CA1136291A - Configuration a sources polygonales multiples pour mosfet - Google Patents

Configuration a sources polygonales multiples pour mosfet

Info

Publication number
CA1136291A
CA1136291A CA000389973A CA389973A CA1136291A CA 1136291 A CA1136291 A CA 1136291A CA 000389973 A CA000389973 A CA 000389973A CA 389973 A CA389973 A CA 389973A CA 1136291 A CA1136291 A CA 1136291A
Authority
CA
Canada
Prior art keywords
regions
source
region
hexagonal
polygonal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000389973A
Other languages
English (en)
Inventor
Alexander Lidow
Thomas Herman
Vladimir Rumennik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26715426&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CA1136291(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Priority to CA000389973A priority Critical patent/CA1136291A/fr
Application granted granted Critical
Publication of CA1136291A publication Critical patent/CA1136291A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
CA000389973A 1978-10-13 1981-11-12 Configuration a sources polygonales multiples pour mosfet Expired CA1136291A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA000389973A CA1136291A (fr) 1978-10-13 1981-11-12 Configuration a sources polygonales multiples pour mosfet

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US95131078A 1978-10-13 1978-10-13
US951,310 1978-10-13
US3866279A 1979-05-14 1979-05-14
US38,662 1979-05-14
CA337,182A CA1123119A (fr) 1978-10-13 1979-10-09 Configuration de sources polygonales multiples pour mosfet
CA000389973A CA1136291A (fr) 1978-10-13 1981-11-12 Configuration a sources polygonales multiples pour mosfet

Publications (1)

Publication Number Publication Date
CA1136291A true CA1136291A (fr) 1982-11-23

Family

ID=26715426

Family Applications (2)

Application Number Title Priority Date Filing Date
CA337,182A Expired CA1123119A (fr) 1978-10-13 1979-10-09 Configuration de sources polygonales multiples pour mosfet
CA000389973A Expired CA1136291A (fr) 1978-10-13 1981-11-12 Configuration a sources polygonales multiples pour mosfet

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CA337,182A Expired CA1123119A (fr) 1978-10-13 1979-10-09 Configuration de sources polygonales multiples pour mosfet

Country Status (19)

Country Link
JP (2) JP2622378B2 (fr)
AR (1) AR219006A1 (fr)
BR (1) BR7906338A (fr)
CA (2) CA1123119A (fr)
CH (2) CH642485A5 (fr)
CS (1) CS222676B2 (fr)
DE (2) DE2954481C2 (fr)
DK (3) DK157272C (fr)
ES (1) ES484652A1 (fr)
FR (1) FR2438917A1 (fr)
GB (1) GB2033658B (fr)
HU (1) HU182506B (fr)
IL (1) IL58128A (fr)
IT (1) IT1193238B (fr)
MX (1) MX147137A (fr)
NL (1) NL175358C (fr)
PL (1) PL123961B1 (fr)
SE (2) SE443682B (fr)
SU (1) SU1621817A3 (fr)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5592026A (en) * 1993-12-24 1997-01-07 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated structure pad assembly for lead bonding
US5631476A (en) * 1994-08-02 1997-05-20 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device chip and package assembly
US5663080A (en) * 1991-11-29 1997-09-02 Sgs-Thomson Microelectronics, S.R.L. Process for manufacturing MOS-type integrated circuits
US5723349A (en) * 1994-01-27 1998-03-03 Consorzio Pre La Ricerca Sulla Microelettronica Nel Mezzogiorno Process for manufacturing a high conductivity insulated gate bipolar transistor integrater structure
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US5798287A (en) * 1993-12-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Method for forming a power MOS device chip
US5817546A (en) * 1994-06-23 1998-10-06 Stmicroelectronics S.R.L. Process of making a MOS-technology power device
US5821616A (en) * 1993-12-24 1998-10-13 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Power MOS device chip and package assembly
US5841167A (en) * 1995-12-28 1998-11-24 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device integrated structure
US5874338A (en) * 1994-06-23 1999-02-23 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device and process of making same
US5981343A (en) * 1995-10-30 1999-11-09 Sgs-Thomas Microelectronics, S.R.L. Single feature size mos technology power device
US6030870A (en) * 1995-10-30 2000-02-29 Sgs-Thomson Microelectronics, S.R.L. High density MOS technology power device
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
US6492691B2 (en) 1998-05-26 2002-12-10 Stmicroelectronics S.R.L. High integration density MOS technology power device structure

