ATE538412T1 - Lithographisches system - Google Patents

Lithographisches system

Info

Publication number
ATE538412T1
ATE538412T1 AT03759083T AT03759083T ATE538412T1 AT E538412 T1 ATE538412 T1 AT E538412T1 AT 03759083 T AT03759083 T AT 03759083T AT 03759083 T AT03759083 T AT 03759083T AT E538412 T1 ATE538412 T1 AT E538412T1
Authority
AT
Austria
Prior art keywords
modulation means
pattern data
converting
control unit
digital computer
Prior art date
Application number
AT03759083T
Other languages
English (en)
Inventor
Marco Jan-Jaco Wieland
T Spijker Johannes Christiaan Van
Remco Jager
Pieter Kruit
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Application granted granted Critical
Publication of ATE538412T1 publication Critical patent/ATE538412T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0432—High speed and short duration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H01J2237/0437—Semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/248—Components associated with the control of the tube
    • H01J2237/2482—Optical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
  • Vehicle Body Suspensions (AREA)
  • Fluid-Damping Devices (AREA)
  • Optical Communication System (AREA)
AT03759083T 2002-10-25 2003-10-24 Lithographisches system ATE538412T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US42146402P 2002-10-25 2002-10-25
PCT/NL2003/000725 WO2004038509A2 (en) 2002-10-25 2003-10-24 Lithography system

Publications (1)

Publication Number Publication Date
ATE538412T1 true ATE538412T1 (de) 2012-01-15

Family

ID=32176717

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03759083T ATE538412T1 (de) 2002-10-25 2003-10-24 Lithographisches system

Country Status (9)

Country Link
US (8) US6958804B2 (de)
EP (6) EP2302459A3 (de)
JP (6) JP5112617B2 (de)
KR (3) KR101368027B1 (de)
CN (1) CN100524026C (de)
AT (1) ATE538412T1 (de)
AU (1) AU2003274829A1 (de)
TW (1) TWI300308B (de)
WO (1) WO2004038509A2 (de)

