ATE531081T1 - Transistoren auf nirtridbasis mit seitlich aufgewachsener aktivregion und herstellungsverfahren dafür - Google Patents

Transistoren auf nirtridbasis mit seitlich aufgewachsener aktivregion und herstellungsverfahren dafür

Info

Publication number
ATE531081T1
ATE531081T1 AT05730396T AT05730396T ATE531081T1 AT E531081 T1 ATE531081 T1 AT E531081T1 AT 05730396 T AT05730396 T AT 05730396T AT 05730396 T AT05730396 T AT 05730396T AT E531081 T1 ATE531081 T1 AT E531081T1
Authority
AT
Austria
Prior art keywords
group iii
nitride
layer
nirtride
production process
Prior art date
Application number
AT05730396T
Other languages
English (en)
Inventor
Adam Saxler
Scott Sheppard
Richard Smith
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE531081T1 publication Critical patent/ATE531081T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
AT05730396T 2004-07-26 2005-03-30 Transistoren auf nirtridbasis mit seitlich aufgewachsener aktivregion und herstellungsverfahren dafür ATE531081T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/899,215 US20060017064A1 (en) 2004-07-26 2004-07-26 Nitride-based transistors having laterally grown active region and methods of fabricating same
PCT/US2005/010869 WO2006022872A1 (en) 2004-07-26 2005-03-30 Nitride-based transistors having laterally grown active region and methods of fabricating same

Publications (1)

Publication Number Publication Date
ATE531081T1 true ATE531081T1 (de) 2011-11-15

Family

ID=34964204

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05730396T ATE531081T1 (de) 2004-07-26 2005-03-30 Transistoren auf nirtridbasis mit seitlich aufgewachsener aktivregion und herstellungsverfahren dafür

Country Status (6)

Country Link
US (2) US20060017064A1 (de)
EP (1) EP1779437B1 (de)
JP (1) JP2008507853A (de)
AT (1) ATE531081T1 (de)
TW (1) TW200605349A (de)
WO (1) WO2006022872A1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US7525130B2 (en) * 2004-09-29 2009-04-28 The Regents Of The University Of California Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same
KR100630197B1 (ko) * 2004-11-03 2006-09-29 삼성전자주식회사 플립 칩 본딩을 위한 반도체 광소자의 제작 방법
DE102005010821B4 (de) * 2005-03-07 2007-01-25 Technische Universität Berlin Verfahren zum Herstellen eines Bauelements
US7405430B2 (en) * 2005-06-10 2008-07-29 Cree, Inc. Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates
US9331192B2 (en) * 2005-06-29 2016-05-03 Cree, Inc. Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
US20070018198A1 (en) * 2005-07-20 2007-01-25 Brandes George R High electron mobility electronic device structures comprising native substrates and methods for making the same
JP2007059595A (ja) * 2005-08-24 2007-03-08 Toshiba Corp 窒化物半導体素子
US20090233414A1 (en) * 2005-10-20 2009-09-17 Shah Pankaj B Method for fabricating group III-nitride high electron mobility transistors (HEMTs)
JP2007294769A (ja) * 2006-04-26 2007-11-08 Toshiba Corp 窒化物半導体素子
JP2008071877A (ja) * 2006-09-13 2008-03-27 Rohm Co Ltd ＧａＮ系半導体素子
US8421119B2 (en) 2006-09-13 2013-04-16 Rohm Co., Ltd. GaN related compound semiconductor element and process for producing the same and device having the same
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
JP2008311355A (ja) * 2007-06-13 2008-12-25 Rohm Co Ltd 窒化物半導体素子
US8692319B2 (en) * 2011-06-03 2014-04-08 Infineon Technologies Austria Ag Lateral trench MESFET
US8637924B2 (en) * 2011-06-03 2014-01-28 Infineon Technologies Austria Ag Lateral trench MESFET
KR101813180B1 (ko) 2011-06-28 2017-12-29 삼성전자주식회사 고 전자 이동도 트랜지스터 및 그 제조방법
US8530978B1 (en) 2011-12-06 2013-09-10 Hrl Laboratories, Llc High current high voltage GaN field effect transistors and method of fabricating same
US8575657B2 (en) 2012-03-20 2013-11-05 Northrop Grumman Systems Corporation Direct growth of diamond in backside vias for GaN HEMT devices
US9583574B2 (en) 2012-09-28 2017-02-28 Intel Corporation Epitaxial buffer layers for group III-N transistors on silicon substrates
KR101513123B1 (ko) * 2013-07-17 2015-04-22 경북대학교 산학협력단 반도체소자 및 그 제조방법
US9640422B2 (en) * 2014-01-23 2017-05-02 Intel Corporation III-N devices in Si trenches
KR20150103800A (ko) * 2014-03-04 2015-09-14 전북대학교산학협력단 고효율 이종접합 전계효과 트랜지스터 및 이의 제조방법
US10276712B2 (en) 2014-05-29 2019-04-30 Hrl Laboratories, Llc III-nitride field-effect transistor with dual gates
WO2015195788A1 (en) * 2014-06-17 2015-12-23 The Regents Of The University Of Michigan Resonant body high electron mobility transistor
CN104617136A (zh) * 2015-01-08 2015-05-13 山东大学 4h-碳化硅基n沟道积累型高压绝缘栅双极晶体管
US9812532B1 (en) 2015-08-28 2017-11-07 Hrl Laboratories, Llc III-nitride P-channel transistor
WO2017087197A1 (en) 2015-11-19 2017-05-26 Hrl Laboratories, Llc Iii-nitride field-effect transistor with dual gates
US9786660B1 (en) * 2016-03-17 2017-10-10 Cree, Inc. Transistor with bypassed gate structure field
CN114514616A (zh) * 2019-10-09 2022-05-17 松下知识产权经营株式会社 氮化物半导体结构体、氮化物半导体器件以及用于制作该器件的方法
WO2022104074A1 (en) * 2020-11-13 2022-05-19 The Regents Of The University Of California Epitaxy-enabled substrate transfer
US12218202B2 (en) * 2021-09-16 2025-02-04 Wolfspeed, Inc. Semiconductor device incorporating a substrate recess
CN114883192B (zh) * 2022-04-25 2024-11-12 浙江集迈科微电子有限公司 绝缘衬底上硅与iii-v族器件的单片异质集成结构及制备方法
TWI812573B (zh) * 2023-01-31 2023-08-11 新唐科技股份有限公司 半導體裝置及其形成方法

