and cavity in post
US8232576B1 (en) 2008-03-25 2012-07-31 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and ceramic block in post
US8110446B2 (en) 2008-03-25 2012-02-07 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/base heat spreader and a conductive trace
US20110278638A1 (en) 2008-03-25 2011-11-17 Lin Charles W C Semiconductor chip assembly with post/dielectric/post heat spreader
US8378372B2 (en) * 2008-03-25 2013-02-19 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and horizontal signal routing
US8203167B2 (en) * 2008-03-25 2012-06-19 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and adhesive between base and terminal
US8525214B2 (en) 2008-03-25 2013-09-03 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader with thermal via
US8067784B2 (en) 2008-03-25 2011-11-29 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and substrate
US7948076B2 (en) 2008-03-25 2011-05-24 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and vertical signal routing
US8129742B2 (en) 2008-03-25 2012-03-06 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and plated through-hole
US9018667B2 (en) * 2008-03-25 2015-04-28 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and dual adhesives
US8531024B2 (en) * 2008-03-25 2013-09-10 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and multilevel conductive trace
US8314438B2 (en) * 2008-03-25 2012-11-20 Bridge Semiconductor Corporation Semiconductor chip assembly with bump/base heat spreader and cavity in bump
KR101449030B1 (ko) * 2008-04-05 2014-10-08 엘지이노텍 주식회사 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법
DE102009018603B9 (de) 2008-04-25 2021-01-14 Samsung Electronics Co., Ltd. Leuchtvorrichtung und Herstellungsverfahren derselben
TWI415295B (zh) * 2008-06-24 2013-11-11 榮創能源科技股份有限公司 半導體元件的製造方法及其結構
KR101534848B1 (ko) 2008-07-21 2015-07-27 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법. 그리고 발광 소자 및 그발광 소자 제조방법
JP5245614B2 (ja) * 2008-07-29 2013-07-24 豊田合成株式会社 発光装置
US7982232B2 (en) * 2008-08-27 2011-07-19 Showa Denko K.K. Semiconductor light-emitting device, manufacturing method thereof, and lamp
KR101639793B1 (ko) * 2008-09-25 2016-07-15 코닌클리케 필립스 엔.브이. 코팅된 발광 장치 및 그 코팅 방법
TW201015743A (en) * 2008-10-01 2010-04-16 Formosa Epitaxy Inc LED and manufacturing method thereof
KR100999689B1 (ko) * 2008-10-17 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법, 이를 구비한 발광장치
JP2010135746A (ja) * 2008-10-29 2010-06-17 Panasonic Electric Works Co Ltd 半導体発光素子およびその製造方法、発光装置
JP2010114218A (ja) * 2008-11-05 2010-05-20 Toshiba Corp 発光デバイス
US8188496B2 (en) 2008-11-06 2012-05-29 Samsung Led Co., Ltd. Semiconductor light emitting device including substrate having protection layers and method for manufacturing the same
