IL123751A0 - Metal stack for integrated circuit having two thin layers of titanium with dedicated chamber depositions - Google Patents

Metal stack for integrated circuit having two thin layers of titanium with dedicated chamber depositions

Info

Publication number
IL123751A0
IL123751A0 IL12375196A IL12375196A IL123751A0 IL 123751 A0 IL123751 A0 IL 123751A0 IL 12375196 A IL12375196 A IL 12375196A IL 12375196 A IL12375196 A IL 12375196A IL 123751 A0 IL123751 A0 IL 123751A0
Authority
IL
Israel
Prior art keywords
depositions
titanium
integrated circuit
thin layers
metal stack
Prior art date
Application number
IL12375196A
Other languages
English (en)
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of IL123751A0 publication Critical patent/IL123751A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
IL12375196A 1995-09-29 1996-09-25 Metal stack for integrated circuit having two thin layers of titanium with dedicated chamber depositions IL123751A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53615595A 1995-09-29 1995-09-29
PCT/US1996/015351 WO1997012399A1 (en) 1995-09-29 1996-09-25 Metal stack for integrated circuit having two thin layers of titanium with dedicated chamber depositions

Publications (1)

Publication Number Publication Date
IL123751A0 true IL123751A0 (en) 1998-10-30

Family

ID=24137384

Family Applications (1)

Application Number Title Priority Date Filing Date
IL12375196A IL123751A0 (en) 1995-09-29 1996-09-25 Metal stack for integrated circuit having two thin layers of titanium with dedicated chamber depositions

Country Status (7)

Country Link
EP (1) EP0852809A4 (de)
JP (1) JPH11511593A (de)
KR (1) KR19990063767A (de)
CN (1) CN1198252A (de)
AU (1) AU7245396A (de)
IL (1) IL123751A0 (de)
WO (1) WO1997012399A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19903195B4 (de) 1999-01-27 2005-05-19 Infineon Technologies Ag Verfahren zur Verbesserung der Qualität von Metalleitbahnen auf Halbleiterstrukturen
US6492281B1 (en) * 2000-09-22 2002-12-10 Advanced Micro Devices, Inc. Method of fabricating conductor structures with metal comb bridging avoidance
DE10053915C2 (de) * 2000-10-31 2002-11-14 Infineon Technologies Ag Herstellungsverfahren für eine integrierte Schaltung
CN1324675C (zh) * 2003-04-02 2007-07-04 旺宏电子股份有限公司 防止微影工艺对准失误的结构与方法
CN1316613C (zh) * 2003-06-19 2007-05-16 旺宏电子股份有限公司 半导体的三明治抗反射结构金属层及其制程
KR100650904B1 (ko) * 2005-12-29 2006-11-28 동부일렉트로닉스 주식회사 알루미늄 배선 형성 방법
CN104221130B (zh) 2012-02-24 2018-04-24 天工方案公司 与化合物半导体的铜互连相关的改善的结构、装置和方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4673623A (en) * 1985-05-06 1987-06-16 The Board Of Trustees Of The Leland Stanford Junior University Layered and homogeneous films of aluminum and aluminum/silicon with titanium and tungsten for multilevel interconnects
US5231053A (en) * 1990-12-27 1993-07-27 Intel Corporation Process of forming a tri-layer titanium coating for an aluminum layer of a semiconductor device
US5300813A (en) * 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
US5470790A (en) * 1994-10-17 1995-11-28 Intel Corporation Via hole profile and method of fabrication
US6285082B1 (en) * 1995-01-03 2001-09-04 International Business Machines Corporation Soft metal conductor
US5747879A (en) * 1995-09-29 1998-05-05 Intel Corporation Interface between titanium and aluminum-alloy in metal stack for integrated circuit

Also Published As

Publication number Publication date
JPH11511593A (ja) 1999-10-05
KR19990063767A (ko) 1999-07-26
EP0852809A1 (de) 1998-07-15
CN1198252A (zh) 1998-11-04
WO1997012399A1 (en) 1997-04-03
AU7245396A (en) 1997-04-17
EP0852809A4 (de) 1999-09-15

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