EP0852809A4 - Metall-schicht-stapel mit zwei dünnen titan-lagen für integrierte schaltung und zugehörige kammerabscheidung - Google Patents

Metall-schicht-stapel mit zwei dünnen titan-lagen für integrierte schaltung und zugehörige kammerabscheidung

Info

Publication number: EP0852809A4
Authority: EP; European Patent Office
Prior art keywords: integrated circuit; metal layer; layer stack; thin titanium; titanium layers
Prior art date: 1995-09-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

EP96933891A

Other languages

English (en)

French (fr)

Other versions

EP0852809A1 (de

Inventor

Rajiv Rastogi

Peng Bai

Sohail Ahmed

William K Meyer

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Intel Corp

Original Assignee

Intel Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-09-29

Filing date

1996-09-25

Publication date

1999-09-15

1996-09-25 Application filed by Intel Corp filed Critical Intel Corp

1998-07-15 Publication of EP0852809A1 publication Critical patent/EP0852809A1/de

1999-09-15 Publication of EP0852809A4 publication Critical patent/EP0852809A4/de

Status Withdrawn legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/425—Barrier, adhesion or liner layers

EP96933891A 1995-09-29 1996-09-25 Metall-schicht-stapel mit zwei dünnen titan-lagen für integrierte schaltung und zugehörige kammerabscheidung Withdrawn EP0852809A4 (de)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US53615595A	1995-09-29	1995-09-29
US536155		1995-09-29
PCT/US1996/015351 WO1997012399A1 (en)	1995-09-29	1996-09-25	Metal stack for integrated circuit having two thin layers of titanium with dedicated chamber depositions

Publications (2)

Publication Number	Publication Date
EP0852809A1 EP0852809A1 (de)	1998-07-15
EP0852809A4 true EP0852809A4 (de)	1999-09-15

Family

ID=24137384

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP96933891A Withdrawn EP0852809A4 (de)	1995-09-29	1996-09-25	Metall-schicht-stapel mit zwei dünnen titan-lagen für integrierte schaltung und zugehörige kammerabscheidung

Country Status (7)

Country	Link
EP (1)	EP0852809A4 (de)
JP (1)	JPH11511593A (de)
KR (1)	KR19990063767A (de)
CN (1)	CN1198252A (de)
AU (1)	AU7245396A (de)
IL (1)	IL123751A0 (de)
WO (1)	WO1997012399A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE19903195B4 (de)	1999-01-27	2005-05-19	Infineon Technologies Ag	Verfahren zur Verbesserung der Qualität von Metalleitbahnen auf Halbleiterstrukturen
US6492281B1 (en) *	2000-09-22	2002-12-10	Advanced Micro Devices, Inc.	Method of fabricating conductor structures with metal comb bridging avoidance
DE10053915C2 (de) *	2000-10-31	2002-11-14	Infineon Technologies Ag	Herstellungsverfahren für eine integrierte Schaltung
CN1324675C (zh) *	2003-04-02	2007-07-04	旺宏电子股份有限公司	防止微影工艺对准失误的结构与方法
CN1316613C (zh) *	2003-06-19	2007-05-16	旺宏电子股份有限公司	半导体的三明治抗反射结构金属层及其制程
KR100650904B1 (ko) *	2005-12-29	2006-11-28	동부일렉트로닉스 주식회사	알루미늄 배선 형성 방법
CN104221130B (zh)	2012-02-24	2018-04-24	天工方案公司	与化合物半导体的铜互连相关的改善的结构、装置和方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5231053A (en) *	1990-12-27	1993-07-27	Intel Corporation	Process of forming a tri-layer titanium coating for an aluminum layer of a semiconductor device
EP0561132A1 (de) *	1992-02-26	1993-09-22	International Business Machines Corporation	Mit feuerfestem Metall aus PVD und CVD bedeckte Metalleiterbahnen und Durchgangsleitungen niedrigen Widerstandes
US5470790A (en) *	1994-10-17	1995-11-28	Intel Corporation	Via hole profile and method of fabrication
EP0721216A2 (de) *	1995-01-03	1996-07-10	International Business Machines Corporation	Weicher Metallleiter und Herstellungsverfahren
WO1997012391A1 (en) *	1995-09-29	1997-04-03	Intel Corporation	Improved interface between titanium and aluminum-alloy in metal stack for integrated circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4673623A (en) *	1985-05-06	1987-06-16	The Board Of Trustees Of The Leland Stanford Junior University	Layered and homogeneous films of aluminum and aluminum/silicon with titanium and tungsten for multilevel interconnects

