CN100524632C - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN100524632C
CN100524632C CNB200610063646XA CN200610063646A CN100524632C CN 100524632 C CN100524632 C CN 100524632C CN B200610063646X A CNB200610063646X A CN B200610063646XA CN 200610063646 A CN200610063646 A CN 200610063646A CN 100524632 C CN100524632 C CN 100524632C
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Prior art keywords
metal layer
semiconductor wafer
heat treatment
semiconductor device
manufacturing
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CNB200610063646XA
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Chinese (zh)
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CN101009221A (zh
Inventor
松村民雄
辻野忠
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN101009221A publication Critical patent/CN101009221A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01361—Chemical or physical modification, e.g. by sintering or anodisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor

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  • Electrodes Of Semiconductors (AREA)
CNB200610063646XA 2006-01-23 2006-12-29 半导体装置的制造方法 Active CN100524632C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006013349 2006-01-23
JP2006013349A JP2007194514A (ja) 2006-01-23 2006-01-23 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
CN101009221A CN101009221A (zh) 2007-08-01
CN100524632C true CN100524632C (zh) 2009-08-05

Family

ID=38282344

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB200610063646XA Active CN100524632C (zh) 2006-01-23 2006-12-29 半导体装置的制造方法

Country Status (7)

Country Link
US (1) US8183144B2 (2)
JP (1) JP2007194514A (2)
KR (1) KR100823648B1 (2)
CN (1) CN100524632C (2)
AT (1) AT503190B1 (2)
DE (1) DE102006062029B4 (2)
TW (1) TW200737382A (2)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4221012B2 (ja) * 2006-06-12 2009-02-12 トヨタ自動車株式会社 半導体装置とその製造方法
WO2009141740A2 (en) * 2008-05-23 2009-11-26 Florian Bieck Semiconductor wafer and method for producing the same
JP2010021171A (ja) * 2008-07-08 2010-01-28 Renesas Technology Corp 半導体装置の製造方法およびそれに用いる半導体製造装置
JPWO2010109572A1 (ja) * 2009-03-23 2012-09-20 トヨタ自動車株式会社 半導体装置
JP5545000B2 (ja) * 2010-04-14 2014-07-09 富士電機株式会社 半導体装置の製造方法
JP2012248572A (ja) * 2011-05-25 2012-12-13 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
KR101923127B1 (ko) * 2011-09-08 2018-11-28 후지 덴키 가부시키가이샤 반도체 장치 및 반도체 장치의 제조방법
JP6289104B2 (ja) * 2014-01-08 2018-03-07 日東電工株式会社 フィルム状接着剤、フィルム状接着剤付きダイシングテープ、半導体装置の製造方法、及び半導体装置
CN108352298B (zh) * 2015-11-09 2023-04-18 应用材料公司 底部处理
JP2023073724A (ja) * 2021-11-16 2023-05-26 株式会社フルヤ金属 半導体デバイス及びそれに用いる酸化防止用金属材料並びに該金属材料のスパッタリングターゲット及び蒸着源

