DK1199740T3 - Fremgangsmpde til törring af silicium - Google Patents

Fremgangsmpde til törring af silicium

Info

Publication number: DK1199740T3
Authority: DK; Denmark
Prior art keywords: substrate; bath; liquid; liquid bath; separating
Prior art date: 1995-08-23

Application number

DK01130669T

Other languages

Danish (da)

English (en)

Inventor

Dieter Herrmannsdoerfer

Wilhelm Schellenberger

Original Assignee

Ictop Entwicklungs Gmbh

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-08-23

Filing date

1996-08-09

Publication date

2006-03-27

1996-08-09 Application filed by Ictop Entwicklungs Gmbh filed Critical Ictop Entwicklungs Gmbh

2006-03-27 Application granted granted Critical

2006-03-27 Publication of DK1199740T3 publication Critical patent/DK1199740T3/da

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Landscapes

Cleaning Or Drying Semiconductors (AREA)
Drying Of Solid Materials (AREA)
Silicon Compounds (AREA)
Inorganic Insulating Materials (AREA)
Detergent Compositions (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)

DK01130669T 1995-08-23 1996-08-09 Fremgangsmpde til törring af silicium DK1199740T3 (da)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
DE19531031A DE19531031C2 (de)	1995-08-23	1995-08-23	Verfahren zum Trocknen von Silizium
EP96929234A EP0846334B1 (de)	1995-08-23	1996-08-09	Verfahren zum Trocknen von Substraten

Publications (1)

Publication Number	Publication Date
DK1199740T3 true DK1199740T3 (da)	2006-03-27

Family

ID=7770207

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
DK01130669T DK1199740T3 (da)	1995-08-23	1996-08-09	Fremgangsmpde til törring af silicium
DK96929234T DK0846334T3 (da)	1995-08-23	1996-08-09	Fremgangsmåde til tørring af substrater

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
DK96929234T DK0846334T3 (da)	1995-08-23	1996-08-09	Fremgangsmåde til tørring af substrater

Country Status (24)

Country	Link
EP (2)	EP1199740B1 (de)
JP (1)	JP3857314B2 (de)
KR (1)	KR19990037642A (de)
CN (1)	CN1091542C (de)
AT (2)	ATE309613T1 (de)
AU (1)	AU697397B2 (de)
CA (1)	CA2228168A1 (de)
CZ (1)	CZ291335B6 (de)
DE (3)	DE19531031C2 (de)
DK (2)	DK1199740T3 (de)
ES (2)	ES2250292T3 (de)
HK (1)	HK1043661B (de)
HU (1)	HUP9802482A3 (de)
IL (1)	IL123042A (de)
MX (1)	MX9801464A (de)
NO (1)	NO980734L (de)
PL (1)	PL183355B1 (de)
PT (1)	PT846334E (de)
RU (1)	RU2141700C1 (de)
SI (1)	SI1199740T1 (de)
SK (1)	SK284835B6 (de)
TW (1)	TW427952B (de)
UA (1)	UA51663C2 (de)
WO (1)	WO1997008742A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE19613620C2 (de)	1996-04-04	1998-04-16	Steag Micro Tech Gmbh	Verfahren und Vorrichtung zum Trocknen von Substraten
DE19800584C2 (de) *	1998-01-09	2002-06-20	Steag Micro Tech Gmbh	Verfahren und Vorrichtung zum Trocknen von Substraten
DE19833257C1 (de) *	1998-07-23	1999-09-30	Wacker Siltronic Halbleitermat	Verfahren zur Herstellung einer Halbleiterscheibe
DE19927457C2 (de) *	1999-06-16	2002-06-13	Wacker Siltronic Halbleitermat	Verwendung eines bekannten Verfahrens als Vorbehandlung zur Bestimmung der Diffusionslängen von Minoritätsträgern in einer Halbleiterscheibe
DE10036691A1 (de) *	2000-07-27	2002-02-14	Wacker Siltronic Halbleitermat	Verfahren zur chemischen Behandlung von Halbleiterscheiben
DE10064081C2 (de) *	2000-12-21	2002-06-06	Wacker Siltronic Halbleitermat	Verfahren zur Herstellung einer Halbleiterscheibe
DE10360269A1 (de) *	2003-12-17	2005-07-28	Friedrich-Schiller-Universität Jena	Verfahren zur schnellen Mischung von kleinvolumigen Flüssigkeiten und Kit zu dessen Anwendung
WO2006066115A2 (en)	2004-12-17	2006-06-22	The Procter & Gamble Company	Process for extracting liquid from a fabric
KR100897581B1 (ko)	2007-11-14	2009-05-14	주식회사 실트론	웨이퍼 건조 방법
RU2486287C2 (ru) *	2011-04-29	2013-06-27	Антон Викторович Мантузов	Способ очистки поверхности полупроводниковых пластин и регенерации травильных растворов
CN114993028B (zh) *	2022-06-17	2023-05-30	高景太阳能股份有限公司	一种硅片烘干处理方法及系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2722783A1 (de) *	1977-05-20	1978-11-30	Wacker Chemitronic	Verfahren zum reinigen von silicium
US4169807A (en) *	1978-03-20	1979-10-02	Rca Corporation	Novel solvent drying agent
DE3317286A1 (de) *	1983-05-11	1984-11-22	Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen	Verfahren zur reinigung von silicium durch saeureeinwirkung
FR2591324B1 (fr) *	1985-12-10	1989-02-17	Recif Sa	Appareil pour le sechage unitaire des plaquettes de silicium par centrifugation
JPS62198127A (ja) *	1986-02-25	1987-09-01	Sanyo Electric Co Ltd	半導体ウエハの洗浄方法
US4722752A (en) *	1986-06-16	1988-02-02	Robert F. Orr	Apparatus and method for rinsing and drying silicon wafers
US4902350A (en) *	1987-09-09	1990-02-20	Robert F. Orr	Method for rinsing, cleaning and drying silicon wafers
NL8900480A (nl) *	1989-02-27	1990-09-17	Philips Nv	Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.
JPH0366126A (ja) *	1989-08-04	1991-03-20	Sharp Corp	絶縁膜の製造方法及びその製造装置
JPH0466175A (ja) *	1990-07-03	1992-03-02	Seiko Epson Corp	水切り乾燥方法
JPH04346431A (ja) *	1991-05-24	1992-12-02	Mitsubishi Electric Corp	半導体シリコンウェハの洗浄装置
EP0739252B2 (de) *	1993-09-22	2004-10-06	Legacy Systems, Inc.	Verfahren und vorrichtung zur behandlung einer halbleiterscheibe in einer flüssigkeit

