DE69503473D1 - Festkörper-Bildaufnahme-Vorrichtung und Herstellungsmethode - Google Patents
Festkörper-Bildaufnahme-Vorrichtung und HerstellungsmethodeInfo
- Publication number
- DE69503473D1 DE69503473D1 DE69503473T DE69503473T DE69503473D1 DE 69503473 D1 DE69503473 D1 DE 69503473D1 DE 69503473 T DE69503473 T DE 69503473T DE 69503473 T DE69503473 T DE 69503473T DE 69503473 D1 DE69503473 D1 DE 69503473D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- imaging device
- solid state
- state imaging
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/156—CCD or CID colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12286695A JP3405620B2 (ja) | 1995-05-22 | 1995-05-22 | 固体撮像装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69503473D1 true DE69503473D1 (de) | 1998-08-20 |
| DE69503473T2 DE69503473T2 (de) | 1999-02-11 |
Family
ID=14846576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69503473T Expired - Lifetime DE69503473T2 (de) | 1995-05-22 | 1995-09-08 | Festkörper-Bildaufnahme-Vorrichtung und Herstellungsmethode |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US5796154A (de) |
| EP (1) | EP0744778B1 (de) |
| JP (1) | JP3405620B2 (de) |
| KR (1) | KR100213422B1 (de) |
| CN (1) | CN1050938C (de) |
| DE (1) | DE69503473T2 (de) |
| TW (1) | TW308652B (de) |
Families Citing this family (121)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3272941B2 (ja) * | 1996-04-01 | 2002-04-08 | 株式会社東芝 | 固体撮像素子およびその製造方法 |
| KR100244295B1 (ko) * | 1997-03-13 | 2000-02-01 | 김영환 | 고체 촬상 소자 및 그 제조방법 |
| JP3695082B2 (ja) * | 1997-07-11 | 2005-09-14 | ソニー株式会社 | 固体撮像素子、固体撮像素子の製造方法および撮像装置 |
| US6057586A (en) * | 1997-09-26 | 2000-05-02 | Intel Corporation | Method and apparatus for employing a light shield to modulate pixel color responsivity |
| JP3620237B2 (ja) * | 1997-09-29 | 2005-02-16 | ソニー株式会社 | 固体撮像素子 |
| JP3571909B2 (ja) | 1998-03-19 | 2004-09-29 | キヤノン株式会社 | 固体撮像装置及びその製造方法 |
| JPH11284158A (ja) * | 1998-03-27 | 1999-10-15 | Sony Corp | 固体撮像素子と固体撮像素子の製造方法 |
| JP4232213B2 (ja) * | 1998-04-15 | 2009-03-04 | ソニー株式会社 | 固体撮像素子 |
| TW370727B (en) * | 1998-06-04 | 1999-09-21 | United Microelectronics Corp | Method for removing color filter films of CMOS sensor |
| KR100359768B1 (ko) * | 1999-03-18 | 2002-11-07 | 주식회사 하이닉스반도체 | 고체 촬상 소자 및 그 제조방법 |
| TW409397B (en) * | 1999-05-26 | 2000-10-21 | United Microelectronics Corp | The structure of semiconductor image sensor and the manufacture method of the same |
| US6362513B2 (en) * | 1999-07-08 | 2002-03-26 | Intel Corporation | Conformal color filter layer above microlens structures in an image sensor die |
| US6307243B1 (en) * | 1999-07-19 | 2001-10-23 | Micron Technology, Inc. | Microlens array with improved fill factor |
| US6171885B1 (en) | 1999-10-12 | 2001-01-09 | Taiwan Semiconductor Manufacturing Company | High efficiency color filter process for semiconductor array imaging devices |
| JP4482982B2 (ja) * | 1999-11-08 | 2010-06-16 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
