BRPI0810855A2 - Eletrodo frontal incluindo revestimento condutivo transparente sobre substrato de vidro padronizado para uso em dispositivo fotovoltaico e processo de fabricação do mesmo - Google Patents

Eletrodo frontal incluindo revestimento condutivo transparente sobre substrato de vidro padronizado para uso em dispositivo fotovoltaico e processo de fabricação do mesmo

Info

Publication number
BRPI0810855A2
BRPI0810855A2 BRPI0810855-2A2A BRPI0810855A BRPI0810855A2 BR PI0810855 A2 BRPI0810855 A2 BR PI0810855A2 BR PI0810855 A BRPI0810855 A BR PI0810855A BR PI0810855 A2 BRPI0810855 A2 BR PI0810855A2
Authority
BR
Brazil
Prior art keywords
glass substrate
manufacturing process
photovoltaic device
front electrode
electrode including
Prior art date
Application number
BRPI0810855-2A2A
Other languages
English (en)
Inventor
Yiwei Lu
Willem Den Boer
Original Assignee
Guardian Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guardian Industries filed Critical Guardian Industries
Publication of BRPI0810855A2 publication Critical patent/BRPI0810855A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H10F19/807—Double-glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
BRPI0810855-2A2A 2007-04-26 2008-02-29 Eletrodo frontal incluindo revestimento condutivo transparente sobre substrato de vidro padronizado para uso em dispositivo fotovoltaico e processo de fabricação do mesmo BRPI0810855A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/790,687 US8012317B2 (en) 2006-11-02 2007-04-26 Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
PCT/US2008/002729 WO2008133770A1 (en) 2007-04-26 2008-02-29 Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same

Publications (1)

Publication Number Publication Date
BRPI0810855A2 true BRPI0810855A2 (pt) 2014-10-29

Family

ID=39562562

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0810855-2A2A BRPI0810855A2 (pt) 2007-04-26 2008-02-29 Eletrodo frontal incluindo revestimento condutivo transparente sobre substrato de vidro padronizado para uso em dispositivo fotovoltaico e processo de fabricação do mesmo

Country Status (5)

