BG106739A - Метод за образуване на силициева наноструктура, силициева квантова проводима решетка и устройства базиращи се на тях - Google Patents

Метод за образуване на силициева наноструктура, силициева квантова проводима решетка и устройства базиращи се на тях

Info

Publication number
BG106739A
BG106739A BG106739A BG10673902A BG106739A BG 106739 A BG106739 A BG 106739A BG 106739 A BG106739 A BG 106739A BG 10673902 A BG10673902 A BG 10673902A BG 106739 A BG106739 A BG 106739A
Authority
BG
Bulgaria
Prior art keywords
silicon
relief
wave
ion
silicone
Prior art date
Application number
BG106739A
Other languages
Bulgarian (bg)
English (en)
Inventor
Original Assignee
Sceptre Electronics Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sceptre Electronics Limited filed Critical Sceptre Electronics Limited
Publication of BG106739A publication Critical patent/BG106739A/xx

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/812—Single quantum well structures
    • H10D62/813—Quantum wire structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
BG106739A 1999-11-25 2002-05-27 Метод за образуване на силициева наноструктура, силициева квантова проводима решетка и устройства базиращи се на тях BG106739A (bg)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU99124768/28A RU2173003C2 (ru) 1999-11-25 1999-11-25 Способ образования кремниевой наноструктуры, решетки кремниевых квантовых проводков и основанных на них устройств
PCT/IB2000/001397 WO2001039259A1 (en) 1999-11-25 2000-10-02 Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon

Publications (1)

Publication Number Publication Date
BG106739A true BG106739A (bg) 2003-08-29

Family

ID=20227346

Family Applications (1)

Application Number Title Priority Date Filing Date
BG106739A BG106739A (bg) 1999-11-25 2002-05-27 Метод за образуване на силициева наноструктура, силициева квантова проводима решетка и устройства базиращи се на тях

Country Status (23)

Country Link
US (1) US6274007B1 (cs)
EP (1) EP1104011A1 (cs)
JP (1) JP2001156050A (cs)
KR (1) KR20020069195A (cs)
CN (1) CN1399791A (cs)
AU (1) AU7547400A (cs)
BG (1) BG106739A (cs)
BR (1) BR0016095A (cs)
CA (1) CA2392307A1 (cs)
CZ (1) CZ20021824A3 (cs)
EE (1) EE200200261A (cs)
HR (1) HRP20020459A2 (cs)
HU (1) HUP0203517A2 (cs)
IL (1) IL149832A0 (cs)
IS (1) IS6393A (cs)
MX (1) MXPA02005281A (cs)
NO (1) NO20022427L (cs)
PL (1) PL355890A1 (cs)
RU (1) RU2173003C2 (cs)
SK (1) SK7442002A3 (cs)
WO (1) WO2001039259A1 (cs)
YU (1) YU38202A (cs)
ZA (1) ZA200204822B (cs)

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CA2392307A1 (en) 2001-05-31
IL149832A0 (en) 2002-11-10
BR0016095A (pt) 2004-03-23
NO20022427D0 (no) 2002-05-22
AU7547400A (en) 2001-06-04
CZ20021824A3 (cs) 2004-10-13
YU38202A (sh) 2006-08-17
RU2173003C2 (ru) 2001-08-27
JP2001156050A (ja) 2001-06-08
SK7442002A3 (en) 2003-05-02
IS6393A (is) 2002-05-24
MXPA02005281A (es) 2006-02-10
NO20022427L (no) 2002-06-25
EP1104011A1 (en) 2001-05-30
HUP0203517A2 (en) 2003-07-28
US6274007B1 (en) 2001-08-14
PL355890A1 (pl) 2004-05-31
KR20020069195A (ko) 2002-08-29
EE200200261A (et) 2003-08-15
HRP20020459A2 (en) 2005-10-31
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CN1399791A (zh) 2003-02-26
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