DK0475259T3 - Fremgangsmåde til fremstilling af halvlederelementer - Google Patents

Fremgangsmåde til fremstilling af halvlederelementer

Info

Publication number
DK0475259T3
DK0475259T3 DK91114907.8T DK91114907T DK0475259T3 DK 0475259 T3 DK0475259 T3 DK 0475259T3 DK 91114907 T DK91114907 T DK 91114907T DK 0475259 T3 DK0475259 T3 DK 0475259T3
Authority
DK
Denmark
Prior art keywords
semiconductor elements
manufacturing semiconductor
manufacturing
elements
semiconductor
Prior art date
Application number
DK91114907.8T
Other languages
Danish (da)
English (en)
Inventor
Masanori Nishiguchi
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Application granted granted Critical
Publication of DK0475259T3 publication Critical patent/DK0475259T3/da

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
DK91114907.8T 1990-09-05 1991-09-04 Fremgangsmåde til fremstilling af halvlederelementer DK0475259T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2235152A JP2610703B2 (ja) 1990-09-05 1990-09-05 半導体素子の製造方法

Publications (1)

Publication Number Publication Date
DK0475259T3 true DK0475259T3 (da) 1996-01-15

Family

ID=16981823

Family Applications (1)

Application Number Title Priority Date Filing Date
DK91114907.8T DK0475259T3 (da) 1990-09-05 1991-09-04 Fremgangsmåde til fremstilling af halvlederelementer

Country Status (8)

Country Link
US (1) US5122481A (de)
EP (1) EP0475259B1 (de)
JP (1) JP2610703B2 (de)
KR (1) KR940002915B1 (de)
AU (1) AU649063B2 (de)
CA (1) CA2050675A1 (de)
DE (1) DE69112545T2 (de)
DK (1) DK0475259T3 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279704A (en) * 1991-04-23 1994-01-18 Honda Giken Kogyo Kabushiki Kaisha Method of fabricating semiconductor device
US5245794A (en) * 1992-04-09 1993-09-21 Advanced Micro Devices, Inc. Audio end point detector for chemical-mechanical polishing and method therefor
US5268065A (en) * 1992-12-21 1993-12-07 Motorola, Inc. Method for thinning a semiconductor wafer
US5480842A (en) * 1994-04-11 1996-01-02 At&T Corp. Method for fabricating thin, strong, and flexible die for smart cards
JPH0817777A (ja) * 1994-07-01 1996-01-19 Mitsubishi Materials Shilicon Corp シリコンウェーハの洗浄方法
US5648684A (en) * 1995-07-26 1997-07-15 International Business Machines Corporation Endcap chip with conductive, monolithic L-connect for multichip stack
US5691248A (en) * 1995-07-26 1997-11-25 International Business Machines Corporation Methods for precise definition of integrated circuit chip edges
US6059637A (en) * 1997-12-15 2000-05-09 Lsi Logic Corporation Process for abrasive removal of copper from the back surface of a silicon substrate
EP1022778A1 (de) * 1999-01-22 2000-07-26 Kabushiki Kaisha Toshiba Vefahren zum Zerteilen eines Wafers und Verfahren zur Herstellung eines Halbleiterbauelements
DE19921230B4 (de) * 1999-05-07 2009-04-02 Giesecke & Devrient Gmbh Verfahren zum Handhaben von gedünnten Chips zum Einbringen in Chipkarten
US6560871B1 (en) * 2000-03-21 2003-05-13 Hewlett-Packard Development Company, L.P. Semiconductor substrate having increased facture strength and method of forming the same
US6520844B2 (en) * 2000-08-04 2003-02-18 Sharp Kabushiki Kaisha Method of thinning semiconductor wafer capable of preventing its front from being contaminated and back grinding device for semiconductor wafers
CN101335235B (zh) 2002-03-12 2010-10-13 浜松光子学株式会社 基板的分割方法
JP4544876B2 (ja) 2003-02-25 2010-09-15 三洋電機株式会社 半導体装置の製造方法
JP2005005380A (ja) * 2003-06-10 2005-01-06 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2005026314A (ja) * 2003-06-30 2005-01-27 Sanyo Electric Co Ltd 固体撮像素子の製造方法
JP2005303218A (ja) * 2004-04-16 2005-10-27 Renesas Technology Corp 半導体装置およびその製造方法
JP4872208B2 (ja) * 2004-11-18 2012-02-08 富士電機株式会社 半導体装置の製造方法
JP5149020B2 (ja) * 2008-01-23 2013-02-20 株式会社ディスコ ウエーハの研削方法
GB2459301B (en) * 2008-04-18 2011-09-14 Xsil Technology Ltd A method of dicing wafers to give high die strength
KR20230108142A (ko) * 2022-01-10 2023-07-18 도레이첨단소재 주식회사 고강도 메타 아라미드 섬유 및 그의 제조방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU393073A1 (ru) * 1970-12-04 1973-08-10 Способ повышения долговечности алмазных, например выглаживающих инструментов
AU527845B2 (en) * 1978-01-19 1983-03-24 E. Sachs & Co. Ltd Fascia gutter
US4411107A (en) * 1980-02-01 1983-10-25 Disco Co., Ltd. Grinding wheel for flat plates
FR2505713A1 (fr) * 1981-05-18 1982-11-19 Procedes Equip Sciences Ind Sa Porte-plaquette pour machines a polir des plaquettes minces, fragiles et deformables
DE3148957C2 (de) * 1981-12-10 1987-01-02 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum Herstellen rückseitig oberflächengestörter Halbleiterscheiben
JPS58184727A (ja) * 1982-04-23 1983-10-28 Disco Abrasive Sys Ltd シリコンウェ−ハの面を研削する方法
JPS62243332A (ja) * 1986-04-15 1987-10-23 Toshiba Corp 半導体ウエハの加工方法
US5035087A (en) * 1986-12-08 1991-07-30 Sumitomo Electric Industries, Ltd. Surface grinding machine
JPS6437025A (en) * 1987-08-03 1989-02-07 Sumitomo Electric Industries Manufacture of semiconductor device

Also Published As

Publication number Publication date
AU649063B2 (en) 1994-05-12
AU8353891A (en) 1992-03-12
EP0475259A3 (en) 1992-12-16
JP2610703B2 (ja) 1997-05-14
EP0475259A2 (de) 1992-03-18
DE69112545D1 (de) 1995-10-05
DE69112545T2 (de) 1996-05-02
US5122481A (en) 1992-06-16
KR940002915B1 (ko) 1994-04-07
KR920007104A (ko) 1992-04-28
CA2050675A1 (en) 1992-03-06
EP0475259B1 (de) 1995-08-30
JPH04115528A (ja) 1992-04-16

Similar Documents

Publication Publication Date Title
DK0475259T3 (da) Fremgangsmåde til fremstilling af halvlederelementer
DE69132627D1 (de) Halbleiter-bauteil
DE69131762D1 (de) Herstellungsverfahren für Halbleitereinrichtungen
DK292189A (da) Fremgangsmaade til fremstilling af boerstevarer
DE69104429D1 (de) Optisches Halbleiterbauelement.
DE69208937D1 (de) Halbleiter-Herstellungseinrichtung
DK55191A (da) Fremgangsmaade til fremstilling af rekombinerede genprodukter
DK674288D0 (da) Fremgangsmaade til fremstilling af mikrokapsler
DK180791D0 (da) Fremgangsmaade til fremstilling af reflekterende genstand
DK170990A (da) Fremgangsmaade til fremstilling af celleplast
DK0458150T3 (da) Fremgangsmåde til fremstilling af formede genstande
DK382084A (da) Fremgangsmaade til fremstilling af penemer
DE69131241D1 (de) Herstellungsverfahren für Halbleiteranordnungen
FI931833A7 (fi) Menetelmä betonielementtien valmistamiseksi
DK0554846T3 (da) Fremgangsmåde til fremstilling af lysmodtagende halvlederelementer
DK0509342T3 (da) Fremgangsmåde til fremstilling af kileformede strukturer
DE69105530D1 (de) Halbleiterscheibe.
DE69125498D1 (de) Halbleiterverrichtungsherstellungsverfahren
DK0527616T3 (da) Fremgangsmåde til fremstilling af matricer
DK0465373T3 (da) Fremgangsmåde til fremstilling af kappa-carragenaner
DE69111513D1 (de) Halbleiterherstellungseinrichtung.
DK40891A (da) Fremgangsmaade til fremstilling af cephalosporiner
NO914563D0 (no) Fremgangsmaate for fremstilling av 3h-puriner
DK132084A (da) Fremgangsmaade til fremstilling af mikrokapsler
SK894U (sk) Substrát pre rastliny