Country Link
US (1) US8012317B2 (pt)
EP (3) EP2140496A1 (pt)
BR (1) BRPI0810855A2 (pt)
RU (1) RU2009143666A (pt)
WO (1) WO2008133770A1 (pt)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008039461A2 (en) * 2006-09-27 2008-04-03 Thinsilicon Corp. Back contact device for photovoltaic cells and method of manufacturing a back contact
US8076571B2 (en) * 2006-11-02 2011-12-13 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080105293A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080105299A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same
US20080302414A1 (en) * 2006-11-02 2008-12-11 Den Boer Willem Front electrode for use in photovoltaic device and method of making same
US7964788B2 (en) * 2006-11-02 2011-06-21 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080178932A1 (en) * 2006-11-02 2008-07-31 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US8203073B2 (en) * 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8334452B2 (en) 2007-01-08 2012-12-18 Guardian Industries Corp. Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
US20080169021A1 (en) * 2007-01-16 2008-07-17 Guardian Industries Corp. Method of making TCO front electrode for use in photovoltaic device or the like
US20080223430A1 (en) * 2007-03-14 2008-09-18 Guardian Industries Corp. Buffer layer for front electrode structure in photovoltaic device or the like
WO2008150769A2 (en) * 2007-05-31 2008-12-11 Thinsilicon Corporation Photovoltaic device and method of manufacturing photovoltaic devices
US20080308145A1 (en) * 2007-06-12 2008-12-18 Guardian Industries Corp Front electrode including transparent conductive coating on etched glass substrate for use in photovoltaic device and method of making same
US20080308146A1 (en) * 2007-06-14 2008-12-18 Guardian Industries Corp. Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same
US7888594B2 (en) * 2007-11-20 2011-02-15 Guardian Industries Corp. Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index
KR101000051B1 (ko) * 2008-01-09 2010-12-10 엘지전자 주식회사 박막형 태양전지 및 그 제조방법
US20090194157A1 (en) * 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same
US20090194155A1 (en) * 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same
US7759755B2 (en) * 2008-05-14 2010-07-20 International Business Machines Corporation Anti-reflection structures for CMOS image sensors
US7915522B2 (en) 2008-05-30 2011-03-29 Twin Creeks Technologies, Inc. Asymmetric surface texturing for use in a photovoltaic cell and method of making
US8501522B2 (en) * 2008-05-30 2013-08-06 Gtat Corporation Intermetal stack for use in a photovoltaic cell
EP2332177A4 (en) * 2008-09-29 2012-12-26 Thinsilicon Corp MONOLITHICALLY INTEGRATED SOLAR MODULE
US8022291B2 (en) * 2008-10-15 2011-09-20 Guardian Industries Corp. Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device
WO2010051599A1 (en) * 2008-11-10 2010-05-14 Solar Systems Pty Ltd A photovoltaic cell
JP5470633B2 (ja) 2008-12-11 2014-04-16 国立大学法人東北大学 光電変換素子及び太陽電池
KR101180234B1 (ko) * 2009-04-03 2012-09-05 (주)엘지하우시스 디자인층을 구비한 건물 일체형 태양전지 모듈
WO2010129163A2 (en) * 2009-05-06 2010-11-11 Thinsilicon Corporation Photovoltaic cells and methods to enhance light trapping in semiconductor layer stacks