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003079116A1 (en) * 2002-03-19 2003-09-25 Mapper Lithography Ip B.V. Direct write lithography system
KR101368027B1 (ko) * 2002-10-25 2014-02-26 마퍼 리쏘그라피 아이피 비.브이. 리소그라피 장치
DE10319154B4 (de) 2003-04-29 2012-12-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Maskenloses Lithographiesystem
US7372547B2 (en) * 2004-04-27 2008-05-13 Lsi Corporation Process and apparatus for achieving single exposure pattern transfer using maskless optical direct write lithography
EP1766653B1 (de) * 2004-05-17 2009-08-26 Mapper Lithography Ip B.V. Belichtungssystem mit einem geladenen teilchenstrahl
US7145636B2 (en) * 2004-12-28 2006-12-05 Asml Netherlands Bv System and method for determining maximum operational parameters used in maskless applications
WO2006076740A2 (en) * 2005-01-14 2006-07-20 Arradiance, Inc. Synchronous raster scanning lithographic system
JP4652829B2 (ja) * 2005-01-26 2011-03-16 キヤノン株式会社 電子線露光装置およびデバイス製造方法
US7542013B2 (en) * 2005-01-31 2009-06-02 Asml Holding N.V. System and method for imaging enhancement via calculation of a customized optimal pupil field and illumination mode
EP1851784B8 (de) * 2005-02-11 2016-10-19 IMS Nanofabrication AG Vorrichtung zur belichtung mit geladenen teilchen mit elektrostatischer zonenplatte
JPWO2006104139A1 (ja) * 2005-03-29 2008-09-11 株式会社アドバンテスト マルチコラム型電子ビーム露光装置
US8890095B2 (en) * 2005-07-25 2014-11-18 Mapper Lithography Ip B.V. Reliability in a maskless lithography system
EP1943561A1 (de) * 2005-09-16 2008-07-16 Mapper Lithography IP B.V. Lithographiesystem und projektionsverfahren
TWI540399B (zh) * 2005-09-16 2016-07-01 瑪波微影Ip公司 微影系統及投射方法
US7709815B2 (en) * 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
WO2007048433A1 (en) * 2005-10-28 2007-05-03 Carl Zeiss Sms Gmbh Charged particle beam exposure system
KR100655165B1 (ko) * 2005-11-28 2007-02-28 서만승 마스크리스 리소그래피를 위한 점유면적기반 패턴 생성방법
TWI432908B (zh) 2006-03-10 2014-04-01 瑪波微影Ip公司 微影系統及投射方法
US20080083886A1 (en) * 2006-09-14 2008-04-10 3M Innovative Properties Company Optical system suitable for processing multiphoton curable photoreactive compositions
US7551359B2 (en) * 2006-09-14 2009-06-23 3M Innovative Properties Company Beam splitter apparatus and system
KR100868242B1 (ko) * 2007-05-14 2008-11-12 아엠텐 주식회사 마스크리스 리소그래피를 위한 인라인 가상마스킹 방법
KR100875900B1 (ko) * 2007-06-08 2008-12-26 재단법인서울대학교산학협력재단 마스크를 사용하지 아니하는 광유체적 리소그래피 시스템
TWI450047B (zh) 2007-07-13 2014-08-21 瑪波微影Ip公司 微影系統、夾緊方法及晶圓台
EP2017833A1 (de) 2007-07-16 2009-01-21 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Gescanntes Schreiben eines Belichtungsmusters auf einem Substrat
US8890094B2 (en) 2008-02-26 2014-11-18 Mapper Lithography Ip B.V. Projection lens arrangement
US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
JP2011517131A (ja) 2008-04-15 2011-05-26 マッパー・リソグラフィー・アイピー・ビー.ブイ. 小ビームブランカ構成体
US7851774B2 (en) * 2008-04-25 2010-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for direct writing to a wafer
US8253923B1 (en) 2008-09-23 2012-08-28 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
US8390786B2 (en) 2008-09-23 2013-03-05 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
US8390781B2 (en) 2008-09-23 2013-03-05 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
US8670106B2 (en) 2008-09-23 2014-03-11 Pinebrook Imaging, Inc. Optical imaging writer system
