EP2158609A4 - Semi-conducteurs à oxyde et transistors à couche mince comprenant ces mêmes - Google Patents
Semi-conducteurs à oxyde et transistors à couche mince comprenant ces mêmesInfo
- Publication number
- EP2158609A4 EP2158609A4 EP08766431A EP08766431A EP2158609A4 EP 2158609 A4 EP2158609 A4 EP 2158609A4 EP 08766431 A EP08766431 A EP 08766431A EP 08766431 A EP08766431 A EP 08766431A EP 2158609 A4 EP2158609 A4 EP 2158609A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- same
- thin film
- film transistors
- oxide semiconductors
- semiconductors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070060053A KR20080111736A (ko) | 2007-06-19 | 2007-06-19 | 산화물 반도체 및 이를 포함하는 박막 트랜지스터 |
| KR1020070126376A KR101468590B1 (ko) | 2007-12-06 | 2007-12-06 | 산화물 반도체 및 이를 포함하는 박막 트랜지스터 |
| PCT/KR2008/003470 WO2008156311A1 (fr) | 2007-06-19 | 2008-06-19 | Semi-conducteurs à oxyde et transistors à couche mince comprenant ces mêmes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP2158609A1 EP2158609A1 (fr) | 2010-03-03 |
| EP2158609A4 true EP2158609A4 (fr) | 2010-07-14 |
Family
ID=40135528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP08766431A Ceased EP2158609A4 (fr) | 2007-06-19 | 2008-06-19 | Semi-conducteurs à oxyde et transistors à couche mince comprenant ces mêmes |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7935964B2 (fr) |
| EP (1) | EP2158609A4 (fr) |
| JP (1) | JP5526023B2 (fr) |
| CN (1) | CN101681933B (fr) |
| WO (1) | WO2008156311A1 (fr) |
Families Citing this family (91)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100785038B1 (ko) * | 2006-04-17 | 2007-12-12 | 삼성전자주식회사 | 비정질 ＺｎＯ계 ＴＦＴ |
| KR101509663B1 (ko) | 2007-02-16 | 2015-04-06 | 삼성전자주식회사 | 산화물 반도체층 형성 방법 및 이를 이용한 반도체 소자제조방법 |
| KR101334181B1 (ko) * | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
| US7935964B2 (en) * | 2007-06-19 | 2011-05-03 | Samsung Electronics Co., Ltd. | Oxide semiconductors and thin film transistors comprising the same |
| CN101681925B (zh) | 2007-06-19 | 2011-11-30 | 三星电子株式会社 | 氧化物半导体及包含该氧化物半导体的薄膜晶体管 |
| KR101496148B1 (ko) * | 2008-05-15 | 2015-02-27 | 삼성전자주식회사 | 반도체소자 및 그 제조방법 |
| KR101468591B1 (ko) * | 2008-05-29 | 2014-12-04 | 삼성전자주식회사 | 산화물 반도체 및 이를 포함하는 박막 트랜지스터 |
| US9082857B2 (en) | 2008-09-01 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor layer |
| CN101719493B (zh) | 2008-10-08 | 2014-05-14 | 株式会社半导体能源研究所 | 显示装置 |
| JP5361651B2 (ja) | 2008-10-22 | 2013-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR101667909B1 (ko) | 2008-10-24 | 2016-10-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조방법 |
| JP5616012B2 (ja) * | 2008-10-24 | 2014-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8741702B2 (en) * | 2008-10-24 | 2014-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| EP2180518B1 (fr) | 2008-10-24 | 2018-04-25 | Semiconductor Energy Laboratory Co, Ltd. | Procédé de fabrication d'un dispositif semi-conducteur |
| JP2010123595A (ja) * | 2008-11-17 | 2010-06-03 | Sony Corp | 薄膜トランジスタおよび表示装置 |
| US8704216B2 (en) * | 2009-02-27 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5504008B2 (ja) | 2009-03-06 | 2014-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR101600051B1 (ko) * | 2009-03-23 | 2016-03-07 | 삼성전자주식회사 | 산화물 반도체 및 이를 포함하는 박막 트랜지스터 |
| US8378342B2 (en) * | 2009-03-23 | 2013-02-19 | Samsung Electronics Co., Ltd. | Oxide semiconductor and thin film transistor including the same |
| JP5564331B2 (ja) | 2009-05-29 | 2014-07-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR20100135544A (ko) * | 2009-06-17 | 2010-12-27 | 삼성전자주식회사 | 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자 |
| KR101782176B1 (ko) | 2009-07-18 | 2017-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
| CN103151387A (zh) * | 2009-09-04 | 2013-06-12 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| KR101470811B1 (ko) * | 2009-09-16 | 2014-12-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| EP3540772A1 (fr) | 2009-09-16 | 2019-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Transistor et afficheur |
| WO2011037050A1 (fr) * | 2009-09-24 | 2011-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif semi-conducteur et son procédé de fabrication |
| KR101914026B1 (ko) | 2009-09-24 | 2018-11-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
| WO2011043203A1 (fr) | 2009-10-08 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif semi-conducteur, dispositif d'affichage et appareil électronique |
| KR101376461B1 (ko) | 2009-10-08 | 2014-03-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체층 및 반도체 장치 |
| WO2011043170A1 (fr) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif à semi-conducteur et procédé de fabrication associé |
| KR101680047B1 (ko) * | 2009-10-14 | 2016-11-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| WO2011046025A1 (fr) * | 2009-10-16 | 2011-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Circuit logique et dispositif à semi-conducteur |
| CN106057819B (zh) | 2009-10-30 | 2019-03-15 | 株式会社半导体能源研究所 | 半导体装置 |
| KR20190066086A (ko) | 2009-11-06 | 2019-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| WO2011055631A1 (fr) | 2009-11-06 | 2011-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif a semiconducteur et son procede de production |
