JPS5374385A - Manufacture of field effect semiconductor device - Google Patents

Manufacture of field effect semiconductor device

Info

Publication number
JPS5374385A
JPS5374385A JP14971776A JP14971776A JPS5374385A JP S5374385 A JPS5374385 A JP S5374385A JP 14971776 A JP14971776 A JP 14971776A JP 14971776 A JP14971776 A JP 14971776A JP S5374385 A JPS5374385 A JP S5374385A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
field effect
effect semiconductor
dielectric strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14971776A
Other languages
Japanese (ja)
Inventor
Takeaki Okabe
Isao Yoshida
Tatsu Toriyabe
Shikayuki Ochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14971776A priority Critical patent/JPS5374385A/en
Publication of JPS5374385A publication Critical patent/JPS5374385A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 

Abstract

PURPOSE:To obtain a high dielectric strength as well as a high output by forming a depletion layer to enhance the drain dielectric strength inside the substrate and connecting in series the input MOSFET and the output junction type FET.
JP14971776A 1976-12-15 1976-12-15 Manufacture of field effect semiconductor device Pending JPS5374385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14971776A JPS5374385A (en) 1976-12-15 1976-12-15 Manufacture of field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14971776A JPS5374385A (en) 1976-12-15 1976-12-15 Manufacture of field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5374385A true JPS5374385A (en) 1978-07-01

Family

ID=15481272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14971776A Pending JPS5374385A (en) 1976-12-15 1976-12-15 Manufacture of field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5374385A (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563876A (en) * 1978-11-08 1980-05-14 Sony Corp Field-effect semiconductor device
JPS57103361A (en) * 1980-10-29 1982-06-26 Siemens Ag Mis controlled semiconductor element
WO1982002981A1 (en) * 1981-02-23 1982-09-02 Inc Motorola Mos power transistor
US4376286A (en) * 1978-10-13 1983-03-08 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4455565A (en) * 1980-02-22 1984-06-19 Rca Corporation Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode
US4593302A (en) * 1980-08-18 1986-06-03 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
US4680853A (en) * 1980-08-18 1987-07-21 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
US4705759A (en) * 1978-10-13 1987-11-10 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
JPS6323365A (en) * 1978-10-13 1988-01-30 インターナショナル・レクチファイヤー・コーポレーション Mosfet device
JPS6387771A (en) * 1987-07-17 1988-04-19 Nec Corp Field effect transistor
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4974059A (en) * 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
US5519244A (en) * 1979-05-25 1996-05-21 Hitachi, Ltd. Semiconductor device having aligned semiconductor regions and a plurality of MISFETs
US5663080A (en) * 1991-11-29 1997-09-02 Sgs-Thomson Microelectronics, S.R.L. Process for manufacturing MOS-type integrated circuits
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US5841167A (en) * 1995-12-28 1998-11-24 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device integrated structure
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US5981343A (en) * 1995-10-30 1999-11-09 Sgs-Thomas Microelectronics, S.R.L. Single feature size mos technology power device
US6030870A (en) * 1995-10-30 2000-02-29 Sgs-Thomson Microelectronics, S.R.L. High density MOS technology power device
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
US6492691B2 (en) 1998-05-26 2002-12-10 Stmicroelectronics S.R.L. High integration density MOS technology power device structure
JP2014140082A (en) * 2014-05-07 2014-07-31 Rohm Co Ltd Semiconductor device and method for manufacturing the same