| US6221687B1 (en) | 1999-12-23 | 2001-04-24 | Tower Semiconductor Ltd. | Color image sensor with embedded microlens array |
| TW550377B (en) * | 2000-02-23 | 2003-09-01 | Zeiss Stiftung | Apparatus for wave-front detection |
| JP2003526925A (ja) | 2000-03-09 | 2003-09-09 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | サブミクロン技術による固体イメージング・センサおよび固体イメージング・センサの製造および使用方法 |
| DE10022660A1 (de) * | 2000-04-28 | 2001-11-08 | Infineon Technologies Ag | Optischer Sensor |
| US6570324B1 (en) | 2000-07-19 | 2003-05-27 | Eastman Kodak Company | Image display device with array of lens-lets |
| JP2002064193A (ja) * | 2000-08-22 | 2002-02-28 | Sony Corp | 固体撮像装置および製造方法 |
| KR100477784B1 (ko) * | 2000-08-31 | 2005-03-22 | 매그나칩 반도체 유한회사 | 트렌치 내부의 공기로 이루어지는 집광층을 구비하는이미지 센서 및 그 제조 방법 |
| US8103877B2 (en) * | 2000-12-21 | 2012-01-24 | Digimarc Corporation | Content identification and electronic tickets, coupons and credits |
| JP2002246578A (ja) * | 2001-02-20 | 2002-08-30 | Matsushita Electric Ind Co Ltd | 固体撮像装置の製造方法 |
| JP2002314058A (ja) * | 2001-04-17 | 2002-10-25 | Sony Corp | 固体撮像素子およびその製造方法 |
| US6482669B1 (en) * | 2001-05-30 | 2002-11-19 | Taiwan Semiconductor Manufacturing Company | Colors only process to reduce package yield loss |
| US7756041B2 (en) * | 2001-06-14 | 2010-07-13 | Meshnetworks, Inc. | Embedded routing algorithms under the internet protocol routing layer of a software architecture protocol stack in a mobile Ad-Hoc network |
| US6590239B2 (en) * | 2001-07-30 | 2003-07-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Color filter image array optoelectronic microelectronic fabrication with a planarizing layer formed upon a concave surfaced color filter region |
| KR100399971B1 (ko) * | 2001-11-06 | 2003-09-29 | 주식회사 하이닉스반도체 | 이미지 센서 및 그 제조방법 |
| JP2003218332A (ja) * | 2002-01-22 | 2003-07-31 | Sony Corp | 固体撮像素子 |
| JP2003229553A (ja) * | 2002-02-05 | 2003-08-15 | Sharp Corp | 半導体装置及びその製造方法 |
| JP2003264284A (ja) * | 2002-03-08 | 2003-09-19 | Sanyo Electric Co Ltd | 固体撮像素子及びその製造方法 |
| KR20040000877A (ko) * | 2002-06-26 | 2004-01-07 | 동부전자 주식회사 | 오목형 및 볼록형 마이크로렌즈를 갖는 씨모스 이미지센서및 그 제조 방법 |
| KR100872289B1 (ko) * | 2002-07-19 | 2008-12-05 | 매그나칩 반도체 유한회사 | 수광특성을 향상시킨 시모스 이미지센서 및 그 제조방법 |
| KR20040031130A (ko) * | 2002-10-04 | 2004-04-13 | 동부전자 주식회사 | 이미지 센서 제조 방법 |
| US6699729B1 (en) * | 2002-10-25 | 2004-03-02 | Omnivision International Holding Ltd | Method of forming planar color filters in an image sensor |
| JP2004221487A (ja) * | 2003-01-17 | 2004-08-05 | Sharp Corp | 半導体装置の製造方法及び半導体装置 |
| JP2004319784A (ja) * | 2003-04-16 | 2004-11-11 | Sanyo Electric Co Ltd | 固体撮像素子及びその製造方法 |
| JP4383959B2 (ja) * | 2003-05-28 | 2009-12-16 | キヤノン株式会社 | 光電変換装置およびその製造方法 |
| JP2004363356A (ja) * | 2003-06-05 | 2004-12-24 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
| JP3729353B2 (ja) * | 2003-06-18 | 2005-12-21 | 松下電器産業株式会社 | 固体撮像装置およびその製造方法 |
| JP2005079344A (ja) * | 2003-08-29 | 2005-03-24 | Matsushita Electric Ind Co Ltd | 固体撮像装置及びその製造方法 |
