EP0771032A2 - Monolithische integrierte Schaltungsanordnung mit hochfrequenter Verstärkerschaltung - Google Patents

Monolithische integrierte Schaltungsanordnung mit hochfrequenter Verstärkerschaltung Download PDF

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Publication number
EP0771032A2
EP0771032A2 EP96117193A EP96117193A EP0771032A2 EP 0771032 A2 EP0771032 A2 EP 0771032A2 EP 96117193 A EP96117193 A EP 96117193A EP 96117193 A EP96117193 A EP 96117193A EP 0771032 A2 EP0771032 A2 EP 0771032A2
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EP
European Patent Office
Prior art keywords
circuit device
electrode
electrodes
frequency amplifying
capacitor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP96117193A
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English (en)
French (fr)
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EP0771032A3 (de
Inventor
Nobumitsu Murata Manufacturing Co. Ltd. Amachi
Yasushi Murata Manufacturing Co. Ltd. Yamamoto
Koichi Murata Manufacturing Co. Ltd. Sakamoto
Mitsuhiro Murata Manufacturing Co Ltd Tsuchioka
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Publication of EP0771032A2 publication Critical patent/EP0771032A2/de
Publication of EP0771032A3 publication Critical patent/EP0771032A3/de
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers

Definitions

  • the present invention relates to a high-frequency amplifying integrated-circuit device formed on a semiconductor substrate.
  • Fig. 5 is a plan view illustrating the construction of a conventional high-frequency amplifying integrated-circuit device 92 mounted on the top surface of a mother board 100.
  • the high-frequency amplifying integrated-circuit device 92 of Fig. 5 comprises a field-effect transistor 1, an inductor 41, spiral inductors 142, 51 and 52, a capacitor 31, and a self-bias resistor 21 on the top surface of a semiconductor substrate 10, on the bottom surface of which a grounding conductor is formed.
  • the high-frequency amplifying integrated-circuit device 92 is formed as described below.
  • the field-effect transistor 1 comprising a gate electrode 11, a drain electrode 12, and a source electrode 13 is formed on the top surface of the semiconductor substrate 10 made of GaAs or the like.
  • the gate electrode 11 is formed of a first gate electrode 11a, a second gate electrode 11b, a third gate electrode 11c, a fourth gate electrode 11d, and a gate electrode terminal 11t.
  • the drain electrode 12 is formed of a first drain electrode 12a, a second drain electrode 12b, and a drain electrode terminal 12t.
  • the source electrode 13 is formed of a first source electrode 13a, a second source electrode 13b, a third source electrode 13c, a connection electrode 13s, and a connection section 13t1.
  • the connection section 13t1 is a boundary portion between the third source electrode 13c and a connection conductor 14a.
  • the first gate electrode 11a is positioned between the first source electrode 13a and the first drain electrode 12a.
  • the second gate electrode 11b is positioned between the first drain electrode 12a and the second source electrode 13b.
  • the third gate electrode 11c is positioned between the second source electrode 13b and the second drain electrode 12b.
  • the fourth gate electrode 11d is positioned between the second drain electrode 12b and the third source electrode 13c.
  • An inductor 41 is formed of a strip electrode formed on the top surface of the semiconductor substrate 10, with one end thereof being connected to the gate electrode terminal 11t of the gate electrode 11 of the field-effect transistor 1 and the other end thereof being connected to a terminal conductor 71 substantially in a square shape formed on the top surface of the semiconductor substrate 10.
  • the terminal conductor 71 is connected by a bonding wire 61 to an input terminal 101 formed on the top surface of the mother board 100.
  • a grounding conductor is formed on the bottom surface of the semiconductor substrate 10.
  • a spiral inductor 142 has a strip electrode formed in a spiral shape on the top surface of the semiconductor substrate 10, with one end thereof being connected to the terminal conductor 71 and the other end being connected to a terminal conductor 74 substantially in a square shape formed on the top surface of the semiconductor substrate 10.
  • the terminal conductor 74 is connected by a bonding wire 66 to a grounding conductor 103 formed on the top surface of the mother board 100.
  • a spiral inductor 51 is formed of a strip electrode formed in a spiral shape on the top surface of the semiconductor substrate 10, with one end thereof being connected to the drain electrode terminal 12t of the drain electrode 12 of the field-effect transistor 1 and the other end being connected to a terminal conductor 72 substantially in a square shape formed on the top surface of the semiconductor substrate 10.
  • the terminal conductor 72 is connected by a bonding wire 63 to an output terminal 102 formed on the top surface of the mother board 100.
  • a spiral inductor 52 is formed of a strip electrode formed in a spiral shape on the top surface of the semiconductor substrate 10, with one end thereof being connected to the terminal conductor 72 and the other end being connected to a terminal conductor 73 substantially in a square shape formed on the top surface of the semiconductor substrate 10.
  • the terminal conductor 73 is connected by a bonding wire 64 to the grounding conductor 103 formed on the top surface of the mother board 100.
  • the capacitor 31 is formed at a position between the connection conductor 14a and a grounding conductor 81.
  • the self-bias resistor 21 is formed at a position between the connection conductor 14a and the grounding conductor 81.