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
DE3040775C2 (de) * 1980-10-29 1987-01-15 Siemens AG, 1000 Berlin und 8000 München Steuerbares MIS-Halbleiterbauelement
US4412242A (en) 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
GB2111745B (en) * 1981-12-07 1985-06-19 Philips Electronic Associated Insulated-gate field-effect transistors
CA1188821A (fr) * 1982-09-03 1985-06-11 Patrick W. Clarke Mospet de puissance integre
US4532534A (en) * 1982-09-07 1985-07-30 Rca Corporation MOSFET with perimeter channel
DE3346286A1 (de) * 1982-12-21 1984-06-28 International Rectifier Corp., Los Angeles, Calif. Hochleistungs-metalloxid-feldeffekttransistor- halbleiterbauteil
JPS59167066A (ja) * 1983-03-14 1984-09-20 Nissan Motor Co Ltd 縦形ｍｏｓｆｅｔ
JPS6010677A (ja) * 1983-06-30 1985-01-19 Nissan Motor Co Ltd 縦型ｍｏｓトランジスタ
JPH0247874A (ja) * 1988-08-10 1990-02-16 Fuji Electric Co Ltd Ｍｏｓ型半導体装置の製造方法
US5766966A (en) * 1996-02-09 1998-06-16 International Rectifier Corporation Power transistor device having ultra deep increased concentration region
IT1247293B (it) * 1990-05-09 1994-12-12 Int Rectifier Corp Dispositivo transistore di potenza presentante una regione ultra-profonda, a maggior concentrazione
US5404040A (en) * 1990-12-21 1995-04-04 Siliconix Incorporated Structure and fabrication of power MOSFETs, including termination structures
US5304831A (en) * 1990-12-21 1994-04-19 Siliconix Incorporated Low on-resistance power MOS technology
DE59208987D1 (de) * 1992-08-10 1997-11-27 Siemens Ag Leistungs-MOSFET mit verbesserter Avalanche-Festigkeit
JPH06268227A (ja) * 1993-03-10 1994-09-22 Hitachi Ltd 絶縁ゲート型バイポーラトランジスタ
US6563169B1 (en) 1999-04-09 2003-05-13 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device with high withstand voltage and a drain layer having a highly conductive region connectable to a diffused source layer by an inverted layer
JP4122113B2 (ja) * 1999-06-24 2008-07-23 新電元工業株式会社 高破壊耐量電界効果型トランジスタ
US6344379B1 (en) * 1999-10-22 2002-02-05 Semiconductor Components Industries Llc Semiconductor device with an undulating base region and method therefor
JP4845293B2 (ja) * 2000-08-30 2011-12-28 新電元工業株式会社 電界効果トランジスタ
JP2006295134A (ja) 2005-03-17 2006-10-26 Sanyo Electric Co Ltd 半導体装置およびその製造方法
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9530844B2 (en) 2012-12-28 2016-12-27 Cree, Inc. Transistor structures having reduced electrical field at the gate oxide and methods for making same
US10115815B2 (en) * 2012-12-28 2018-10-30 Cree, Inc. Transistor structures having a deep recessed P+ junction and methods for making same
JP5907097B2 (ja) * 2013-03-18 2016-04-20 三菱電機株式会社 半導体装置
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
KR102098996B1 (ko) 2014-08-19 2020-04-08 비쉐이-실리코닉스 초접합 금속 산화물 반도체 전계 효과 트랜지스터
US11489069B2 (en) 2017-12-21 2022-11-01 Wolfspeed, Inc. Vertical semiconductor device with improved ruggedness
US10615274B2 (en) 2017-12-21 2020-04-07 Cree, Inc. Vertical semiconductor device with improved ruggedness

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US4015278A (en) * 1974-11-26 1977-03-29 Fujitsu Ltd. Field effect semiconductor device
JPS52106688A (en) * 1976-03-05 1977-09-07 Nec Corp Field-effect transistor
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures
JPS5374385A (en) * 1976-12-15 1978-07-01 Hitachi Ltd Manufacture of field effect semiconductor device
US4148047A (en) * 1978-01-16 1979-04-03 Honeywell Inc. Semiconductor apparatus
JPH05185381A (ja) * 1992-01-10 1993-07-27 Yuum Kogyo:Kk 替刃式鋸用ハンドル

