ATE557425T1 - Verfahren zum trennen von materialschichten - Google Patents
Verfahren zum trennen von materialschichtenInfo
- Publication number
- ATE557425T1 ATE557425T1 AT05731585T AT05731585T ATE557425T1 AT E557425 T1 ATE557425 T1 AT E557425T1 AT 05731585 T AT05731585 T AT 05731585T AT 05731585 T AT05731585 T AT 05731585T AT E557425 T1 ATE557425 T1 AT E557425T1
- Authority
- AT
- Austria
- Prior art keywords
- material layers
- separating material
- substrate
- layer
- sections
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0732—Shaping the laser spot into a rectangular shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0838—Devices involving movement of the workpiece in at least one axial direction by using an endless conveyor belt
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/11—Separation of active layers from substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Led Devices (AREA)
- Laser Beam Processing (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Lasers (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Element Separation (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US55745004P | 2004-03-29 | 2004-03-29 | |
| US11/008,589 US7202141B2 (en) | 2004-03-29 | 2004-12-09 | Method of separating layers of material |
| PCT/US2005/010412 WO2005094320A2 (en) | 2004-03-29 | 2005-03-29 | Method of separating layers of material using a laser beam |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE557425T1 true ATE557425T1 (de) | 2012-05-15 |
Family
ID=35061103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT05731585T ATE557425T1 (de) | 2004-03-29 | 2005-03-29 | Verfahren zum trennen von materialschichten |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US7202141B2 (de) |
| EP (1) | EP1735837B1 (de) |
| JP (1) | JP5053076B2 (de) |
| KR (1) | KR100849779B1 (de) |
| CN (1) | CN1973375B (de) |
| AT (1) | ATE557425T1 (de) |
| TW (1) | TWI278923B (de) |
| WO (1) | WO2005094320A2 (de) |
Families Citing this family (164)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040140474A1 (en) * | 2002-06-25 | 2004-07-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device, method for fabricating the same and method for bonding the same |
| US8319150B2 (en) * | 2004-07-09 | 2012-11-27 | General Electric Company | Continuous motion laser shock peening |
| US7238589B2 (en) * | 2004-11-01 | 2007-07-03 | International Business Machines Corporation | In-place bonding of microstructures |
| US20060124941A1 (en) * | 2004-12-13 | 2006-06-15 | Lee Jae S | Thin gallium nitride light emitting diode device |
| US7378288B2 (en) * | 2005-01-11 | 2008-05-27 | Semileds Corporation | Systems and methods for producing light emitting diode array |
| KR100638732B1 (ko) * | 2005-04-15 | 2006-10-30 | 삼성전기주식회사 | 수직구조 질화물 반도체 발광소자의 제조방법 |
| TWI248222B (en) * | 2005-05-12 | 2006-01-21 | Univ Nat Central | Light emitting diode and manufacturing method thereof |
| US7687322B1 (en) * | 2005-10-11 | 2010-03-30 | SemiLEDs Optoelectronics Co., Ltd. | Method for removing semiconductor street material |
| WO2007050736A2 (en) * | 2005-10-26 | 2007-05-03 | Velox Semiconductor Corporation | Vertical structure semiconductor devices and method of fabricating the same |
| US7471455B2 (en) * | 2005-10-28 | 2008-12-30 | Cymer, Inc. | Systems and methods for generating laser light shaped as a line beam |
| JP2007184426A (ja) * | 2006-01-06 | 2007-07-19 | Shinko Electric Ind Co Ltd | 半導体装置の製造方法 |
| KR100735488B1 (ko) * | 2006-02-03 | 2007-07-04 | 삼성전기주식회사 | 질화갈륨계 발광다이오드 소자의 제조방법 |
| US7928462B2 (en) | 2006-02-16 | 2011-04-19 | Lg Electronics Inc. | Light emitting device having vertical structure, package thereof and method for manufacturing the same |
| US8624157B2 (en) * | 2006-05-25 | 2014-01-07 | Electro Scientific Industries, Inc. | Ultrashort laser pulse wafer scribing |
| EP2458652B1 (de) | 2006-06-23 | 2023-08-02 | LG Electronics Inc. | Verfahren zur Herstellung lichtemittierender Dioden mit vertikaler Topologie |
| TWI298513B (en) * | 2006-07-03 | 2008-07-01 | Au Optronics Corp | Method for forming an array substrate |
| US20080042149A1 (en) * | 2006-08-21 | 2008-02-21 | Samsung Electro-Mechanics Co., Ltd. | Vertical nitride semiconductor light emitting diode and method of manufacturing the same |
