ATE532103T1 - Auf sensitivität basierendes evaluierungsverfahren für eine harzzusammensetzung - Google Patents
Auf sensitivität basierendes evaluierungsverfahren für eine harzzusammensetzungInfo
- Publication number
- ATE532103T1 ATE532103T1 AT05111460T AT05111460T ATE532103T1 AT E532103 T1 ATE532103 T1 AT E532103T1 AT 05111460 T AT05111460 T AT 05111460T AT 05111460 T AT05111460 T AT 05111460T AT E532103 T1 ATE532103 T1 AT E532103T1
- Authority
- AT
- Austria
- Prior art keywords
- resist composition
- acid
- structural units
- component
- resin composition
- Prior art date
Links
- 230000035945 sensitivity Effects 0.000 title abstract 2
- 238000011156 evaluation Methods 0.000 title 1
- 239000011342 resin composition Substances 0.000 title 1
- 239000002253 acid Substances 0.000 abstract 4
- 238000004090 dissolution Methods 0.000 abstract 2
- 230000002401 inhibitory effect Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 abstract 1
- -1 acrylate ester Chemical class 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 150000008064 anhydrides Chemical class 0.000 abstract 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract 1
- 238000000671 immersion lithography Methods 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003025152 | 2003-01-31 | ||
| JP2003045000 | 2003-02-21 | ||
| JP2003062531 | 2003-03-07 | ||
| JP2003125244 | 2003-04-30 | ||
| JP2003157257 | 2003-06-02 | ||
| JP2003195403 | 2003-07-10 | ||
| JP2003426939 | 2003-12-24 | ||
| JP2004017355A JP4434762B2 (ja) | 2003-01-31 | 2004-01-26 | レジスト組成物 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE532103T1 true ATE532103T1 (de) | 2011-11-15 |
Family
ID=32831263
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT05111460T ATE532103T1 (de) | 2003-01-31 | 2004-01-27 | Auf sensitivität basierendes evaluierungsverfahren für eine harzzusammensetzung |
| AT04705532T ATE529780T1 (de) | 2003-01-31 | 2004-01-27 | Resistzusammensetzung |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04705532T ATE529780T1 (de) | 2003-01-31 | 2004-01-27 | Resistzusammensetzung |
Country Status (9)
| Country | Link |
|---|---|
| US (4) | US7501220B2 (de) |
| EP (3) | EP1589375B1 (de) |
| JP (1) | JP4434762B2 (de) |
| KR (3) | KR100660791B1 (de) |
| CN (3) | CN100533143C (de) |
| AT (2) | ATE532103T1 (de) |
| SG (1) | SG133444A1 (de) |
| TW (3) | TWI338192B (de) |
| WO (1) | WO2004068242A1 (de) |
Families Citing this family (113)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050098957A (ko) * | 2003-02-25 | 2005-10-12 | 도오꾜오까고오교 가부시끼가이샤 | 포토레지스트 조성물 및 레지스트 패턴의 형성 방법 |
| JP4772288B2 (ja) * | 2003-06-05 | 2011-09-14 | 東京応化工業株式会社 | ホトレジスト組成物用樹脂、ホトレジスト組成物、およびレジストパターン形成方法 |
| JP4265766B2 (ja) * | 2003-08-25 | 2009-05-20 | 東京応化工業株式会社 | 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法 |
| JP4188265B2 (ja) | 2003-10-23 | 2008-11-26 | 東京応化工業株式会社 | レジスト組成物およびレジストパターン形成方法 |
| JP4300131B2 (ja) * | 2004-02-16 | 2009-07-22 | 富士フイルム株式会社 | 液浸プロセス用化学増幅型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4365236B2 (ja) | 2004-02-20 | 2009-11-18 | 富士フイルム株式会社 | 液浸露光用レジスト組成物及びそれを用いたパターン形成方法 |