US8395752B2 (en) 2008-09-23 2013-03-12 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
JP5539406B2 (ja) 2009-02-22 2014-07-02 マッパー・リソグラフィー・アイピー・ビー.ブイ. リソグラフィマシン及び基板処理構成体
JP5680557B2 (ja) 2009-02-22 2015-03-04 マッパー・リソグラフィー・アイピー・ビー.ブイ. 荷電粒子リソグラフィ装置
KR101553802B1 (ko) 2009-02-22 2015-09-17 마퍼 리쏘그라피 아이피 비.브이. 진공 챔버에서 진공을 실현하기 위한 장치 및 방법
WO2010094724A1 (en) 2009-02-22 2010-08-26 Mapper Lithography Ip B.V. Charged particle lithography apparatus and method of generating vacuum in a vacuum chamber
CN102460632B (zh) * 2009-05-20 2015-11-25 迈普尔平版印刷Ip有限公司 产生二级图案以供光刻处理的方法和使用该方法的图案产生器
KR101636523B1 (ko) 2009-05-20 2016-07-06 마퍼 리쏘그라피 아이피 비.브이. 듀얼 패스 스캐닝
JP5801289B2 (ja) 2009-05-20 2015-10-28 マッパー・リソグラフィー・アイピー・ビー.ブイ. リソグラフシステムのためのパターンデータ変換
KR20120088780A (ko) * 2009-10-26 2012-08-08 마퍼 리쏘그라피 아이피 비.브이. 변조 디바이스를 갖는 하전 입자 다중-빔렛 리소그라피 시스템
US8952342B2 (en) 2009-12-17 2015-02-10 Mapper Lithography Ip B.V. Support and positioning structure, semiconductor equipment system and method for positioning
NL1037639C2 (en) * 2010-01-21 2011-07-25 Mapper Lithography Ip Bv Lithography system with lens rotation.
KR101250446B1 (ko) * 2010-03-22 2013-04-08 한국과학기술원 공간 광변조기를 이용한 리소그라피 방법
NL1037820C2 (en) 2010-03-22 2011-09-23 Mapper Lithography Ip Bv Lithography system, sensor, sensor surface element and method of manufacture.
JP5988537B2 (ja) * 2010-06-10 2016-09-07 株式会社ニコン 荷電粒子線露光装置及びデバイス製造方法
US8335999B2 (en) * 2010-06-11 2012-12-18 Orbotech Ltd. System and method for optical shearing
CN101969042B (zh) * 2010-08-27 2012-11-28 上海交通大学 基于喷墨印刷与激光干涉曝光的电路互联方法
TWI550679B (zh) * 2010-10-26 2016-09-21 瑪波微影Ip公司 調整裝置和使用其之帶電粒子多重小射束微影系統
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
WO2012062854A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
JP6133212B2 (ja) 2010-11-13 2017-05-24 マッパー・リソグラフィー・アイピー・ビー.ブイ. アパーチャアレイ冷却部を備えた荷電粒子リソグラフィシステム
EP2638559B1 (de) * 2010-11-13 2016-07-20 Mapper Lithography IP B.V. Modulator für geladene teilchenstrahlen
JP5882348B2 (ja) * 2010-11-13 2016-03-09 マッパー・リソグラフィー・アイピー・ビー.ブイ. マルチ小ビーム露光装置における2つの小ビーム間の距離を決定する方法
JP6049627B2 (ja) 2010-11-13 2016-12-21 マッパー・リソグラフィー・アイピー・ビー.ブイ. 中間チャンバを備えた荷電粒子リソグラフィシステム
US8895943B2 (en) 2010-12-14 2014-11-25 Mapper Lithography Ip B.V. Lithography system and method of processing substrates in such a lithography system
JP5902201B2 (ja) 2011-02-16 2016-04-13 マッパー・リソグラフィー・アイピー・ビー.ブイ. 磁気シールド用システム
JP2012204624A (ja) * 2011-03-25 2012-10-22 Canon Inc 描画装置、および、物品の製造方法
WO2012143541A1 (en) 2011-04-20 2012-10-26 Mapper Lithography Ip B.V. Arrangement of optical fibers, and a method of forming such arrangement
WO2012143548A2 (en) 2011-04-22 2012-10-26 Mapper Lithography Ip B.V. Network architecture and protocol for cluster of lithography machines
TWI506324B (zh) * 2011-04-26 2015-11-01 Mapper Lithography Ip Bv 光纖的配置及形成此種配置的方法
TWI486723B (zh) 2011-04-28 2015-06-01 瑪波微影Ip公司 在微影系統中處理基板的方法
RU2013156037A (ru) 2011-05-18 2015-06-27 МЭППЕР ЛИТОГРАФИ АйПи Б.В. Способ для разбиения изображения для использования в устройстве для многопучковой литографии
WO2013045636A2 (en) 2011-09-28 2013-04-04 Mapper Lithography Ip B.V. Plasma generator
JP6025012B2 (ja) * 2011-12-05 2016-11-16 株式会社リコー レーザ書き換え装置
USRE49732E1 (en) * 2012-03-08 2023-11-21 Asml Netherlands B.V. Charged particle lithography system with alignment sensor and beam measurement sensor