| US20080054291A1 (en) * | 2006-08-31 | 2008-03-06 | Samsung Electronics Co., Ltd. | Vertical semiconductor light-emitting device and method of manufacturing the same |
| US20080070378A1 (en) * | 2006-09-19 | 2008-03-20 | Jong-Souk Yeo | Dual laser separation of bonded wafers |
| WO2008036837A2 (en) * | 2006-09-20 | 2008-03-27 | The Board Of Trustees Of The University Of Illinois | Release strategies for making transferable semiconductor structures, devices and device components |
| US8921204B2 (en) | 2006-10-11 | 2014-12-30 | SemiLEDs Optoelectronics Co., Ltd. | Method for fabricating semiconductor dice by separating a substrate from semiconductor structures using multiple laser pulses |
| US7508494B2 (en) * | 2006-12-22 | 2009-03-24 | Asml Netherlands B.V. | Lithographic apparatus and a subtrate table for exciting a shockwave in a substrate |
| US7727790B2 (en) * | 2007-01-30 | 2010-06-01 | Goldeneye, Inc. | Method for fabricating light emitting diodes |
| US20080220590A1 (en) * | 2007-03-06 | 2008-09-11 | Texas Instruments Incorporated | Thin wafer dicing using UV laser |
| KR101364719B1 (ko) * | 2007-03-29 | 2014-02-20 | 서울바이오시스 주식회사 | 수직형 발광 다이오드 제조방법 |
| US20080258165A1 (en) * | 2007-04-23 | 2008-10-23 | Goldeneye, Inc. | Light emitting diode chip |
| US20080280454A1 (en) * | 2007-05-09 | 2008-11-13 | Ya-Li Chen | Wafer recycling method using laser films stripping |
| CN101086083B (zh) * | 2007-06-08 | 2011-05-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种制备三族氮化物衬底的方法 |
| US20090140279A1 (en) * | 2007-12-03 | 2009-06-04 | Goldeneye, Inc. | Substrate-free light emitting diode chip |
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| TWI384658B (zh) * | 2008-05-08 | 2013-02-01 | High Power Optoelectronics Inc | Laser stripping method |
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| KR101030068B1 (ko) | 2002-07-08 | 2011-04-19 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자 |
| KR100495215B1 (ko) | 2002-12-27 | 2005-06-14 | 삼성전기주식회사 | 수직구조 갈륨나이트라이드 발광다이오드 및 그 제조방법 |
| KR20060059891A (ko) | 2003-06-04 | 2006-06-02 | 유명철 | 수직 구조 화합물 반도체 디바이스의 제조 방법 |
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| US6949449B2 (en) * | 2003-07-11 | 2005-09-27 | Electro Scientific Industries, Inc. | Method of forming a scribe line on a ceramic substrate |
| US7015117B2 (en) * | 2003-07-14 | 2006-03-21 | Allegis Technologies, Inc. | Methods of processing of gallium nitride |
| WO2007136183A1 (en) | 2006-05-18 | 2007-11-29 | Phicom Corporation | Method of repairing a polymer mask |
| EP2458652B1 (de) | 2006-06-23 | 2023-08-02 | LG Electronics Inc. | Verfahren zur Herstellung lichtemittierender Dioden mit vertikaler Topologie |
| KR20070122120A (ko) | 2006-06-23 | 2007-12-28 | 엘지전자 주식회사 | 수직형 발광 다이오드의 제조방법 |
| KR100724540B1 (ko) | 2006-12-26 | 2007-06-04 | (주)큐엠씨 | 레이저 빔 전달 시스템 및 그 방법과 레이저 리프트 오프방법 |
-
2004
- 2004-12-09 US US11/008,589 patent/US7202141B2/en not_active Expired - Lifetime
-
2005
- 2005-03-25 TW TW094109291A patent/TWI278923B/zh not_active IP Right Cessation
- 2005-03-29 KR KR1020067022455A patent/KR100849779B1/ko not_active Expired - Lifetime
- 2005-03-29 AT AT05731585T patent/ATE557425T1/de active
- 2005-03-29 CN CN2005800152319A patent/CN1973375B/zh not_active Expired - Lifetime
- 2005-03-29 WO PCT/US2005/010412 patent/WO2005094320A2/en not_active Ceased
- 2005-03-29 EP EP05731585A patent/EP1735837B1/de not_active Expired - Lifetime
- 2005-03-29 JP JP2007506445A patent/JP5053076B2/ja not_active Expired - Lifetime
- 2005-08-30 US US11/215,248 patent/US7241667B2/en not_active Expired - Lifetime
-
2007
- 2007-06-13 US US11/762,336 patent/US7846847B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20070298587A1 (en) | 2007-12-27 |
| WO2005094320A3 (en) | 2006-09-28 |
| US20060003553A1 (en) | 2006-01-05 |
| US7202141B2 (en) | 2007-04-10 |
| EP1735837A2 (de) | 2006-12-27 |
| KR20070013288A (ko) | 2007-01-30 |
| EP1735837A4 (de) | 2009-11-04 |
| KR100849779B1 (ko) | 2008-07-31 |
| JP2007534164A (ja) | 2007-11-22 |
| US20050227455A1 (en) | 2005-10-13 |
| TW200537606A (en) | 2005-11-16 |
| EP1735837B1 (de) | 2012-05-09 |
| WO2005094320A2 (en) | 2005-10-13 |
| CN1973375A (zh) | 2007-05-30 |
| CN1973375B (zh) | 2012-07-04 |
| US7846847B2 (en) | 2010-12-07 |
| TWI278923B (en) | 2007-04-11 |
| JP5053076B2 (ja) | 2012-10-17 |
| US7241667B2 (en) | 2007-07-10 |
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