Family Cites Families (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3255198A (en) * 1960-10-17 1966-06-07 Merck & Co Inc Certain sulfamyl-benzisothiazole compounds
FR2465317A2 (fr) * 1979-03-28 1981-03-20 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
CA1145482A (en) * 1979-12-28 1983-04-26 Takashi Mimura High electron mobility single heterojunction semiconductor device
JPH088350B2 (ja) * 1985-04-08 1996-01-29 日本電気株式会社 半導体装置
US4755867A (en) * 1986-08-15 1988-07-05 American Telephone And Telegraph Company, At&T Bell Laboratories Vertical Enhancement-mode Group III-V compound MISFETs
US4788156A (en) * 1986-09-24 1988-11-29 Microwave Technology, Inc. Subchannel doping to reduce short-gate effects in field effect transistors
US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US5411914A (en) 1988-02-19 1995-05-02 Massachusetts Institute Of Technology III-V based integrated circuits having low temperature growth buffer or passivation layers
EP0334006A1 (de) 1988-02-22 1989-09-27 Siemens Aktiengesellschaft Heteroübergangsfeldeffekttransistor mit gestapelten Kanalschichten
US4946547A (en) * 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5053348A (en) * 1989-12-01 1991-10-01 Hughes Aircraft Company Fabrication of self-aligned, t-gate hemt
US5210051A (en) * 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
US5172197A (en) * 1990-04-11 1992-12-15 Hughes Aircraft Company Hemt structure with passivated donor layer
US5292501A (en) * 1990-06-25 1994-03-08 Degenhardt Charles R Use of a carboxy-substituted polymer to inhibit plaque formation without tooth staining
US5200022A (en) * 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JP3352712B2 (ja) * 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
DE69202554T2 (de) * 1991-12-25 1995-10-19 Nippon Electric Co Tunneltransistor und dessen Herstellungsverfahren.
JPH05275463A (ja) 1992-03-30 1993-10-22 Matsushita Electric Ind Co Ltd 半導体装置
JPH05326561A (ja) * 1992-05-22 1993-12-10 Nec Corp 電界効果トランジスタの製造方法
JPH06267991A (ja) * 1993-03-12 1994-09-22 Hitachi Ltd 半導体装置およびその製造方法
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5686737A (en) * 1994-09-16 1997-11-11 Cree Research, Inc. Self-aligned field-effect transistor for high frequency applications
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5592501A (en) * 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
JP3157690B2 (ja) * 1995-01-19 2001-04-16 沖電気工業株式会社 ｐｎ接合素子の製造方法
US5534462A (en) * 1995-02-24 1996-07-09 Motorola, Inc. Method for forming a plug and semiconductor device having the same
US5670798A (en) * 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
SE9501311D0 (sv) * 1995-04-10 1995-04-10 Abb Research Ltd Method for producing a semiconductor device having a semiconductor layer of SiC
US6002148A (en) * 1995-06-30 1999-12-14 Motorola, Inc. Silicon carbide transistor and method
KR100195269B1 (ko) * 1995-12-22 1999-06-15 윤종용 액정표시장치의 제조방법
US5915164A (en) * 1995-12-28 1999-06-22 U.S. Philips Corporation Methods of making high voltage GaN-A1N based semiconductor devices
DE19600116C2 (de) * 1996-01-03 2001-03-15 Siemens Ag Doppelheterostruktur-HEMT
JPH1050982A (ja) 1996-07-31 1998-02-20 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
US6936839B2 (en) * 1996-10-16 2005-08-30 The University Of Connecticut Monolithic integrated circuit including a waveguide and quantum well inversion channel devices and a method of fabricating same
US6677619B1 (en) * 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6448648B1 (en) * 1997-03-27 2002-09-10 The United States Of America As Represented By The Secretary Of The Navy Metalization of electronic semiconductor devices
JPH10335637A (ja) * 1997-05-30 1998-12-18 Sony Corp ヘテロ接合電界効果トランジスタ
US6015979A (en) * 1997-08-29 2000-01-18 Kabushiki Kaisha Toshiba Nitride-based semiconductor element and method for manufacturing the same
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JP3372470B2 (ja) * 1998-01-20 2003-02-04 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体装置
US6051849A (en) * 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US6608327B1 (en) * 1998-02-27 2003-08-19 North Carolina State University Gallium nitride semiconductor structure including laterally offset patterned layers