| KR101638977B1 (ko) * | 2009-11-13 | 2016-07-12 | 삼성전자주식회사 | 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자 |
| KR102393447B1 (ko) | 2009-11-13 | 2022-05-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| CN105206514B (zh) * | 2009-11-28 | 2018-04-10 | 株式会社半导体能源研究所 | 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法 |
| KR102089200B1 (ko) * | 2009-11-28 | 2020-03-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| WO2011065244A1 (fr) | 2009-11-28 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif semi-conducteur et procédé de fabrication de celui-ci |
| WO2011065210A1 (fr) | 2009-11-28 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Matériau d'oxyde empilé, dispositif à semi-conducteurs et procédé pour fabriquer le dispositif à semi-conducteurs |
| EP2507787A4 (fr) * | 2009-11-30 | 2013-07-17 | Semiconductor Energy Lab | Dispositif d'affichage à cristaux liquides, son procédé de commande, dispositif électronique le comprenant |
| KR101623961B1 (ko) * | 2009-12-02 | 2016-05-26 | 삼성전자주식회사 | 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자 |
| KR101943109B1 (ko) * | 2009-12-04 | 2019-01-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| CN103746001B (zh) | 2009-12-04 | 2017-05-03 | 株式会社半导体能源研究所 | 显示装置 |
| KR101035357B1 (ko) * | 2009-12-15 | 2011-05-20 | 삼성모바일디스플레이주식회사 | 산화물 반도체 박막 트랜지스터, 그 제조방법 및 산화물 반도체 박막 트랜지스터를 구비한 유기전계 발광소자 |
| KR101097322B1 (ko) * | 2009-12-15 | 2011-12-23 | 삼성모바일디스플레이주식회사 | 산화물 반도체 박막 트랜지스터, 그 제조방법 및 산화물 반도체 박막 트랜지스터를 구비한 유기전계 발광소자 |
| WO2011081009A1 (fr) | 2009-12-28 | 2011-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Procédé de fabrication d'un dispositif semi-conducteur |
| KR101299256B1 (ko) * | 2010-01-29 | 2013-08-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 |
| WO2011108346A1 (fr) * | 2010-03-05 | 2011-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Procédé de production de film d'oxyde semi-conducteur et procédé de production de transistor |
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| EP2571875A4 (fr) | 2010-05-14 | 2013-10-30 | Dana Farber Cancer Inst Inc | Compositions contraceptives pour les hommes et procédés d'utilisation associés |
| US8629438B2 (en) | 2010-05-21 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
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| JP5969745B2 (ja) * | 2010-09-10 | 2016-08-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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| KR102001577B1 (ko) | 2010-12-17 | 2019-07-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 재료 및 반도체 장치 |
| KR101981808B1 (ko) | 2010-12-28 | 2019-08-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| JP5975635B2 (ja) | 2010-12-28 | 2016-08-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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| DE112012007295B3 (de) | 2011-06-08 | 2022-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Verfahren zum Herstellen eines Sputtertargets und Verfahren zum Herstellen einer Halbleitervorrichtung |
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| KR102932705B1 (ko) * | 2012-04-13 | 2026-02-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
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| TWI681233B (zh) | 2012-10-12 | 2020-01-01 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置、觸控面板及液晶顯示裝置的製造方法 |
| JP6351947B2 (ja) | 2012-10-12 | 2018-07-04 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| WO2014073585A1 (fr) | 2012-11-08 | 2014-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Film d'oxyde métallique et procédé de formation d'un film d'oxyde métallique |
| KR102370069B1 (ko) * | 2012-12-25 | 2022-03-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| TWI614813B (zh) * | 2013-01-21 | 2018-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
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| TWI652822B (zh) | 2013-06-19 | 2019-03-01 | 日商半導體能源研究所股份有限公司 | 氧化物半導體膜及其形成方法 |
| TWI608523B (zh) | 2013-07-19 | 2017-12-11 | 半導體能源研究所股份有限公司 | Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device |
| TWI636309B (zh) * | 2013-07-25 | 2018-09-21 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置及電子裝置 |
| WO2015132697A1 (fr) | 2014-03-07 | 2015-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif à semi-conducteur |
| KR102180242B1 (ko) * | 2019-02-19 | 2020-11-18 | 한양대학교 산학협력단 | 고유전율 트랜지스터 및 그 제조방법 |
| CN111312733B (zh) * | 2020-04-02 | 2023-06-02 | 武汉华星光电半导体显示技术有限公司 | 阵列基板及其制备方法 |
| KR20240078142A (ko) * | 2022-11-25 | 2024-06-03 | 삼성전자주식회사 | 결정질 InZnO 산화물 반도체 및 그 형성방법과, 결정질 InZnO 산화물 반도체 를 포함하는 반도체 소자 |
| WO2024252280A1 (fr) * | 2023-06-05 | 2024-12-12 | Zinite Corporation | Empilement de canaux à semi-conducteur à oxyde |
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- 2008-06-19 WO PCT/KR2008/003470 patent/WO2008156311A1/fr not_active Ceased
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Also Published As
| Publication number | Publication date |
|---|---|
| US20080315200A1 (en) | 2008-12-25 |
| US7935964B2 (en) | 2011-05-03 |
| CN101681933A (zh) | 2010-03-24 |
| WO2008156311A1 (fr) | 2008-12-24 |
| EP2158609A1 (fr) | 2010-03-03 |
| JP5526023B2 (ja) | 2014-06-18 |
| CN101681933B (zh) | 2012-05-30 |
| JP2010531059A (ja) | 2010-09-16 |
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