DK0908535T3 - Fremgangsmåde til at dekapere et substrat og anlæg til at udføre fremgangsmåden - Google Patents

Fremgangsmåde til at dekapere et substrat og anlæg til at udføre fremgangsmåden

Info

Publication number
DK0908535T3
DK0908535T3 DK97203136T DK97203136T DK0908535T3 DK 0908535 T3 DK0908535 T3 DK 0908535T3 DK 97203136 T DK97203136 T DK 97203136T DK 97203136 T DK97203136 T DK 97203136T DK 0908535 T3 DK0908535 T3 DK 0908535T3
Authority
DK
Denmark
Prior art keywords
substrate
electrodes
decapitating
plant
carrying
Prior art date
Application number
DK97203136T
Other languages
Danish (da)
English (en)
Inventor
Brande Pierre Vanden
Alain Weymeersch
Original Assignee
Cockerill Rech & Dev
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cockerill Rech & Dev filed Critical Cockerill Rech & Dev
Application granted granted Critical
Publication of DK0908535T3 publication Critical patent/DK0908535T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/32779—Continuous moving of batches of workpieces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Transplanting Machines (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DK97203136T 1997-10-08 1997-10-08 Fremgangsmåde til at dekapere et substrat og anlæg til at udføre fremgangsmåden DK0908535T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP97203136A EP0908535B1 (de) 1997-10-08 1997-10-08 Verfahren zum Reinigen eines Substrats und Vorrichtung zur Durchführung des Verfahrens

Publications (1)

Publication Number Publication Date
DK0908535T3 true DK0908535T3 (da) 2003-11-10

Family

ID=8228812

Family Applications (1)

Application Number Title Priority Date Filing Date
DK97203136T DK0908535T3 (da) 1997-10-08 1997-10-08 Fremgangsmåde til at dekapere et substrat og anlæg til at udføre fremgangsmåden

Country Status (8)

Country Link
US (1) US6231727B1 (de)
EP (1) EP0908535B1 (de)
JP (1) JP4004152B2 (de)
AT (1) ATE245717T1 (de)
DE (1) DE69723699T2 (de)
DK (1) DK0908535T3 (de)
ES (1) ES2203748T3 (de)
PT (1) PT908535E (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000320464A (ja) * 1999-05-10 2000-11-21 Saginomiya Seisakusho Inc 容量可変型圧縮機用制御弁
JP2003512526A (ja) * 1999-10-15 2003-04-02 アドバンスト・エナジー・インダストリーズ・インコーポレイテッド 複数の電極のスパッタリングシステムにおいて基板にバイアスをかける方法および装置
RU2200771C2 (ru) * 2001-05-30 2003-03-20 Российский химико-технологический университет им. Д.И. Менделеева Способ модификации поверхности металлов
WO2002101768A1 (en) * 2001-06-08 2002-12-19 Matsushita Electric Industrial Co., Ltd. Method of manufacturing double surface metallized film, and metallized film capacitor using the method
KR100701400B1 (ko) * 2005-11-01 2007-03-28 재단법인 포항산업과학연구원 오일 미스트 제거를 위한 저온플라즈마 예비 하전 장치
EP1783814A1 (de) * 2005-11-07 2007-05-09 ARCELOR France Verfahren und Einrichtung zum Reinigen eines Metallbandes mittels Magnetron-Zerstäubung
EP1783815A1 (de) * 2005-11-07 2007-05-09 ARCELOR France Verfahren und Anlage zum Ätzen eines Metallbandes mittels Vakuum-Magnetron-Zerstäubung
CN101796213B (zh) * 2007-08-30 2012-07-11 皇家飞利浦电子股份有限公司 溅射系统
JP5810462B2 (ja) * 2011-07-21 2015-11-11 地方独立行政法人山口県産業技術センター プラズマ処理装置及び基材の表面処理方法
CN110832108B (zh) * 2017-06-30 2023-03-31 凸版印刷株式会社 膜处理方法及膜制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2867912A (en) * 1956-05-11 1959-01-13 Horace Dawson Method for the decontamination of metal foils
JPS60126832A (ja) * 1983-12-14 1985-07-06 Hitachi Ltd ドライエツチング方法および装置
JPS62274080A (ja) * 1986-05-21 1987-11-28 Hitachi Ltd プラズマ処理方法
US5283087A (en) * 1988-02-05 1994-02-01 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and apparatus
US5178739A (en) * 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
JPH0768620B2 (ja) * 1991-09-30 1995-07-26 中外炉工業株式会社 金属ストリップの表面清浄化装置

Also Published As

Publication number Publication date
EP0908535A1 (de) 1999-04-14
US6231727B1 (en) 2001-05-15
ATE245717T1 (de) 2003-08-15
JP4004152B2 (ja) 2007-11-07
PT908535E (pt) 2003-11-28
DE69723699D1 (de) 2003-08-28
DE69723699T2 (de) 2004-06-17
ES2203748T3 (es) 2004-04-16
JPH11209886A (ja) 1999-08-03
EP0908535B1 (de) 2003-07-23

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