CN104321701B (zh) 2012-03-20 2017-04-12 迈普尔平版印刷Ip有限公司 用于运输自由基的装置和方法
NL2010759C2 (en) 2012-05-14 2015-08-25 Mapper Lithography Ip Bv Modulation device and power supply arrangement.
EP2850635B1 (de) 2012-05-14 2016-04-27 Mapper Lithography IP B.V. Ladungsträger-lithografiesystem mit mehreren teilstrahlen und kühlanordnungsherstellungsverfahren
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US9653259B2 (en) * 2012-05-14 2017-05-16 Mapper Lithography Ip B.V. Method for determining a beamlet position and method for determining a distance between two beamlets in a multi-beamlet exposure apparatus
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
NL2010797C2 (en) 2012-05-14 2014-08-21 Mapper Lithography Ip Bv Charged particle lithography system and beam generator.
WO2013184700A1 (en) * 2012-06-04 2013-12-12 Pinebrook Imaging, Inc. An optical projection array exposure system
KR102055889B1 (ko) * 2012-10-24 2019-12-13 엘지디스플레이 주식회사 마스크리스 노광장치 및 노광방법
NL2012052A (en) * 2013-01-29 2014-08-04 Asml Netherlands Bv A radiation modulator for a lithography apparatus, a lithography apparatus, a method of modulating radiation for use in lithography, and a device manufacturing method.
KR101490460B1 (ko) * 2013-04-29 2015-02-10 선문대학교 산학협력단 광학 장치
NL2010760C2 (en) 2013-05-03 2014-11-04 Mapper Lithography Ip Bv Beam grid layout.
KR102151254B1 (ko) 2013-08-19 2020-09-03 삼성디스플레이 주식회사 노광장치 및 그 방법
US9922801B2 (en) 2013-08-23 2018-03-20 Mapper Lithography Ip B.V. Drying apparatus for use in a lithography system
WO2015071440A1 (en) 2013-11-14 2015-05-21 Mapper Lithography Ip B.V. Electrode cooling arrangement
US8975601B1 (en) 2013-11-25 2015-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for electron beam lithography
US8969836B1 (en) * 2013-11-26 2015-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for electron beam lithography
NL2014029B1 (en) 2013-12-30 2016-01-08 Mapper Lithography Ip Bv Cathode arrangement, electron gun, and lithography system comprising such electron gun.
US10216087B2 (en) 2014-06-13 2019-02-26 Intel Corporation Ebeam universal cutter
JP2017513036A (ja) 2014-11-14 2017-05-25 マッパー・リソグラフィー・アイピー・ビー.ブイ. 貨物固定システムおよびリソグラフィシステム内で基板を移送するための方法
NL2013801B1 (en) 2014-11-14 2016-10-10 Univ Delft Tech Device and method for generating charged particle beam pulses.
JP2017535821A (ja) * 2014-11-27 2017-11-30 カール・ツァイス・エスエムティー・ゲーエムベーハー 複数の個々に制御可能な書込ヘッドを含むリソグラフィ装置
CN104708196B (zh) * 2015-01-21 2017-05-10 长春理工大学 一种增大光电材料有效感光面积的制备方法
US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
KR20180016423A (ko) 2015-06-08 2018-02-14 가부시키가이샤 니콘 하전 입자 빔 노광 장치 및 디바이스 제조 방법
TWI547222B (zh) * 2015-09-03 2016-08-21 旭東機械工業股份有限公司 適用傳統顯像型液態防焊油墨之雷射直接曝光設備及其方法
CN105467750B (zh) * 2015-12-11 2019-12-31 四川云盾光电科技有限公司 一种基于微棱镜阵列的微结构成形方法
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
US10748734B2 (en) 2016-09-05 2020-08-18 Stellarray, Inc. Multi-cathode EUV and soft x-ray source
WO2018074306A1 (ja) 2016-10-17 2018-04-26 株式会社ニコン 露光システム及びリソグラフィシステム
WO2019064508A1 (ja) * 2017-09-29 2019-04-04 株式会社ニコン 電子ビーム装置及び露光方法、並びにデバイス製造方法
JP6652618B2 (ja) * 2018-10-11 2020-02-26 株式会社アドテックエンジニアリング 照度割合変更方法及び露光方法
NL2022156B1 (en) 2018-12-10 2020-07-02 Asml Netherlands Bv Plasma source control circuit
CN116262304A (zh) * 2021-12-14 2023-06-16 上海新微技术研发中心有限公司 基于激光刻蚀工艺的器件结构的制备方法
CN114488715B (zh) * 2022-02-18 2023-09-29 西湖大学 一种光纤阵列光刻机