  • the grounding conductor 81 is connected by a bonding wire 65 to the grounding conductor 103 of the mother board 100.
  • the third source electrode 13c is grounded via a parallel circuit of the capacitor 31 and the self-bias resistor 21.
  • Fig. 6 is a circuit diagram of the high-frequency amplifying integrated-circuit device 92 of Fig. 5.
  • the bonding wires 61, 63, 64, 65 and 66 function as inductors at high frequencies. Therefore, in the conventional high-frequency amplifying integrated-circuit device 92, the respective values of the inductor 41, the spiral inductors 142, 51 and 52, and the capacitor 31 are set so as to have a desired gain at a predetermined frequency by taking the inductance values of the bonding wires 61, 63, 64, 65 and 66 into consideration.
  • FIG. 7 is a graph illustrating the frequency characteristic of the output end reflection coefficient and the gain in the high-frequency amplifying integrated-circuit device 92 of Fig. 5, when the values of the inductor 41, the spiral inductors 51, 52 and 142, and the capacitor 31 are set and the lengths L of the bonding wires 61, 63, 64, 65 and 66 are varied as described below:
  • the lengths L of the bonding wires 61, 63, 64, 65 and 66 are set at values of 240 ⁇ m, 300 ⁇ m and 360 ⁇ m, and the frequency characteristic of the output end reflection coefficient and the gain is shown for each case. As can be seen in Fig. 7, there is a gain of approximately 7 dB at the frequency of 10 GHz. That is, the conventional high-frequency amplifying integrated-circuit device 92 constructed as described above amplifies an input high-frequency signal having a predetermined frequency and outputs the amplified signal.
  • the high-frequency amplifying integrated-circuit device 92 is greatly affected by variations in the inductance values caused by the variations of the lengths L of the bonding wires 61, 63, 64, 65 and 66. Therefore, when the high-frequency amplifying integrated-circuit device 92 is mounted on the mother board 100, variations of the gain are increased at a predetermined frequency. Also, in some cases, these variations of the inductance values of the bonding wires 61, 63, 64, 65 and 66 may cause parasitic oscillation to occur, causing the amplification operation to become unstable. As a result, the yield during mass production is decreased and the manufacturing costs are increased, so the high-frequency amplifying integrated-circuit device 92 cannot be manufactured at a low cost.
  • the high-frequency amplifying integrated-circuit device comprises a semiconductor substrate; and a transistor which is formed on the semiconductor substrate and which has a plurality of first electrodes, a plurality of second electrodes, and at least one third electrode, for amplifying a high-frequency signal input to the plurality of second electrodes and outputting an amplified signal from the third electrode, wherein at least two first electrodes from among the plurality of first electrodes are each grounded via a capacitor.
  • the high-frequency amplifying integrated-circuit device further comprises at least two grounding conductors formed on the semiconductor substrate, to which the at least two first electrodes are each connected via a capacitor, wherein the at least two grounding conductors are connected to each other outside the semiconductor substrate.
  • the electrostatic capacitance values of the two capacitors are preferably set at mutually different values, the capacitance of one capacitor being set at a value within a range of 3 to 50 times as great as that of the other capacitor.
  • the high-frequency amplifying integrated-circuit device is provided on a mother substrate and comprises first terminals connected to the plurality of first electrodes and second terminals connected to the third electrode, wherein the first terminals, the second terminals and at least two of the grounding conductors are each connected by wire bonding terminals formed on the mother substrate.
  • Fig. 1 is a plan view illustrating the construction of a high-frequency amplifying integrated-circuit device 91 mounted on the top surface of a mother board 100 according to an embodiment of the present invention.
  • a feature of the high-frequency amplifying integrated-circuit device 91 is that a capacitor 32 is connected between a first source electrode 13a and a grounding conductor 82 as compared with the prior art of Fig. 5.
  • Figs. 1 and 2 in which Fig. 1 is a plan view of the device and Fig. 2 is a sectional view taken along the line A-A' of Fig. 1.
  • a field-effect transistor 1 is formed on an active layer 15 of the semiconductor substrate 10 made of GaAs.
  • a grounding conductor is formed on the bottom surface of a semiconductor substrate 10.
  • the field-effect transistor 1 comprises a gate electrode 11, a drain electrode 12 and a source electrode 13.
  • the gate electrode 11 is formed of a first gate electrode 11a, a second gate electrode 11b, a third gate electrode 11c, a fourth gate electrode 11d and a gate electrode terminal 11t.
  • the drain electrode 12 is formed of a first drain electrode 12a, a second drain electrode 12b and a drain electrode terminal 12t.
  • the source electrode 13 is formed of a first source electrode 13a, a second source electrode 13b, a third source electrode 13c and a connection electrode 13s.
  • first gate electrode 11a, the second gate electrode 11b and the third gate electrode 11c are provided side by side so as to be parallel to each other.
  • the first gate electrode 11a is positioned between the first source electrode 13a and the first drain electrode 12a with a predetermined spacing from the first source electrode 13a and the first drain electrode 12a.
