CS240436B1 - Semiconductor memory element with two transistor controlled poles - Google Patents
Semiconductor memory element with two transistor controlled poles Download PDFInfo
- Publication number
- CS240436B1 CS240436B1 CS823144A CS314482A CS240436B1 CS 240436 B1 CS240436 B1 CS 240436B1 CS 823144 A CS823144 A CS 823144A CS 314482 A CS314482 A CS 314482A CS 240436 B1 CS240436 B1 CS 240436B1
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- transistor
- semiconductor memory
- memory element
- input
- ρθτθηηη
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 3
- 239000004020 conductor Substances 0.000 claims 3
- 239000003990 capacitor Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- OYGZAERTQAIZGU-LURJTMIESA-N (2s)-2-amino-5-methylhex-5-enoic acid Chemical compound CC(=C)CC[C@H](N)C(O)=O OYGZAERTQAIZGU-LURJTMIESA-N 0.000 description 1
- 241000283986 Lepus Species 0.000 description 1
- 240000007313 Tilia cordata Species 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Heat Sensitive Colour Forming Recording (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD81230022A DD160601A3 (de) | 1981-05-18 | 1981-05-18 | Halbleiterspeicherelement mit 2 feldeffekttransistoren |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CS240436B1 true CS240436B1 (en) | 1986-02-13 |
Family
ID=5530961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS823144A CS240436B1 (en) | 1981-05-18 | 1982-05-03 | Semiconductor memory element with two transistor controlled poles |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5828866A (de) |
| CS (1) | CS240436B1 (de) |
| DD (1) | DD160601A3 (de) |
| DE (1) | DE3212945A1 (de) |
| HU (1) | HU185711B (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6025269A (ja) * | 1983-07-21 | 1985-02-08 | Hitachi Ltd | 半導体記憶素子 |
| JPH01133357A (ja) * | 1987-11-18 | 1989-05-25 | Fujitsu Ltd | 半導体記憶装置 |
| US5471417A (en) * | 1991-01-09 | 1995-11-28 | Siemens Aktiengesellschaft | Ferroelectric memory cell arrangement |
-
1981
- 1981-05-18 DD DD81230022A patent/DD160601A3/de not_active IP Right Cessation
-
1982
- 1982-04-07 DE DE19823212945 patent/DE3212945A1/de not_active Withdrawn
- 1982-05-03 CS CS823144A patent/CS240436B1/cs unknown
- 1982-05-18 JP JP57082534A patent/JPS5828866A/ja active Pending
- 1982-05-18 HU HU821577A patent/HU185711B/hu unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DD160601A3 (de) | 1983-11-16 |
| HU185711B (en) | 1985-03-28 |
| DE3212945A1 (de) | 1982-12-09 |
| JPS5828866A (ja) | 1983-02-19 |
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