Family Cites Families (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710237A (en) * 1980-06-23 1982-01-19 Toshiba Corp Electron beam exposing apparatus
JPS57176721A (en) * 1981-04-22 1982-10-30 Agency Of Ind Science & Technol Contraction projecting and exposing device using optical fiber
JPS57204131A (en) * 1981-06-10 1982-12-14 Toshiba Mach Co Ltd Electron-ray drawing device
US4730198A (en) * 1984-11-26 1988-03-08 American Telephone And Telegraph Company, At&T Bell Laboratories Aligning arrays of optoelectronic devices to arrays of optical fibers
JPS62155517A (ja) * 1985-12-27 1987-07-10 Canon Inc パターン描画装置及び方法
US4980567A (en) * 1988-03-30 1990-12-25 Fujitsu Limited Charged particle beam exposure system using line beams
US4900126A (en) * 1988-06-30 1990-02-13 American Telephone & Telegraph Co. Bonded array of transmission media
JPH0312542A (ja) * 1989-06-08 1991-01-21 Fujitsu Ltd マスク表面検査装置
JPH03127816A (ja) * 1989-10-13 1991-05-30 Canon Inc マルチ電子源
AU7166291A (en) * 1989-12-22 1991-07-24 Manufacturing Sciences, Inc. Programmable masking apparatus
JP2523931B2 (ja) * 1990-04-16 1996-08-14 富士通株式会社 ブランキングアパ―チャアレ―の製造方法
US5149976A (en) * 1990-08-31 1992-09-22 Hughes Aircraft Company Charged particle beam pattern generation apparatus and method
JP3241759B2 (ja) * 1991-09-20 2001-12-25 株式会社日立製作所 荷電粒子露光装置
JPH0582069A (ja) * 1991-09-25 1993-04-02 Hitachi Ltd 電子線描画装置
JP3191998B2 (ja) * 1992-09-01 2001-07-23 富士ゼロックス株式会社 光通信用波長多重送受信器
JPH06236842A (ja) * 1993-02-09 1994-08-23 Hitachi Ltd 電子ビーム露光装置
US5640227A (en) * 1993-12-06 1997-06-17 Nikon Corporation Exposure apparatus and exposure method for minimizing defocusing of the transferred pattern
EP1369895B1 (de) 1996-03-04 2012-05-09 Canon Kabushiki Kaisha Elektronenstrahl Belichtungsgerät und Herstellungsverfahren und -vorrichtung
US5691541A (en) * 1996-05-14 1997-11-25 The Regents Of The University Of California Maskless, reticle-free, lithography
JP3796317B2 (ja) 1996-06-12 2006-07-12 キヤノン株式会社 電子ビーム露光方法及びそれを用いたデバイス製造方法
US5870176A (en) * 1996-06-19 1999-02-09 Sandia Corporation Maskless lithography
JP3210251B2 (ja) * 1996-07-09 2001-09-17 シャープ株式会社 レーザーパターニング装置
US6312134B1 (en) * 1996-07-25 2001-11-06 Anvik Corporation Seamless, maskless lithography system using spatial light modulator
JP3832914B2 (ja) * 1997-01-16 2006-10-11 キヤノン株式会社 電子ビーム露光装置及び該装置を用いたデバイス製造方法
US5981954A (en) 1997-01-16 1999-11-09 Canon Kabushiki Kaisha Electron beam exposure apparatus
US6498349B1 (en) * 1997-02-05 2002-12-24 Ut-Battelle Electrostatically focused addressable field emission array chips (AFEA's) for high-speed massively parallel maskless digital E-beam direct write lithography and scanning electron microscopy
US5914709A (en) * 1997-03-14 1999-06-22 Poa Sana, Llc User input device for a computer system
US6014200A (en) * 1998-02-24 2000-01-11 Nikon Corporation High throughput electron beam lithography system
SE9800665D0 (sv) 1998-03-02 1998-03-02 Micronic Laser Systems Ab Improved method for projection printing using a micromirror SLM
US6157039A (en) * 1998-05-07 2000-12-05 Etec Systems, Inc. Charged particle beam illumination of blanking aperture array
US6251550B1 (en) * 1998-07-10 2001-06-26 Ball Semiconductor, Inc. Maskless photolithography system that digitally shifts mask data responsive to alignment data
US6166369A (en) * 1998-11-25 2000-12-26 Intel Corporation Microcollector for photosensitive devices using sol-gel
JP2000173522A (ja) * 1998-12-08 2000-06-23 Toshiba Corp 荷電ビーム描画装置