| US7115853B2 (en) * | 2003-09-23 | 2006-10-03 | Micron Technology, Inc. | Micro-lens configuration for small lens focusing in digital imaging devices |
| KR100549589B1 (ko) * | 2003-09-29 | 2006-02-08 | 매그나칩 반도체 유한회사 | 이미지센서 및 그 제조 방법 |
| US7081998B2 (en) * | 2003-10-23 | 2006-07-25 | Sanyo Electric Co., Ltd. | Solid-state imaging apparatus |
| US20050109916A1 (en) * | 2003-11-21 | 2005-05-26 | Eastman Kodak Company | Large pixel micro-lens |
| JP4181487B2 (ja) * | 2003-11-28 | 2008-11-12 | 松下電器産業株式会社 | 固体撮像装置とその製造方法 |
| US20050116271A1 (en) * | 2003-12-02 | 2005-06-02 | Yoshiaki Kato | Solid-state imaging device and manufacturing method thereof |
| JP4208072B2 (ja) | 2003-12-05 | 2009-01-14 | シャープ株式会社 | 半導体素子およびその製造方法 |
| US6969899B2 (en) * | 2003-12-08 | 2005-11-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor with light guides |
| EP1557886A3 (de) * | 2004-01-26 | 2006-06-07 | Matsushita Electric Industrial Co., Ltd. | Festkörperbildaufnahmevorrichtung und Kamera |
| US7372497B2 (en) * | 2004-04-28 | 2008-05-13 | Taiwan Semiconductor Manufacturing Company | Effective method to improve sub-micron color filter sensitivity |
| KR100578644B1 (ko) * | 2004-05-06 | 2006-05-11 | 매그나칩 반도체 유한회사 | 프리즘을 구비한 시모스 이미지센서 및 그 제조방법 |
| KR100689885B1 (ko) * | 2004-05-17 | 2007-03-09 | 삼성전자주식회사 | 광감도 및 주변광량비 개선을 위한 cmos 이미지 센서및 그 제조방법 |
| JP4830306B2 (ja) * | 2004-06-23 | 2011-12-07 | 凸版印刷株式会社 | 固体撮像素子の製造方法 |
| CN100517739C (zh) * | 2004-06-23 | 2009-07-22 | 凸版印刷株式会社 | 固态成像装置及其制造方法 |
| KR100688497B1 (ko) * | 2004-06-28 | 2007-03-02 | 삼성전자주식회사 | 이미지 센서 및 그 제조방법 |
| EP1626442B1 (de) * | 2004-08-13 | 2011-01-12 | St Microelectronics S.A. | Bildsensor |
| KR100640531B1 (ko) * | 2004-08-20 | 2006-10-30 | 동부일렉트로닉스 주식회사 | 자기 정렬 이미지 센서 제조방법 |
| US7294818B2 (en) * | 2004-08-24 | 2007-11-13 | Canon Kabushiki Kaisha | Solid state image pickup device and image pickup system comprising it |
| KR100642764B1 (ko) * | 2004-09-08 | 2006-11-10 | 삼성전자주식회사 | 이미지 소자 및 그 제조 방법 |
| US20060057765A1 (en) | 2004-09-13 | 2006-03-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor including multiple lenses and method of manufacture thereof |
| JP4822683B2 (ja) | 2004-10-08 | 2011-11-24 | パナソニック株式会社 | 固体撮像装置およびその製造方法 |
| US20060099800A1 (en) * | 2004-11-09 | 2006-05-11 | Chintamani Palsule | Method for fabricating low leakage interconnect layers in integrated circuits |
| US7208783B2 (en) * | 2004-11-09 | 2007-04-24 | Micron Technology, Inc. | Optical enhancement of integrated circuit photodetectors |
| KR100745595B1 (ko) * | 2004-11-29 | 2007-08-02 | 삼성전자주식회사 | 이미지 센서의 마이크로 렌즈 및 그 형성 방법 |
| KR100595601B1 (ko) * | 2004-12-14 | 2006-07-05 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 제조방법 |
| US7420610B2 (en) * | 2004-12-15 | 2008-09-02 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging element, solid-state imaging device, and method for fabricating the same |
| JP4510613B2 (ja) * | 2004-12-28 | 2010-07-28 | パナソニック株式会社 | 固体撮像装置の製造方法 |
