CH403086A - Verfahren zur Herstellung eines Transistors, insbesondere für Schaltzwecke - Google Patents

Verfahren zur Herstellung eines Transistors, insbesondere für Schaltzwecke

Info

Publication number
CH403086A
CH403086A CH97661A CH97661A CH403086A CH 403086 A CH403086 A CH 403086A CH 97661 A CH97661 A CH 97661A CH 97661 A CH97661 A CH 97661A CH 403086 A CH403086 A CH 403086A
Authority
CH
Switzerland
Prior art keywords
transistor
producing
switching purposes
switching
purposes
Prior art date
Application number
CH97661A
Other languages
English (en)
Inventor
Wilhelmus Jochems Pie Johannes
Willem Memelink Oscar
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH403086A publication Critical patent/CH403086A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/062—Gold diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/929—Electrical contact feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/939—Molten or fused coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)
CH97661A 1960-01-30 1961-01-27 Verfahren zur Herstellung eines Transistors, insbesondere für Schaltzwecke CH403086A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL247918 1960-01-30

Publications (1)

Publication Number Publication Date
CH403086A true CH403086A (de) 1965-11-30

Family

ID=19752148

Family Applications (1)

Application Number Title Priority Date Filing Date
CH97661A CH403086A (de) 1960-01-30 1961-01-27 Verfahren zur Herstellung eines Transistors, insbesondere für Schaltzwecke

Country Status (6)

Country Link
US (1) US3172785A (de)
CH (1) CH403086A (de)
DE (1) DE1168567B (de)
ES (1) ES264383A1 (de)
GB (1) GB958521A (de)
NL (2) NL247918A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3310858A (en) * 1963-12-12 1967-03-28 Bell Telephone Labor Inc Semiconductor diode and method of making
DE1282190B (de) * 1964-03-12 1968-11-07 Kabusihiki Kaisha Hitachi Seis Verfahren zum Herstellen von Transistoren
US4050966A (en) * 1968-12-20 1977-09-27 Siemens Aktiengesellschaft Method for the preparation of diffused silicon semiconductor components
US3972113A (en) * 1973-05-14 1976-08-03 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2813233A (en) * 1954-07-01 1957-11-12 Bell Telephone Labor Inc Semiconductive device
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies
DK91082C (da) * 1955-11-01 1961-06-12 Philips Nv Halvlederorgan, f. eks. krystaldiode eller transistor, samt fremgangsmåder til fremstilling af et sådant organ.
DE1058632B (de) * 1955-12-03 1959-06-04 Deutsche Bundespost Verfahren zur beliebigen Verringerung des Sperrwiderstandes einer Legierungs-elektrode von Halbleiteranordnungen
BE580254A (de) * 1958-07-17
NL230316A (de) * 1958-08-07

Also Published As

Publication number Publication date
ES264383A1 (es) 1961-04-01
NL121713C (de)
US3172785A (en) 1965-03-09
GB958521A (en) 1964-05-21
NL247918A (de)
DE1168567B (de) 1964-04-23

Similar Documents

Publication Publication Date Title
CH412821A (de) Verfahren zum Herstellen von einkristallinen, insbesondere dünnen, halbleitenden Schichten
CH430049A (de) Verfahren zur Herstellung eines absorbierbaren Hämostatikums
CH413111A (de) Verfahren zur Herstellung eines Transistors
CH376186A (de) Verfahren zur Herstellung einer Halbleitervorrichtung, insbesondere eines Transistors
CH370165A (de) Verfahren zur Herstellung einer Halbleitervorrichtung, insbesondere eines Transistors
CH409379A (de) Verfahren zur Herstellung formgepresster Gegenstände
CH412817A (de) Verfahren zur Herstellung eines dendritischen Kristalls
AT245040B (de) Verfahren zum Herstellen eines einkristallinen Halbleiterkörpers
CH425215A (de) Verfahren zur Herstellung eines gehärteten Harzfilmes
CH386192A (de) Verbindungsmuffe, insbesondere für Rohre aus Kunststoff
CH491886A (de) Verfahren zur Herstellung eines Pregnadiens
AT262473B (de) Verfahren zur Herstellung eines Backfettzusatzes
CH401919A (de) Verfahren zum Herstellen von langgestreckten, insbesondere bandförmigen Halbleiterkörpern
CH404810A (de) Verfahren zur Herstellung eines Transistors und durch dieses Verfahren hergestellter Transistor
AT244582B (de) Verfahren zur Herstellung eines organischen Kunststoffmaterials
AT267571B (de) Verfahren zur Herstellung von Bleistählen, insbesondere Automatenstählen
CH472455A (de) Verfahren zur Herstellung eines gehärteten Kunststoffs
CH381325A (de) Verfahren zur Herstellung einer Halbleitervorrichtung z. B. eines Transistors
CH367562A (de) Verfahren zur Herstellung eines kunstharzisolierten Transformators, insbesondere eines Wandlers
CH398230A (de) Handbetätigungsorgan, insbesondere für Ventile
CH417773A (de) Halbleiterbauelement in Form einer Halbleiterdiode, insbesondere für niedrige Ströme, Verfahren zum Herstellen eines solchen und Mittel zur Ausführung dieses Verfahrens
CH355528A (de) Verfahren zur Dotierung von Halbleiterkristallen für Halbleiterbauelemente, insbesondere Transistoren
AT263086B (de) Verfahren zur Herstellung einer Halbleitervorrichtung insbesondere einer Kristalldiode oder eines Transistors
CH362749A (de) Verfahren zur Herstellung von p-n-p-n-Halbleiterkörpern, insbesondere für Kippdioden
CH388459A (de) Verfahren zur Herstellung eines Transistors