US8791471B2 (en) 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US7834372B2 (en) * 2008-12-16 2010-11-16 Jinhui Zhai High luminous flux warm white solid state lighting device
US8169135B2 (en) * 2008-12-17 2012-05-01 Lednovation, Inc. Semiconductor lighting device with wavelength conversion on back-transferred light path
US7923741B1 (en) 2009-01-05 2011-04-12 Lednovation, Inc. Semiconductor lighting device with reflective remote wavelength conversion
US7804103B1 (en) 2009-01-07 2010-09-28 Lednovation, Inc. White lighting device having short wavelength semiconductor die and trichromatic wavelength conversion layers
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
US20110037083A1 (en) * 2009-01-14 2011-02-17 Alex Chi Keung Chan Led package with contrasting face
US20100184241A1 (en) * 2009-01-16 2010-07-22 Edison Opto Corporation Method for manufacturing thin type light emitting diode assembly
TWI449221B (zh) * 2009-01-16 2014-08-11 億光電子工業股份有限公司 發光二極體封裝結構及其製造方法
US7600882B1 (en) 2009-01-20 2009-10-13 Lednovation, Inc. High efficiency incandescent bulb replacement lamp
JP2014158052A (ja) * 2009-01-30 2014-08-28 Nichia Chem Ind Ltd 発光装置及びその製造方法
JP2010199547A (ja) 2009-01-30 2010-09-09 Nichia Corp 発光装置及びその製造方法
DE102009008738A1 (de) * 2009-02-12 2010-08-19 Osram Opto Semiconductors Gmbh Halbleiteranordnung und Verfahren zum Herstellen einer Halbleiteranordnung
US8115375B1 (en) 2009-02-23 2012-02-14 Lednovation, Inc. Chromaticity tuned solid state lighting apparatus
JP5126127B2 (ja) * 2009-03-17 2013-01-23 豊田合成株式会社 発光装置の製造方法
TWI381556B (zh) * 2009-03-20 2013-01-01 億光電子工業股份有限公司 發光二極體封裝結構及其製作方法
JP5258666B2 (ja) * 2009-04-22 2013-08-07 株式会社半導体エネルギー研究所 発光装置の作製方法および成膜用基板
KR101092063B1 (ko) * 2009-04-28 2011-12-12 엘지이노텍 주식회사 발광소자 패키지 및 그 제조방법
US8207547B2 (en) 2009-06-10 2012-06-26 Brudgelux, Inc. Thin-film LED with P and N contacts electrically isolated from the substrate
KR101055762B1 (ko) * 2009-09-01 2011-08-11 서울반도체 주식회사 옥시오소실리케이트 발광체를 갖는 발광 물질을 채택한 발광 장치
DE102009030205A1 (de) * 2009-06-24 2010-12-30 Litec-Lp Gmbh Leuchtstoffe mit Eu(II)-dotierten silikatischen Luminophore
US9322973B2 (en) 2009-07-16 2016-04-26 Koninklijke Philips N.V. Lighting device with light sources positioned near the bottom surface of a waveguide
US8324653B1 (en) 2009-08-06 2012-12-04 Bridge Semiconductor Corporation Semiconductor chip assembly with ceramic/metal substrate
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8575471B2 (en) * 2009-08-31 2013-11-05 Alliance For Sustainable Energy, Llc Lattice matched semiconductor growth on crystalline metallic substrates
US8961687B2 (en) * 2009-08-31 2015-02-24 Alliance For Sustainable Energy, Llc Lattice matched crystalline substrates for cubic nitride semiconductor growth