| EP1741730B1 (de) | 2004-04-27 | 2010-05-12 | Tokyo Ohka Kogyo Co., Ltd. | Material zur bildung eines resistschutzfilms für das eintauchbelichtungsverfahren und verfahren zur bildung eines resistmusters unter verwendung des schutzfilms |
| JP4264038B2 (ja) * | 2004-07-13 | 2009-05-13 | パナソニック株式会社 | 液浸露光用の液体及びパターン形成方法 |
| JP4368267B2 (ja) | 2004-07-30 | 2009-11-18 | 東京応化工業株式会社 | レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法 |
| JP2006073967A (ja) * | 2004-09-06 | 2006-03-16 | Tokyo Ohka Kogyo Co Ltd | 液浸露光プロセス用浸漬液および該浸漬液を用いたレジストパターン形成方法 |
| JP2006113140A (ja) * | 2004-10-12 | 2006-04-27 | Tokyo Ohka Kogyo Co Ltd | 液浸露光用ポジ型レジスト組成物およびレジストパターン形成方法 |
| JP4597655B2 (ja) * | 2004-12-20 | 2010-12-15 | 東京応化工業株式会社 | レジストパターン形成方法 |
| US7459261B2 (en) * | 2005-01-06 | 2008-12-02 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process using the same |
| US7947421B2 (en) | 2005-01-24 | 2011-05-24 | Fujifilm Corporation | Positive resist composition for immersion exposure and pattern-forming method using the same |
| TWI471699B (zh) | 2005-03-04 | 2015-02-01 | 富士軟片股份有限公司 | 正型光阻組成物及使用它之圖案形成方法 |
| JP5203575B2 (ja) * | 2005-05-04 | 2013-06-05 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | コーティング組成物 |
| TW200707124A (en) * | 2005-06-29 | 2007-02-16 | Nikon Corp | Exposure apparatus, substrate processing method, and device producing method |
| US7927779B2 (en) * | 2005-06-30 | 2011-04-19 | Taiwan Semiconductor Manufacturing Companym, Ltd. | Water mark defect prevention for immersion lithography |
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| EP1783553A1 (de) * | 2005-11-07 | 2007-05-09 | Interuniversitair Microelektronica Centrum | Verfahren zur Untersuchung der Interaktion zwischen Immersionsflüssigkeit und Substrat |
| JP2007133208A (ja) * | 2005-11-11 | 2007-05-31 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物およびレジストパターン形成方法 |
| US7629106B2 (en) * | 2005-11-16 | 2009-12-08 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process using the same |
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| US7538858B2 (en) * | 2006-01-11 | 2009-05-26 | Micron Technology, Inc. | Photolithographic systems and methods for producing sub-diffraction-limited features |
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| JP5114022B2 (ja) | 2006-01-23 | 2013-01-09 | 富士フイルム株式会社 | パターン形成方法 |
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| US8945808B2 (en) * | 2006-04-28 | 2015-02-03 | International Business Machines Corporation | Self-topcoating resist for photolithography |
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| JP4615497B2 (ja) | 2006-09-20 | 2011-01-19 | 東京応化工業株式会社 | レジスト保護膜形成用組成物及びこれを用いたレジストパターンの形成方法 |
| KR101400824B1 (ko) | 2006-09-25 | 2014-05-29 | 후지필름 가부시키가이샤 | 레지스트 조성물, 이 레지스트 조성물에 사용되는 수지, 이수지의 합성에 사용되는 화합물, 및 상기 레지스트조성물을 사용한 패턴형성방법 |
| US8637229B2 (en) | 2006-12-25 | 2014-01-28 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
| JP4554665B2 (ja) | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液 |
| US8530148B2 (en) | 2006-12-25 | 2013-09-10 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
