CN1287224C - 投影曝光装置 - Google Patents

投影曝光装置 Download PDF

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Publication number
CN1287224C
CN1287224C CNB2004100037498A CN200410003749A CN1287224C CN 1287224 C CN1287224 C CN 1287224C CN B2004100037498 A CNB2004100037498 A CN B2004100037498A CN 200410003749 A CN200410003749 A CN 200410003749A CN 1287224 C CN1287224 C CN 1287224C
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CN
China
Prior art keywords
mask
pattern
exposed
exposure
mask pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100037498A
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English (en)
Chinese (zh)
Other versions
CN1519651A (zh
Inventor
饭塚和央
磯端純二
田中信义
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN1519651A publication Critical patent/CN1519651A/zh
Application granted granted Critical
Publication of CN1287224C publication Critical patent/CN1287224C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNB2004100037498A 2003-01-31 2004-01-30 投影曝光装置 Expired - Fee Related CN1287224C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP025086/2003 2003-01-31
JP2003025086A JP3689698B2 (ja) 2003-01-31 2003-01-31 投影露光装置、投影露光方法および被露光部材の製造方法

Publications (2)

Publication Number Publication Date
CN1519651A CN1519651A (zh) 2004-08-11
CN1287224C true CN1287224C (zh) 2006-11-29

Family

ID=32652941

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100037498A Expired - Fee Related CN1287224C (zh) 2003-01-31 2004-01-30 投影曝光装置

Country Status (7)

Country Link
US (1) US7158210B2 (fr)
EP (1) EP1443364B1 (fr)
JP (1) JP3689698B2 (fr)
KR (1) KR100610467B1 (fr)
CN (1) CN1287224C (fr)
DE (1) DE602004009843T2 (fr)
TW (1) TWI249183B (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100361112C (zh) * 2005-02-05 2008-01-09 上海微电子装备有限公司 步进扫描投影光刻机同步总线控制方法
JP5458372B2 (ja) 2009-04-03 2014-04-02 株式会社ブイ・テクノロジー 露光方法及び露光装置
US8339573B2 (en) * 2009-05-27 2012-12-25 3M Innovative Properties Company Method and apparatus for photoimaging a substrate
WO2012044077A2 (fr) * 2010-09-29 2012-04-05 동우화인켐 주식회사 Système d'exposition à la lumière
NL2007615A (en) * 2010-11-30 2012-05-31 Asml Netherlands Bv Method of operating a patterning device and lithographic apparatus.
CN102540747A (zh) * 2010-12-22 2012-07-04 上海微电子装备有限公司 投影式光刻机三维掩模曝光方法
JP2014107383A (ja) 2012-11-27 2014-06-09 Renesas Electronics Corp マスクおよびその製造方法、ならびに半導体装置
US9006040B2 (en) * 2013-03-13 2015-04-14 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for fabricating semiconductor devices having larger die dimensions
CN106164778B (zh) * 2014-04-28 2018-02-09 Asml荷兰有限公司 估计图案形成装置的变形和/或其位置的改变
CN107728435B (zh) * 2017-11-14 2020-03-27 扬州扬杰电子科技股份有限公司 一种硅晶片光刻曝光方法
CN108594602B (zh) * 2018-04-26 2020-12-22 武汉华星光电技术有限公司 曝光设备
EP4356199A4 (fr) * 2021-06-14 2025-05-21 Applied Materials, Inc. Lissage de limites d'unités d'exposition de lithographie numérique
CN118859640B (zh) * 2024-07-05 2025-06-10 中国科学院长春光学精密机械与物理研究所 百纳米级光子晶体的制备方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59101831A (ja) 1982-12-01 1984-06-12 Canon Inc 半導体焼付露光装置
US4878086A (en) 1985-04-01 1989-10-31 Canon Kabushiki Kaisha Flat panel display device and manufacturing of the same
US4676630A (en) 1985-04-25 1987-06-30 Canon Kabushiki Kaisha Exposure apparatus
JPH0622192B2 (ja) 1985-04-25 1994-03-23 キヤノン株式会社 表示パネル製造方法
US4749867A (en) 1985-04-30 1988-06-07 Canon Kabushiki Kaisha Exposure apparatus
US4748477A (en) 1985-04-30 1988-05-31 Canon Kabushiki Kaisha Exposure apparatus
US4708466A (en) 1986-02-07 1987-11-24 Canon Kabushiki Kaisha Exposure apparatus
JPH0423311A (ja) 1990-05-14 1992-01-27 Matsushita Electron Corp パターン転写方法
JPH04122013A (ja) 1990-09-13 1992-04-22 Canon Inc 露光装置
JP2862385B2 (ja) 1991-03-13 1999-03-03 キヤノン株式会社 露光装置
JP3275368B2 (ja) * 1992-07-09 2002-04-15 株式会社ニコン 露光方法及び装置
US5705299A (en) 1992-12-16 1998-01-06 Texas Instruments Incorporated Large die photolithography
US6078381A (en) 1993-02-01 2000-06-20 Nikon Corporation Exposure method and apparatus
KR100296778B1 (ko) 1993-06-11 2001-10-24 오노 시게오 노광장치및그장치를사용하는소자제조방법
SG102627A1 (en) 1996-11-28 2004-03-26 Nikon Corp Lithographic device
US5976741A (en) * 1997-10-21 1999-11-02 Vsli Technology, Inc. Methods for determining illumination exposure dosage
JPH11219900A (ja) 1997-11-14 1999-08-10 Nikon Corp 露光装置及び露光方法
KR100574208B1 (ko) * 1998-06-02 2006-04-27 가부시키가이샤 니콘 주사형 노광장치 및 그의 제조방법, 및 디바이스 제조방법
JP2000208410A (ja) 1999-01-19 2000-07-28 Sony Corp 露光装置と拡散反射板及び反射型表示装置
JP4100799B2 (ja) 1999-01-25 2008-06-11 キヤノン株式会社 マスクパターン転写方法、マスクパターン転写装置、デバイス製造方法及び転写マスク
TW447009B (en) * 1999-02-12 2001-07-21 Nippon Kogaku Kk Scanning exposure method and scanning type exposure device
JP2001077002A (ja) 1999-09-02 2001-03-23 Nikon Corp 荷電粒子ビーム露光方法、荷電粒子ビーム露光装置及び半導体デバイス製造方法

Also Published As

Publication number Publication date
CN1519651A (zh) 2004-08-11
US7158210B2 (en) 2007-01-02
EP1443364A2 (fr) 2004-08-04
KR100610467B1 (ko) 2006-08-08
JP3689698B2 (ja) 2005-08-31
EP1443364B1 (fr) 2007-11-07
KR20040070038A (ko) 2004-08-06
DE602004009843D1 (de) 2007-12-20
TW200423199A (en) 2004-11-01
JP2004233893A (ja) 2004-08-19
TWI249183B (en) 2006-02-11
DE602004009843T2 (de) 2008-08-28
EP1443364A3 (fr) 2006-02-01
US20040150805A1 (en) 2004-08-05

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Granted publication date: 20061129

Termination date: 20130130