CN102002269B (zh) * 2009-09-03 2013-11-20 佛山市国星光电股份有限公司 配置白光发光二极管荧光粉涂覆液的方法
KR101034054B1 (ko) 2009-10-22 2011-05-12 엘지이노텍 주식회사 발광소자 패키지 및 그 제조방법
US8507365B2 (en) * 2009-12-21 2013-08-13 Alliance For Sustainable Energy, Llc Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates
KR100969100B1 (ko) 2010-02-12 2010-07-09 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
TWI492422B (zh) * 2010-03-18 2015-07-11 億光電子工業股份有限公司 具有螢光粉層之發光二極體晶片的製作方法
JP4806111B1 (ja) * 2010-04-20 2011-11-02 パナソニック株式会社 発光ダイオード
US8232117B2 (en) * 2010-04-30 2012-07-31 Koninklijke Philips Electronics N.V. LED wafer with laminated phosphor layer
DE102010029227A1 (de) * 2010-05-21 2011-11-24 Osram Gesellschaft mit beschränkter Haftung Leuchtvorrichtung
US8686401B2 (en) * 2010-06-03 2014-04-01 Kyoto University Ultraviolet irradiation apparatus
WO2011162367A1 (ja) * 2010-06-25 2011-12-29 昭和電工株式会社 半導体発光素子
USD643821S1 (en) * 2010-07-05 2011-08-23 Samsung Led Co., Ltd. Base for light emitting diode
CN101924175B (zh) * 2010-07-12 2013-11-20 深圳大学 一种发光二极管封装装置及封装方法
KR101735670B1 (ko) * 2010-07-13 2017-05-15 엘지이노텍 주식회사 발광 소자
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
US8835192B2 (en) * 2010-08-17 2014-09-16 Konica Minolta, Inc. Method of manufacturing light-emitting device
JP5864089B2 (ja) * 2010-08-25 2016-02-17 日亜化学工業株式会社 発光装置の製造方法
DE112010005894T5 (de) * 2010-09-21 2013-07-18 Kuo-Kuang Chang Herstellungsverfahren für Leuchtdioden mit Gehäuse
TWI446590B (zh) 2010-09-30 2014-07-21 億光電子工業股份有限公司 發光二極體封裝結構及其製作方法
TWI447969B (zh) * 2010-10-20 2014-08-01 英特明光能股份有限公司 發光二極體封裝結構
US8933548B2 (en) 2010-11-02 2015-01-13 Dai Nippon Printing Co., Ltd. Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements
KR101761410B1 (ko) 2010-11-04 2017-07-26 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조방법
WO2012067200A1 (ja) * 2010-11-19 2012-05-24 コニカミノルタオプト株式会社 波長変換素子及びその製造方法、発光装置及びその製造方法
US9425249B2 (en) 2010-12-01 2016-08-23 Alliance For Sustainable Energy, Llc Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers
WO2012074523A1 (en) 2010-12-01 2012-06-07 Alliance For Sustainable Energy, Llc Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates
DE102010054279A1 (de) * 2010-12-13 2012-06-14 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Strahlungskonversionselements, Strahlungskonversionselement und optoelektronisches Bauelement enthaltend ein Strahlungskonversionselement
JP5510312B2 (ja) * 2010-12-28 2014-06-04 コニカミノルタ株式会社 発光装置の製造方法
DE102011012298A1 (de) * 2010-12-28 2012-06-28 Osram Opto Semiconductors Gmbh Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US9508904B2 (en) 2011-01-31 2016-11-29 Cree, Inc. Structures and substrates for mounting optical elements and methods and devices for providing the same background