| JP2008209889A (ja) | 2007-01-31 | 2008-09-11 | Fujifilm Corp | ポジ型レジスト組成物及び該ポジ型レジスト組成物を用いたパターン形成方法 |
| JP5401046B2 (ja) | 2007-03-14 | 2014-01-29 | 富士フイルム株式会社 | レジスト表面疎水化用樹脂の製造方法、その製造方法及び該樹脂を含有するポジ型レジスト組成物の調整方法、レジスト膜の形成方法、及び、パターン形成方法 |
| JP5186255B2 (ja) | 2007-03-20 | 2013-04-17 | 富士フイルム株式会社 | レジスト表面疎水化用樹脂、その製造方法及び該樹脂を含有するポジ型レジスト組成物 |
| EP1975705B1 (de) | 2007-03-28 | 2016-04-27 | FUJIFILM Corporation | Positive Resistzusammensetzung und Verfahren zur Strukturformung |
| JP4621754B2 (ja) | 2007-03-28 | 2011-01-26 | 富士フイルム株式会社 | ポジ型レジスト組成物およびパターン形成方法 |
| US7635554B2 (en) | 2007-03-28 | 2009-12-22 | Fujifilm Corporation | Positive resist composition and pattern forming method |
| US8877421B2 (en) | 2007-03-28 | 2014-11-04 | Fujifilm Corporation | Positive resist composition and pattern-forming method |
| JP4839253B2 (ja) | 2007-03-28 | 2011-12-21 | 富士フイルム株式会社 | ポジ型レジスト組成物およびパターン形成方法 |
| EP1975714A1 (de) | 2007-03-28 | 2008-10-01 | FUJIFILM Corporation | Positive Resistzusammensetzung und Verfahren zur Strukturformung |
| JP4562784B2 (ja) | 2007-04-13 | 2010-10-13 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられるレジスト組成物、現像液及びリンス液 |
| US8603733B2 (en) | 2007-04-13 | 2013-12-10 | Fujifilm Corporation | Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method |
| US8034547B2 (en) | 2007-04-13 | 2011-10-11 | Fujifilm Corporation | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method |
| JP4558064B2 (ja) | 2007-05-15 | 2010-10-06 | 富士フイルム株式会社 | パターン形成方法 |
| US8476001B2 (en) | 2007-05-15 | 2013-07-02 | Fujifilm Corporation | Pattern forming method |
| JP4590431B2 (ja) | 2007-06-12 | 2010-12-01 | 富士フイルム株式会社 | パターン形成方法 |
| JP4617337B2 (ja) | 2007-06-12 | 2011-01-26 | 富士フイルム株式会社 | パターン形成方法 |
| US8632942B2 (en) | 2007-06-12 | 2014-01-21 | Fujifilm Corporation | Method of forming patterns |
| KR20130114280A (ko) | 2007-06-12 | 2013-10-16 | 후지필름 가부시키가이샤 | 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법 |
| US8617794B2 (en) | 2007-06-12 | 2013-12-31 | Fujifilm Corporation | Method of forming patterns |
| TWI481961B (zh) | 2007-08-10 | 2015-04-21 | 富士軟片股份有限公司 | 正型光阻組成物及使用該組成物之圖案形成方法 |
| JP5449675B2 (ja) | 2007-09-21 | 2014-03-19 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物 |
| US8029972B2 (en) * | 2007-10-11 | 2011-10-04 | Tokyo Ohka Kogyo Co., Ltd. | Resist composition and method of forming resist pattern |
| JP5555914B2 (ja) * | 2007-10-29 | 2014-07-23 | Jsr株式会社 | 感放射線性樹脂組成物 |
| TWI391781B (zh) * | 2007-11-19 | 2013-04-01 | Tokyo Ohka Kogyo Co Ltd | 光阻組成物,光阻圖型之形成方法,新穎化合物及酸產生劑 |
| JP5398248B2 (ja) | 2008-02-06 | 2014-01-29 | 東京応化工業株式会社 | 液浸露光用レジスト組成物およびそれを用いたレジストパターン形成方法 |
| JP5150296B2 (ja) * | 2008-02-13 | 2013-02-20 | 富士フイルム株式会社 | 電子線、x線またはeuv用ポジ型レジスト組成物及びこれを用いたパターン形成方法 |
| JP2009224374A (ja) * | 2008-03-13 | 2009-10-01 | Oki Semiconductor Co Ltd | Peb装置及びその制御方法 |
| JP5427447B2 (ja) * | 2008-03-28 | 2014-02-26 | 富士フイルム株式会社 | ポジ型感光性組成物及びそれを用いたパターン形成方法 |
| KR101596061B1 (ko) | 2008-05-19 | 2016-02-19 | 제이에스알 가부시끼가이샤 | 신규 화합물 및 중합체 및 감방사선성 조성물 |
| JP5172494B2 (ja) * | 2008-06-23 | 2013-03-27 | 東京応化工業株式会社 | 液浸露光用レジスト組成物、レジストパターン形成方法、含フッ素高分子化合物 |
