ATE309613T1 - Ein verfahren zum trocknen von siliziumsubstraten - Google Patents

Ein verfahren zum trocknen von siliziumsubstraten

Info

Publication number
ATE309613T1
ATE309613T1 AT01130669T AT01130669T ATE309613T1 AT E309613 T1 ATE309613 T1 AT E309613T1 AT 01130669 T AT01130669 T AT 01130669T AT 01130669 T AT01130669 T AT 01130669T AT E309613 T1 ATE309613 T1 AT E309613T1
Authority
AT
Austria
Prior art keywords
substrate
bath
liquid
liquid bath
silicon substrates
Prior art date
Application number
AT01130669T
Other languages
English (en)
Inventor
Wilhelm Schellenberger
Dieter Herrmannsdoerfer
Original Assignee
Ictop Entwicklungs Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ictop Entwicklungs Gmbh filed Critical Ictop Entwicklungs Gmbh
Application granted granted Critical
Publication of ATE309613T1 publication Critical patent/ATE309613T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Silicon Compounds (AREA)
  • Detergent Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Insulating Materials (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
AT01130669T 1995-08-23 1996-08-09 Ein verfahren zum trocknen von siliziumsubstraten ATE309613T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19531031A DE19531031C2 (de) 1995-08-23 1995-08-23 Verfahren zum Trocknen von Silizium

Publications (1)

Publication Number Publication Date
ATE309613T1 true ATE309613T1 (de) 2005-11-15

Family

ID=7770207

Family Applications (2)

Application Number Title Priority Date Filing Date
AT01130669T ATE309613T1 (de) 1995-08-23 1996-08-09 Ein verfahren zum trocknen von siliziumsubstraten
AT96929234T ATE227885T1 (de) 1995-08-23 1996-08-09 Verfahren zum trocknen von substraten

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT96929234T ATE227885T1 (de) 1995-08-23 1996-08-09 Verfahren zum trocknen von substraten

Country Status (24)

Country Link
EP (2) EP0846334B1 (de)
JP (1) JP3857314B2 (de)
KR (1) KR19990037642A (de)
CN (1) CN1091542C (de)
AT (2) ATE309613T1 (de)
AU (1) AU697397B2 (de)
CA (1) CA2228168A1 (de)
CZ (1) CZ291335B6 (de)
DE (3) DE19531031C2 (de)
DK (2) DK0846334T3 (de)
ES (2) ES2186800T3 (de)
HK (1) HK1043661B (de)
HU (1) HUP9802482A3 (de)
IL (1) IL123042A (de)
MX (1) MX9801464A (de)
NO (1) NO980734D0 (de)
PL (1) PL183355B1 (de)
PT (1) PT846334E (de)
RU (1) RU2141700C1 (de)
SI (1) SI1199740T1 (de)
SK (1) SK284835B6 (de)
TW (1) TW427952B (de)
UA (1) UA51663C2 (de)
WO (1) WO1997008742A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19800584C2 (de) * 1998-01-09 2002-06-20 Steag Micro Tech Gmbh Verfahren und Vorrichtung zum Trocknen von Substraten
DE19613620C2 (de) 1996-04-04 1998-04-16 Steag Micro Tech Gmbh Verfahren und Vorrichtung zum Trocknen von Substraten
DE19833257C1 (de) * 1998-07-23 1999-09-30 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
DE19927457C2 (de) * 1999-06-16 2002-06-13 Wacker Siltronic Halbleitermat Verwendung eines bekannten Verfahrens als Vorbehandlung zur Bestimmung der Diffusionslängen von Minoritätsträgern in einer Halbleiterscheibe
DE10036691A1 (de) * 2000-07-27 2002-02-14 Wacker Siltronic Halbleitermat Verfahren zur chemischen Behandlung von Halbleiterscheiben
DE10064081C2 (de) * 2000-12-21 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
DE10360269A1 (de) * 2003-12-17 2005-07-28 Friedrich-Schiller-Universität Jena Verfahren zur schnellen Mischung von kleinvolumigen Flüssigkeiten und Kit zu dessen Anwendung
WO2006066115A2 (en) 2004-12-17 2006-06-22 The Procter & Gamble Company Process for extracting liquid from a fabric
KR100897581B1 (ko) 2007-11-14 2009-05-14 주식회사 실트론 웨이퍼 건조 방법
RU2486287C2 (ru) * 2011-04-29 2013-06-27 Антон Викторович Мантузов Способ очистки поверхности полупроводниковых пластин и регенерации травильных растворов
CN114993028B (zh) * 2022-06-17 2023-05-30 高景太阳能股份有限公司 一种硅片烘干处理方法及系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2722783A1 (de) * 1977-05-20 1978-11-30 Wacker Chemitronic Verfahren zum reinigen von silicium
US4169807A (en) * 1978-03-20 1979-10-02 Rca Corporation Novel solvent drying agent
DE3317286A1 (de) * 1983-05-11 1984-11-22 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur reinigung von silicium durch saeureeinwirkung
FR2591324B1 (fr) * 1985-12-10 1989-02-17 Recif Sa Appareil pour le sechage unitaire des plaquettes de silicium par centrifugation
JPS62198127A (ja) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd 半導体ウエハの洗浄方法
US4722752A (en) * 1986-06-16 1988-02-02 Robert F. Orr Apparatus and method for rinsing and drying silicon wafers
US4902350A (en) * 1987-09-09 1990-02-20 Robert F. Orr Method for rinsing, cleaning and drying silicon wafers
NL8900480A (nl) * 1989-02-27 1990-09-17 Philips Nv Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.
JPH0366126A (ja) * 1989-08-04 1991-03-20 Sharp Corp 絶縁膜の製造方法及びその製造装置
JPH0466175A (ja) * 1990-07-03 1992-03-02 Seiko Epson Corp 水切り乾燥方法
JPH04346431A (ja) * 1991-05-24 1992-12-02 Mitsubishi Electric Corp 半導体シリコンウェハの洗浄装置
EP0739252B2 (de) * 1993-09-22 2004-10-06 Legacy Systems, Inc. Verfahren und vorrichtung zur behandlung einer halbleiterscheibe in einer flüssigkeit