CN103476903B (zh) 2011-02-24 2016-08-24 日东电工株式会社 具有磷光体组分的发光复合物
EP2685512A4 (de) * 2011-03-11 2014-09-03 Konica Minolta Inc Verfahren zur herstellung einer lichtemittierenden vorrichtung und einer mischphosphorlösung
DE102011100028A1 (de) 2011-04-29 2012-10-31 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
KR101717670B1 (ko) * 2011-06-15 2017-03-17 삼성전자주식회사 반도체 발광소자 제조방법
TW201301588A (zh) * 2011-06-30 2013-01-01 兆鑫光電科技股份有限公司 大發光面積的發光二極體晶粒及其封裝結構
KR101853067B1 (ko) 2011-08-26 2018-04-27 엘지이노텍 주식회사 발광 소자 패키지
JP5899734B2 (ja) * 2011-09-16 2016-04-06 日亜化学工業株式会社 発光装置
JP5533827B2 (ja) * 2011-09-20 2014-06-25 豊田合成株式会社 線状光源装置
JP6066253B2 (ja) * 2011-09-26 2017-01-25 東芝ライテック株式会社 発光装置の製造方法
KR20140054321A (ko) 2011-09-26 2014-05-08 코니카 미놀타 가부시키가이샤 형광체 분산액 및 led 장치의 제조 방법
JP5765428B2 (ja) * 2011-09-27 2015-08-19 コニカミノルタ株式会社 Led装置の製造方法
EP2761677B1 (de) * 2011-09-30 2019-08-21 Microlink Devices, Inc. Durch ein epitaktisches lift-off-verfahren hergestellte lichtemittierende diode
JP5902908B2 (ja) * 2011-10-19 2016-04-13 スタンレー電気株式会社 半導体発光装置および車両用灯具
CN108565329A (zh) * 2011-11-17 2018-09-21 株式会社流明斯 发光元件封装体以及包括该发光元件封装体的背光单元
US20120074455A1 (en) * 2011-11-20 2012-03-29 Foxsemicon Integrated Technology, Inc. Led package structure
US20130154123A1 (en) * 2011-12-20 2013-06-20 Infineon Technologies Ag Semiconductor Device and Fabrication Method
JP2013135082A (ja) 2011-12-26 2013-07-08 Toyoda Gosei Co Ltd 発光装置
JPWO2013121903A1 (ja) * 2012-02-13 2015-05-11 コニカミノルタ株式会社 波長変換素子及びその製造方法、発光装置及びその製造方法
US8803185B2 (en) * 2012-02-21 2014-08-12 Peiching Ling Light emitting diode package and method of fabricating the same
WO2013144834A1 (en) 2012-03-30 2013-10-03 Koninklijke Philips N.V. Light emitting device with wavelength converting side coat
CN103597616A (zh) * 2012-04-09 2014-02-19 日本Colmo股份有限公司 Led器件
TWI489658B (zh) 2012-05-25 2015-06-21 東芝股份有限公司 半導體發光裝置及光源單元
US9059379B2 (en) * 2012-10-29 2015-06-16 Advanced Semiconductor Engineering, Inc. Light-emitting semiconductor packages and related methods
JP2014135473A (ja) * 2012-12-11 2014-07-24 Renesas Electronics Corp 光結合素子
TWM450828U (zh) * 2012-12-14 2013-04-11 點量科技股份有限公司 熱電分離的發光二極體模組和相關的散熱載板
DE102013102482A1 (de) * 2013-03-12 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
TW201511847A (zh) * 2013-04-20 2015-04-01 Mtek Smart Corp 粉粒體之塗布方法
JP6338136B2 (ja) * 2013-04-30 2018-06-06 東芝ライテック株式会社 車両用照明装置、および車両用灯具
JP6155827B2 (ja) * 2013-05-11 2017-07-05 日亜化学工業株式会社 発光装置の製造方法
KR20150143648A (ko) 2013-06-10 2015-12-23 아사히 가세이 이-매터리얼즈 가부시키가이샤 반도체 발광 장치
DE102013112826B4 (de) 2013-11-20 2021-08-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement umfassend eine Haftschicht und Verfahren zur Herstellung einer Haftschicht in einem optoelektronischen Bauelement