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5191396A (en) * 1978-10-13 1993-03-02 International Rectifier Corp. High power mosfet with low on-resistance and high breakdown voltage
US5742087A (en) * 1978-10-13 1998-04-21 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4376286A (en) * 1978-10-13 1983-03-08 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5598018A (en) * 1978-10-13 1997-01-28 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4705759A (en) * 1978-10-13 1987-11-10 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
JPS6323365A (en) * 1978-10-13 1988-01-30 インターナショナル・レクチファイヤー・コーポレーション Mosfet device
JPS5563876A (en) * 1978-11-08 1980-05-14 Sony Corp Field-effect semiconductor device
US5519244A (en) * 1979-05-25 1996-05-21 Hitachi, Ltd. Semiconductor device having aligned semiconductor regions and a plurality of MISFETs
US4455565A (en) * 1980-02-22 1984-06-19 Rca Corporation Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode
US4593302A (en) * 1980-08-18 1986-06-03 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
US4680853A (en) * 1980-08-18 1987-07-21 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
JPS57103361A (en) * 1980-10-29 1982-06-26 Siemens Ag Mis controlled semiconductor element
WO1982002981A1 (en) * 1981-02-23 1982-09-02 Inc Motorola Mos power transistor
US4974059A (en) * 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
JPS6387771A (en) * 1987-07-17 1988-04-19 Nec Corp Field effect transistor
US5663080A (en) * 1991-11-29 1997-09-02 Sgs-Thomson Microelectronics, S.R.L. Process for manufacturing MOS-type integrated circuits
US5696399A (en) * 1991-11-29 1997-12-09 Sgs-Thomson Microelectronics S.R.L. Process for manufacturing MOS-type integrated circuits
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US6111297A (en) * 1995-02-24 2000-08-29 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US6046473A (en) * 1995-06-07 2000-04-04 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of MOS-gated power devices
US6030870A (en) * 1995-10-30 2000-02-29 Sgs-Thomson Microelectronics, S.R.L. High density MOS technology power device
US5985721A (en) * 1995-10-30 1999-11-16 Sgs-Thomson Microelectronics, S.R.L. Single feature size MOS technology power device
US5981343A (en) * 1995-10-30 1999-11-09 Sgs-Thomas Microelectronics, S.R.L. Single feature size mos technology power device
US6054737A (en) * 1995-10-30 2000-04-25 Sgs-Thomson Microelectronics S.R.L. High density MOS technology power device
US6064087A (en) * 1995-10-30 2000-05-16 Sgs-Thomson Microelectronics, S.R.L. Single feature size MOS technology power device
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
US6051862A (en) * 1995-12-28 2000-04-18 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device integrated structure
US5841167A (en) * 1995-12-28 1998-11-24 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device integrated structure
US6492691B2 (en) 1998-05-26 2002-12-10 Stmicroelectronics S.R.L. High integration density MOS technology power device structure
JP2014140082A (en) * 2014-05-07 2014-07-31 Rohm Co Ltd Semiconductor device and method for manufacturing the same

Similar Documents

Publication Publication Date Title
JPS5365078A (en) Production of junction type field effect transistor
JPS53121579A (en) Semiconductor integrated circuit
JPS5360582A (en) Semiconductor ingegrated circuit device
JPS5376676A (en) High breakdown voltage field effect power transistor
JPS53136489A (en) Mos semiconductor element of high dielectric strenght
JPS5211880A (en) Semiconductor integrated circuit device
JPS5220769A (en) Longitudinal semi-conductor unit
JPS5516480A (en) Insulating gate electrostatic effect transistor and semiconductor integrated circuit device
JPS5425678A (en) Field effect transistor of ultra high frequency and high output
JPS5322383A (en) Iil simiconductor device
JPS5439578A (en) Field effect semiconductor device of isolation gate type
JPS54101285A (en) Dual gate field effect transistor
JPS545391A (en) Manufacture of semiconductor device
JPS5323546A (en) Bias circuit
JPS5319766A (en) Preparation of field-effect type semiconductor device
JPS5378179A (en) Inverter circuit using field effect element
JPS53114683A (en) Field effect transistor of insulating gate type
JPS545392A (en) Semiconductor integrated circuit and its manufacture
JPS52137271A (en) Semiconductor device
JPS53126870A (en) Semiconductor device
JPS5339087A (en) Integrated circuit
JPS51139784A (en) Silicon gate mos semiconductor device
JPS534446A (en) Waveguide type field effect transistor
JPS5414688A (en) Semiconductor device
JPS53137677A (en) Junction type field effect transistor and its manufacture