  • the second gate electrode 11b is positioned between the first drain electrode 12a and the second source electrode 13b with a predetermined spacing from the first drain electrode 12a and the second source electrode 13b.
  • the third gate electrode 11c is positioned between the second source electrode 13b and the second drain electrode 12b with a predetermined spacing from the second source electrode 13b and the second drain electrode 12b.
  • the fourth gate electrode 11d is positioned between the second drain electrode 12b and the third source electrode 13c with a predetermined spacing from the second drain electrode 12b and the third source electrode 13c. Therefore, the first gate electrode 11a, the second gate electrode 11b, the third gate electrode 11c, the first source electrode 13a, the second source electrode 13b, the third source electrode 13c, the first drain electrode 12a and the second drain electrode 12b are formed so as to be parallel to each other.
  • first gate electrode 11a, the second gate electrode 11b, the third gate electrode 11c and the fourth gate electrode 11d are each connected to the gate electrode terminal 11t.
  • the first drain electrode 12a and the second drain electrode 12b are each connected to the drain electrode terminal 12t.
  • the first source electrode 13a, the second source electrode 13b and the third source electrode 13c are each connected to the connection electrode 13s.
  • the gate length of the field-effect transistor 1 is set at 0.5 ⁇ m, and the gate width at 200 ⁇ m.
  • the connection section 13t1 is a boundary portion between the third source electrode 13c and the connection conductor 14a.
  • the connection section 13t2 is a boundary portion between the first source electrode 13a and a connection conductor 14b. Therefore, the source electrode 13 is connected to the connection conductor 14a via the connection section 13t1 and is connected to the connection conductor 14b via the connection section 13t2.
  • the inductor 41 is formed of a strip electrode formed on the top surface of the semiconductor substrate 10, one end of which inductor is connected to the first gate electrode 11a, the second gate electrode 11b, the third gate electrode 11c and the fourth gate electrode 11d each via the gate electrode terminal 11t and the other end of which inductor is connected to the terminal conductor 71 substantially in a square shape formed on the top surface of the semiconductor substrate 10.
  • the terminal conductor 71 is connected by the bonding wire 61 to the input terminal 101 formed on the top surface of the mother board 100.
  • the mother board 100 is made of alumina, a resin or the like.
  • a grounding conductor is formed on the bottom surface of the mother board 100.
  • the high-frequency amplifier integrated-circuit device 91 is mounted at a predetermined position on the top surface of the mother board 100, and a high-frequency oscillator or the like are formed at another portion. Thus, for example, a high-frequency receiving circuit is formed.
  • the high-frequency amplifying integrated-circuit device 91 is bonded to the top surface of the mother board 100 by bonding the grounding conductor formed on the bottom surface of the semiconductor substrate 10 to the conductor film formed on the top surface of the mother board 100 by, for example, heating.
  • An inductor 42 is formed of a strip electrode formed on the top surface of the semiconductor substrate 10, one end of which inductor is connected to the terminal conductor 71 and the other end of which inductor is connected to the terminal conductor 74 substantially in a square shape formed on the top surface of the semiconductor substrate 10.
  • the terminal conductor 74 is connected by the bonding wire 66 to the grounding conductor 103 formed on the top surface of the mother board 100.
  • the spiral inductor 51 is formed of a strip electrode formed in a spiral shape on the top surface of the semiconductor substrate 10, one end of which spiral inductor is connected to the first drain electrode 12a and the second drain electrode 12b via the drain electrode terminal 12t and the other end of which spiral inductor is connected to the terminal conductor 72 substantially in a square shape formed on the top surface of the semiconductor substrate 10.
  • the terminal conductor 72 is connected by the bonding wire 63 to the output terminal 102 formed on the top surface of the mother board 100.
  • the spiral inductor 52 is formed of a strip electrode formed in a spiral shape on the top surface of the semiconductor substrate 10, one end of which spiral inductor is connected to the terminal conductor 72 and the other end of which spiral inductor is connected to the terminal conductor 73 substantially in a square shape formed on the top surface of the semiconductor substrate 10.
  • the terminal conductor 73 is connected by the bonding wire 64 to the grounding conductor 103 formed on the top surface of the mother board 100.
  • the strip electrodes are formed with an insulating film (not shown) sandwiched therebetween, to insulate the two intersecting strip electrodes from each other where they intersect.
  • the capacitor 32 is connected between the connection conductor 14b and the grounding conductor 82. As seen in Fig. 2, the capacitor 32 is formed on the top surface of the semiconductor substrate 10, and has a lower electrode 32b and an upper electrode 32a, between which a dielectric film 32c made of, for example, SiO 2 is sandwiched.
  • the lower electrode 32b is formed so as to be connected to the grounding conductor 82, and the upper electrode 32a is connected to the first source electrode 13a via the connection conductor 14b.
  • the grounding conductor 82 is connected by a bonding wire 62 to a grounding conductor 104 formed on the top surface of the mother board 100.