JP2000252198A (ja) * 1999-03-02 2000-09-14 Advantest Corp 荷電ビーム露光装置
JP2001076990A (ja) * 1999-08-31 2001-03-23 Canon Inc 荷電粒子線露光装置及びその制御方法
SE516914C2 (sv) 1999-09-09 2002-03-19 Micronic Laser Systems Ab Metoder och rastrerare för högpresterande mönstergenerering
JP3780769B2 (ja) * 1999-09-28 2006-05-31 住友電気工業株式会社 光通信装置
JP2001126972A (ja) * 1999-10-25 2001-05-11 Hitachi Ltd 電子ビーム描画装置および電子ビームを用いた描画方法
WO2001035165A1 (en) * 1999-11-07 2001-05-17 Ion Diagnostics, Inc. Data path design for multiple electron beam lithography system
CN2421670Y (zh) * 1999-11-30 2001-02-28 中国科学院光电技术研究所 亚微米光刻机光学预对准装置
JP2001168016A (ja) * 1999-12-13 2001-06-22 Canon Inc 荷電粒子線露光装置と露光システム及びそれらの制御方法及びデバイス製造方法
JP2001168017A (ja) * 1999-12-13 2001-06-22 Canon Inc 荷電粒子線露光装置、荷電粒子線露光方法及び制御データの決定方法、該方法を適用したデバイスの製造方法。
JP2001185752A (ja) * 1999-12-24 2001-07-06 Nippon Telegr & Teleph Corp <Ntt> 半導体装置とそれを用いた光信号入出力装置
US6379867B1 (en) * 2000-01-10 2002-04-30 Ball Semiconductor, Inc. Moving exposure system and method for maskless lithography system
KR20030028460A (ko) 2000-04-04 2003-04-08 주식회사 아도반테스토 다축전자렌즈를 이용한 멀티 빔 노광 장치,다축전자렌즈의 제조방법, 반도체소자 제조방법
KR100465117B1 (ko) 2000-04-04 2005-01-05 주식회사 아도반테스토 다축전자렌즈를 이용한 멀티빔 노광장치, 복수의 전자빔을집속하는 다축전자렌즈, 반도체소자 제조방법
WO2001075947A1 (en) 2000-04-04 2001-10-11 Advantest Corporation Multibeam exposure apparatus comprising multiaxis electron lens, multiaxis electron lens for focusing electron beams, and method for manufacturing semiconductor device
JP4330762B2 (ja) * 2000-04-21 2009-09-16 富士フイルム株式会社 マルチビーム露光装置
US6828574B1 (en) * 2000-08-08 2004-12-07 Applied Materials, Inc. Modulator driven photocathode electron beam generator
JP3577289B2 (ja) * 2000-08-31 2004-10-13 日本電信電話株式会社 光信号処理方法及び光信号処理装置
JP4355446B2 (ja) 2000-12-28 2009-11-04 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム成形部材
JP2002217089A (ja) 2001-01-18 2002-08-02 Advantest Corp 電子ビーム偏向装置、電子ビーム偏向装置の製造方法、及び電子ビーム露光装置
JP4246401B2 (ja) 2001-01-18 2009-04-02 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム偏向装置
US6724002B2 (en) * 2001-01-31 2004-04-20 Applied Materials, Inc. Multiple electron beam lithography system with multiple beam modulated laser illumination
JP3896794B2 (ja) * 2001-02-22 2007-03-22 日本電気株式会社 光ファイバアレイ付きテープ光ファイバコード
US6563124B2 (en) * 2001-03-21 2003-05-13 Applied Materials, Inc. Electron beam apparatus having traversing circuit boards
US20020145113A1 (en) * 2001-04-09 2002-10-10 Applied Materials, Inc. Optical signal transmission for electron beam imaging apparatus
JP2003249675A (ja) * 2002-02-26 2003-09-05 Sumitomo Electric Ind Ltd 受光素子アレイ
US7300728B2 (en) * 2002-03-01 2007-11-27 Kodak Graphic Communications Canada Company Processor unit with provision for automated control of processing parameters
JP3940310B2 (ja) * 2002-04-04 2007-07-04 株式会社日立ハイテクノロジーズ 電子ビーム描画方法及び描画装置、並びにこれを用いた半導体製造方法
JP2003318478A (ja) * 2002-04-26 2003-11-07 Sumitomo Electric Ind Ltd 光通信装置
JP2003337427A (ja) * 2002-05-20 2003-11-28 Fuji Photo Film Co Ltd 露光装置
WO2004013692A2 (en) * 2002-08-02 2004-02-12 Massachusetts Institute Of Technology System and method for maskless lithography using an array of sources and an array of focusing elements
KR101368027B1 (ko) * 2002-10-25 2014-02-26 마퍼 리쏘그라피 아이피 비.브이. 리소그라피 장치
US6803582B2 (en) * 2002-11-29 2004-10-12 Oregon Health & Science University One dimensional beam blanker array
JP4652829B2 (ja) * 2005-01-26 2011-03-16 キヤノン株式会社 電子線露光装置およびデバイス製造方法

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