WO2010144421A2 (en) * 2009-06-10 2010-12-16 Thinsilicon Corporation Photovoltaic modules and methods of manufacturing photovoltaic modules having multiple semiconductor layer stacks
US20110114156A1 (en) * 2009-06-10 2011-05-19 Thinsilicon Corporation Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode
KR101134595B1 (ko) * 2009-07-29 2012-04-09 삼성코닝정밀소재 주식회사 태양전지 기판, 태양전지 기판 제조 방법 및 태양전지
DE102009028393A1 (de) * 2009-08-10 2011-02-17 Robert Bosch Gmbh Solarzelle
US7973997B2 (en) * 2009-08-31 2011-07-05 Korea University Research And Business Foundation Transparent structures
US20110186120A1 (en) * 2009-11-05 2011-08-04 Guardian Industries Corp. Textured coating with various feature sizes made by using multiple-agent etchant for thin-film solar cells and/or methods of making the same
US20110100446A1 (en) * 2009-11-05 2011-05-05 Guardian Industries Corp. High haze transparent contact including ion-beam treated layer for solar cells, and/or method of making the same
US20110168252A1 (en) * 2009-11-05 2011-07-14 Guardian Industries Corp. Textured coating with etching-blocking layer for thin-film solar cells and/or methods of making the same
US20110126875A1 (en) * 2009-12-01 2011-06-02 Hien-Minh Huu Le Conductive contact layer formed on a transparent conductive layer by a reactive sputter deposition
FR2947954A1 (fr) * 2009-12-11 2011-01-14 Commissariat Energie Atomique Cellule texturee a rendement de conversion eleve comportant une zone texturee recouverte par une bi-couche antireflet
KR101410392B1 (ko) * 2009-12-30 2014-06-20 주성엔지니어링(주) 이종 접합 태양전지 및 그 제조방법
JP2011159730A (ja) * 2010-01-29 2011-08-18 Fujifilm Corp 導電性酸化亜鉛積層膜及びこれを備えた光電変換素子
DE102010009558A1 (de) * 2010-02-26 2011-09-01 Von Ardenne Anlagentechnik Gmbh Verfahren zur Herstellung einer texturierten TCO-Schicht
KR101669953B1 (ko) 2010-03-26 2016-11-09 삼성전자 주식회사 산화물 박막, 산화물 박막의 형성 방법 및 산화물 박막을 포함하는 전자 소자
SE535795C2 (sv) * 2010-08-03 2012-12-27 Gisle Innovations Ab Anordning vid solpanel
US20130019929A1 (en) * 2011-07-19 2013-01-24 International Business Machines Reduction of light induced degradation by minimizing band offset
KR101783784B1 (ko) 2011-11-29 2017-10-11 한국전자통신연구원 태양전지 모듈 및 그의 제조방법
US9082914B2 (en) 2012-01-13 2015-07-14 Gaurdian Industries Corp. Photovoltaic module including high contact angle coating on one or more outer surfaces thereof, and/or methods of making the same
DE102012201284B4 (de) * 2012-01-30 2018-10-31 Ewe-Forschungszentrum Für Energietechnologie E. V. Verfahren zum Herstellen einer photovoltaischen Solarzelle
CN102637751A (zh) * 2012-05-15 2012-08-15 南开大学 太阳电池用宽光谱陷光透明导电薄膜及其制备方法
US9082911B2 (en) * 2013-01-28 2015-07-14 Q1 Nanosystems Corporation Three-dimensional metamaterial device with photovoltaic bristles
KR102600379B1 (ko) * 2015-12-21 2023-11-10 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지와 그 제조 방법
CN108538929A (zh) * 2018-02-13 2018-09-14 全球能源互联网研究院有限公司 一种用于太阳能电池的复合膜及其制备方法和应用
CN114361267B (zh) * 2021-12-13 2024-08-09 中国科学院上海微系统与信息技术研究所 一种shj太阳电池双层tco薄膜结构及其制备方法
CN114914311B (zh) * 2022-04-18 2023-03-07 通威太阳能（安徽）有限公司 导电层、太阳能电池及其制备方法