  • the first source electrode 13a is grounded via the capacitor 32.
  • the capacitor 31 is formed on the top surface of the semiconductor substrate 10 in the same way as the capacitor 32 and is formed between the connection conductor 14a and the grounding conductor 81.
  • the grounding conductor 81 is connected by the bonding wire 65 to the grounding conductor 104 formed on the top surface of the mother board 100.
  • the third source electrode 13c is grounded via the capacitor 31.
  • the self-bias resistor 21 is formed parallel to the capacitor 31 between the connection conductor 14a and the grounding conductor 81.
  • a self-bias voltage proportional to the resistance value of the self-bias resistor 21 is applied to the source electrode 13.
  • the electrostatic capacitance value of the capacitor 31 and the electrostatic capacitance value of the capacitor 32 are set at mutually different values.
  • the electrostatic capacitance value of the capacitor 32 is preferably set at a predetermined value in a range of 3 to 50 times as great as the electrostatic capacitance value of the capacitor 31.
  • the electrostatic capacitance value of the capacitor 32 is set at a value of 40 times as great as the electrostatic capacitance value of the capacitor 31.
  • the present invention is not limited to this example. It is also possible to set the electrostatic capacitance value of the capacitor 31 at a predetermined value in a range of 3 to 50 times as great as the electrostatic capacitance value of the capacitor 32, or more preferably at a value of 40 times as great as the electrostatic capacitance value of the capacitor 32.
  • the electrostatic capacitance value of either one of the capacitors 31 and 32 is set at a predetermined value in a range of 3 to 50 times as great as the electrostatic capacitance value of the other capacitor, and more preferably, the electrostatic capacitance value of either one of the capacitors 31 and 32 is set at a predetermined value of 40 times as great as the electrostatic capacitance value of the other capacitor.
  • the grounding conductor 81 and the grounding conductor 82 are formed so as to be electrically separated on the semiconductor substrate 10, and are connected by the bonding wires 65 and 62 to the grounding conductor 103 and the grounding conductor 104, respectively. Thus, they are connected only outside the semiconductor substrate 10. In such a way, the high-frequency amplifying integrated-circuit device of this embodiment is formed.
  • Fig. 3 is a circuit diagram of the high-frequency amplifying integrated-circuit device 91 of this embodiment.
  • the bonding wires 61, 63, 64, 65 and 66 operate as inductors. Therefore, in the high-frequency amplifying integrated-circuit device 91 of this embodiment, the values of the inductors 41 and 42, the spiral inductors 51 and 52, and the capacitors 31 and 32 are set in order that such high-frequency amplifying integrated-circuit device 91 has a desired gain at a predetermined frequency.
  • the high-frequency amplifying integrated-circuit device 91 constructed as described above amplifies a signal having a predetermined frequency which is input to the gate electrode 11 via the inductor 41 by means of the field-effect transistor 1 and outputs the amplified signal via the spiral inductor 51.
  • Fig. 4 is a graph illustrating the frequency characteristic of the output end reflection coefficient and the gain when the values of the inductor 41, the spiral inductors 142, 51 and 52, and the capacitor 31 are set and the lengths L of the bonding wires 61, 63, 64, 65 and 66 are varied as described below.
  • the electrostatic capacitance value of the capacitor 32 is set at 40 times as great as the electrostatic capacitance value of the capacitor 31.
  • Fig. 4 shows the frequency characteristic of the output end reflection coefficient and the gain when the lengths L of the bonding wires 61, 63, 64, 65 and 66 are set at 240 ⁇ m, 300 ⁇ m and 360 ⁇ m.
  • the high-frequency amplifying integrated-circuit device 91 of this embodiment has a gain of approximately 7 dB at the frequency of 10 GHz.
  • a comparison of Fig. 4 with Fig. 7 shows that the high-frequency amplifying integrated-circuit device 91 of this embodiment of the invention is superior to the prior art device in the following two points.
  • connection electrode 13s can be grounded from a point of view of direct current.
  • the connection electrode 13s since the connection electrode 13s is relatively long, the distance between the grounded connection electrode 13s and the first source electrode 13a becomes long, and the connection electrode comes to operate pseudomorphically as an inductor at a high frequency region.
  • the high-frequency amplifying integrated-circuit device 92 becomes likely to receive the influence of the changes in the inductance values of the bonding wires 61 to 66. Therefore, there may be a case where parasitic oscillation occurs in the high-frequency amplifying integrated-circuit device 92, making it impossible to perform a stable amplifying operation.
  • the connection electrode 13s it is possible to improve the grounding of the connection electrode 13s by grounding both the first source electrode 13a and the third source electrode 13c by using the two capacitors 31 and 32, and the connection electrode 13s can be made not to operate as an inductor even at a high frequency region. Therefore, even if the lengths L of the bonding wires 61 to 66 are varied, it is possible to cause the high-frequency amplifying integrated-circuit device 91 to perform a stable amplifying operation free from parasitic oscillation.
