CN100465795C - 周缘曝光装置、涂敷显影装置及周缘曝光方法 - Google Patents

周缘曝光装置、涂敷显影装置及周缘曝光方法 Download PDF

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Publication number
CN100465795C
CN100465795C CNB2006100803180A CN200610080318A CN100465795C CN 100465795 C CN100465795 C CN 100465795C CN B2006100803180 A CNB2006100803180 A CN B2006100803180A CN 200610080318 A CN200610080318 A CN 200610080318A CN 100465795 C CN100465795 C CN 100465795C
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CN
China
Prior art keywords
optical path
path forming
forming member
substrate
light source
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Expired - Lifetime
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CNB2006100803180A
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English (en)
Chinese (zh)
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CN1862387A (zh
Inventor
岩下泰治
下村一郎
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN1862387A publication Critical patent/CN1862387A/zh
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Publication of CN100465795C publication Critical patent/CN100465795C/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNB2006100803180A 2005-05-09 2006-05-09 周缘曝光装置、涂敷显影装置及周缘曝光方法 Expired - Lifetime CN100465795C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005136575A JP4642543B2 (ja) 2005-05-09 2005-05-09 周縁露光装置、塗布、現像装置及び周縁露光方法
JP2005136575 2005-05-09

Publications (2)

Publication Number Publication Date
CN1862387A CN1862387A (zh) 2006-11-15
CN100465795C true CN100465795C (zh) 2009-03-04

Family

ID=36808766

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100803180A Expired - Lifetime CN100465795C (zh) 2005-05-09 2006-05-09 周缘曝光装置、涂敷显影装置及周缘曝光方法

Country Status (7)

Country Link
US (1) US7573054B2 (2)
EP (1) EP1722402B1 (2)
JP (1) JP4642543B2 (2)
KR (1) KR101105568B1 (2)
CN (1) CN100465795C (2)
DE (1) DE602006015126D1 (2)
TW (1) TW200710583A (2)

Cited By (1)

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CN108227398A (zh) * 2016-12-13 2018-06-29 东京毅力科创株式会社 光处理装置和基板处理装置

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KR100733137B1 (ko) * 2006-06-14 2007-06-28 삼성전자주식회사 웨이퍼 에지 노광 장치
US7659965B2 (en) * 2006-10-06 2010-02-09 Wafertech, Llc High throughput wafer stage design for optical lithography exposure apparatus
CN101216679B (zh) * 2007-12-28 2011-03-30 上海微电子装备有限公司 一种边缘曝光装置
US7901854B2 (en) * 2009-05-08 2011-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer edge exposure unit
US8625076B2 (en) * 2010-02-09 2014-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer edge exposure module
JP5327135B2 (ja) * 2010-05-11 2013-10-30 東京エレクトロン株式会社 周縁露光装置及び周縁露光方法
CN103034062B (zh) * 2011-09-29 2014-11-26 中芯国际集成电路制造(北京)有限公司 用于晶片边缘曝光的方法、光学模块和自动聚焦系统
US9196515B2 (en) 2012-03-26 2015-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Litho cluster and modulization to enhance productivity
US8903532B2 (en) * 2012-03-26 2014-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Litho cluster and modulization to enhance productivity
JP5873907B2 (ja) * 2013-09-03 2016-03-01 キヤノン・コンポーネンツ株式会社 照明装置、イメージセンサユニット、画像読取装置および画像形成装置
US9287151B2 (en) * 2014-01-10 2016-03-15 Taiwan Semiconductor Manufacturing Co., Ltd Systems and method for transferring a semiconductor substrate
US9891529B2 (en) * 2014-03-28 2018-02-13 Taiwan Semiconductor Manufacturing Co., Ltd Light transmission device and method for semiconductor manufacturing process
JP6661270B2 (ja) * 2015-01-16 2020-03-11 キヤノン株式会社 露光装置、露光システム、および物品の製造方法
JP6444909B2 (ja) * 2016-02-22 2018-12-26 東京エレクトロン株式会社 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記録媒体
US10558125B2 (en) * 2016-11-17 2020-02-11 Tokyo Electron Limited Exposure apparatus, exposure apparatus adjustment method and storage medium
US10747121B2 (en) * 2016-12-13 2020-08-18 Tokyo Electron Limited Optical processing apparatus and substrate processing apparatus
CN108803245B (zh) * 2017-04-28 2020-04-10 上海微电子装备（集团）股份有限公司 硅片处理装置及方法
US10295909B2 (en) 2017-09-26 2019-05-21 Taiwan Semiconductor Manufacturing Co., Ltd. Edge-exposure tool with an ultraviolet (UV) light emitting diode (LED)
JP7312692B2 (ja) * 2019-12-25 2023-07-21 株式会社Ｓｃｒｅｅｎホールディングス エッジ露光装置およびエッジ露光方法
CN111427231A (zh) * 2020-04-09 2020-07-17 深圳市华星光电半导体显示技术有限公司 掩膜板和新型产线
CN112799282A (zh) * 2020-12-30 2021-05-14 六安优云通信技术有限公司 一种电源芯片制造用晶圆光刻显影蚀刻装置及其制备工艺
KR102951220B1 (ko) * 2023-05-19 2026-04-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

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Publication number Priority date Publication date Assignee Title
EP0788032A1 (en) * 1996-02-05 1997-08-06 Ushiodenki Kabushiki Kaisha Process for exposing a peripheral area of a wafer and a device for executing the process
US6240874B1 (en) * 1999-05-27 2001-06-05 Advanced Micro Devices, Inc. Integrated edge exposure and hot/cool plate for a wafer track system
KR20040011792A (ko) * 2002-07-30 2004-02-11 주식회사 실리콘 테크 기판 주변 노광 장치
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EP0788032A1 (en) * 1996-02-05 1997-08-06 Ushiodenki Kabushiki Kaisha Process for exposing a peripheral area of a wafer and a device for executing the process
US6240874B1 (en) * 1999-05-27 2001-06-05 Advanced Micro Devices, Inc. Integrated edge exposure and hot/cool plate for a wafer track system
KR20040011792A (ko) * 2002-07-30 2004-02-11 주식회사 실리콘 테크 기판 주변 노광 장치
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108227398A (zh) * 2016-12-13 2018-06-29 东京毅力科创株式会社 光处理装置和基板处理装置

Also Published As

Publication number Publication date
TWI334061B (2) 2010-12-01
US20060250594A1 (en) 2006-11-09
US7573054B2 (en) 2009-08-11
EP1722402A2 (en) 2006-11-15
DE602006015126D1 (de) 2010-08-12
EP1722402B1 (en) 2010-06-30
CN1862387A (zh) 2006-11-15
KR101105568B1 (ko) 2012-01-17
JP2006313862A (ja) 2006-11-16
JP4642543B2 (ja) 2011-03-02
EP1722402A3 (en) 2007-08-01
TW200710583A (en) 2007-03-16
KR20060116167A (ko) 2006-11-14

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