JP6237174B2 (ja) * 2013-12-05 2017-11-29 日亜化学工業株式会社 発光装置
JP6432416B2 (ja) * 2014-04-14 2018-12-05 日亜化学工業株式会社 半導体装置
US9660151B2 (en) 2014-05-21 2017-05-23 Nichia Corporation Method for manufacturing light emitting device
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces
KR102224848B1 (ko) * 2014-10-06 2021-03-08 삼성전자주식회사 발광 소자 패키지 제조 방법
JP6481154B2 (ja) * 2014-10-18 2019-03-13 エムテックスマート株式会社 粉粒体の塗布方法
JP6646934B2 (ja) * 2015-02-10 2020-02-14 アルパッド株式会社 半導体発光装置及び半導体発光装置の製造方法
JP6517043B2 (ja) * 2015-02-25 2019-05-22 ルネサスエレクトロニクス株式会社 光結合装置、光結合装置の製造方法および電力変換システム
KR101753185B1 (ko) 2015-06-19 2017-07-04 주식회사 베이스 고 굴절률 및 무 알칼리 유리 및 이를 이용한 색변환 소재 및 led 패키지
CN106328008B (zh) * 2015-06-30 2019-03-22 光宝光电(常州)有限公司 胶体填充至壳体的制法、发光二极管的数字显示器及制法
KR102477353B1 (ko) * 2015-08-06 2022-12-16 삼성전자주식회사 적색 형광체, 백색 발광장치 및 조명 장치
JP6582827B2 (ja) * 2015-09-30 2019-10-02 日亜化学工業株式会社 基板及び発光装置、並びに発光装置の製造方法
US9770688B2 (en) * 2015-10-22 2017-09-26 King Fahd University Of Petroleum And Minerals Si—Y nanocomposite membrane and methods of making and use thereof
CN106935697B (zh) * 2015-12-30 2020-08-14 晶元光电股份有限公司 发光装置以及其制造方法
TWI674684B (zh) * 2015-12-30 2019-10-11 晶元光電股份有限公司 發光裝置以及其製造方法
US10355175B2 (en) 2016-03-10 2019-07-16 Panasonic Intellectual Property Management Co., Ltd. Light emitting device
US10672678B2 (en) * 2016-05-20 2020-06-02 Infineon Technologies Ag Method for forming a chip package with compounds to improve the durability and performance of metal contact structures in the chip package
DE102016109349A1 (de) * 2016-05-20 2017-11-23 Infineon Technologies Ag Chipgehäuse, verfahren zum bilden eines chipgehäuses und verfahren zum bilden eines elektrischen kontakts
DE102016109352B4 (de) 2016-05-20 2022-03-24 Infineon Technologies Ag Chipgehäuse und verfahren zum bilden eines chipgehäuses
CN109716745B (zh) * 2016-08-01 2020-12-18 宁波舜宇光电信息有限公司 摄像模组及其模塑电路板组件和模塑感光组件和制造方法
US10340415B2 (en) * 2016-09-01 2019-07-02 Lg Innotek Co., Ltd. Semiconductor device and semiconductor device package including the same
US10378736B2 (en) * 2016-11-03 2019-08-13 Foshan Nationstar Optoelectronics Co., Ltd. LED bracket, LED bracket array, LED device and LED display screen
TWI606604B (zh) * 2016-12-08 2017-11-21 錼創科技股份有限公司 發光二極體晶片
JP6998114B2 (ja) * 2016-12-27 2022-02-04 日亜化学工業株式会社 発光装置の製造方法
JP6775429B2 (ja) * 2017-01-16 2020-10-28 日本特殊陶業株式会社 波長変換部材の製造方法
JP7248379B2 (ja) * 2017-07-24 2023-03-29 日亜化学工業株式会社 発光装置及びその製造方法
US10672960B2 (en) 2017-10-19 2020-06-02 Lumileds Llc Light emitting device package with a coating layer
CN111837245A (zh) * 2017-10-19 2020-10-27 亮锐有限责任公司 发光器件封装
CN108194844B (zh) * 2017-12-31 2022-02-25 上海极优威光电科技有限公司 一种电子束激发荧光粉的深紫外光源
JP6578033B2 (ja) * 2018-01-29 2019-09-18 ウォン ユン、セ 電子部品の容器の製造方法