  • the grounding conductor 81 and the grounding conductor 82 are formed electrically separate on the semiconductor substrate 10 and are connected to each other only on the mother board 100. Therefore, the first source electrode 13a is grounded via a series resonance circuit formed of the capacitor 32 and the bonding wire 62, and the third source electrode 13c is grounded via a series resonance circuit formed of the capacitor 31 and the bonding wire 65.
  • the high-frequency amplifying integrated-circuit device 91 performs a stable amplifying operation free from parasitic oscillation.
  • the electrostatic capacitance values of the two capacitors 31 and 32 at mutually different values, it is possible to vary the resonance frequency of the series resonance circuit formed of the capacitor 31 and the bonding wire 65 from the resonance frequency of the series resonance circuit formed of the capacitor 32 and the bonding wire 62, and it is possible to relatively decrease the impedance when the grounding conductors 103 and 104 are seen from the source electrode 13 of the field-effect transistor 1 over a wide frequency range.
  • the frequency range where the high-frequency amplifying integrated-circuit device 91 can be made to stably perform an amplifying operation can be made wider than a case in which the electrostatic capacitance values of the two capacitors 31 and 32 are set at the same value.
  • the high-frequency amplifying integrated-circuit device 91 of this embodiment since the output end reflection coefficient can be decreased to be less than that of the prior art, the high-frequency amplifying integrated-circuit device 91 can be made to perform a stable amplifying operation free from parasitic oscillation.
  • the high-frequency amplifying integrated-circuit device 91 of this embodiment since the amount of change of the gain with respect to variations in the lengths L of the bonding wires 61 to 66 can be decreased to be less than that in the prior art, the variations of the gain during manufacture can be decreased, and the high-frequency amplifying integrated-circuit device 91 can be manufactured with a high yield.
  • the high-frequency amplifying integrated-circuit device 91 of this embodiment since the amount of change of the output end reflection coefficient with respect to variations in the lengths L of the bonding wires 61 to 66 can be decreased to be less than that in the prior art, the variations of the gain during manufacture can be decreased, and the high-frequency amplifying integrated-circuit device 91 can be manufactured with a high yield.
  • the amount of change of the output end reflection coefficient with respect to variations in the lengths L of the bonding wires 61 to 66 can be decreased to be less than that in the prior art.
  • the high-frequency amplifying integrated-circuit device 91 can be manufactured with a high yield as described above, it can be manufactured at a low cost.
  • the section between the grounding conductor 82 and the grounding conductor 104, and the section between the grounding conductor 81 and the grounding conductor 103 are connected by using bonding wires.
  • the present invention is not limited to this example, and it is also possible to provide through holes in those portions of the semiconductor substrate 10 where the grounding conductors 81 and 82 are formed, and to connect to the grounding conductors formed on the bottom surface of the semiconductor substrate 10 by using electrodes formed in such through holes.
  • the present invention is not limited to this example, and other transistors, such as high electron mobility transistors (HEMTs) or bipolar transistors may be used.
  • HEMTs high electron mobility transistors
  • bipolar transistors may be used.
  • the high-frequency amplifying integrated-circuit device described herein since at least two first electrodes are each grounded via a capacitor, the grounding of the first electrodes at a high frequency can be improved, and the high-frequency amplifying integrated-circuit device can be made to perform a stable amplifying operation free from parasitic oscillation.
  • grounding conductors are connected to each other outside the semiconductor substrate in the high-frequency amplifying integrated-circuit device can be made to perform a stable amplifying operation free from parasitic oscillation as compared with a case in which the grounding conductors are connected on the semiconductor substrate.
  • the grounding of the first electrodes at a high frequency can be improved, so the high-frequency amplifying integrated-circuit device can be made to perform a stable amplifying operation free from parasitic oscillation, and the construction thereof can be simplified, as compared to a case in which two or more first electrodes are grounded each via a capacitor.
  • the frequency range where the high-frequency amplifying integrated-circuit device stably performs an amplifying operation can be widened, as compared to a case in which the electrostatic capacitance values of the two capacitors are set at the same value.
  • the high-frequency amplifying integrated-circuit device can be made to perform an amplifying operation more stably than a case in which the electrostatic capacitance value of one of the capacitors is set at a value out of the range of 3 to 50 times as great as the electrostatic capacitance value of the other capacitor.
  • the high-frequency amplifying integrated-circuit device is provided on another substrate, with each terminal-to-terminal space being connected by wire bonding. Therefore, variations in the gain and the output end reflection coefficient, which variations correspond to the variations in the lengths of the bonding wires, can be reduced. As a result, since variations during manufacturing can be reduced more than in the prior art, and the manufacturing yield can be improved, the high-frequency amplifying integrated-circuit device can be manufactured at a low cost.