Family Cites Families (134)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL127148C (pt) 1963-12-23
US4155781A (en) 1976-09-03 1979-05-22 Siemens Aktiengesellschaft Method of manufacturing solar cells, utilizing single-crystal whisker growth
US4162505A (en) 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
US4163677A (en) 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
US4213798A (en) 1979-04-27 1980-07-22 Rca Corporation Tellurium schottky barrier contact for amorphous silicon solar cells
JPS5749278A (en) * 1980-09-08 1982-03-23 Mitsubishi Electric Corp Amorphous silicone solar cell
US4378460A (en) 1981-08-31 1983-03-29 Rca Corporation Metal electrode for amorphous silicon solar cells
US4554727A (en) 1982-08-04 1985-11-26 Exxon Research & Engineering Company Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces
US4497974A (en) * 1982-11-22 1985-02-05 Exxon Research & Engineering Co. Realization of a thin film solar cell with a detached reflector
JPS59175166A (ja) 1983-03-23 1984-10-03 Agency Of Ind Science & Technol アモルファス光電変換素子
US4598306A (en) 1983-07-28 1986-07-01 Energy Conversion Devices, Inc. Barrier layer for photovoltaic devices
JPH0680837B2 (ja) 1983-08-29 1994-10-12 通商産業省工業技術院長 光路を延長した光電変換素子
JPS6068663A (ja) * 1983-09-26 1985-04-19 Komatsu Denshi Kinzoku Kk アモルフアスシリコン太陽電池
US4598396A (en) * 1984-04-03 1986-07-01 Itt Corporation Duplex transmission mechanism for digital telephones
US4689438A (en) 1984-10-17 1987-08-25 Sanyo Electric Co., Ltd. Photovoltaic device
JPS61108176A (ja) 1984-11-01 1986-05-26 Fuji Electric Co Ltd 粗面化方法
JPH0750793B2 (ja) * 1985-06-04 1995-05-31 工業技術院長 薄膜光電変換素子
US4663495A (en) 1985-06-04 1987-05-05 Atlantic Richfield Company Transparent photovoltaic module
GB2188924B (en) 1986-04-08 1990-05-09 Glaverbel Matted glass, process of producing matted glass, photo-voltaic cell incorporating a glass sheet, and process of manufacturing such a cell
DE3704880A1 (de) 1986-07-11 1988-01-21 Nukem Gmbh Transparentes, leitfaehiges schichtsystem
AU616736B2 (en) 1988-03-03 1991-11-07 Asahi Glass Company Limited Amorphous oxide film and article having such film thereon
DE68927845T2 (de) 1988-09-30 1997-08-07 Kanegafuchi Chemical Ind Sonnenzelle mit einer durchsichtigen Elektrode
US4940495A (en) 1988-12-07 1990-07-10 Minnesota Mining And Manufacturing Company Photovoltaic device having light transmitting electrically conductive stacked films
JPH02164077A (ja) * 1988-12-19 1990-06-25 Hitachi Ltd アモルファスシリコン太陽電池
JP3117446B2 (ja) 1989-06-15 2000-12-11 株式会社半導体エネルギー研究所 酸化物導電膜の成膜加工方法
DE4024308C2 (de) 1989-07-31 1993-12-02 Central Glass Co Ltd Wärmeisolierglas mit dielektrischem Vielschichtenüberzug
DE69027590T2 (de) 1989-08-01 1996-12-05 Asahi Glass Co Ltd Verfahren zur Herstellung von Schichten auf basis von Siliziumdioxyd mittels DC Sputtern und Target dafür
DE4000664A1 (de) * 1990-01-11 1991-07-18 Siemens Ag Transparente elektrode aus leitfaehigem oxid fuer photodioden und verfahren zu ihrer herstellung
AU8872891A (en) 1990-10-15 1992-05-20 United Solar Systems Corporation Monolithic solar cell array and method for its manufacture
DE4126738A1 (de) 1990-12-11 1992-06-17 Claussen Nils Zr0(pfeil abwaerts)2(pfeil abwaerts)-haltiger keramikformkoerper
US5171411A (en) 1991-05-21 1992-12-15 The Boc Group, Inc. Rotating cylindrical magnetron structure with self supporting zinc alloy target
US5256858A (en) 1991-08-29 1993-10-26 Tomb Richard H Modular insulation electrically heated building panel with evacuated chambers
US5699035A (en) 1991-12-13 1997-12-16 Symetrix Corporation ZnO thin-film varistors and method of making the same
JP2974485B2 (ja) 1992-02-05 1999-11-10 キヤノン株式会社 光起電力素子の製造法
US5230746A (en) * 1992-03-03 1993-07-27 Amoco Corporation Photovoltaic device having enhanced rear reflecting contact
EP0681335B1 (en) 1993-09-30 2001-11-28 Canon Kabushiki Kaisha Solar cell module having surface coating material of three-layer structure
