CA2066193A1 - Procede pour l'application d'une couche mince de silicone sur un substrat isolant - Google Patents

Procede pour l'application d'une couche mince de silicone sur un substrat isolant

Info

Publication number
CA2066193A1
CA2066193A1 CA2066193A CA2066193A CA2066193A1 CA 2066193 A1 CA2066193 A1 CA 2066193A1 CA 2066193 A CA2066193 A CA 2066193A CA 2066193 A CA2066193 A CA 2066193A CA 2066193 A1 CA2066193 A1 CA 2066193A1
Authority
CA
Canada
Prior art keywords
silicon
wafer
strained
prime
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2066193A
Other languages
English (en)
Other versions
CA2066193C (fr
Inventor
David J. Godbey
Harold L. Hughes
Francis J. Kub
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Department of Navy
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2066193A1 publication Critical patent/CA2066193A1/fr
Application granted granted Critical
Publication of CA2066193C publication Critical patent/CA2066193C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1922—Preparing SOI wafers using silicon etch back techniques, e.g. BESOI or ELTRAN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/97—Specified etch stop material

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Recrystallisation Techniques (AREA)
  • Drying Of Semiconductors (AREA)
CA002066193A 1989-09-29 1990-09-28 Procede pour l'application d'une couche mince de silicone sur un substrat isolant Expired - Fee Related CA2066193C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US414,225 1989-09-29
US07/414,225 US5013681A (en) 1989-09-29 1989-09-29 Method of producing a thin silicon-on-insulator layer

Publications (2)

Publication Number Publication Date
CA2066193A1 true CA2066193A1 (fr) 1991-03-30
CA2066193C CA2066193C (fr) 1993-10-12

Family

ID=23640518

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002066193A Expired - Fee Related CA2066193C (fr) 1989-09-29 1990-09-28 Procede pour l'application d'une couche mince de silicone sur un substrat isolant

Country Status (6)

Country Link
US (1) US5013681A (fr)
EP (1) EP0493503A1 (fr)
JP (1) JP2684455B2 (fr)
KR (1) KR950006967B1 (fr)
CA (1) CA2066193C (fr)
WO (1) WO1991005366A1 (fr)

Families Citing this family (225)

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EP0493503A1 (fr) 1992-07-08
KR950006967B1 (ko) 1995-06-26
US5013681A (en) 1991-05-07
KR920704334A (ko) 1992-12-19
CA2066193C (fr) 1993-10-12

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