Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01C—RESISTORS
  • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
  • H01C7/006—Thin film resistors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01C—RESISTORS
  • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
  • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
  • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin-film techniques
  • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin-film techniques by sputtering

Definitions

• the invention relates to a Me-C: H layer as a high-resistance electrical resistance layer and to a discrete electrical resistance and the use of the electrical resistance layer.
• DE-OS 2509623 describes a method for producing electrical resistance layers made of Ta-C x with 0.35>X> 0.8 by sputtering.
• This step shows that in the Ta-C system the low TC of -25 ppm / K goes hand in hand with a specific resistance of 200-300 ⁇ cm (e.g. see Figure 3). These layers are therefore for high-resistance precision resistors, i.e. not suitable for precision resistors with a specific resistance greater than 1,000 ⁇ cm.
• EP 0247413 A1 also describes resistance layers which are produced by sputtering zircon / palladium, titanium / gold, zircon / gold, hafnium / gold or titanium / palladium in a reactive gas atmosphere. According to the teaching of this step, layers in the form of nitrides (claim 3) or carbides or carbonitrides are expressly to be produced (description column 3, lines 16-19).
• the layers produced according to this document therefore consist of metallic conductive inclusions (gold, palladium or platinum) in a metallic conductive matrix (carbide or nitride). Such metal composite layers are therefore likewise not suitable as layers with a high specific resistance. The temperature dependence of the resistance is not specified.
• TK temperature coefficient of resistance
• the resistance value of a discrete electrical resistance can be increased by a microstructuring process (coils in cylindrical, meandering in flat resistance bodies).
• the final value / basic value ratio to be achieved in this process is, however, set an upper limit by the limited total area of the resistance, since the conductor track must not be narrow as desired.
• the trend in the development of discrete electrical resistors is towards miniaturization.
• the area of the smallest designs is currently only around 1 x 2 mm2. The requirement for high impedance can therefore only be met by increasing the specific resistance of the layer material used.
• an electrical resistance layer which consists of 40-95 atom% carbon, 4-60 atom% of one or more metals and 1-30 atom% hydrogen, with no carbide formation taking place here.
• This layer advantageously has a specific resistance of greater than 1,000 ⁇ cm and a TK between -100 and + 100 ppm / K.
• certain Me-C: H layers have a specific resistance of greater than 1,000 ⁇ cm and a TK between -50 and +50 ppm / K if no carbide formation took place between metal and carbon.
• a preferred embodiment provides that metals from the 1st and / or 8th subgroup of the Periodic Table of the Elements (according to the new IUPAC nomenclature from the 8th and / or 9th and / or 10th and / or 11th group) of the Periodic Table of the Elements), in particular those from the copper group and / or platinum group.
• Ag, Pt, Au and / or Cu has proven to be particularly suitable here.
• a further preferred embodiment provides that the layer preferably contains 60-75 atom% of carbon, 25-30 atom% of a metal and 5-8% hydrogen.
• Another advantageous variant provides that part of the carbon is replaced by silicon and / or boron and / or nitrogen. It has proven advantageous to substitute between 1 and 95%, advantageously between 1 and 40%, of the carbon content by silicon and / or boron and / or nitrogen.
• the layers according to the invention consist of a highly cross-linked hydrocarbon matrix with preferably embedded nanocrystalline, metallically conductive particles. With regard to their electrical properties, they behave like metal (positive TC) with high metal contents and semiconductors (negative TC) with sufficiently low metal content.
• Pt-C H, Au-C: H and Cu -C: H around 10,000 ⁇ cm.
• Me-C layers are produced using the methods of the prior art, i.e. with CVD or with PVD.
• a subsequent tempering process preferably in air, subsequently stabilizes the layer properties (pre-aging).
• the changes in the layer structure caused in this way increase in particle size, healing of lattice defects, increase in matrix crosslinking
• changes in chemical composition incorporation of oxygen, expulsion of hydrogen and carbon
• a TK close to 0 ppm / K can be achieved through suitable tempering conditions (temperature, time, surrounding medium).
• a passivation layer e.g. an approx. 100 nm thick amorphous, silicon-containing hydrocarbon layer (a-CSi: H) can be applied.
• the new thin-film material according to the invention accordingly enables higher specific resistances than CrSi (approx. 1,000 ⁇ cm) with the same TC. Due to the special microstructure of the material (dense amorphous network), there is also significantly improved long-term stability.
• the invention further relates to an electrical resistor as a discrete component.
• the electrical resistance layer described is then applied to a substrate in a layer thickness of 10 nanometers to 10 ⁇ m, preferably 50 nanometers to 5 ⁇ m, using the known method.
• AlN, BN, Al 2 O 3, SiC or silicate is used as the substrate.
• the invention also relates to the use of the electrical resistance layer for producing electrical resistors as discrete and / or integrated components in a preferred embodiment and their use in microelectronics.
• Pt-C H layers were produced by reactive HF sputtering.
• the Traget-substrate distance was 5.5 cm, the total pressure 0.020 mbar.
• the ethyne portion of the gas phase was 2% (remainder: argon), the target bias voltage 1.5 kV.
• the target bias voltage 1.5 kV.
• Elemental analysis revealed an atomic platinum fraction ( Pt / (Pt + C) ) of 0.09, the total hydrogen content is less than 30 at%.
• the electrical characterization of the layer after an annealing process (1 h, air, 300 ° C) showed a specific resistance of 19,000 ⁇ cm and a TK of 40 ppm / K at room temperature.
• Pt-CSi H layers have been produced by reactive HF sputtering with tetramethylsilane (TMS).
• TMS tetramethylsilane
• the target-substrate distance was 5.5 cm, the target bias voltage 2.0 kV.
• the TMS partial pressure was 0.001 mbar (rest: argon).
• Elemental analysis revealed an atomic platinum fraction ( Pt / Pt + Si + C ) of 0.33, an atomic silicon fraction ( Si / (Pt + Si + C) ) of 0.12 and an atomic carbon fraction ( C / (Pt + Si + C) ) from 0.55.
• the total hydrogen content is less than 30 at%.
• the electrical characterization of the layer after an annealing process (8h, air, 300 ° C) showed a specific resistance of 63,000 ⁇ cm and a TK of -46 ppm / K at room temperature.

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• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Manufacturing & Machinery (AREA)
• Physics & Mathematics (AREA)
• Electromagnetism (AREA)
• Non-Adjustable Resistors (AREA)
• Apparatuses And Processes For Manufacturing Resistors (AREA)
• Physical Vapour Deposition (AREA)
• Electrodes Of Semiconductors (AREA)

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• 1993
  • 1993-06-15 JP JP5143759A patent/JPH06163201A/ja active Pending
  • 1993-06-15 ES ES93201714T patent/ES2130212T3/es not_active Expired - Lifetime
  • 1993-06-15 EP EP93201714A patent/EP0575003B1/fr not_active Expired - Lifetime
  • 1993-06-15 DE DE59309376T patent/DE59309376D1/de not_active Expired - Fee Related
  • 1993-09-21 TW TW082107731A patent/TW240321B/zh active
• 1996
  • 1996-04-25 US US08/639,327 patent/US5677070A/en not_active Expired - Fee Related
• 1997
  • 1997-02-25 US US08/805,527 patent/US5748069A/en not_active Expired - Fee Related

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