JP3029178B2 (ja) 1994-04-27 2000-04-04 キヤノン株式会社 薄膜半導体太陽電池の製造方法
GB9500330D0 (en) 1995-01-09 1995-03-01 Pilkington Plc Coatings on glass
FR2730990B1 (fr) 1995-02-23 1997-04-04 Saint Gobain Vitrage Substrat transparent a revetement anti-reflets
EP0733931B1 (en) 1995-03-22 2003-08-27 Toppan Printing Co., Ltd. Multilayered conductive film, and transparent electrode substrate and liquid crystal device using the same
JP3431776B2 (ja) 1995-11-13 2003-07-28 シャープ株式会社 太陽電池用基板の製造方法および太陽電池用基板加工装置
US6433913B1 (en) 1996-03-15 2002-08-13 Gentex Corporation Electro-optic device incorporating a discrete photovoltaic device and method and apparatus for making same
GB9619134D0 (en) 1996-09-13 1996-10-23 Pilkington Plc Improvements in or related to coated glass
US5922142A (en) * 1996-11-07 1999-07-13 Midwest Research Institute Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making
US6406639B2 (en) 1996-11-26 2002-06-18 Nippon Sheet Glass Co., Ltd. Method of partially forming oxide layer on glass substrate
US6123824A (en) 1996-12-13 2000-09-26 Canon Kabushiki Kaisha Process for producing photo-electricity generating device
DE19713215A1 (de) 1997-03-27 1998-10-08 Forschungszentrum Juelich Gmbh Solarzelle mit texturierter TCO-Schicht sowie Verfahren zur Herstellung einer solchen TCO-Schicht für eine solche Solarzelle
JP3805889B2 (ja) 1997-06-20 2006-08-09 株式会社カネカ 太陽電池モジュールおよびその製造方法
JPH1146006A (ja) 1997-07-25 1999-02-16 Canon Inc 光起電力素子およびその製造方法
US6222117B1 (en) 1998-01-05 2001-04-24 Canon Kabushiki Kaisha Photovoltaic device, manufacturing method of photovoltaic device, photovoltaic device integrated with building material and power-generating apparatus
EP1063317B1 (en) 1998-03-05 2003-07-30 Asahi Glass Company Ltd. Sputtering target, transparent conductive film, and method for producing the same
US6344608B2 (en) * 1998-06-30 2002-02-05 Canon Kabushiki Kaisha Photovoltaic element
FR2781062B1 (fr) 1998-07-09 2002-07-12 Saint Gobain Vitrage Vitrage a proprietes optiques et/ou energetiques electrocommandables
US6077722A (en) 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
CA2341629A1 (en) 1998-08-26 2000-03-09 Hodaka Norimatsu Photovoltaic device
JP2000091084A (ja) 1998-09-16 2000-03-31 Trustees Of Princeton Univ ホ―ル注入性改良電極
FR2791147B1 (fr) 1999-03-19 2002-08-30 Saint Gobain Vitrage Dispositif electrochimique du type dispositif electrocommandable a proprietes optiques et/ou energetiques variables
TW463528B (en) 1999-04-05 2001-11-11 Idemitsu Kosan Co Organic electroluminescence element and their preparation
NO314525B1 (no) 1999-04-22 2003-03-31 Thin Film Electronics Asa Fremgangsmåte ved fremstillingen av organiske halvledende innretninger i tynnfilm
US6380480B1 (en) * 1999-05-18 2002-04-30 Nippon Sheet Glass Co., Ltd Photoelectric conversion device and substrate for photoelectric conversion device
US6187824B1 (en) 1999-08-25 2001-02-13 Nyacol Nano Technologies, Inc. Zinc oxide sol and method of making
DE19958878B4 (de) 1999-12-07 2012-01-19 Saint-Gobain Glass Deutschland Gmbh Dünnschicht-Solarzelle
JP4434411B2 (ja) 2000-02-16 2010-03-17 出光興産株式会社 アクティブ駆動型有機ｅｌ発光装置およびその製造方法
US6524647B1 (en) 2000-03-24 2003-02-25 Pilkington Plc Method of forming niobium doped tin oxide coatings on glass and coated glass formed thereby
TW532048B (en) 2000-03-27 2003-05-11 Idemitsu Kosan Co Organic electroluminescence element
US6576349B2 (en) 2000-07-10 2003-06-10 Guardian Industries Corp. Heat treatable low-E coated articles and methods of making same
US7267879B2 (en) 2001-02-28 2007-09-11 Guardian Industries Corp. Coated article with silicon oxynitride adjacent glass
US6521883B2 (en) * 2000-07-18 2003-02-18 Sanyo Electric Co., Ltd. Photovoltaic device
CN101393967A (zh) 2000-08-23 2009-03-25 出光兴产株式会社 有机场致发光显示装置
US6784361B2 (en) 2000-09-20 2004-08-31 Bp Corporation North America Inc. Amorphous silicon photovoltaic devices
JP2002260448A (ja) 2000-11-21 2002-09-13 Nippon Sheet Glass Co Ltd 導電膜、その製造方法、それを備えた基板および光電変換装置