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5663080A (en) * 1991-11-29 1997-09-02 Sgs-Thomson Microelectronics, S.R.L. Process for manufacturing MOS-type integrated circuits
US5696399A (en) * 1991-11-29 1997-12-09 Sgs-Thomson Microelectronics S.R.L. Process for manufacturing MOS-type integrated circuits
US5888889A (en) * 1993-12-24 1999-03-30 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated structure pad assembly for lead bonding
US5821616A (en) * 1993-12-24 1998-10-13 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Power MOS device chip and package assembly
US5798287A (en) * 1993-12-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Method for forming a power MOS device chip
US5592026A (en) * 1993-12-24 1997-01-07 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated structure pad assembly for lead bonding
US5723349A (en) * 1994-01-27 1998-03-03 Consorzio Pre La Ricerca Sulla Microelettronica Nel Mezzogiorno Process for manufacturing a high conductivity insulated gate bipolar transistor integrater structure
US5817546A (en) * 1994-06-23 1998-10-06 Stmicroelectronics S.R.L. Process of making a MOS-technology power device
US5874338A (en) * 1994-06-23 1999-02-23 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device and process of making same
US5851855A (en) * 1994-08-02 1998-12-22 Sgs-Thomson Microelectronics S.R.L. Process for manufacturing a MOS-technology power device chip and package assembly
US5631476A (en) * 1994-08-02 1997-05-20 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device chip and package assembly
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US6111297A (en) * 1995-02-24 2000-08-29 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US5981343A (en) * 1995-10-30 1999-11-09 Sgs-Thomas Microelectronics, S.R.L. Single feature size mos technology power device
US6054737A (en) * 1995-10-30 2000-04-25 Sgs-Thomson Microelectronics S.R.L. High density MOS technology power device
US5985721A (en) * 1995-10-30 1999-11-16 Sgs-Thomson Microelectronics, S.R.L. Single feature size MOS technology power device
US6030870A (en) * 1995-10-30 2000-02-29 Sgs-Thomson Microelectronics, S.R.L. High density MOS technology power device
US5981998A (en) * 1995-10-30 1999-11-09 Sgs-Thomson Microelectronics S.R.L. Single feature size MOS technology power device
US6064087A (en) * 1995-10-30 2000-05-16 Sgs-Thomson Microelectronics, S.R.L. Single feature size MOS technology power device
US6468866B2 (en) 1995-10-30 2002-10-22 Sgs-Thomson Microelectronics S.R.L. Single feature size MOS technology power device
US6548864B2 (en) 1995-10-30 2003-04-15 Sgs Thomson Microelectronics High density MOS technology power device
US6566690B2 (en) 1995-10-30 2003-05-20 Sgs Thomson Microelectronics S.R.L. Single feature size MOS technology power device
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
US6051862A (en) * 1995-12-28 2000-04-18 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device integrated structure
US5841167A (en) * 1995-12-28 1998-11-24 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device integrated structure
US6492691B2 (en) 1998-05-26 2002-12-10 Stmicroelectronics S.R.L. High integration density MOS technology power device structure

Also Published As

Publication number Publication date
JPH07169950A (ja) 1995-07-04
DK157272B (da) 1989-11-27
FR2438917B1 (fr) 1984-09-07
SE7908479L (sv) 1980-04-14
DK512488A (da) 1988-09-15
SE8503615D0 (sv) 1985-07-26
DE2954481C2 (de) 1990-12-06
FR2438917A1 (fr) 1980-05-09
GB2033658B (en) 1983-03-02
CA1123119A (fr) 1982-05-04
MX147137A (es) 1982-10-13
SE443682B (sv) 1986-03-03
PL218878A1 (fr) 1980-08-11
ES484652A1 (es) 1980-09-01
DE2940699A1 (de) 1980-04-24
CS222676B2 (en) 1983-07-29
CH642485A5 (de) 1984-04-13
NL175358B (nl) 1984-05-16
DE2940699C2 (de) 1986-04-03
JP2622378B2 (ja) 1997-06-18
DK350679A (da) 1980-04-14
NL175358C (nl) 1984-10-16
NL7907472A (nl) 1980-04-15
AR219006A1 (es) 1980-07-15
SE8503615L (sv) 1985-07-26
SU1621817A3 (ru) 1991-01-15
HU182506B (en) 1984-01-30
SE465444B (sv) 1991-09-09
DK512388D0 (da) 1988-09-15
JPS6323365A (ja) 1988-01-30
DK512488D0 (da) 1988-09-15
DK157272C (da) 1990-04-30
IT7926435A0 (it) 1979-10-11
CH660649A5 (de) 1987-05-15
IL58128A (en) 1981-12-31
GB2033658A (en) 1980-05-21
BR7906338A (pt) 1980-06-24
DK512388A (da) 1988-09-15
PL123961B1 (en) 1982-12-31
IT1193238B (it) 1988-06-15
JP2643095B2 (ja) 1997-08-20

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