| US7254089B2 (en) * | 2004-12-29 | 2007-08-07 | Infineon Technologies Ag | Memory with selectable single cell or twin cell configuration |
| JP4448087B2 (ja) * | 2004-12-30 | 2010-04-07 | 東部エレクトロニクス株式会社 | Cmosイメージセンサーとその製造方法 |
| US7297916B1 (en) * | 2005-02-22 | 2007-11-20 | Magnachip Semiconductor, Ltd. | Optically improved CMOS imaging sensor structure to lower imaging lens requirements |
| JP4761505B2 (ja) * | 2005-03-01 | 2011-08-31 | キヤノン株式会社 | 撮像装置、ならびに撮像システム |
| US7791158B2 (en) | 2005-04-13 | 2010-09-07 | Samsung Electronics Co., Ltd. | CMOS image sensor including an interlayer insulating layer and method of manufacturing the same |
| JP2006319037A (ja) * | 2005-05-11 | 2006-11-24 | Canon Inc | 固体撮像素子 |
| US7196388B2 (en) * | 2005-05-27 | 2007-03-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Microlens designs for CMOS image sensors |
| US7968888B2 (en) * | 2005-06-08 | 2011-06-28 | Panasonic Corporation | Solid-state image sensor and manufacturing method thereof |
| US7553689B2 (en) * | 2005-07-13 | 2009-06-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with micro-lens and method of making the same |
| JP4469781B2 (ja) * | 2005-07-20 | 2010-05-26 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
| WO2007015420A1 (ja) | 2005-08-03 | 2007-02-08 | Matsushita Electric Industrial Co., Ltd. | 固体撮像装置 |
| KR100790225B1 (ko) * | 2005-12-26 | 2008-01-02 | 매그나칩 반도체 유한회사 | 이미지 센서 및 그 제조 방법 |
| US7629661B2 (en) * | 2006-02-10 | 2009-12-08 | Noble Peak Vision Corp. | Semiconductor devices with photoresponsive components and metal silicide light blocking structures |
| JP4215071B2 (ja) * | 2006-04-28 | 2009-01-28 | 三菱電機株式会社 | イメージセンサ及びその製造方法 |
| JP4315457B2 (ja) * | 2006-08-31 | 2009-08-19 | キヤノン株式会社 | 光電変換装置及び撮像システム |
| US20090086491A1 (en) | 2007-09-28 | 2009-04-02 | Ruud Lighting, Inc. | Aerodynamic LED Floodlight Fixture |
| US9222632B2 (en) | 2013-01-31 | 2015-12-29 | Cree, Inc. | LED lighting fixture |
| US9028087B2 (en) | 2006-09-30 | 2015-05-12 | Cree, Inc. | LED light fixture |
| US7686469B2 (en) | 2006-09-30 | 2010-03-30 | Ruud Lighting, Inc. | LED lighting fixture |
| US9212812B2 (en) | 2013-02-11 | 2015-12-15 | Cree, Inc. | LED light fixture with integrated light shielding |
| US7879631B2 (en) * | 2006-10-24 | 2011-02-01 | Hong Jim T | Systems and methods for on-die light sensing with low leakage |
| US7732844B2 (en) | 2006-11-03 | 2010-06-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Crosstalk improvement through P on N structure for image sensor |
| JP5037922B2 (ja) * | 2006-12-08 | 2012-10-03 | パナソニック株式会社 | 固体撮像装置 |
| KR100937654B1 (ko) * | 2006-12-12 | 2010-01-19 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그 제조방법 |
| US8092042B2 (en) * | 2007-05-03 | 2012-01-10 | Ruud Lighting, Inc. | Shield member in LED apparatus |
| KR100837566B1 (ko) * | 2007-05-10 | 2008-06-11 | 동부일렉트로닉스 주식회사 | 마스크의 설계방법과 반도체 소자 및 그 제조방법 |
| JP2009016574A (ja) * | 2007-07-04 | 2009-01-22 | Panasonic Corp | 固体撮像装置およびその製造方法 |
