Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
  • H10D84/67—Complementary BJTs
  • H10D84/673—Vertical complementary BJTs
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/01—Manufacture or treatment
  • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
  • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
  • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/01—Manufacture or treatment
  • H10D84/02—Manufacture or treatment characterised by using material-based technologies
  • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
  • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

• Bipolar Integrated Circuits (AREA)
• Bipolar Transistors (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=24019174

Family Applications (1)

Country Status (10)

Cited By (3)

Families Citing this family (2)

• 1975
  • 1975-08-27 CA CA234,241A patent/CA1038968A/fr not_active Expired
  • 1975-09-10 SE SE7510075A patent/SE403214B/xx unknown
  • 1975-09-16 IT IT27273/75A patent/IT1042581B/it active
  • 1975-09-16 BE BE160072A patent/BE833455A/fr unknown
  • 1975-09-16 DE DE19752541161 patent/DE2541161A1/de not_active Withdrawn
  • 1975-09-18 JP JP50112210A patent/JPS5157172A/ja active Pending
  • 1975-09-18 NL NL7510994A patent/NL7510994A/xx not_active Application Discontinuation
  • 1975-09-18 FR FR7528624A patent/FR2285717A1/fr active Granted
  • 1975-09-19 GB GB38498/75A patent/GB1525247A/en not_active Expired
• 1976
  • 1976-01-23 ES ES440909A patent/ES440909A0/es active Pending

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