| JP5530651B2 (ja) | 2008-07-14 | 2014-06-25 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法 |
| JP2010085605A (ja) * | 2008-09-30 | 2010-04-15 | Hitachi Chem Co Ltd | 感光性樹脂組成物、これを用いた感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法 |
| JP5537962B2 (ja) | 2009-01-16 | 2014-07-02 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物及びこれを用いたパターン形成方法 |
| JP5537963B2 (ja) | 2009-01-16 | 2014-07-02 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物及びそれを用いたパターン形成方法 |
| TWI482755B (zh) | 2009-02-23 | 2015-05-01 | Jsr Corp | A compound and a method for producing the same, a fluorine atom-containing polymer, and a radiation-sensitive resin composition |
| JP5586294B2 (ja) | 2009-03-31 | 2014-09-10 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法 |
| JP5386236B2 (ja) | 2009-06-01 | 2014-01-15 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターン形成方法 |
| KR101769161B1 (ko) | 2009-06-04 | 2017-08-17 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물, 중합체 및 레지스트 패턴 형성 방법 |
| JP5568258B2 (ja) | 2009-07-03 | 2014-08-06 | 東京応化工業株式会社 | ポジ型レジスト組成物およびそれを用いたレジストパターン形成方法、並びに含フッ素高分子化合物 |
| US9023579B2 (en) | 2009-07-10 | 2015-05-05 | Fujifilm Corporation | Actinic-ray- or radiation-sensitive resin composition, compound and method of forming pattern using the composition |
| JP5645459B2 (ja) | 2009-07-10 | 2014-12-24 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物およびこれを用いたパターン形成方法 |
| JP5645510B2 (ja) * | 2009-07-10 | 2014-12-24 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物およびこれを用いたパターン形成方法 |
| JP5629440B2 (ja) | 2009-08-31 | 2014-11-19 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物およびこれを用いたパターン形成方法 |
| JP5505371B2 (ja) * | 2010-06-01 | 2014-05-28 | 信越化学工業株式会社 | 高分子化合物、化学増幅ポジ型レジスト材料、及びパターン形成方法 |
| KR101848955B1 (ko) | 2010-10-04 | 2018-04-13 | 제이에스알 가부시끼가이샤 | 패턴 형성 방법 및 감방사선성 수지 조성물 |
| WO2012049919A1 (ja) | 2010-10-15 | 2012-04-19 | Jsr株式会社 | レジストパターン形成方法及び感放射線性樹脂組成物 |
| WO2012053396A1 (ja) | 2010-10-19 | 2012-04-26 | Jsr株式会社 | レジストパターン形成方法及び感放射線性樹脂組成物 |
| KR101907705B1 (ko) | 2010-10-22 | 2018-10-12 | 제이에스알 가부시끼가이샤 | 패턴 형성 방법 및 감방사선성 조성물 |
| JP5035466B1 (ja) | 2011-02-04 | 2012-09-26 | Jsr株式会社 | レジストパターン形成用感放射線性樹脂組成物 |
| CN106605174B (zh) | 2014-09-30 | 2020-05-19 | 富士胶片株式会社 | 负型图案形成方法、保护膜形成用组合物及电子元件制法 |
| KR101994797B1 (ko) | 2014-12-17 | 2019-09-24 | 후지필름 가부시키가이샤 | 패턴 형성 방법, 보호막 형성용 조성물 및 전자 디바이스의 제조 방법 |
| JP6782102B2 (ja) | 2015-06-26 | 2020-11-11 | 住友化学株式会社 | レジスト組成物 |
| JP6864994B2 (ja) | 2015-06-26 | 2021-04-28 | 住友化学株式会社 | レジスト組成物 |
| JP6883954B2 (ja) | 2015-06-26 | 2021-06-09 | 住友化学株式会社 | レジスト組成物 |
| WO2017094860A1 (ja) | 2015-12-02 | 2017-06-08 | 富士フイルム株式会社 | パターン形成方法、電子デバイスの製造方法、積層膜及び上層膜形成用組成物 |
| JP6796534B2 (ja) * | 2017-03-31 | 2020-12-09 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
| CN111205385A (zh) * | 2020-02-28 | 2020-05-29 | 宁波南大光电材料有限公司 | 含酸抑制剂的改性成膜树脂及其制备方法与光刻胶组合物 |
| CN119882359B (zh) * | 2025-01-20 | 2025-11-21 | 上海积塔半导体有限公司 | 一种接触孔光刻工艺条件设计方法及半导体结构 |
Family Cites Families (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5353314A (en) | 1976-10-26 | 1978-05-15 | Agency Of Ind Science & Technol | Sensitive high polymer composition and picture imae forming method usingsaid composition |