| KR100882732B1 (ko) * | 2007-10-22 | 2009-02-06 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
| US7637630B2 (en) * | 2008-04-22 | 2009-12-29 | Ruud Lighting, Inc. | Integrated shield-gasket member in LED apparatus |
| US8003425B2 (en) * | 2008-05-14 | 2011-08-23 | International Business Machines Corporation | Methods for forming anti-reflection structures for CMOS image sensors |
| US7759755B2 (en) | 2008-05-14 | 2010-07-20 | International Business Machines Corporation | Anti-reflection structures for CMOS image sensors |
| JP5235565B2 (ja) * | 2008-08-27 | 2013-07-10 | キヤノン株式会社 | 撮像センサ及び撮像装置 |
| US20100301437A1 (en) * | 2009-06-01 | 2010-12-02 | Kla-Tencor Corporation | Anti-Reflective Coating For Sensors Suitable For High Throughput Inspection Systems |
| JP2010283145A (ja) * | 2009-06-04 | 2010-12-16 | Sony Corp | 固体撮像素子及びその製造方法、電子機器 |
| JP2011109033A (ja) * | 2009-11-20 | 2011-06-02 | Sharp Corp | 層内レンズおよびその製造方法、カラーフィルタおよびその製造方法、固体撮像素子およびその製造方法、並びに電子情報機器 |
| USD631075S1 (en) * | 2009-12-30 | 2011-01-18 | Foxconn Technology Co., Ltd. | LED lens |
| CN102130138B (zh) | 2010-01-12 | 2013-01-02 | 中芯国际集成电路制造(上海)有限公司 | 图像传感器及其形成方法 |
| JP5833411B2 (ja) * | 2011-11-11 | 2015-12-16 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法ならびに液晶表示装置 |
| US9435519B2 (en) | 2013-01-31 | 2016-09-06 | Cree, Inc. | Light-fixture support assembly |
| JP2014187160A (ja) * | 2013-03-22 | 2014-10-02 | Toshiba Corp | 固体撮像装置および携帯情報端末 |
| US9347890B2 (en) | 2013-12-19 | 2016-05-24 | Kla-Tencor Corporation | Low-noise sensor and an inspection system using a low-noise sensor |
| US9748294B2 (en) | 2014-01-10 | 2017-08-29 | Hamamatsu Photonics K.K. | Anti-reflection layer for back-illuminated sensor |
| US9410901B2 (en) | 2014-03-17 | 2016-08-09 | Kla-Tencor Corporation | Image sensor, an inspection system and a method of inspecting an article |
| US9860466B2 (en) | 2015-05-14 | 2018-01-02 | Kla-Tencor Corporation | Sensor with electrically controllable aperture for inspection and metrology systems |
| US10313622B2 (en) | 2016-04-06 | 2019-06-04 | Kla-Tencor Corporation | Dual-column-parallel CCD sensor and inspection systems using a sensor |
| US10778925B2 (en) | 2016-04-06 | 2020-09-15 | Kla-Tencor Corporation | Multiple column per channel CCD sensor architecture for inspection and metrology |
| CN109196848B (zh) * | 2016-05-19 | 2020-03-20 | 三菱电机株式会社 | 固态摄像装置及图像传感器 |
| US11323608B2 (en) * | 2018-06-25 | 2022-05-03 | Omnivision Technologies, Inc. | Image sensors with phase detection auto-focus pixels |
| US11114491B2 (en) | 2018-12-12 | 2021-09-07 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
| TWI803719B (zh) * | 2019-10-10 | 2023-06-01 | 美商豪威科技股份有限公司 | 具相位偵測自動聚焦像素之影像感測器像素陣列及用於製造其之方法 |
| CN112885859A (zh) * | 2021-03-31 | 2021-06-01 | 华虹半导体(无锡)有限公司 | Cmos图像传感器 |
| CN121038388B (zh) * | 2025-10-28 | 2026-03-20 | 合肥晶合集成电路股份有限公司 | 背照式图像传感器及其制备方法、电子设备 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2638885B2 (ja) * | 1988-02-22 | 1997-08-06 | ソニー株式会社 | 固体撮像装置 |