1996
- 1996-09-25 IL IL12375196A patent/IL123751A0/xx unknown
- 1996-09-25 JP JP9512195A patent/JPH11511593A/ja active Pending
- 1996-09-25 KR KR1019980702234A patent/KR19990063767A/ko not_active Ceased
- 1996-09-25 WO PCT/US1996/015351 patent/WO1997012399A1/en not_active Ceased
- 1996-09-25 EP EP96933891A patent/EP0852809A4/de not_active Withdrawn
- 1996-09-25 CN CN96197259A patent/CN1198252A/zh active Pending
- 1996-09-25 AU AU72453/96A patent/AU7245396A/en not_active Abandoned

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5231053A (en) *	1990-12-27	1993-07-27	Intel Corporation	Process of forming a tri-layer titanium coating for an aluminum layer of a semiconductor device
EP0561132A1 (de) *	1992-02-26	1993-09-22	International Business Machines Corporation	Mit feuerfestem Metall aus PVD und CVD bedeckte Metalleiterbahnen und Durchgangsleitungen niedrigen Widerstandes
US5470790A (en) *	1994-10-17	1995-11-28	Intel Corporation	Via hole profile and method of fabrication
EP0721216A2 (de) *	1995-01-03	1996-07-10	International Business Machines Corporation	Weicher Metallleiter und Herstellungsverfahren
WO1997012391A1 (en) *	1995-09-29	1997-04-03	Intel Corporation	Improved interface between titanium and aluminum-alloy in metal stack for integrated circuit

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
FINETTI M ET AL: "CORRELATION BETWEEN RESISTANCE BEHAVIOR AND MASS TRANSPORT IN AL -SI/TI MULTILAYER INTERCONNECTS", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART A, vol. 5, no. 5, SEC. SERIES, 1 September 1987 (1987-09-01), pages 2854 - 2858, XP000005455, ISSN: 0734-2101 *
GARDNER D S ET AL: "HOMOGENEOUS AND LAYERED FILMS OF ALUMINUM/SILICON WITH TITANIUM FORMULTILEVEL INTERCONNECTS", PROCEEDINGS OF THE INTERNATIONAL VLSI MULTILEVEL INTERCONNECTION CONFERENCE, SANTA CLARA, 25 - 26 JUNE, 1985, no. CONF. 2, 25 June 1985 (1985-06-25), INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 102 - 113, XP000010251 *
See also references of WO9712399A1 *
SHEN B W ET AL: "AN EVALUATION OF TITANIUM INTERLAYERED ALUMINUM FILMS FOR VLSI METALLIZATION", PROCEEDINGS OF THE INTERNATIONAL VLSI MULTILEVEL INTERCONNECTION CONFERENCE, SANTA CLARA, 25 - 26 JUNE, 1985, no. CONF. 2, 25 June 1985 (1985-06-25), INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 114 - 120, XP000010250 *

Also Published As

Publication number	Publication date
JPH11511593A (ja)	1999-10-05
KR19990063767A (ko)	1999-07-26
EP0852809A1 (de)	1998-07-15
CN1198252A (zh)	1998-11-04
WO1997012399A1 (en)	1997-04-03
AU7245396A (en)	1997-04-17
IL123751A0 (en)	1998-10-30

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Legal Events

Date	Code	Title	Description
1998-05-29	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
1998-07-15	17P	Request for examination filed	Effective date: 19980428
1998-07-15	AK	Designated contracting states	Kind code of ref document: A1 Designated state(s): DE FR GB IE IT
1999-09-15	A4	Supplementary search report drawn up and despatched	Effective date: 19990729
1999-09-15	AK	Designated contracting states	Kind code of ref document: A4 Designated state(s): DE FR GB IE IT
1999-09-15	RIC1	Information provided on ipc code assigned before grant	Free format text: 6H 01L 23/495 A, 6H 01L 23/48 B, 6H 01L 23/52 B, 6H 01L 29/40 B, 6H 01L 23/532 B
2001-08-24	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN
2001-10-10	18D	Application deemed to be withdrawn	Effective date: 20010403
2006-05-12	REG	Reference to a national code	Ref country code: HK Ref legal event code: WD Ref document number: 1015528 Country of ref document: HK