CA2021993A1 - Methode de dopage des impuretes et source de diffusion - Google Patents

Methode de dopage des impuretes et source de diffusion

Info

Publication number
CA2021993A1
CA2021993A1 CA2021993A CA2021993A CA2021993A1 CA 2021993 A1 CA2021993 A1 CA 2021993A1 CA 2021993 A CA2021993 A CA 2021993A CA 2021993 A CA2021993 A CA 2021993A CA 2021993 A1 CA2021993 A1 CA 2021993A1
Authority
CA
Canada
Prior art keywords
impurity
diffusion source
doping method
impurity doping
adsorption layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2021993A
Other languages
English (en)
Other versions
CA2021993C (fr
Inventor
Junichi Nishizawa
Kenji Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2021993A1 publication Critical patent/CA2021993A1/fr
Application granted granted Critical
Publication of CA2021993C publication Critical patent/CA2021993C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers

Landscapes

  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
CA002021993A 1989-07-27 1990-07-26 Methode de dopage des impuretes et source de diffusion Expired - Fee Related CA2021993C (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1-194648 1989-07-27
JP19468689 1989-07-27
US08/198,379 US5527733A (en) 1989-07-27 1994-02-18 Impurity doping method with adsorbed diffusion source

Publications (2)

Publication Number Publication Date
CA2021993A1 true CA2021993A1 (fr) 1991-01-28
CA2021993C CA2021993C (fr) 2000-03-28

Family

ID=26508666

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002021993A Expired - Fee Related CA2021993C (fr) 1989-07-27 1990-07-26 Methode de dopage des impuretes et source de diffusion

Country Status (5)

Country Link
US (1) US5527733A (fr)
EP (1) EP0413982B1 (fr)
CN (1) CN1049572A (fr)
AU (1) AU5977190A (fr)
CA (1) CA2021993C (fr)

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US20030194825A1 (en) * 2002-04-10 2003-10-16 Kam Law Deposition of gate metallization for active matrix liquid crystal display (AMLCD) applications
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US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
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US8501594B2 (en) * 2003-10-10 2013-08-06 Applied Materials, Inc. Methods for forming silicon germanium layers
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US7132338B2 (en) * 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
US7078302B2 (en) * 2004-02-23 2006-07-18 Applied Materials, Inc. Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal
CA2568002A1 (fr) * 2004-06-24 2006-01-05 Beneq Oy Procede de dopage de materiau et materiau dope
US7682940B2 (en) 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
US7312128B2 (en) * 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
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US7235492B2 (en) * 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
US7648927B2 (en) 2005-06-21 2010-01-19 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US20060286774A1 (en) * 2005-06-21 2006-12-21 Applied Materials. Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7651955B2 (en) * 2005-06-21 2010-01-26 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
WO2007035660A1 (fr) * 2005-09-20 2007-03-29 Applied Materials, Inc. Procédé de fabrication d’un dispositif sur un substrat soi
US7674337B2 (en) * 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
WO2008033186A1 (fr) * 2006-07-31 2008-03-20 Applied Materials, Inc. Procédés de gestion de la morphologie pendant la formation de couche épitaxiale
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US20090203197A1 (en) * 2008-02-08 2009-08-13 Hiroji Hanawa Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition
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US8071451B2 (en) * 2009-07-29 2011-12-06 Axcelis Technologies, Inc. Method of doping semiconductors
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CN104538300A (zh) * 2014-12-19 2015-04-22 扬州国宇电子有限公司 一种通过掺杂二氧化硅膜调整肖特基二极管势垒高度的工艺方法

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Also Published As

Publication number Publication date
CN1049572A (zh) 1991-02-27
EP0413982A1 (fr) 1991-02-27
AU5977190A (en) 1991-01-31
CA2021993C (fr) 2000-03-28
US5527733A (en) 1996-06-18
EP0413982B1 (fr) 1997-05-14

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