DE3781469D1 - Integrierte halbleiter-schaltung mit einer verbesserten verbindungsstruktur. - Google Patents

Integrierte halbleiter-schaltung mit einer verbesserten verbindungsstruktur.

Info

Publication number: DE3781469D1
Authority: DE; Germany
Prior art keywords: connection structure; semiconductor circuit; integrated semiconductor; improved connection; improved
Prior art date: 1986-06-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE8787305487T

Other languages

English (en)

Other versions

DE3781469T2 (de

Inventor

Masaharu Kobayashi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

NEC Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-06-19

Filing date

1987-06-19

Publication date

1992-10-08

1987-06-19 Application filed by NEC Corp filed Critical NEC Corp

1992-10-08 Publication of DE3781469D1 publication Critical patent/DE3781469D1/de

1993-01-07 Application granted granted Critical

1993-01-07 Publication of DE3781469T2 publication Critical patent/DE3781469T2/de

2007-06-20 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/427—Power or ground buses
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/43—Layouts of interconnections

DE8787305487T 1986-06-19 1987-06-19 Integrierte halbleiter-schaltung mit einer verbesserten verbindungsstruktur. Expired - Fee Related DE3781469T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP61144365A JPH0789568B2 (ja)	1986-06-19	1986-06-19	集積回路装置

Publications (2)

Publication Number	Publication Date
DE3781469D1 true DE3781469D1 (de)	1992-10-08
DE3781469T2 DE3781469T2 (de)	1993-01-07

Family

ID=15360413

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8787305487T Expired - Fee Related DE3781469T2 (de)	1986-06-19	1987-06-19	Integrierte halbleiter-schaltung mit einer verbesserten verbindungsstruktur.

Country Status (4)

Country	Link
US (1)	US4825276A (de)
EP (1)	EP0250269B1 (de)
JP (1)	JPH0789568B2 (de)
DE (1)	DE3781469T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4647749A (en) *	1985-01-17	1987-03-03	Joy Manufacturing Company	Apparatus and method for weld cladding cylindrical objects
JPS6435934A (en) *	1987-07-30	1989-02-07	Hitachi Ltd	Semiconductor integrated circuit device
KR0130776B1 (ko) *	1987-09-19	1998-04-06	미다 가쓰시게	반도체 집적회로 장치
JPH0194636A (ja) *	1987-10-06	1989-04-13	Hitachi Ltd	半導体装置
JPH01241843A (ja) *	1988-03-23	1989-09-26	Nec Corp	集積回路装置
JPH0738416B2 (ja) *	1988-04-08	1995-04-26	富士通株式会社	半導体装置
JP2894635B2 (ja) *	1990-11-30	1999-05-24	株式会社東芝	半導体記憶装置
US5182629A (en) *	1991-10-24	1993-01-26	Unisys Corporation	Integrated circuit die having a power distribution system for at least ten-thousand bipolar logic cells
JP3052519B2 (ja) *	1992-01-14	2000-06-12	日本電気株式会社	集積回路の電源配線設計方法
JP2919241B2 (ja) *	1993-09-13	1999-07-12	日本電気株式会社	電源配線
US6307162B1 (en)	1996-12-09	2001-10-23	International Business Machines Corporation	Integrated circuit wiring
US6642136B1 (en) *	2001-09-17	2003-11-04	Megic Corporation	Method of making a low fabrication cost, high performance, high reliability chip scale package
US7405149B1 (en) *	1998-12-21	2008-07-29	Megica Corporation	Post passivation method for semiconductor chip or wafer
US6936531B2 (en) *	1998-12-21	2005-08-30	Megic Corporation	Process of fabricating a chip structure
US6965165B2 (en) *	1998-12-21	2005-11-15	Mou-Shiung Lin	Top layers of metal for high performance IC's
US7247932B1 (en) *	2000-05-19	2007-07-24	Megica Corporation	Chip package with capacitor
US6815324B2 (en) *	2001-02-15	2004-11-09	Megic Corporation	Reliable metal bumps on top of I/O pads after removal of test probe marks
TWI313507B (en) *	2002-10-25	2009-08-11	Megica Corporatio	Method for assembling chips
US6613606B1 (en)	2001-09-17	2003-09-02	Magic Corporation	Structure of high performance combo chip and processing method
US7099293B2 (en) *	2002-05-01	2006-08-29	Stmicroelectronics, Inc.	Buffer-less de-skewing for symbol combination in a CDMA demodulator
US7932603B2 (en) *	2001-12-13	2011-04-26	Megica Corporation	Chip structure and process for forming the same
US8022544B2 (en)	2004-07-09	2011-09-20	Megica Corporation	Chip structure
US7465654B2 (en) *	2004-07-09	2008-12-16	Megica Corporation	Structure of gold bumps and gold conductors on one IC die and methods of manufacturing the structures
US7452803B2 (en) *	2004-08-12	2008-11-18	Megica Corporation	Method for fabricating chip structure
US7547969B2 (en)	2004-10-29	2009-06-16	Megica Corporation	Semiconductor chip with passivation layer comprising metal interconnect and contact pads
US8294279B2 (en) *	2005-01-25	2012-10-23	Megica Corporation	Chip package with dam bar restricting flow of underfill
CN1901161B (zh) *	2005-07-22	2010-10-27	米辑电子股份有限公司	连续电镀制作线路组件的方法及线路组件结构
US7397121B2 (en) *	2005-10-28	2008-07-08	Megica Corporation	Semiconductor chip with post-passivation scheme formed over passivation layer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS55120150A (en) *	1979-03-09	1980-09-16	Toshiba Corp	Semiconductor device
DE3066941D1 (en) *	1979-05-24	1984-04-19	Fujitsu Ltd	Masterslice semiconductor device and method of producing it
JPS56138939A (en) *	1980-03-31	1981-10-29	Chiyou Lsi Gijutsu Kenkyu Kumiai	Master slice type integrated circuit
JPS5835963A (ja) *	1981-08-28	1983-03-02	Fujitsu Ltd	集積回路装置
JPS594050A (ja) *	1982-06-30	1984-01-10	Fujitsu Ltd	半導体装置
JPS59158536A (ja) *	1983-02-28	1984-09-08	Nec Corp	多層配線を有する半導体装置
JPS60192359A (ja) *	1984-03-14	1985-09-30	Nec Corp	半導体メモリ装置
EP0177336B1 (de) *	1984-10-03	1992-07-22	Fujitsu Limited	Integrierte Gate-Matrixstruktur
JPS6344742A (ja) *	1986-08-12	1988-02-25	Fujitsu Ltd	半導体装置