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1149606A (en) 1967-02-27 1969-04-23 Motorola Inc Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses
JPS5950090B2 (ja) * 1977-07-07 1984-12-06 三菱電機株式会社 半導体装置の製造方法
JPS55111140A (en) * 1979-02-20 1980-08-27 Nec Corp Metalizing method for back surface of silicon wafer
JPS58106825A (ja) * 1981-12-18 1983-06-25 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
DE3301666A1 (de) 1983-01-20 1984-07-26 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zur herstellung einer mehrschichtigen kontaktmetallisierung
DD277602A3 (de) 1987-12-21 1990-04-11 Akad Wissenschaften Ddr Verfahren zur Herstellung eines weichlötfähigen Mehrschichtkontaktsystems für Halbleiterbauelemente
DE3823347A1 (de) 1988-07-09 1990-01-11 Semikron Elektronik Gmbh Leistungs-halbleiterelement
US5342793A (en) * 1990-02-20 1994-08-30 Sgs-Thomson Microelectronics, S.R.L. Process for obtaining multi-layer metallization of the back of a semiconductor substrate
JPH0472764A (ja) 1990-07-13 1992-03-06 Sharp Corp 半導体装置の裏面電極
JP3127494B2 (ja) * 1991-07-17 2001-01-22 株式会社デンソー 半導体装置の電極形成方法
DE69223868T2 (de) 1991-07-17 1998-09-03 Denso Corp Verfahren zur Herstellung von Elektroden eines Halbleiterbauelements
KR930017092A (ko) * 1992-01-15 1993-08-30 김광호 반도체장치 및 그 제조방법
JPH0637301A (ja) * 1992-07-20 1994-02-10 Toyota Motor Corp 半導体装置及びその製造方法
US5924002A (en) * 1994-12-22 1999-07-13 Sony Corporation Method of manufacturing a semiconductor device having ohmic electrode
DE19527209A1 (de) * 1995-07-27 1997-01-30 Philips Patentverwaltung Halbleitervorrichtung
US6140703A (en) * 1996-08-05 2000-10-31 Motorola, Inc. Semiconductor metallization structure
DE19734434C1 (de) 1997-08-08 1998-12-10 Siemens Ag Halbleiterkörper mit Rückseitenmetallisierung und Verfahren zu deren Herstellung
KR100365436B1 (ko) * 1998-12-15 2003-04-10 주식회사 하이닉스반도체 반도체장치의배리어층형성방법
JP3960739B2 (ja) 2000-07-11 2007-08-15 シャープ株式会社 半導体装置とその製造方法
KR100724143B1 (ko) * 2001-01-17 2007-06-04 매그나칩 반도체 유한회사 반도체장치의 배리어층 형성방법
JP2003059860A (ja) * 2001-08-13 2003-02-28 Mitsubishi Electric Corp 半導体装置
JP2003282845A (ja) * 2002-03-20 2003-10-03 Mitsubishi Electric Corp 炭化ケイ素基板の製造方法およびその製造方法により製造された炭化ケイ素基板、ならびに、ショットキーバリアダイオードおよび炭化ケイ素薄膜の製造方法
JP2003338620A (ja) * 2002-05-22 2003-11-28 Mitsubishi Electric Corp 半導体装置およびその製造方法
CN100454492C (zh) 2002-06-13 2009-01-21 衡阳科晶微电子有限公司 共晶焊背面金属化工艺
JP2004153081A (ja) * 2002-10-31 2004-05-27 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハ及びｓｏｉウエーハの製造方法
KR100477396B1 (ko) * 2002-09-04 2005-03-28 한국전기연구원 금속 게이트 전극을 갖는 탄화규소 모스펫 소자 및 그제조방법
AU2003275614A1 (en) * 2002-10-30 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI247576B (en) * 2003-03-28 2006-01-11 Hon Hai Prec Ind Co Ltd Method of manufacturing electromagnetic interference shield
JP4049035B2 (ja) * 2003-06-27 2008-02-20 株式会社デンソー 半導体装置の製造方法
JP3767585B2 (ja) 2003-07-11 2006-04-19 株式会社デンソー 半導体装置
US7214620B2 (en) * 2003-10-28 2007-05-08 Samsung Electronics Co., Ltd. Methods of forming silicide films with metal films in semiconductor devices and contacts including the same
JP4792694B2 (ja) * 2003-11-13 2011-10-12 セイコーエプソン株式会社 電気光学装置用基板の製造方法、電気光学装置用基板、電気光学装置、電子機器
US20050268963A1 (en) * 2004-02-24 2005-12-08 David Jordan Process for manufacturing photovoltaic cells
JP4788390B2 (ja) * 2005-06-07 2011-10-05 株式会社デンソー 半導体装置の製造方法

Also Published As

Publication number Publication date
CN101009221A (zh) 2007-08-01
AT503190A2 (de) 2007-08-15
AT503190B1 (de) 2010-03-15
US20070173045A1 (en) 2007-07-26
KR20070077450A (ko) 2007-07-26
AT503190A3 (de) 2008-05-15
KR100823648B1 (ko) 2008-04-21
DE102006062029A1 (de) 2007-08-09
US8183144B2 (en) 2012-05-22
JP2007194514A (ja) 2007-08-02
TW200737382A (en) 2007-10-01
DE102006062029B4 (de) 2010-04-08

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