| JPH03107101A (ja) * | 1989-09-20 | 1991-05-07 | Dainippon Printing Co Ltd | 集光性フィルター及びその製造方法 |
| US5239412A (en) * | 1990-02-05 | 1993-08-24 | Sharp Kabushiki Kaisha | Solid image pickup device having microlenses |
| JPH0485960A (ja) * | 1990-07-30 | 1992-03-18 | Toshiba Corp | 固体撮像装置及びその製造方法 |
| JPH04115678A (ja) * | 1990-08-31 | 1992-04-16 | Sanyo Electric Co Ltd | 固体撮像素子及びその駆動方法 |
| KR920013734A (ko) * | 1990-12-31 | 1992-07-29 | 김광호 | 칼라필터의 제조방법 |
| JP3200856B2 (ja) * | 1991-02-12 | 2001-08-20 | ソニー株式会社 | 固体撮像装置 |
| JPH04334056A (ja) * | 1991-05-09 | 1992-11-20 | Toshiba Corp | 固体撮像装置の製造方法 |
| JPH04348565A (ja) * | 1991-05-27 | 1992-12-03 | Nec Corp | 固体撮像素子 |
| JPH05134111A (ja) * | 1991-11-15 | 1993-05-28 | Sharp Corp | 固体撮像装置 |
| JPH05167054A (ja) * | 1991-12-19 | 1993-07-02 | Toshiba Corp | 固体撮像装置の製造方法 |
| DE69320113T2 (de) * | 1992-05-22 | 1999-03-11 | Matsushita Electronics Corp., Kadoma, Osaka | Festkörper-Bildsensor und Verfahren zu seiner Herstellung |
| JPH05335531A (ja) * | 1992-05-27 | 1993-12-17 | Sharp Corp | 固体撮像装置 |
| JP2833941B2 (ja) * | 1992-10-09 | 1998-12-09 | 三菱電機株式会社 | 固体撮像装置とその製造方法 |
| JPH06232379A (ja) * | 1993-02-01 | 1994-08-19 | Sharp Corp | 固体撮像素子 |
| WO1995008192A1 (en) * | 1993-09-17 | 1995-03-23 | Polaroid Corporation | Forming microlenses on solid state imager |
| JP2950714B2 (ja) * | 1993-09-28 | 1999-09-20 | シャープ株式会社 | 固体撮像装置およびその製造方法 |
| KR0147401B1 (ko) * | 1994-02-23 | 1998-08-01 | 구본준 | 고체촬상소자 및 그 제조방법 |
| US5766980A (en) * | 1994-03-25 | 1998-06-16 | Matsushita Electronics Corporation | Method of manufacturing a solid state imaging device |
| KR0151258B1 (ko) * | 1995-06-22 | 1998-10-01 | 문정환 | 씨씨디 영상센서 및 그 제조방법 |
| KR0148734B1 (ko) * | 1995-06-22 | 1998-08-01 | 문정환 | 시시디 촬상소자 제조방법 |
| US5693967A (en) * | 1995-08-10 | 1997-12-02 | Lg Semicon Co., Ltd. | Charge coupled device with microlens |
-
1995
- 1995-05-22 JP JP12286695A patent/JP3405620B2/ja not_active Expired - Fee Related
- 1995-08-31 US US08/522,131 patent/US5796154A/en not_active Expired - Lifetime
- 1995-09-05 TW TW084109260A patent/TW308652B/zh not_active IP Right Cessation
- 1995-09-08 DE DE69503473T patent/DE69503473T2/de not_active Expired - Lifetime
- 1995-09-08 EP EP95114081A patent/EP0744778B1/de not_active Expired - Lifetime
- 1995-11-29 KR KR1019950044593A patent/KR100213422B1/ko not_active Expired - Fee Related
- 1995-12-20 CN CN95121194A patent/CN1050938C/zh not_active Expired - Fee Related
-
1996
- 1996-12-12 US US08/764,449 patent/US6030852A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69503473T2 (de) | 1999-02-11 |
| EP0744778A1 (de) | 1996-11-27 |
| JP3405620B2 (ja) | 2003-05-12 |
| KR100213422B1 (ko) | 1999-08-02 |
| TW308652B (de) | 1997-06-21 |
| CN1050938C (zh) | 2000-03-29 |
| EP0744778B1 (de) | 1998-07-15 |
| CN1134040A (zh) | 1996-10-23 |
| JPH08316448A (ja) | 1996-11-29 |
| US5796154A (en) | 1998-08-18 |
| KR960043255A (ko) | 1996-12-23 |
| US6030852A (en) | 2000-02-29 |
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