WO2020049732A1 (ja) * 2018-09-07 2020-03-12 三菱電機株式会社 気密パッケージ
JP7140978B2 (ja) 2019-05-27 2022-09-22 日亜化学工業株式会社 窒化物半導体発光素子の製造方法
KR102420160B1 (ko) * 2019-07-26 2022-07-13 한국광기술원 마이크로 led 리페어 공정
CN111009605B (zh) * 2019-12-31 2024-08-30 广东晶科电子股份有限公司 一种可调发光面的发光二极管及其制作方法
KR20220137867A (ko) * 2020-02-13 2022-10-12 도레이 카부시키가이샤 파장 변환 기판의 제조 방법, 파장 변환 기판, 및 디스플레이
DE102020206897A1 (de) * 2020-06-03 2021-12-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements
JP7640414B2 (ja) * 2021-09-07 2025-03-05 株式会社東芝 半導体装置及びその製造方法
WO2023042946A1 (ko) * 2021-09-17 2023-03-23 엘지전자 주식회사 디스플레이 장치
CN116410735A (zh) * 2021-12-30 2023-07-11 财团法人工业技术研究院 光电转换化合物及包括其的光电转换组合物
WO2023225782A1 (zh) * 2022-05-23 2023-11-30 京东方科技集团股份有限公司 发光器件、显示装置
CN115251696B (zh) * 2022-08-03 2023-06-27 浙江三禾厨具有限公司 平底锅氧化的预备方法
JP7498319B1 (ja) 2023-01-27 2024-06-11 日機装株式会社 発光装置の製造方法

Family Cites Families (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5145234B2 (de) 1973-12-12 1976-12-02
JPS524175A (en) * 1975-06-30 1977-01-13 Hitachi Ltd Groups iii-v compounds semiconductor device
JPS58195276A (ja) 1982-05-08 1983-11-14 Fujitsu Ltd パタ−ンマツチング方式
JPS617671A (ja) 1984-06-21 1986-01-14 Matsushita Electric Ind Co Ltd 窒化ガリウム半導体装置
JPS6159886A (ja) 1984-08-31 1986-03-27 Fujitsu Ltd 光半導体装置の製造方法
JPS61158606A (ja) 1984-12-28 1986-07-18 株式会社小糸製作所 照明装置
JPS61183986A (ja) 1985-02-08 1986-08-16 Toshiba Corp 半導体発光装置の製造方法
JPH0740603B2 (ja) 1985-02-08 1995-05-01 株式会社東芝 半導体装置の製造方法
JPH0638536B2 (ja) 1985-02-08 1994-05-18 株式会社東芝 半導体レ−ザ−の製造方法
JPS62132990A (ja) * 1985-12-05 1987-06-16 Toshiba Corp 蛍光体の製造方法
JP2714470B2 (ja) * 1990-03-02 1998-02-16 三菱電機株式会社 黒鉛粒子分散銀めっき方法
JP2851915B2 (ja) * 1990-04-26 1999-01-27 触媒化成工業株式会社 半導体装置
JPH0429374A (ja) 1990-05-24 1992-01-31 Omron Corp 面出射型半導体発光素子およびその作製方法
JP2958466B2 (ja) * 1990-06-27 1999-10-06 株式会社高純度化学研究所 シリコン酸化膜の製造方法
JPH0529663A (ja) * 1991-07-23 1993-02-05 Sharp Corp 光半導体装置およびその樹脂封止方法
JPH05198689A (ja) * 1992-01-22 1993-08-06 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3218782B2 (ja) * 1992-11-11 2001-10-15 ジェイエスアール株式会社 着色複合粒子とその製造方法
JP2695585B2 (ja) 1992-12-28 1997-12-24 キヤノン株式会社 光起電力素子及びその製造方法、並びにそれを用いた発電装置
JP2728190B2 (ja) 1993-02-05 1998-03-18 日亜化学工業株式会社 半導体レーザ素子
US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
JP2836687B2 (ja) * 1993-04-03 1998-12-14 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JPH06322288A (ja) * 1993-05-14 1994-11-22 Otsuka Chem Co Ltd 微粉末の製造方法
JPH0786640A (ja) * 1993-06-17 1995-03-31 Nichia Chem Ind Ltd 発光デバイス
DE4402873A1 (de) * 1994-02-01 1995-08-03 Basf Ag Zusammensetzungen, enthaltend Metallpartikel im Nanometergrößenbereich
JP2834667B2 (ja) * 1994-03-25 1998-12-09 川崎製鉄株式会社 半導体装置の製造方法
JP2827937B2 (ja) * 1994-11-22 1998-11-25 富士ゼロックス株式会社 下引き層を有する電子写真感光体および電子写真装置