JP2002170431A (ja) 2000-11-29 2002-06-14 Idemitsu Kosan Co Ltd 電極基板およびその製造方法
WO2002063340A1 (en) 2001-02-07 2002-08-15 Kyoto Semiconductor Corporation Radiation detector and radiation detecting element
KR100768176B1 (ko) 2001-02-07 2007-10-17 삼성에스디아이 주식회사 광학적 전기적 특성을 지닌 기능성 박막
US6774300B2 (en) 2001-04-27 2004-08-10 Adrena, Inc. Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure
WO2002091483A2 (en) 2001-05-08 2002-11-14 Bp Corporation North America Inc. Improved photovoltaic device
US6589657B2 (en) 2001-08-31 2003-07-08 Von Ardenne Anlagentechnik Gmbh Anti-reflection coatings and associated methods
JP4162447B2 (ja) 2001-09-28 2008-10-08 三洋電機株式会社 光起電力素子及び光起電力装置
US6936347B2 (en) 2001-10-17 2005-08-30 Guardian Industries Corp. Coated article with high visible transmission and low emissivity
FR2832706B1 (fr) 2001-11-28 2004-07-23 Saint Gobain Substrat transparent muni d'une electrode
US6830817B2 (en) 2001-12-21 2004-12-14 Guardian Industries Corp. Low-e coating with high visible transmission
KR100835920B1 (ko) 2001-12-27 2008-06-09 엘지디스플레이 주식회사 터치패널 일체형 액정패널
US7144837B2 (en) 2002-01-28 2006-12-05 Guardian Industries Corp. Clear glass composition with high visible transmittance
US7169722B2 (en) 2002-01-28 2007-01-30 Guardian Industries Corp. Clear glass composition with high visible transmittance
US7037869B2 (en) 2002-01-28 2006-05-02 Guardian Industries Corp. Clear glass composition
US6919133B2 (en) 2002-03-01 2005-07-19 Cardinal Cg Company Thin film coating having transparent base layer
KR100505536B1 (ko) 2002-03-27 2005-08-04 스미토모 긴조쿠 고잔 가부시키가이샤 투명한 도전성 박막, 그것의 제조방법, 그것의 제조를위한 소결 타겟, 디스플레이 패널용의 투명한 전기전도성기재, 및 유기 전기루미네선스 디바이스
FR2844136B1 (fr) 2002-09-03 2006-07-28 Corning Inc Materiau utilisable dans la fabrication de dispositifs d'affichage lumineux en particulier de diodes electroluminescentes organiques
FR2844364B1 (fr) 2002-09-11 2004-12-17 Saint Gobain Substrat diffusant
US7141863B1 (en) 2002-11-27 2006-11-28 University Of Toledo Method of making diode structures
TW583466B (en) 2002-12-09 2004-04-11 Hannstar Display Corp Structure of liquid crystal display
US6975067B2 (en) 2002-12-19 2005-12-13 3M Innovative Properties Company Organic electroluminescent device and encapsulation method
TWI232066B (en) 2002-12-25 2005-05-01 Au Optronics Corp Manufacturing method of organic light emitting diode for reducing reflection of external light
JP4241446B2 (ja) 2003-03-26 2009-03-18 キヤノン株式会社 積層型光起電力素子
JP5068946B2 (ja) 2003-05-13 2012-11-07 旭硝子株式会社 太陽電池用透明導電性基板およびその製造方法
US20040244829A1 (en) 2003-06-04 2004-12-09 Rearick Brian K. Coatings for encapsulation of photovoltaic cells
GB2405030A (en) * 2003-08-13 2005-02-16 Univ Loughborough Bifacial thin film solar cell
US7087309B2 (en) 2003-08-22 2006-08-08 Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A. (C.R.V.C.) Coated article with tin oxide, silicon nitride and/or zinc oxide under IR reflecting layer and corresponding method
US7153579B2 (en) 2003-08-22 2006-12-26 Centre Luxembourgeois de Recherches pour le Verre et la Ceramique S.A, (C.R.V.C.) Heat treatable coated article with tin oxide inclusive layer between titanium oxide and silicon nitride
JP4761706B2 (ja) 2003-12-25 2011-08-31 京セラ株式会社 光電変換装置の製造方法
US8524051B2 (en) 2004-05-18 2013-09-03 Centre Luxembourg de Recherches pour le Verre et al Ceramique S. A. (C.R.V.C.) Coated article with oxidation graded layer proximate IR reflecting layer(s) and corresponding method
US20050257824A1 (en) 2004-05-24 2005-11-24 Maltby Michael G Photovoltaic cell including capping layer
US7537677B2 (en) * 2005-01-19 2009-05-26 Guardian Industries Corp. Method of making low-E coating using ceramic zinc inclusive target, and target used in same
US7700869B2 (en) 2005-02-03 2010-04-20 Guardian Industries Corp. Solar cell low iron patterned glass and method of making same
US7531239B2 (en) 2005-04-06 2009-05-12 Eclipse Energy Systems Inc Transparent electrode
