TW200737382A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device

Info

Publication number
TW200737382A
TW200737382A TW095143544A TW95143544A TW200737382A TW 200737382 A TW200737382 A TW 200737382A TW 095143544 A TW095143544 A TW 095143544A TW 95143544 A TW95143544 A TW 95143544A TW 200737382 A TW200737382 A TW 200737382A
Authority
TW
Taiwan
Prior art keywords
back surface
semiconductor device
metal layer
manufacturing semiconductor
thermal processing
Prior art date
Application number
TW095143544A
Other languages
English (en)
Chinese (zh)
Inventor
Tamio Matsumura
Tadashi Tsujino
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW200737382A publication Critical patent/TW200737382A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01361—Chemical or physical modification, e.g. by sintering or anodisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor

Landscapes

  • Electrodes Of Semiconductors (AREA)
TW095143544A 2006-01-23 2006-11-24 Method of manufacturing semiconductor device TW200737382A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006013349A JP2007194514A (ja) 2006-01-23 2006-01-23 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW200737382A true TW200737382A (en) 2007-10-01

Family

ID=38282344

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095143544A TW200737382A (en) 2006-01-23 2006-11-24 Method of manufacturing semiconductor device

Country Status (7)

Country Link
US (1) US8183144B2 (2)
JP (1) JP2007194514A (2)
KR (1) KR100823648B1 (2)
CN (1) CN100524632C (2)
AT (1) AT503190B1 (2)
DE (1) DE102006062029B4 (2)
TW (1) TW200737382A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI463548B (zh) * 2008-05-23 2014-12-01 迪思科股份有限公司 半導體晶圓及其製造方法

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JP4221012B2 (ja) * 2006-06-12 2009-02-12 トヨタ自動車株式会社 半導体装置とその製造方法
JP2010021171A (ja) * 2008-07-08 2010-01-28 Renesas Technology Corp 半導体装置の製造方法およびそれに用いる半導体製造装置
JPWO2010109572A1 (ja) * 2009-03-23 2012-09-20 トヨタ自動車株式会社 半導体装置
JP5545000B2 (ja) * 2010-04-14 2014-07-09 富士電機株式会社 半導体装置の製造方法
JP2012248572A (ja) * 2011-05-25 2012-12-13 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
KR101923127B1 (ko) * 2011-09-08 2018-11-28 후지 덴키 가부시키가이샤 반도체 장치 및 반도체 장치의 제조방법
JP6289104B2 (ja) * 2014-01-08 2018-03-07 日東電工株式会社 フィルム状接着剤、フィルム状接着剤付きダイシングテープ、半導体装置の製造方法、及び半導体装置
CN108352298B (zh) * 2015-11-09 2023-04-18 应用材料公司 底部处理
JP2023073724A (ja) * 2021-11-16 2023-05-26 株式会社フルヤ金属 半導体デバイス及びそれに用いる酸化防止用金属材料並びに該金属材料のスパッタリングターゲット及び蒸着源

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KR100477396B1 (ko) * 2002-09-04 2005-03-28 한국전기연구원 금속 게이트 전극을 갖는 탄화규소 모스펫 소자 및 그제조방법
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US20050268963A1 (en) * 2004-02-24 2005-12-08 David Jordan Process for manufacturing photovoltaic cells
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI463548B (zh) * 2008-05-23 2014-12-01 迪思科股份有限公司 半導體晶圓及其製造方法

Also Published As

Publication number Publication date
CN101009221A (zh) 2007-08-01
AT503190A2 (de) 2007-08-15
AT503190B1 (de) 2010-03-15
US20070173045A1 (en) 2007-07-26
KR20070077450A (ko) 2007-07-26
AT503190A3 (de) 2008-05-15
KR100823648B1 (ko) 2008-04-21
CN100524632C (zh) 2009-08-05
DE102006062029A1 (de) 2007-08-09
US8183144B2 (en) 2012-05-22
JP2007194514A (ja) 2007-08-02
DE102006062029B4 (de) 2010-04-08

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