| US4276365A (en) | 1979-07-02 | 1981-06-30 | Fujitsu Limited | Positive resist terpolymer composition and method of forming resist pattern |
| JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
| JPS6265352A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 電子装置 |
| JPS62134644A (ja) | 1985-12-06 | 1987-06-17 | Fujitsu Ltd | ポジ型レジスト組成物 |
| US4792353A (en) | 1986-10-10 | 1988-12-20 | Massachusetts Institute Of Technology | Aluminum oxide-metal compositions |
| JP2653148B2 (ja) | 1989-01-20 | 1997-09-10 | 富士通株式会社 | レジスト組成物 |
| JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
| JP3268585B2 (ja) * | 1993-03-16 | 2002-03-25 | 川崎製鉄株式会社 | 2次元距離計を用いた板幅・蛇行測定装置の校正装置 |
| KR960015081A (ko) | 1993-07-15 | 1996-05-22 | 마쯔모또 에이이찌 | 화학증폭형 레지스트 조성물 |
| JP3438287B2 (ja) | 1994-01-20 | 2003-08-18 | 富士通株式会社 | レジストの品質管理方法 |
| EP0801091B1 (de) | 1995-10-27 | 2001-01-17 | Mitsui Chemicals, Inc. | Halbaromatische polyamidzusamensetzung und verfahren zu ihrer herstellung |
| KR100253575B1 (ko) | 1996-06-24 | 2000-04-15 | 김영환 | 포토레지스트 |
| KR0183901B1 (ko) | 1996-07-03 | 1999-04-01 | 삼성전자 주식회사 | 레지스트 조성물 |
| US5929271A (en) | 1996-08-20 | 1999-07-27 | Tokyo Ohka Kogyo Co., Ltd. | Compounds for use in a positive-working resist composition |
| TW490593B (en) | 1996-10-16 | 2002-06-11 | Sumitomo Chemical Co | Positive resist composition |
| TW495535B (en) | 1997-01-28 | 2002-07-21 | Hitachi Chemical Co Ltd | Epoxy resin composition for semiconductor sealing |
| TW383414B (en) | 1997-03-05 | 2000-03-01 | Tokyo Electron Ltd | Photoresist agent processing method and photoresist agent processing system and evaluation method and processing apparatus for photoresist agent film |
| JP3307853B2 (ja) | 1997-05-30 | 2002-07-24 | 東京エレクトロン株式会社 | 膜厚評価方法および処理装置 |
| US6077643A (en) | 1997-08-28 | 2000-06-20 | Shipley Company, L.L.C. | Polymers and photoresist compositions |
| US6057083A (en) | 1997-11-04 | 2000-05-02 | Shipley Company, L.L.C. | Polymers and photoresist compositions |
| KR19990045397A (ko) | 1997-11-17 | 1999-06-25 | 고오사이 아끼오 | 레지스트 패턴 형성법 및 이 방법에 사용되는포지티브 레지스트 조성물 |
| JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
| AU2747999A (en) * | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
| JP3859353B2 (ja) | 1998-04-28 | 2006-12-20 | 富士通株式会社 | ネガ型レジスト組成物およびレジストパターンの形成方法 |
| KR100382960B1 (ko) | 1998-07-03 | 2003-05-09 | 닛뽕덴끼 가부시끼가이샤 | 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법 |
| JP3042618B2 (ja) | 1998-07-03 | 2000-05-15 | 日本電気株式会社 | ラクトン構造を有する(メタ)アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法 |
| JP2000058436A (ja) * | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
| KR100574574B1 (ko) * | 1998-08-26 | 2006-04-28 | 스미또모 가가꾸 가부시키가이샤 | 화학 증폭형 포지티브 내식막 조성물 |
| JP3876571B2 (ja) * | 1998-08-26 | 2007-01-31 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
| US6303266B1 (en) * | 1998-09-24 | 2001-10-16 | Kabushiki Kaisha Toshiba | Resin useful for resist, resist composition and pattern forming process using the same |
| JP2000121498A (ja) | 1998-10-15 | 2000-04-28 | Nikon Corp | 結像性能の評価方法及び装置 |