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  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Microwave Amplifiers (AREA)
EP96117193A 1995-10-26 1996-10-25 Monolithische integrierte Schaltungsanordnung mit hochfrequenter Verstärkerschaltung Ceased EP0771032A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP278744/95 1995-10-26
JP7278744A JPH09121127A (ja) 1995-10-26 1995-10-26 高周波増幅集積回路装置

Publications (2)

Publication Number Publication Date
EP0771032A2 true EP0771032A2 (de) 1997-05-02
EP0771032A3 EP0771032A3 (de) 1997-08-27

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EP96117193A Ceased EP0771032A3 (de) 1995-10-26 1996-10-25 Monolithische integrierte Schaltungsanordnung mit hochfrequenter Verstärkerschaltung

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US (1) US5874859A (de)
EP (1) EP0771032A3 (de)
JP (1) JPH09121127A (de)
KR (1) KR100228754B1 (de)
CA (1) CA2188962C (de)

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US6309245B1 (en) 2000-12-18 2001-10-30 Powerwave Technologies, Inc. RF amplifier assembly with reliable RF pallet ground
US6549077B1 (en) * 2002-02-20 2003-04-15 United Microelectronics Corp. Integrated inductor for RF transistor
JP2009159059A (ja) * 2007-12-25 2009-07-16 Samsung Electro Mech Co Ltd 高周波スイッチ回路
RU2400011C1 (ru) * 2009-06-01 2010-09-20 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Перестраиваемый усилитель свч
US9806159B2 (en) * 2015-10-08 2017-10-31 Macom Technology Solutions Holdings, Inc. Tuned semiconductor amplifier
JP7103064B2 (ja) * 2018-08-28 2022-07-20 富士通株式会社 増幅装置及び無線通信装置
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US5874859A (en) 1999-02-23
CA2188962C (en) 1999-09-14
KR100228754B1 (ko) 1999-11-01
EP0771032A3 (de) 1997-08-27
KR970024027A (ko) 1997-05-30
CA2188962A1 (en) 1997-04-27
JPH09121127A (ja) 1997-05-06

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