CA1250511A - Technique d'etirage epitaxial de pellicules semiconductrices composites - Google Patents

Technique d'etirage epitaxial de pellicules semiconductrices composites

Info

Publication number: CA1250511A
Authority: CA; Canada
Prior art keywords: gallium; compound; growth; vapor stream; arsenic
Prior art date: 1984-10-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA000478159A

Other languages

English (en)

Inventor

Rajaram Bhat

Herbert M. Cox

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Iconectiv LLC

Original Assignee

Bell Communications Research Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-10-31

Filing date

1985-04-02

Publication date

1989-02-28

1985-04-02 Application filed by Bell Communications Research Inc filed Critical Bell Communications Research Inc

1989-02-28 Application granted granted Critical

1989-02-28 Publication of CA1250511A publication Critical patent/CA1250511A/fr

Status Expired legal-status Critical Current

Links

238000000034 method Methods 0.000 title claims abstract description 18
150000001875 compounds Chemical class 0.000 title claims abstract description 14
239000004065 semiconductor Substances 0.000 title abstract description 5
230000008021 deposition Effects 0.000 claims abstract description 12
239000007787 solid Substances 0.000 claims abstract description 9
229910052785 arsenic Inorganic materials 0.000 claims description 27
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 27
239000000758 substrate Substances 0.000 claims description 17
150000002902 organometallic compounds Chemical class 0.000 claims description 15
239000001257 hydrogen Substances 0.000 claims description 12
229910052739 hydrogen Inorganic materials 0.000 claims description 12
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 11
229910001218 Gallium arsenide Inorganic materials 0.000 claims description 11
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims description 5
-1 aluminum compound Chemical class 0.000 claims description 5
229910052733 gallium Inorganic materials 0.000 claims description 5
229910052782 aluminium Inorganic materials 0.000 claims description 4
150000002431 hydrogen Chemical class 0.000 claims description 4
238000009833 condensation Methods 0.000 claims description 3
230000005494 condensation Effects 0.000 claims description 3
238000007865 diluting Methods 0.000 claims description 3
XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 3
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 4
150000002259 gallium compounds Chemical class 0.000 claims 3
239000000463 material Substances 0.000 abstract description 20
RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract description 9
230000008901 benefit Effects 0.000 abstract description 5
230000008030 elimination Effects 0.000 abstract description 5
238000003379 elimination reaction Methods 0.000 abstract description 5
238000011109 contamination Methods 0.000 abstract description 3
231100000331 toxic Toxicity 0.000 abstract description 3
230000002588 toxic effect Effects 0.000 abstract description 3
238000002360 preparation method Methods 0.000 abstract description 2
238000000151 deposition Methods 0.000 description 10
238000006243 chemical reaction Methods 0.000 description 8
238000010438 heat treatment Methods 0.000 description 8
230000008016 vaporization Effects 0.000 description 6
150000004678 hydrides Chemical class 0.000 description 5
229910021478 group 5 element Inorganic materials 0.000 description 4
OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
238000005530 etching Methods 0.000 description 3
125000002524 organometallic group Chemical group 0.000 description 3
230000003071 parasitic effect Effects 0.000 description 3
239000010453 quartz Substances 0.000 description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
238000005229 chemical vapour deposition Methods 0.000 description 2
238000005238 degreasing Methods 0.000 description 2
230000001419 dependent effect Effects 0.000 description 2
239000007789 gas Substances 0.000 description 2
BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
238000009834 vaporization Methods 0.000 description 2
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
229910000673 Indium arsenide Inorganic materials 0.000 description 1
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
229910045601 alloy Inorganic materials 0.000 description 1
239000000956 alloy Substances 0.000 description 1
OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical compound Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
230000003935 attention Effects 0.000 description 1
229910052804 chromium Inorganic materials 0.000 description 1
239000011651 chromium Substances 0.000 description 1
230000001276 controlling effect Effects 0.000 description 1
238000005336 cracking Methods 0.000 description 1
238000000354 decomposition reaction Methods 0.000 description 1
SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
230000005669 field effect Effects 0.000 description 1
150000004820 halides Chemical class 0.000 description 1
238000011065 in-situ storage Methods 0.000 description 1
229910052738 indium Inorganic materials 0.000 description 1
RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
230000006698 induction Effects 0.000 description 1
238000003780 insertion Methods 0.000 description 1
230000037431 insertion Effects 0.000 description 1
229910052742 iron Inorganic materials 0.000 description 1
239000007788 liquid Substances 0.000 description 1
239000000203 mixture Substances 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 1
230000001105 regulatory effect Effects 0.000 description 1
SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
229910000058 selane Inorganic materials 0.000 description 1
229910000077 silane Inorganic materials 0.000 description 1
231100000419 toxicity Toxicity 0.000 description 1
230000001988 toxicity Effects 0.000 description 1
UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Inorganic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