US6150680A (en) * 1998-03-05 2000-11-21 Welch Allyn, Inc. Field effect semiconductor device having dipole barrier
JPH11261053A (ja) 1998-03-09 1999-09-24 Furukawa Electric Co Ltd:The 高移動度トランジスタ
US6086673A (en) * 1998-04-02 2000-07-11 Massachusetts Institute Of Technology Process for producing high-quality III-V nitride substrates
US6500257B1 (en) * 1998-04-17 2002-12-31 Agilent Technologies, Inc. Epitaxial material grown laterally within a trench and method for producing same
US6265289B1 (en) * 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
US6316793B1 (en) * 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
US6255198B1 (en) 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6177688B1 (en) * 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
JP3209270B2 (ja) * 1999-01-29 2001-09-17 日本電気株式会社 ヘテロ接合電界効果トランジスタ
US6582906B1 (en) * 1999-04-05 2003-06-24 Affymetrix, Inc. Proportional amplification of nucleic acids
US6518637B1 (en) * 1999-04-08 2003-02-11 Wayne State University Cubic (zinc-blende) aluminum nitride
US6218680B1 (en) * 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
US6177359B1 (en) * 1999-06-07 2001-01-23 Agilent Technologies, Inc. Method for detaching an epitaxial layer from one substrate and transferring it to another substrate
US6812053B1 (en) * 1999-10-14 2004-11-02 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
US6521514B1 (en) * 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
JP4592938B2 (ja) 1999-12-08 2010-12-08 パナソニック株式会社 半導体装置
US6639255B2 (en) * 1999-12-08 2003-10-28 Matsushita Electric Industrial Co., Ltd. GaN-based HFET having a surface-leakage reducing cap layer
US6380108B1 (en) * 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
JP3393602B2 (ja) * 2000-01-13 2003-04-07 松下電器産業株式会社 半導体装置
US6586781B2 (en) * 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
US6403451B1 (en) * 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
JP4667556B2 (ja) * 2000-02-18 2011-04-13 古河電気工業株式会社 縦型ＧａＮ系電界効果トランジスタ、バイポーラトランジスタと縦型ＧａＮ系電界効果トランジスタの製造方法
US6261929B1 (en) * 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
JP2001267242A (ja) * 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体及びその製造方法
EP1265273A4 (de) * 2000-03-14 2009-05-06 Toyoda Gosei Kk Herstellungsverfahren für einen iii-nitridverbin-dungshalbleiter und iii-nitridverbindungshalb-leiterelement
JP3623713B2 (ja) * 2000-03-24 2005-02-23 日本電気株式会社 窒化物半導体発光素子
TW518767B (en) * 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
US6475889B1 (en) * 2000-04-11 2002-11-05 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
JP2001313259A (ja) * 2000-04-28 2001-11-09 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体基板の製造方法及び半導体素子
JP4022708B2 (ja) * 2000-06-29 2007-12-19 日本電気株式会社 半導体装置
US6515316B1 (en) * 2000-07-14 2003-02-04 Trw Inc. Partially relaxed channel HEMT device
US6548333B2 (en) * 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
JP3428962B2 (ja) * 2000-12-19 2003-07-22 古河電気工業株式会社 ＧａＮ系高移動度トランジスタ
US6593193B2 (en) * 2001-02-27 2003-07-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP3679720B2 (ja) * 2001-02-27 2005-08-03 三洋電機株式会社 窒化物系半導体素子および窒化物系半導体の形成方法
US6849882B2 (en) * 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
US6706114B2 (en) * 2001-05-21 2004-03-16 Cree, Inc. Methods of fabricating silicon carbide crystals
US6646293B2 (en) * 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
CN1557024B (zh) * 2001-07-24 2010-04-07 美商克立股份有限公司 绝缘栅铝镓氮化物/氮化钾高电子迁移率晶体管(hemt)
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
JP2003178976A (ja) * 2001-12-12 2003-06-27 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP3986887B2 (ja) * 2002-05-17 2007-10-03 松下電器産業株式会社 半導体装置
US6982204B2 (en) 2002-07-16 2006-01-03 Cree, Inc. Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
US20040021152A1 (en) * 2002-08-05 2004-02-05 Chanh Nguyen Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate
US6884704B2 (en) * 2002-08-05 2005-04-26 Hrl Laboratories, Llc Ohmic metal contact and channel protection in GaN devices using an encapsulation layer
US20070029643A1 (en) * 2003-03-21 2007-02-08 Johnson Mark A L Methods for nanoscale structures from optical lithography and subsequent lateral growth
JP4746825B2 (ja) 2003-05-15 2011-08-10 富士通株式会社 化合物半導体装置
US7084441B2 (en) * 2004-05-20 2006-08-01 Cree, Inc. Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same