1995
- 1995-08-23 DE DE19531031A patent/DE19531031C2/de not_active Expired - Fee Related
1996
- 1996-08-09 SK SK212-98A patent/SK284835B6/sk unknown
- 1996-08-09 CN CN96196222A patent/CN1091542C/zh not_active Expired - Fee Related
- 1996-08-09 AT AT01130669T patent/ATE309613T1/de active
- 1996-08-09 DE DE69624830T patent/DE69624830T2/de not_active Expired - Lifetime
- 1996-08-09 PT PT96929234T patent/PT846334E/pt unknown
- 1996-08-09 ES ES01130669T patent/ES2250292T3/es not_active Expired - Lifetime
- 1996-08-09 IL IL12304296A patent/IL123042A/en not_active IP Right Cessation
- 1996-08-09 PL PL96325121A patent/PL183355B1/pl not_active IP Right Cessation
- 1996-08-09 EP EP01130669A patent/EP1199740B1/de not_active Expired - Lifetime
- 1996-08-09 CZ CZ1998517A patent/CZ291335B6/cs not_active IP Right Cessation
- 1996-08-09 SI SI9630728T patent/SI1199740T1/sl unknown
- 1996-08-09 ES ES96929234T patent/ES2186800T3/es not_active Expired - Lifetime
- 1996-08-09 DE DE69635427T patent/DE69635427T2/de not_active Expired - Lifetime
- 1996-08-09 DK DK01130669T patent/DK1199740T3/da active
- 1996-08-09 AT AT96929234T patent/ATE227885T1/de active
- 1996-08-09 DK DK96929234T patent/DK0846334T3/da active
- 1996-08-09 RU RU98104458A patent/RU2141700C1/ru not_active IP Right Cessation
- 1996-08-09 HU HU9802482A patent/HUP9802482A3/hu unknown
- 1996-08-09 KR KR1019980701119A patent/KR19990037642A/ko not_active Ceased
- 1996-08-09 JP JP50977197A patent/JP3857314B2/ja not_active Expired - Fee Related
- 1996-08-09 EP EP96929234A patent/EP0846334B1/de not_active Expired - Lifetime
- 1996-08-09 AU AU68720/96A patent/AU697397B2/en not_active Ceased
- 1996-08-09 WO PCT/EP1996/003541 patent/WO1997008742A1/en not_active Ceased
- 1996-08-09 CA CA002228168A patent/CA2228168A1/en not_active Abandoned
- 1996-08-20 TW TW085110167A patent/TW427952B/zh not_active IP Right Cessation
- 1996-09-08 UA UA98020935A patent/UA51663C2/uk unknown
1998
- 1998-02-20 NO NO980734A patent/NO980734L/no unknown
- 1998-02-23 MX MX9801464A patent/MX9801464A/es not_active IP Right Cessation
- 1998-10-14 HK HK02104685.0A patent/HK1043661B/en not_active IP Right Cessation