1986
- 1986-06-19 JP JP61144365A patent/JPH0789568B2/ja not_active Expired - Lifetime
1987
- 1987-06-18 US US07/064,996 patent/US4825276A/en not_active Expired - Lifetime
- 1987-06-19 EP EP87305487A patent/EP0250269B1/de not_active Expired - Lifetime
- 1987-06-19 DE DE8787305487T patent/DE3781469T2/de not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JPH0789568B2 (ja)	1995-09-27
DE3781469T2 (de)	1993-01-07
EP0250269A3 (en)	1988-12-14
EP0250269B1 (de)	1992-09-02
JPS63138A (ja)	1988-01-05
US4825276A (en)	1989-04-25
EP0250269A2 (de)	1987-12-23

Legal Events

Date	Code	Title	Description
1993-09-30	8364	No opposition during term of opposition
1997-06-12	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
DE3750674D1 (de)	1994-11-24	Halbleiterintegrierte Schaltung mit Prüffunktion.
DE3773078D1 (de)	1991-10-24	Integrierte halbleiterschaltung mit testschaltung.
DE3688088D1 (de)	1993-04-29	Integrierte halbleiterschaltung.
DE3885112D1 (de)	1993-12-02	Gehäuse einer integrierten Schaltung.
DE3853814D1 (de)	1995-06-22	Integrierte Halbleiterschaltung.
DE3689031D1 (de)	1993-10-21	Integrierte Halbleiterschaltung mit Prüfschaltung.
DE69013254D1 (de)	1994-11-17	Halbleiter-IC-Bauelement mit verbesserter Interkonnektionsstruktur.
DE3766422D1 (de)	1991-01-10	Integrierte hybridschaltung.
DE3685071D1 (de)	1992-06-04	Integrierte halbleiterschaltung.
DE3581548D1 (de)	1991-03-07	Stromversorgungsleiter-struktur in einer integrierten halbleiterschaltung.
DE3770847D1 (de)	1991-07-25	Halbleiteranordnung mit einer verkapselungspackung.
DE3784757D1 (de)	1993-04-22	Metallisierte halbleiteranordnung mit einer zwischenschicht.
DE68921088D1 (de)	1995-03-23	Integrierte Halbleiterschaltung.
DE3782775D1 (de)	1993-01-07	Integrierte halbleiterschaltung.
DE3581077D1 (de)	1991-02-07	Ausweiskarte mit integriertem halbleiterschaltkreis.
DE3680774D1 (de)	1991-09-12	Integriertes halbleiterbauelement.
DE3685759D1 (de)	1992-07-30	Integrierte halbleiterschaltung.
DE3680265D1 (de)	1991-08-22	Halbleiterschaltungsanordnung.
DE3879813D1 (de)	1993-05-06	Integrierte halbleiterschaltung mit signallinien.
DE3884492D1 (de)	1993-11-04	Integrierte halbleiterschaltungsanordnung.
DE3785400D1 (de)	1993-05-19	Schaltkreis mit hysterese.
DE3677165D1 (de)	1991-02-28	Integrierte halbleiterschaltungsanordnung.
DE3684364D1 (de)	1992-04-23	Integrierte halbleiterschaltung.
DE3673605D1 (de)	1990-09-27	In einer integrierten halbleiterschaltung angewandtes halbleiterwiderstandselement.
DE3783507D1 (de)	1993-02-25	Zusammengesetztes halbleiterbauelement.