Also Published As

Publication number Publication date
EP1779437B1 (de) 2011-10-26
TW200605349A (en) 2006-02-01
EP1779437A1 (de) 2007-05-02
US8946777B2 (en) 2015-02-03
US20060017064A1 (en) 2006-01-26
US20100012952A1 (en) 2010-01-21
JP2008507853A (ja) 2008-03-13
WO2006022872A1 (en) 2006-03-02

Similar Documents

Publication Publication Date Title
ATE531081T1 (de) Transistoren auf nirtridbasis mit seitlich aufgewachsener aktivregion und herstellungsverfahren dafür
ATE461526T1 (de) Hochdichtes finfet-integrationsverfahren
TW200633137A (en) Semiconductor constructions and transistors, and methods of forming semiconductor constructions and transistors
TW200625634A (en) Transistor with strained region and method of manufacture
TW200711001A (en) Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same
EP1542270A4 (de) Vertikal-sperrschichtfeldeffekttransistor und verfahren zu seiner herstellung
WO2009036266A3 (en) Iii-nitride bidirectional switches
TW200603294A (en) Method of making transistor with strained source/drain
WO2007082266A3 (en) Semiconductor transistors with expanded top portions of gates
EP2363890A3 (de) Transistor mit hoher Elektronenmobilität mit Doppelverarmung und Herstellungsverfahren dafür
WO2008005916A3 (en) Method for making planar nanowire surround gate mosfet
MY188298A (en) Multi-gate high electron mobility transistors and methods of fabrication
WO2005036650A3 (en) Insulated gate type semiconductor device and manufacturing method thereof
EP1555688A3 (de) Ein FinFET mit mehrseitigem Kanal und zugehöriges Herstellungsverfahren.
WO2011071598A3 (en) Quantum-well-based semiconductor devices
WO2005086237A3 (en) Ldmos transistor and method of making the same
TW200715562A (en) Thin film transistor substrate and fabrication thereof
WO2008027143A3 (en) Semiconductor devices, assemblies and contructions, and methods of forming semiconductor devices, assemblies and constructions
TW200633125A (en) Semiconductor device and method of semiconductor device
EP2824711A3 (de) Vertikale Transistoren mit P-Typ-Galliumnitridstromsperrschichten und Herstellungsverfahren dafür
ATE428187T1 (de) Transistoren mit vergrabenen n- und p-regionen unter der source-region und herstellungsverfahren dafur
TW200733300A (en) Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabricating same
WO2002078090A3 (en) Field-effect transistor structure and method of manufacture
WO2012071297A3 (en) Vertical dmos field -effect transistor and method of making the same
WO2007078957A3 (en) Method and structure for reducing the external resistance of a three-dimensional transistor through use of epitaxial layers

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties