DK0846334T3 - Fremgangsmåde til tørring af substrater - Google Patents

Fremgangsmåde til tørring af substrater

Info

Publication number
DK0846334T3
DK0846334T3 DK96929234T DK96929234T DK0846334T3 DK 0846334 T3 DK0846334 T3 DK 0846334T3 DK 96929234 T DK96929234 T DK 96929234T DK 96929234 T DK96929234 T DK 96929234T DK 0846334 T3 DK0846334 T3 DK 0846334T3
Authority
DK
Denmark
Prior art keywords
substrate
bath
liquid
liquid bath
separating
Prior art date
Application number
DK96929234T
Other languages
Danish (da)
English (en)
Inventor
Wilhelm Schellenberger
Dieter Herrmannsdoerfer
Original Assignee
Ictop Entwicklungs Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ictop Entwicklungs Gmbh filed Critical Ictop Entwicklungs Gmbh
Application granted granted Critical
Publication of DK0846334T3 publication Critical patent/DK0846334T3/da

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Silicon Compounds (AREA)
  • Inorganic Insulating Materials (AREA)
  • Detergent Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
DK96929234T 1995-08-23 1996-08-09 Fremgangsmåde til tørring af substrater DK0846334T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19531031A DE19531031C2 (de) 1995-08-23 1995-08-23 Verfahren zum Trocknen von Silizium
PCT/EP1996/003541 WO1997008742A1 (en) 1995-08-23 1996-08-09 Procedure for drying silicon

Publications (1)

Publication Number Publication Date
DK0846334T3 true DK0846334T3 (da) 2003-02-10

Family

ID=7770207

Family Applications (2)

Application Number Title Priority Date Filing Date
DK01130669T DK1199740T3 (da) 1995-08-23 1996-08-09 Fremgangsmpde til törring af silicium
DK96929234T DK0846334T3 (da) 1995-08-23 1996-08-09 Fremgangsmåde til tørring af substrater

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DK01130669T DK1199740T3 (da) 1995-08-23 1996-08-09 Fremgangsmpde til törring af silicium

Country Status (24)

Country Link
EP (2) EP1199740B1 (de)
JP (1) JP3857314B2 (de)
KR (1) KR19990037642A (de)
CN (1) CN1091542C (de)
AT (2) ATE309613T1 (de)
AU (1) AU697397B2 (de)
CA (1) CA2228168A1 (de)
CZ (1) CZ291335B6 (de)
DE (3) DE19531031C2 (de)
DK (2) DK1199740T3 (de)
ES (2) ES2250292T3 (de)
HK (1) HK1043661B (de)
HU (1) HUP9802482A3 (de)
IL (1) IL123042A (de)
MX (1) MX9801464A (de)
NO (1) NO980734L (de)
PL (1) PL183355B1 (de)
PT (1) PT846334E (de)
RU (1) RU2141700C1 (de)
SI (1) SI1199740T1 (de)
SK (1) SK284835B6 (de)
TW (1) TW427952B (de)
UA (1) UA51663C2 (de)
WO (1) WO1997008742A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19613620C2 (de) 1996-04-04 1998-04-16 Steag Micro Tech Gmbh Verfahren und Vorrichtung zum Trocknen von Substraten
DE19800584C2 (de) * 1998-01-09 2002-06-20 Steag Micro Tech Gmbh Verfahren und Vorrichtung zum Trocknen von Substraten
DE19833257C1 (de) * 1998-07-23 1999-09-30 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
DE19927457C2 (de) * 1999-06-16 2002-06-13 Wacker Siltronic Halbleitermat Verwendung eines bekannten Verfahrens als Vorbehandlung zur Bestimmung der Diffusionslängen von Minoritätsträgern in einer Halbleiterscheibe
DE10036691A1 (de) * 2000-07-27 2002-02-14 Wacker Siltronic Halbleitermat Verfahren zur chemischen Behandlung von Halbleiterscheiben
DE10064081C2 (de) * 2000-12-21 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
DE10360269A1 (de) * 2003-12-17 2005-07-28 Friedrich-Schiller-Universität Jena Verfahren zur schnellen Mischung von kleinvolumigen Flüssigkeiten und Kit zu dessen Anwendung
WO2006066115A2 (en) 2004-12-17 2006-06-22 The Procter & Gamble Company Process for extracting liquid from a fabric
KR100897581B1 (ko) 2007-11-14 2009-05-14 주식회사 실트론 웨이퍼 건조 방법
RU2486287C2 (ru) * 2011-04-29 2013-06-27 Антон Викторович Мантузов Способ очистки поверхности полупроводниковых пластин и регенерации травильных растворов
CN114993028B (zh) * 2022-06-17 2023-05-30 高景太阳能股份有限公司 一种硅片烘干处理方法及系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2722783A1 (de) * 1977-05-20 1978-11-30 Wacker Chemitronic Verfahren zum reinigen von silicium
US4169807A (en) * 1978-03-20 1979-10-02 Rca Corporation Novel solvent drying agent
DE3317286A1 (de) * 1983-05-11 1984-11-22 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur reinigung von silicium durch saeureeinwirkung
FR2591324B1 (fr) * 1985-12-10 1989-02-17 Recif Sa Appareil pour le sechage unitaire des plaquettes de silicium par centrifugation
JPS62198127A (ja) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd 半導体ウエハの洗浄方法
US4722752A (en) * 1986-06-16 1988-02-02 Robert F. Orr Apparatus and method for rinsing and drying silicon wafers
US4902350A (en) * 1987-09-09 1990-02-20 Robert F. Orr Method for rinsing, cleaning and drying silicon wafers
NL8900480A (nl) * 1989-02-27 1990-09-17 Philips Nv Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.
JPH0366126A (ja) * 1989-08-04 1991-03-20 Sharp Corp 絶縁膜の製造方法及びその製造装置
JPH0466175A (ja) * 1990-07-03 1992-03-02 Seiko Epson Corp 水切り乾燥方法
JPH04346431A (ja) * 1991-05-24 1992-12-02 Mitsubishi Electric Corp 半導体シリコンウェハの洗浄装置
EP0739252B2 (de) * 1993-09-22 2004-10-06 Legacy Systems, Inc. Verfahren und vorrichtung zur behandlung einer halbleiterscheibe in einer flüssigkeit