US7700870B2 (en) 2005-05-05 2010-04-20 Guardian Industries Corp. Solar cell using low iron high transmission glass with antimony and corresponding method
US7743630B2 (en) 2005-05-05 2010-06-29 Guardian Industries Corp. Method of making float glass with transparent conductive oxide (TCO) film integrally formed on tin bath side of glass and corresponding product
US8093491B2 (en) 2005-06-03 2012-01-10 Ferro Corporation Lead free solar cell contacts
US7597964B2 (en) 2005-08-02 2009-10-06 Guardian Industries Corp. Thermally tempered coated article with transparent conductive oxide (TCO) coating
JP2007067194A (ja) 2005-08-31 2007-03-15 Fujifilm Corp 有機光電変換素子、および積層型光電変換素子
FR2891269B1 (fr) * 2005-09-23 2007-11-09 Saint Gobain Substrat transparent muni d'une electrode
US20070184573A1 (en) 2006-02-08 2007-08-09 Guardian Industries Corp., Method of making a thermally treated coated article with transparent conductive oxide (TCO) coating for use in a semiconductor device
US20070193624A1 (en) 2006-02-23 2007-08-23 Guardian Industries Corp. Indium zinc oxide based front contact for photovoltaic device and method of making same
US8648252B2 (en) 2006-03-13 2014-02-11 Guardian Industries Corp. Solar cell using low iron high transmission glass and corresponding method
US7557053B2 (en) 2006-03-13 2009-07-07 Guardian Industries Corp. Low iron high transmission float glass for solar cell applications and method of making same
US20080047602A1 (en) 2006-08-22 2008-02-28 Guardian Industries Corp. Front contact with high-function TCO for use in photovoltaic device and method of making same
US20080047603A1 (en) 2006-08-24 2008-02-28 Guardian Industries Corp. Front contact with intermediate layer(s) adjacent thereto for use in photovoltaic device and method of making same
US8076571B2 (en) 2006-11-02 2011-12-13 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8203073B2 (en) 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080302414A1 (en) 2006-11-02 2008-12-11 Den Boer Willem Front electrode for use in photovoltaic device and method of making same
US20080178932A1 (en) 2006-11-02 2008-07-31 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US20080105293A1 (en) 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080105298A1 (en) 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US7964788B2 (en) 2006-11-02 2011-06-21 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080105299A1 (en) 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same
US8334452B2 (en) 2007-01-08 2012-12-18 Guardian Industries Corp. Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
US20080169021A1 (en) 2007-01-16 2008-07-17 Guardian Industries Corp. Method of making TCO front electrode for use in photovoltaic device or the like
US20080223430A1 (en) 2007-03-14 2008-09-18 Guardian Industries Corp. Buffer layer for front electrode structure in photovoltaic device or the like
US20080223436A1 (en) 2007-03-15 2008-09-18 Guardian Industries Corp. Back reflector for use in photovoltaic device
US20080308145A1 (en) 2007-06-12 2008-12-18 Guardian Industries Corp Front electrode including transparent conductive coating on etched glass substrate for use in photovoltaic device and method of making same
US20080308146A1 (en) 2007-06-14 2008-12-18 Guardian Industries Corp. Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same
US7888594B2 (en) 2007-11-20 2011-02-15 Guardian Industries Corp. Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index
US20090194155A1 (en) 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same
US20090194157A1 (en) 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same

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WO2008133770A1 (en) 2008-11-06
EP2140496A1 (en) 2010-01-06
US8012317B2 (en) 2011-09-06
EP2372777A2 (en) 2011-10-05
EP2276069A2 (en) 2011-01-19
US20080107799A1 (en) 2008-05-08
RU2009143666A (ru) 2011-06-10
EP2276069A3 (en) 2012-06-13

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