Also Published As

Publication number	Publication date
DE69624830D1 (de)	2002-12-19
AU6872096A (en)	1997-03-19
SK284835B6 (sk)	2005-12-01
HUP9802482A3 (en)	2002-11-28
ATE227885T1 (de)	2002-11-15
DE19531031A1 (de)	1997-02-27
ES2250292T3 (es)	2006-04-16
EP1199740B1 (de)	2005-11-09
SI1199740T1 (sl)	2006-06-30
CA2228168A1 (en)	1997-03-06
WO1997008742A1 (en)	1997-03-06
CZ291335B6 (cs)	2003-02-12
JP3857314B2 (ja)	2006-12-13
HK1043661B (en)	2006-03-03
DE69624830T2 (de)	2003-03-27
ES2186800T3 (es)	2003-05-16
IL123042A (en)	2001-04-30
EP1199740A3 (de)	2003-09-03
DE19531031C2 (de)	1997-08-21
TW427952B (en)	2001-04-01
PL183355B1 (pl)	2002-06-28
RU2141700C1 (ru)	1999-11-20
MX9801464A (es)	1998-11-30
NO980734D0 (no)	1998-02-20
JPH11514496A (ja)	1999-12-07
CN1091542C (zh)	2002-09-25
HK1010280A1 (en)	1999-06-17
DE69635427D1 (de)	2005-12-15
CZ51798A3 (cs)	1998-07-15
EP1199740A2 (de)	2002-04-24
PL325121A1 (en)	1998-07-06
EP0846334B1 (de)	2002-11-13
AU697397B2 (en)	1998-10-08
DK0846334T3 (da)	2003-02-10
EP0846334A1 (de)	1998-06-10
KR19990037642A (ko)	1999-05-25
DE69635427T2 (de)	2006-07-27
PT846334E (pt)	2003-02-28
CN1192824A (zh)	1998-09-09
SK21298A3 (en)	1998-10-07
NO980734L (no)	1998-02-20
UA51663C2 (uk)	2002-12-16
ATE309613T1 (de)	2005-11-15
IL123042A0 (en)	1998-09-24
HUP9802482A2 (hu)	1999-02-01
HK1043661A1 (en)	2002-09-20

Publication	Publication Date	Title
NO980734L (no)	1998-02-20	Fremgangsmåte for törking av silisium
KR870009450A (ko)	1987-10-26	반도체 기판상에 텅스텐을 선택적으로 부착시키는 방법
DE58908255D1 (de)	1994-10-06	Verfahren zur nasschemischen Oberflächenbehandlung von Halbleiterscheiben.
KR940027129A (ko)	1994-12-10	반도체 소자의 필드 산화막 형성 방법
RU2001126885A (ru)	2003-07-20	Изделие из керамики, используемое в условиях контакта с водой, и способ его обработки для придания устойчивости к загрязнению
EP1100117A3 (de)	2001-08-29	Oberflächenbehandlungsverfahren für Siliziumwafer
JPS5735323A (en)	1982-02-25	Removal of photoresist film
KR910019147A (ko)	1991-11-30	폴리실리콘층의 에칭전 Dip에칭처리방법
CA2160039A1 (en)	1996-08-15	Method for separating sulfone from a hydrocarbon stream having a small concentration of sulfone
JPS6442822A (en)	1989-02-15	Processing of semiconductor substrate
KR910019127A (ko)	1991-11-30	반도체장치의 웰(Well) 영역형성방법
KR980003884A (ko)	1998-03-30	레지스트 패턴 형성방법
KR940009764A (ko)	1994-05-24	경사식 습식 식각조를 이용한 산화막 습식식각 방법
JPS57211235A (en)	1982-12-25	Manufacture of semiconductor device
KR920020742A (ko)	1992-11-21	반도체 장치의 기준 전극 제조방법
KR880011916A (ko)	1988-10-31	반도체 장치의 제조방법
JPS5572053A (en)	1980-05-30	Preparation of semiconductor device
JPS5561028A (en)	1980-05-08	Preparation of semiconductor device
KR970051881A (ko)	1997-07-29	반도체 소자의 감광막 도포 방법
KR950027904A (ko)	1995-10-18	플라즈마 식각후의 실리콘막 표면 처리 방법
KR970016832A (ko)	1997-04-28	산화막의 습식 에칭방법
KR950007004A (ko)	1995-03-21	반도체 소자의 질화막 제거 방법
KR970008396A (ko)	1997-02-24	다중합체(polymer) 제거방법
GB2190368B (en)	1989-12-13	Method of removing film from dendritic web silicon
KR900002419A (ko)	1990-02-28	선택적 측면벽 도핑기술(sswdt)을 이용한 반도체 소자의 고농도 소스영역 및 캐패시터 표면영역 형성방법과 그 반도체 집적소자