Also Published As

Publication number Publication date
DE69624830D1 (de) 2002-12-19
AU6872096A (en) 1997-03-19
DK1199740T3 (da) 2006-03-27
SK284835B6 (sk) 2005-12-01
HUP9802482A3 (en) 2002-11-28
ATE227885T1 (de) 2002-11-15
DE19531031A1 (de) 1997-02-27
ES2250292T3 (es) 2006-04-16
EP1199740B1 (de) 2005-11-09
SI1199740T1 (sl) 2006-06-30
CA2228168A1 (en) 1997-03-06
WO1997008742A1 (en) 1997-03-06
CZ291335B6 (cs) 2003-02-12
JP3857314B2 (ja) 2006-12-13
HK1043661B (en) 2006-03-03
DE69624830T2 (de) 2003-03-27
ES2186800T3 (es) 2003-05-16
IL123042A (en) 2001-04-30
EP1199740A3 (de) 2003-09-03
DE19531031C2 (de) 1997-08-21
TW427952B (en) 2001-04-01
PL183355B1 (pl) 2002-06-28
RU2141700C1 (ru) 1999-11-20
MX9801464A (es) 1998-11-30
NO980734D0 (no) 1998-02-20
JPH11514496A (ja) 1999-12-07
CN1091542C (zh) 2002-09-25
HK1010280A1 (en) 1999-06-17
DE69635427D1 (de) 2005-12-15
CZ51798A3 (cs) 1998-07-15
EP1199740A2 (de) 2002-04-24
PL325121A1 (en) 1998-07-06
EP0846334B1 (de) 2002-11-13
AU697397B2 (en) 1998-10-08
EP0846334A1 (de) 1998-06-10
KR19990037642A (ko) 1999-05-25
DE69635427T2 (de) 2006-07-27
PT846334E (pt) 2003-02-28
CN1192824A (zh) 1998-09-09
SK21298A3 (en) 1998-10-07
NO980734L (no) 1998-02-20
UA51663C2 (uk) 2002-12-16
ATE309613T1 (de) 2005-11-15
IL123042A0 (en) 1998-09-24
HUP9802482A2 (hu) 1999-02-01
HK1043661A1 (en) 2002-09-20

Similar Documents

Publication Publication Date Title
DK1199740T3 (da) Fremgangsmpde til törring af silicium
DK0732975T3 (da) Væskeforstøvningsapparat og -fremgangsmåde
SE8304716L (sv) Forfarande jemte anordning for rening av rokgaser
RU2001126885A (ru) Изделие из керамики, используемое в условиях контакта с водой, и способ его обработки для придания устойчивости к загрязнению
JPS55121865A (en) Coating method
ATE186423T1 (de) Verfahren und vorrichtung zur nassbehandlung von substraten in einem behälter
AU8694891A (en) Method and apparatus for the removal of constituents from a waste gas
CA2160039A1 (en) Method for separating sulfone from a hydrocarbon stream having a small concentration of sulfone
JPS5735323A (en) Removal of photoresist film
JPS57211787A (en) Amorphous silicon diode
JPS6476726A (en) Manufacture of semiconductor
KR910019147A (ko) 폴리실리콘층의 에칭전 Dip에칭처리방법
JPS5572053A (en) Preparation of semiconductor device
EP0186461A3 (de) Method of producing a semiconductor light emitting device
KR980003884A (ko) 레지스트 패턴 형성방법
JPS57211235A (en) Manufacture of semiconductor device
JPS5561028A (en) Preparation of semiconductor device
KR920020742A (ko) 반도체 장치의 기준 전극 제조방법
KR970051881A (ko) 반도체 소자의 감광막 도포 방법
KR940009764A (ko) 경사식 습식 식각조를 이용한 산화막 습식식각 방법
JPS5553444A (en) Preparation of semiconductor device
JPS53106389A (en) Washing method for membrane separation apparatus
JPS5414678A (en) Processing method for surface of semiconductor device
JPS55138843A (en) Method of etching thin film of electronic part or the like
KR950007004A (ko) 반도체 소자의 질화막 제거 방법