WO1996025020A1 (en) * 1995-02-06 1996-08-15 Idemitsu Kosan Co., Ltd. Multi-color light emission apparatus and method for production thereof
JPH08279627A (ja) * 1995-04-07 1996-10-22 Showa Denko Kk 発光素子
US5739554A (en) 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
JP3511970B2 (ja) 1995-06-15 2004-03-29 日亜化学工業株式会社 窒化物半導体発光素子
JP3259811B2 (ja) * 1995-06-15 2002-02-25 日亜化学工業株式会社 窒化物半導体素子の製造方法及び窒化物半導体素子
US6652922B1 (en) 1995-06-15 2003-11-25 Alliedsignal Inc. Electron-beam processed films for microelectronics structures
JP3269070B2 (ja) 1995-10-30 2002-03-25 日亜化学工業株式会社 窒化物半導体発光素子
KR100317898B1 (ko) * 1996-06-24 2002-06-27 우츠미 오사무 투명피막형성용도포액,투명피막이도포된기재및그의용도
DE19638667C2 (de) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US5684309A (en) 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
JP3087829B2 (ja) * 1996-10-14 2000-09-11 日亜化学工業株式会社 窒化物半導体素子の製造方法
JP3448441B2 (ja) 1996-11-29 2003-09-22 三洋電機株式会社 発光装置
US6274890B1 (en) * 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
JPH10209555A (ja) 1997-01-17 1998-08-07 Fujikura Ltd 面発光型半導体レーザ
JP3195265B2 (ja) * 1997-01-18 2001-08-06 東京応化工業株式会社 Bi系強誘電体薄膜形成用塗布液およびこれを用いて形成した強誘電体薄膜、強誘電体メモリ
JP4146527B2 (ja) 1997-01-24 2008-09-10 ローム株式会社 半導体発光素子およびその製法
JP3246386B2 (ja) * 1997-03-05 2002-01-15 日亜化学工業株式会社 発光ダイオード及び発光ダイオード用の色変換モールド部材
US6319425B1 (en) * 1997-07-07 2001-11-20 Asahi Rubber Inc. Transparent coating member for light-emitting diodes and a fluorescent color light source
JP3914615B2 (ja) 1997-08-19 2007-05-16 住友電気工業株式会社 半導体発光素子及びその製造方法
US6340824B1 (en) * 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
JP3301601B2 (ja) 1998-01-27 2002-07-15 日亜化学工業株式会社 窒化物半導体発光素子
JP4126749B2 (ja) 1998-04-22 2008-07-30 ソニー株式会社 半導体装置の製造方法
JP3471220B2 (ja) * 1998-05-27 2003-12-02 株式会社東芝 半導体発光装置
JP2000031530A (ja) * 1998-07-14 2000-01-28 Toshiba Electronic Engineering Corp 半導体発光装置およびその製造方法
JP3645422B2 (ja) * 1998-07-14 2005-05-11 東芝電子エンジニアリング株式会社 発光装置
JP2000067673A (ja) 1998-08-26 2000-03-03 Seikei Giken:Kk 電線防護部材の製造方法と該方法に使用する装置
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
JP4350183B2 (ja) 1998-12-16 2009-10-21 東芝電子エンジニアリング株式会社 半導体発光装置
JP3469484B2 (ja) 1998-12-24 2003-11-25 株式会社東芝 半導体発光素子およびその製造方法
JP3531722B2 (ja) 1998-12-28 2004-05-31 信越半導体株式会社 発光ダイオードの製造方法
US6328796B1 (en) 1999-02-01 2001-12-11 The United States Of America As Represented By The Secretary Of The Navy Single-crystal material on non-single-crystalline substrate
US20010042866A1 (en) 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
JP3275308B2 (ja) * 1999-04-13 2002-04-15 サンケン電気株式会社 半導体発光装置及びその製法
JP3399440B2 (ja) * 1999-04-26 2003-04-21 松下電器産業株式会社 複合発光素子と発光装置及びその製造方法
JP3503131B2 (ja) * 1999-06-03 2004-03-02 サンケン電気株式会社 半導体発光装置
