BE833455A - Procede de fabrication de transistors monolithiques complementaires, et produits obtenus - Google Patents

Procede de fabrication de transistors monolithiques complementaires, et produits obtenus

Info

Publication number
BE833455A
BE833455A BE160072A BE160072A BE833455A BE 833455 A BE833455 A BE 833455A BE 160072 A BE160072 A BE 160072A BE 160072 A BE160072 A BE 160072A BE 833455 A BE833455 A BE 833455A
Authority
BE
Belgium
Prior art keywords
manufacturing process
products obtained
complementary
transistors
monolithic transistors
Prior art date
Application number
BE160072A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE833455A publication Critical patent/BE833455A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
BE160072A 1974-09-19 1975-09-16 Procede de fabrication de transistors monolithiques complementaires, et produits obtenus BE833455A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50757074A 1974-09-19 1974-09-19

Publications (1)

Publication Number Publication Date
BE833455A true BE833455A (fr) 1976-01-16

Family

ID=24019174

Family Applications (1)

Application Number Title Priority Date Filing Date
BE160072A BE833455A (fr) 1974-09-19 1975-09-16 Procede de fabrication de transistors monolithiques complementaires, et produits obtenus

Country Status (10)

Country Link
JP (1) JPS5157172A (fr)
BE (1) BE833455A (fr)
CA (1) CA1038968A (fr)
DE (1) DE2541161A1 (fr)
ES (1) ES440909A0 (fr)
FR (1) FR2285717A1 (fr)
GB (1) GB1525247A (fr)
IT (1) IT1042581B (fr)
NL (1) NL7510994A (fr)
SE (1) SE403214B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55143064A (en) * 1979-04-24 1980-11-08 Nec Corp Semiconductor device
JPS57106046A (en) * 1980-12-23 1982-07-01 Toshiba Corp Manufacture of semiconductor device
JPH0713969B2 (ja) * 1986-01-13 1995-02-15 三洋電機株式会社 縦型ｐｎｐトランジスタ
GB2186117B (en) * 1986-01-30 1989-11-01 Sgs Microelettronica Spa Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication
EP0347550A3 (fr) * 1988-06-21 1991-08-28 Texas Instruments Incorporated Procédé pour l'intégration de transistors bipolaires isolés verticaux et à grand bêta

Also Published As

Publication number Publication date
CA1038968A (fr) 1978-09-19
GB1525247A (en) 1978-09-20
FR2285717A1 (fr) 1976-04-16
SE403214B (sv) 1978-07-31
FR2285717B1 (fr) 1980-04-30
DE2541161A1 (de) 1976-04-01
NL7510994A (nl) 1976-03-23
SE7510075L (sv) 1976-03-22
ES440909A0 (es) 1977-03-16
IT1042581B (it) 1980-01-30
JPS5157172A (fr) 1976-05-19

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