| JP3727044B2 (ja) * | 1998-11-10 | 2005-12-14 | 東京応化工業株式会社 | ネガ型レジスト組成物 |
| TWI263866B (en) * | 1999-01-18 | 2006-10-11 | Sumitomo Chemical Co | Chemical amplification type positive resist composition |
| KR100642708B1 (ko) | 1999-03-31 | 2006-11-10 | 다이셀 가가꾸 고교 가부시끼가이샤 | 광산란 시트, 광산란성 복합 시트 및 액정 표시 소자 |
| US6479211B1 (en) * | 1999-05-26 | 2002-11-12 | Fuji Photo Film Co., Ltd. | Positive photoresist composition for far ultraviolet exposure |
| JP3547047B2 (ja) | 1999-05-26 | 2004-07-28 | 富士写真フイルム株式会社 | 遠紫外線露光用ポジ型フォトレジスト組成物 |
| US6461789B1 (en) * | 1999-08-25 | 2002-10-08 | Shin-Etsu Chemical Co., Ltd. | Polymers, chemical amplification resist compositions and patterning process |
| JP4453138B2 (ja) | 1999-12-22 | 2010-04-21 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
| JP4061801B2 (ja) * | 2000-01-24 | 2008-03-19 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
| JP3416618B2 (ja) * | 2000-06-07 | 2003-06-16 | 株式会社半導体先端テクノロジーズ | 薄膜評価方法および薄膜評価装置 |
| JP2002043215A (ja) | 2000-07-28 | 2002-02-08 | Sharp Corp | レジストパターン形成方法および半導体製造装置および半導体装置および携帯情報端末 |
| JP2002057093A (ja) | 2000-08-11 | 2002-02-22 | Tokyo Electron Ltd | 現像処理の評価方法、レジストパタ−ン形成方法及びレジストパタ−ン形成システム |
| JP4441104B2 (ja) | 2000-11-27 | 2010-03-31 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
| JP3945741B2 (ja) * | 2000-12-04 | 2007-07-18 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
| JP4255100B2 (ja) * | 2001-04-06 | 2009-04-15 | 富士フイルム株式会社 | ArFエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法 |
| JP3991191B2 (ja) * | 2001-06-14 | 2007-10-17 | 信越化学工業株式会社 | ラクトン構造を有する新規(メタ)アクリレート化合物、重合体、フォトレジスト材料、及びパターン形成法 |
| JP3803286B2 (ja) | 2001-12-03 | 2006-08-02 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターンの形成方法 |
| JP3841399B2 (ja) * | 2002-02-21 | 2006-11-01 | 富士写真フイルム株式会社 | ポジ型レジスト組成物 |
| US6781670B2 (en) | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
| JP4121388B2 (ja) | 2003-01-30 | 2008-07-23 | 富士フイルム株式会社 | ポジ型レジスト組成物、及び、活性光線の照射により酸を発生する化合物 |
| JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
| JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
| US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
| US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
| JP4235810B2 (ja) * | 2003-10-23 | 2009-03-11 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
| KR100557222B1 (ko) | 2004-04-28 | 2006-03-07 | 동부아남반도체 주식회사 | 이머전 리소그라피 공정의 액체 제거 장치 및 방법 |
-
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- 2004-01-27 KR KR1020057023107A patent/KR100660791B1/ko not_active Expired - Lifetime
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- 2004-01-29 TW TW093102028A patent/TWI304518B/zh not_active IP Right Cessation
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- 2007-01-10 US US11/621,896 patent/US7527909B2/en not_active Expired - Lifetime
- 2007-01-10 US US11/621,895 patent/US7541138B2/en not_active Expired - Lifetime
-
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- 2008-10-15 US US12/252,319 patent/US8198004B2/en not_active Expired - Lifetime
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