JP2001007394A (ja) 1999-06-18 2001-01-12 Ricoh Co Ltd 半導体基板およびその作製方法および半導体発光素子
JP3690968B2 (ja) * 1999-06-30 2005-08-31 日亜化学工業株式会社 発光装置及びその形成方法
WO2001008452A1 (de) 1999-07-23 2001-02-01 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Leuchstoff für lichtquellen und zugehörige lichtquelle
JP2001144331A (ja) 1999-09-02 2001-05-25 Toyoda Gosei Co Ltd 発光装置
JP2001085747A (ja) * 1999-09-13 2001-03-30 Sanken Electric Co Ltd 半導体発光装置
JP3511993B2 (ja) * 1999-10-25 2004-03-29 日亜化学工業株式会社 発光装置
US6513949B1 (en) 1999-12-02 2003-02-04 Koninklijke Philips Electronics N.V. LED/phosphor-LED hybrid lighting systems
JP3614070B2 (ja) 2000-01-17 2005-01-26 日亜化学工業株式会社 窒化物半導体発光ダイオード
JP2001203392A (ja) * 2000-01-19 2001-07-27 Matsushita Electric Works Ltd 発光ダイオード
JP2001206710A (ja) * 2000-01-20 2001-07-31 Jsr Corp シリカ系膜の形成方法
JP2001298214A (ja) 2000-02-10 2001-10-26 Sharp Corp 半導体発光素子およびその製造方法
JP2001230059A (ja) * 2000-02-10 2001-08-24 Ibiden Co Ltd 半導体製造・検査装置用セラミック基板
JP4501225B2 (ja) 2000-02-21 2010-07-14 日亜化学工業株式会社 発光素子および発光素子の製造方法
KR100385194B1 (ko) * 2000-02-28 2003-05-27 도오꾜오까고오교 가부시끼가이샤 Bi계 강유전체 박막형성용 도포액 및 이것을 사용한Bi계 강유전체 박막의 형성방법
JP2001253294A (ja) * 2000-03-10 2001-09-18 Toyoda Gosei Co Ltd 車両用メータの直接照明装置及びメータレンズ
US6522065B1 (en) * 2000-03-27 2003-02-18 General Electric Company Single phosphor for creating white light with high luminosity and high CRI in a UV led device
US6409938B1 (en) * 2000-03-27 2002-06-25 The General Electric Company Aluminum fluoride flux synthesis method for producing cerium doped YAG
JP2001284641A (ja) 2000-03-31 2001-10-12 Sony Corp 画像表示素子
EP1277240B1 (de) 2000-04-26 2015-05-20 OSRAM Opto Semiconductors GmbH Verfahren zur Herstellung eines lichtmittierenden Halbleiterbauelements
HUP0300802A3 (en) * 2000-06-08 2005-07-28 Lambert Stephen Hereford Improved luminous materials
JP3478287B2 (ja) 2001-09-03 2003-12-15 日亜化学工業株式会社 窒化ガリウム系化合物半導体の結晶成長方法と窒化ガリウム系化合物半導体
EP1437776B1 (de) 2001-10-12 2011-09-21 Nichia Corporation Lichtemittierendes bauelement und verfahren zu seiner herstellung
US6455340B1 (en) 2001-12-21 2002-09-24 Xerox Corporation Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff
US20030189215A1 (en) 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
JP4019262B2 (ja) * 2002-09-20 2007-12-12 富士ゼロックス株式会社 光検出装置及びその使用方法並びに画像形成装置

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EP1437776A4 (de) 2007-01-17
CN1476640A (zh) 2004-02-18
JP4924536B2 (ja) 2012-04-25
US20060267042A1 (en) 2006-11-30
US7390684B2 (en) 2008-06-24
JPWO2003034508A1 (ja) 2005-02-03
WO2003034508A1 (fr) 2003-04-24
US20040061433A1 (en) 2004-04-01
EP1437776A1 (de) 2004-07-14
EP1437776B1 (de) 2011-09-21
JP2008205511A (ja) 2008-09-04
US7301175B2 (en) 2007-11-27

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