Also Published As

Publication number Publication date
SK284835B6 (sk) 2005-12-01
AU6872096A (en) 1997-03-19
DK0846334T3 (da) 2003-02-10
KR19990037642A (ko) 1999-05-25
CZ291335B6 (cs) 2003-02-12
HK1010280A1 (en) 1999-06-17
NO980734L (no) 1998-02-20
DE69624830D1 (de) 2002-12-19
CA2228168A1 (en) 1997-03-06
DK1199740T3 (da) 2006-03-27
HK1043661A1 (en) 2002-09-20
SI1199740T1 (sl) 2006-06-30
DE19531031A1 (de) 1997-02-27
EP0846334A1 (de) 1998-06-10
JPH11514496A (ja) 1999-12-07
PT846334E (pt) 2003-02-28
HUP9802482A3 (en) 2002-11-28
EP1199740B1 (de) 2005-11-09
JP3857314B2 (ja) 2006-12-13
CZ51798A3 (cs) 1998-07-15
PL325121A1 (en) 1998-07-06
CN1091542C (zh) 2002-09-25
ES2250292T3 (es) 2006-04-16
EP1199740A3 (de) 2003-09-03
UA51663C2 (uk) 2002-12-16
AU697397B2 (en) 1998-10-08
DE69635427D1 (de) 2005-12-15
HUP9802482A2 (hu) 1999-02-01
PL183355B1 (pl) 2002-06-28
IL123042A (en) 2001-04-30
SK21298A3 (en) 1998-10-07
IL123042A0 (en) 1998-09-24
ATE227885T1 (de) 2002-11-15
MX9801464A (es) 1998-11-30
NO980734D0 (no) 1998-02-20
WO1997008742A1 (en) 1997-03-06
EP1199740A2 (de) 2002-04-24
HK1043661B (en) 2006-03-03
CN1192824A (zh) 1998-09-09
DE69624830T2 (de) 2003-03-27
ES2186800T3 (es) 2003-05-16
TW427952B (en) 2001-04-01
DE69635427T2 (de) 2006-07-27
RU2141700C1 (ru) 1999-11-20
DE19531031C2 (de) 1997-08-21
EP0846334B1 (de) 2002-11-13

Similar Documents

Publication Publication Date Title
ATE309613T1 (de) Ein verfahren zum trocknen von siliziumsubstraten
EP0252451A3 (de) Integriertes Hybrid-Schaltungssubstrat, Verfahren zum Herstellen eines Schaltungsmusters und Apparat zum Herstellen desselben
DE3778589D1 (de) Verfahren zur oberflaechenmodifizierung von feinverteilten siliciumdioxid.
ATE272732T1 (de) Vorrichtung zur anodischen oxidation und mit ihr verbundener apparat und verfahren
DE3887477D1 (de) Verfahren zur Obenflächenbehandlung eines Halbleiterplättchens.
DE58908255D1 (de) Verfahren zur nasschemischen Oberflächenbehandlung von Halbleiterscheiben.
FR2523876B1 (fr) Appareil et procede pour appliquer un revetement sur un substrat avec durcissement sous vide et recuperation du solvant
DE59609486D1 (de) Verfahren zur strukturierung porösen siliciums
JPS5434751A (en) Washing method for silicon wafer
FR2520374B1 (fr) Compositions et procede pour l'elimination chimique selective de revetements superficiels durs de substrats en superalliage
ATE186423T1 (de) Verfahren und vorrichtung zur nassbehandlung von substraten in einem behälter
DE3786323D1 (de) Vorrichtung und verfahren zur regulierung der struktur optischer substrate.
JPS5735323A (en) Removal of photoresist film
CA2160039A1 (en) Method for separating sulfone from a hydrocarbon stream having a small concentration of sulfone
GB2044240B (en) Method of and apparatus for sewage treatment
JPS53106387A (en) Washing method for membrane separation apparatus
DE3780759D1 (de) Verfahren zum trennen von alkalimetallbikarbonat-teilchen von einer an ihrer oberflaeche adsorbierten fluessigen schicht von chlorhydrat einer azotierten organischen base und verfahren zur herstellung von alkalimetallbikarbonat.
DE3889830D1 (de) Verfahren zum Ätzen von (100) Silizium.
JPS57211235A (en) Manufacture of semiconductor device
KR940009764A (ko) 경사식 습식 식각조를 이용한 산화막 습식식각 방법
KR940016537A (ko) 반도체 웨이퍼 세정방법
KR970051881A (ko) 반도체 소자의 감광막 도포 방법
GB2190368B (en) Method of removing film from dendritic web silicon
ATE222302T1 (de) Verfahren und vorrichtung zum entfernen von dendriten
JPS6453546A (en) Method and apparatus for dry etching

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification

Ref document number: 1199740

Country of ref document: EP