CA000478159A 1984-10-31 1985-04-02 Technique d'etirage epitaxial de pellicules semiconductrices composites Expired CA1250511A (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US66683184A	1984-10-31	1984-10-31
US666,831		1984-10-31

Publications (1)

Publication Number	Publication Date
CA1250511A true CA1250511A (fr)	1989-02-28

Family

ID=24675668

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000478159A Expired CA1250511A (fr)	1984-10-31	1985-04-02	Technique d'etirage epitaxial de pellicules semiconductrices composites

Country Status (5)

Country	Link
EP (1)	EP0199736A1 (fr)
JP (1)	JPS62500695A (fr)
CA (1)	CA1250511A (fr)
ES (1)	ES8606523A1 (fr)
WO (1)	WO1986002776A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4740606A (en) *	1986-07-01	1988-04-26	Morton Thiokol, Inc.	Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films
US4792467A (en) *	1987-08-17	1988-12-20	Morton Thiokol, Inc.	Method for vapor phase deposition of gallium nitride film

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2100692A1 (de) *	1970-01-09	1971-07-15	Hitachi Ltd	Verfahren zum Herstellen einer epitaxisch gewachsenen Schicht eines GaAs tief 1 χ P tief χ Halbleitermaterial

1985
- 1985-04-02 CA CA000478159A patent/CA1250511A/fr not_active Expired
- 1985-08-07 EP EP19850903962 patent/EP0199736A1/fr not_active Withdrawn
- 1985-08-07 WO PCT/US1985/001483 patent/WO1986002776A1/fr not_active Ceased
- 1985-08-07 JP JP60503484A patent/JPS62500695A/ja active Pending
- 1985-10-30 ES ES548358A patent/ES8606523A1/es not_active Expired

Also Published As

Publication number	Publication date
WO1986002776A1 (fr)	1986-05-09
ES8606523A1 (es)	1986-04-16
ES548358A0 (es)	1986-04-16
EP0199736A1 (fr)	1986-11-05
JPS62500695A (ja)	1987-03-19

Legal Events

Date	Code	Title	Description
2006-02-28	MKEX	Expiry

Publication	Publication Date	Title
US4404265A (en)	1983-09-13	Epitaxial composite and method of making
US4368098A (en)	1983-01-11	Epitaxial composite and method of making
EP0202329B1 (fr)	1989-07-26	Methode de deposition par rayon chimique
US4950621A (en)	1990-08-21	Method of growing crystalline layers by vapor phase epitaxy
Tsang	1985	Chemical beam epitaxy of InGaAs
JPH0280572A (ja)	1990-03-20	アルシン、アンチモン及びホスフィン置換体
US4920068A (en)	1990-04-24	Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials
WO1986002776A1 (fr)	1986-05-09	Technique de developpement de films epitaxiaux semiconducteurs composites
EP0212910A2 (fr)	1987-03-04	Procédé et appareil pour le dépôt par décomposition de vapeur de semi-conducteurs III-V en utilisant des sources d'organométaux et de pnictides élémentaires
EP0204724B1 (fr)	1990-01-24	Procede de depot d'arseniure de gallium a partir de complexes de gallium-arsenic en phase vapeur
US4999223A (en)	1991-03-12	Chemical vapor deposition and chemicals with diarsines and polyarsines
US4729968A (en)	1988-03-08	Hydride deposition of phosporus-containing semiconductor materials avoiding hillock formation
EP0285834B1 (fr)	1991-10-16	Allyltellurures et leur emploi dans la croissance par MOCVD de films épitaxiaux de composés II-VI
US3461004A (en)	1969-08-12	Method of epitaxially growing layers of semiconducting compounds
JP3406504B2 (ja)	2003-05-12	半導体の製造方法
EP0141561B1 (fr)	1989-07-26	Procédé pour la production de composants ayant des compositions semi-isolantes basées sur le phosphure d'indium
US5900056A (en)	1999-05-04	Method for growing epitaxial layers of III-V compound semiconductors
JPH01141898A (ja)	1989-06-02	３−５族化合物半導体の気相成長方法
JPS647487B2 (fr)	1989-02-09
JPS61205696A (ja)	1986-09-11	３−５族化合物半導体の気相成長装置
JPH01141899A (ja)	1989-06-02	３−５族化合物半導体の気相成長方法
JPH01261818A (ja)	1989-10-18	高抵抗ＡｌＧａＡｓ混晶の気相成長方法
JPS63100736A (ja)	1988-05-02	不純物ド−プＺｎＳｅ系化合物半導体の製造方法
EP0296257A1 (fr)	1988-12-28	Composés mono-alkyl ramifiés des éléments du groupe VA comme sources d'éléments pour MOCVD
JPS60245214A (ja)	1985-12-05	化合物半導体結晶の気相成長方法