ATE99455T1 - Programmierbare aktive oder passive zellenanordnung. - Google Patents

Programmierbare aktive oder passive zellenanordnung.

Info

Publication number
ATE99455T1
ATE99455T1 AT88310168T AT88310168T ATE99455T1 AT E99455 T1 ATE99455 T1 AT E99455T1 AT 88310168 T AT88310168 T AT 88310168T AT 88310168 T AT88310168 T AT 88310168T AT E99455 T1 ATE99455 T1 AT E99455T1
Authority
AT
Austria
Prior art keywords
pnp
region
emitter
regions
cell arrangement
Prior art date
Application number
AT88310168T
Other languages
English (en)
Inventor
Piccolo Giovanni Giannella
Original Assignee
Exar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exar Corp filed Critical Exar Corp
Application granted granted Critical
Publication of ATE99455T1 publication Critical patent/ATE99455T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/901—Masterslice integrated circuits comprising bipolar technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Micro-Organisms Or Cultivation Processes Thereof (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
  • Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Memories (AREA)
AT88310168T 1987-11-19 1988-10-28 Programmierbare aktive oder passive zellenanordnung. ATE99455T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/122,971 US4851893A (en) 1987-11-19 1987-11-19 Programmable active/passive cell structure
EP88310168A EP0317108B1 (de) 1987-11-19 1988-10-28 Programmierbare aktive oder passive Zellenanordnung

Publications (1)

Publication Number Publication Date
ATE99455T1 true ATE99455T1 (de) 1994-01-15

Family

ID=22405978

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88310168T ATE99455T1 (de) 1987-11-19 1988-10-28 Programmierbare aktive oder passive zellenanordnung.

Country Status (6)

Country Link
US (1) US4851893A (de)
EP (1) EP0317108B1 (de)
JP (1) JP2513813B2 (de)
KR (1) KR920003801B1 (de)
AT (1) ATE99455T1 (de)
DE (1) DE3886703T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2739958B2 (ja) * 1988-06-28 1998-04-15 株式会社東芝 スタンダードセル
US5021856A (en) * 1989-03-15 1991-06-04 Plessey Overseas Limited Universal cell for bipolar NPN and PNP transistors and resistive elements
US5440153A (en) * 1994-04-01 1995-08-08 United Technologies Corporation Array architecture with enhanced routing for linear asics

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL162511C (nl) * 1969-01-11 1980-05-16 Philips Nv Geintegreerde halfgeleiderschakeling met een laterale transistor en werkwijze voor het vervaardigen van de geintegreerde halfgeleiderschakeling.
US4100563A (en) * 1976-09-27 1978-07-11 Motorola, Inc. Semiconductor magnetic transducers
US4228451A (en) * 1978-07-21 1980-10-14 Monolithic Memories, Inc. High resistivity semiconductor resistor device
JPS5617067A (en) * 1979-07-20 1981-02-18 Hitachi Ltd Semiconductor switch
US4288708A (en) * 1980-05-01 1981-09-08 International Business Machines Corp. Differentially modulated avalanche area magnetically sensitive transistor
US4417265A (en) * 1981-03-26 1983-11-22 National Semiconductor Corporation Lateral PNP power transistor
JPS58147064A (ja) * 1982-02-25 1983-09-01 Fuji Electric Co Ltd トランジスタ
US4513306A (en) * 1982-12-27 1985-04-23 Motorola, Inc. Current ratioing device structure
JPS59177944A (ja) * 1983-03-28 1984-10-08 Hitachi Ltd 半導体集積回路装置
JPS61188960A (ja) * 1985-02-18 1986-08-22 Fujitsu Ltd 半導体集積回路装置
JPS61248440A (ja) * 1985-04-25 1986-11-05 Nec Corp マスタ−スライス方式論理集積回路
US4684970A (en) * 1985-07-29 1987-08-04 Rca Corporation High current lateral transistor structure
KR870009476A (ko) * 1986-03-31 1987-10-27 이그자 코오포레이숀 프로그램 가능 트랜지스터 및 그의 제조방법

Also Published As

Publication number Publication date
EP0317108A3 (en) 1990-05-23
KR920003801B1 (ko) 1992-05-14
JPH021165A (ja) 1990-01-05
DE3886703T2 (de) 1994-07-07
DE3886703D1 (de) 1994-02-10
EP0317108A2 (de) 1989-05-24
KR890008996A (ko) 1989-07-13
US4851893A (en) 1989-07-25
JP2513813B2 (ja) 1996-07-03
EP0317108B1 (de) 1993-12-29

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee