Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
  • H10N70/20—Multistable switching devices, e.g. memristors
  • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
  • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
  • H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
  • H10N70/20—Multistable switching devices, e.g. memristors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
  • H10N70/801—Constructional details of multistable switching devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
  • H10N70/801—Constructional details of multistable switching devices
  • H10N70/881—Switching materials

Definitions

• TITLE ASSEMBLY COMPRISING AT LEAST TWO SELECTORS AND TWO NON-VOLATILE RESISTIVE MEMORIES, MATRIX AND ASSOCIATED MANUFACTURING METHOD
• the technical field of the invention is that of non-volatile resistive memories. It also relates to the manufacture of such memories.
• crossbar memory arrays, in which a plurality of memory points are each located at the intersection between a conductive line and a conductive column. Each memory point is then addressed, for example by applying a voltage between the conductive line and the conductive column to which it is connected.
• the invention relates more particularly to memory points comprising a resistive memory, that is to say a memory in which the information is stored in the form of an electrical resistance value.
• a resistive memory can be of different types, depending on the phenomena implemented to write, store and read the information.
• Resistive memories are typically produced in layers located above a substrate (for example a silicon substrate) on which the matrix is produced.
• a substrate for example a silicon substrate
• BEOL Back-End-Of-Line
• FEOL Front-End-Of-Line
• the components belonging to the BEOL are for example integrated between the metallic interconnection levels.
• FEOL components are fabricated on the surface of the substrate (diodes and CMOS transistors for example).
• phase change memory for “Phase Change Random Access Memory” in English implements the strong contrast of electronic properties between an amorphous phase and a crystalline phase of a material.
• OxRAM oxide reversible breakdown memory
• a so-called magnetic memory or MRAM for "Magnetic RAM” in English implements the relative magnetization between a reference magnetic layer and a programmable magnetic layer.
• resistive memories proves to be a promising solution for increasing the density of memory arrays. They are also part of the development of new applications such as so-called “neuromorphic” computing or the development of a new class of memories called “Storage Class Memory”. However, resistive memories can have various drawbacks.
• a plurality of resistive memories are connected to the same row or the same column.
• the application of an addressing voltage to the terminals of one of these memories (for example to read it) however creates a non-negligible leakage current at the level of the other memories of the same line, and of the same column. This leakage current degrades the ability to read and/or write information at the level of one of the memories.
• An ovonic threshold switch or OTS for "Ovonic Threshold Switching" in English implements a characteristic property of certain chalcogenide materials. This is the transition, under the effect of an electric field, from a resistive state to a metastable conductive state.
• the metastable conductive state can be maintained as long as a holding current flows through the OTS selector. Apart from this, the OTS selector returns to the resistive state (blocked state).
• An unstable conductive bridge selector or TS for "Threshold Switch” in English implements the formation of a metastable metal filament by the diffusion, under the effect of an electric field, of an active electrode in an electrolyte. When the field is no longer applied, the metastable metal filament dissolves.
• a metal-insulator transition selector uses a material with a strong electronic correlation requiring the application of an electric field exceeding a threshold field to create an electric current, the threshold field being a function of the Coulomb repulsion forcing the localization free electrons of said material.
• a Schottky barrier selector or tunnel barrier implements a strong non-linearity in its current-voltage characteristic to obtain the desired "selection" effect.
• a memory point comprising a back-end selector offers reduced bulk and is easy to manufacture (it can be engraved at the same time as the resistive memory part of the memory point). However, the good functionality of the assembly depends in particular on the match between the electrical properties of the selector and the memory.
• the invention relates to an assembly comprising at least two selectors arranged electrically in parallel with each other and each being electrically connected in series to a memory layer forming at least two separate non-volatile resistive memories each associated, respectively, with one of the two selectors, the assembly comprising: a first planar stack, comprising: a first active layer which extends parallel to a given horizontal plane, the first active layer being said memory layer; and a first upper electrode and a second upper electrode which both extend over the first active layer and which are electrically insulated from each other, the first upper electrode being laterally bounded by a side surface, the second upper electrode being bounded laterally by another side surface, an insulating layer extending between a part of the side surface of the first upper electrode and a part of the side surface of the second upper electrode to electrically insulate the first upper electrode from the second electrode superior; a second stack, which extends obliquely or perpendicular to said plane, comprising a second active layer, at least part of the second active layer
• Each upper electrode is electrically connected to a conduction region of the first active layer, that is to say of the memory layer of the assembly.
• conduction region or conduction channel is meant a portion of active layer where the resistivity can vary according to an applied voltage or a current flowing therein. This is in particular a portion where the creation/destruction of a conductive structure such as a conduction filament is favored.
• the first and second upper electrodes being separated from each other, they are therefore connected to conduction regions which are also separated from each other.
• the first active layer comprises two distinct conduction regions, operable independently.
• the assembly according to the invention therefore comprises two selector/memory assemblies 1 S1 R, independently addressable and making it possible to store two distinct pieces of information in a non-volatile manner.
• the set is of type nSnR where n is at least equal to two.
• the dimensions of the first memory depend in part on the surface of the first upper electrode extending over the first active layer.
• the dimensions of the second memory depend in part on the (planar) surface of the second upper electrode extending over the first active layer. It is so possible, to adjust the dimensions of the first and second memories independently, by adjusting the planar surfaces of the first and second upper electrodes extending over the first active layer.
• the first upper electrode is also electrically connected, via its first side surface, to a conduction region of the second active layer.
• the conduction region of the second active layer therefore forms a first selector.
• the vertical dimensions of the first selector depend in part on the surface of the first upper electrode in contact with the second active layer. It is for example proportional to a thickness of the first upper electrode. The greater said thickness, the greater the dimensions of the first selector. It is thus possible to adjust the dimensions of the first selector by adjusting the thickness of the first electrode.
• the thickness of the first upper electrode on the one hand, and its arrangement (in particular its extent) on the first active layer on the other hand, are adjustable independently of each other (otherwise formulated, the thickness of this electrode is adjustable independently of the - lateral - dimensions of the conduction zone corresponding to the first resistive memory).
• the dimensions of the first selector and of the first memory can therefore be adjusted independently.
• the electrical properties of the first memory and of the first selector depend in part on their dimensions. Indeed, the current passing through the memory depends in part on the extent of the memory. Moreover, for PCRAM type memories, for example, the programming current is proportional to the surface of the electrode against which it extends. In the same way, the threshold current of the selector also partly depends on its dimensions. And, for an OTS-type selector, the holding current can be reduced by reducing the dimensions of the selector, in particular when these are less than a critical dimension of the order of 80 nm.
• the leakage currents of an MIEC type selector also depend in part on the size of the electrode against which the selector extends.
• the electrical properties of the first memory, and those of the first selector can be adjusted independently, in this particular architecture, due to the fact that the surfaces (or effective surfaces) of these elements can be adjusted independently of one of the other.
• the same reasoning applies to a conduction region of the third active layer, forming a second selector.
• the electrical properties of the second selector and of the second memory can be adjusted, each independently, by adjusting a thickness of the second upper electrode and its arrangement on the first active layer.
• this particular geometric arrangement makes it possible, surprisingly, to obtain effective surfaces (typically, overlapping surfaces, between electrodes or electrical contacts) which may be less than a minimum surface accessible at first sight for a fineness of etching F, ie less than F 2 .
• the surface of the selector which is opposite the upper electrode considered embraces part of the periphery of this upper electrode. . This surface is therefore equal to the length of the selector/electrode portion in contact by the thickness of the electrode.
• each memory can also have a reduced area, also less than F 2 .
• F 2 the manufacture of a memory according to the prior art, that is to say aligned in the plane, is limited by the fineness of engraving F.
• the smallest surface of a memory according to the fabricable prior art is therefore greater than or equal to F 2 .
• the surface S of the memory is also equal to:
• the effective surface of the memory can be made even smaller by a lateral offset between the upper electrode and the lower electrode.
• the memories for example of the OxRAM type, advantageously benefit from this reduction in area. Indeed, they can show a higher resistance in the high state as its surface is reduced. Modifying the resistance to the high state of the memory (so as to increase it) makes it possible in particular to increase the read window of the selector/memory assembly.
• the assembly according to the invention may have one or more additional characteristics from among the following, considered individually or according to all technically possible combinations: the assembly comprises a lower electrode, which extends under the first active layer, parallel thereto, and which is in electrical contact with a lower face of the first active layer; at least part of the first upper electrode is located directly above the lower electrode, overlapping the lower electrode, in projection in a direction perpendicular to said plane; at least part of the second upper electrode is located directly above the lower electrode, overlapping the lower electrode, in projection in a direction perpendicular to said plane; at least one of the upper electrodes overlaps only partially with the lower electrode; the first and second upper electrodes are separated from each other, in a given horizontal direction, by a given gap; in said direction, the first upper electrode is superimposed on the lower electrode over a distance which is less than said gap; the first and second upper electrodes (121, 122) are in direct contact with the first active layer (that is to say without an intermediate layer between them);
• the invention further relates to a matrix of resistive memories comprising a plurality of sets according to the invention, in which, for each set: the first planar stack of the assembly is electrically connected to an address line of the matrix; the second and third vertical stacks of the assembly are electrically connected, respectively, to two address columns of the matrix, the two address columns being separate.
• the invention also relates to a method of manufacturing an assembly comprising at least two selectors arranged electrically in parallel with each other and each being electrically connected in series to a memory layer forming at least two separate non-volatile resistive memories each associated, respectively, to one of the two selectors, the method comprising the following steps: forming a first planar stack comprising: depositing a first active layer which extends parallel to a given horizontal plane, the first active layer being said memory layer; and a deposit of a first upper electrode and a second upper electrode which both extend over the first active layer and which are electrically isolated from each other, the first upper electrode being laterally delimited by a surface side surface, the second top electrode being bounded laterally by another side surface, an insulating layer extending between a part of the side surface of the first top electrode and a part of the side surface of the second top electrode to electrically insulate the first upper electrode of the second upper electrode; formation of a second stack, which extends obliquely or perpendicular to said plane
• the steps of forming the second and third stacks are carried out by carrying out the following steps: conformal deposition of an overall active layer, a first part of the overall active layer extending opposite the side surface of the first upper electrode, the first part of the overall active layer being in electrical contact with the first upper electrode, a second part of the overall active layer extending opposite the side surface of the second upper electrode, the second part of the overall active layer being in electrical contact with the second upper electrode; separating the overall active layer into at least said second active layer and said one third active layer, disjoint.
• FIG.1 a] and FIG.1 b] schematically represent, according to a section and a top view, a first embodiment of an assembly comprising two non-volatile resistive memories and two selectors according to the invention .
• FIG.2 schematically represents an embodiment of a matrix of sets according to the invention.
• FIG.3 schematically represents, in a section, a development of the first embodiment of the assembly according to the invention.
• FIG.4 schematically represents, in section, a second embodiment of the assembly according to the invention.
• FIG.5 schematically represents, in section, a third embodiment of the assembly according to the invention.
• FIG.6 schematically represents, in section, a fourth embodiment of the assembly according to the invention.
• FIG.7a] to [Fig.11 b] schematically represent, in a section and a top view, steps of the manufacturing process of an assembly according to the invention.
• the invention relates in particular to an assembly 1 comprising at least two non-volatile resistive memories and two selectors, each associated in series with one of these memories.
• the assembly 1 according to the invention makes it possible to adjust the electrical properties of these memories and of these selectors independently, while having a reduced bulk.
• the assembly 1 pools a first planar stack 10, parallel to a given horizontal plane, P, and at least two separate stacks 20, 30, at least part of which extends obliquely relative to the plane P in question, for example vertically.
• planar or horizontal will indicate an orientation parallel to said plane P (for example parallel to within better than 5 degrees).
• the plane P in question is for example parallel to a substrate on which the assembly 1 is made.
• Oblique will indicate an orientation presenting an angle of 90° ⁇ 45° with respect to the plane P, in other words an angle between 45° and 135° with respect to the plane P.
• vertical will indicate an orientation presenting a angle of 90° ⁇ 30° with respect to the plane P and preferably 90° ⁇ 5°.
• each of these two stacks could however be oriented differently, extending for example parallel to a plane making an angle of 60 degrees with said horizontal plane P (or, more generally, an angle comprised between 60 and 80 degrees, For example).
• the first planar stack 10 is a memory stack, while the two “vertical” stacks 20, 30 are selector stacks (for example of the “back-end” type, co-integrable in series with the memories in the BEOL).
• the first planar stack 10 comprises two upper electrodes 121, 122, separated from each other, without direct electrical contact between them.
• Each upper electrode 121, 122 is electrically connected to one of the vertical stacks 20, 30. This arrangement corresponds to two independent type 1 S1 R memory/selector circuits.
• the second and third stacks 20, 30 are in a way arranged in parallel with each other, since, on one side, they are both connected in series to the same memory stack. It will nevertheless be noted that, on the other side, these two selector stacks 20, 30 are connected to separate electrical contacts (40 and 50), electrically isolated from each other.
• At least part of the selector stack 20 extends parallel to a vertical plane. This part of the stack 20 extends opposite a first part 1211 of a lateral surface 1211, 1212 which laterally delimits the first upper electrode 121. This part of the stack 20 extends here parallel to this first part 1211 of lateral surface (parallel at better than 5 or 10 degrees, for example).
• the selector stack 30 extends parallel to a vertical plane. This part of the stack 30 extends opposite a second part 1222 of a lateral surface 1221, 1222 which laterally delimits the second upper electrode 122. This part of the stack 30 extends here parallel to this second part 1222 of lateral surface.
• the various layers (including the electrodes) which extend parallel to the plane P are laterally delimited, each, by one (or possibly some) lateral surface, vertical or at least oblique with respect to the plane P. This or these lateral surfaces are also called flank or “flanks” in the following.
• the layer considered is delimited laterally by a lateral surface comprising two parts (ie: by a first and second flank, here), in practice located opposite one of the 'other.
• the lateral surface in question can nevertheless be continuous, and go all around the electrode without discontinuity, for example when the edge of this layer is circular (this lateral surface then being cylindrical); in this case, the two portions in question correspond to two portions of this continuous surface, located opposite one another.
• These two parts of the lateral surface of the diaper can also correspond to two distinct faces of the circumference of the diaper in question, when this circumference is for example rectangular, as here (rectangular seen from above the diaper).
• the [Fig.1 a] and [Fig.1 b] represent schematically, respectively in section and seen from the side, the first embodiment of the assembly 1.
• the first stack 10 comprises in particular: a first active layer 11; the first upper electrode 121, mentioned above; and the second upper electrode 122.
• the first active layer 11 extends parallel to the plane P.
• the plane P corresponds for example to the surface of a dielectric layer 61 on which the assembly 1 can rest (it will be noted however that, at the end of the manufacturing, the dielectric layer 61 can be part of an overall dielectric coating, protective, in which the assembly is coated).
• the first and second upper electrodes 121, 122 extend over the first active layer 11.
• the first active layer 11 is delimited by an upper surface 112 and a lower surface 113, opposite to the upper surface 112.
• Each upper electrode 121, 122 extends for example over the upper surface 112 of the first active layer 11, against the latter.
• the lower surface 113 of the first active layer 11 rests for example, at least in part, on the dielectric layer 61, parallel to the plane P.
• the first upper electrode 121 is delimited laterally the side surface 1211, 1212 mentioned above. Said lateral surface comprises a first part (or portion) called first flank 1211 below.
• the first upper electrode 121 may, as here, have an overall rectangular shape. It is then delimited laterally by four parts of the side surface (including the first flank 1211 , and another opposite part, called the fifth flank 1212 below), corresponding to the four sides of this rectangle.
• the second upper electrode 122 is delimited laterally by the side surface mentioned above, part of which is called the second flank 1222.
• the second upper electrode 122 can also have an overall rectangular shape. It is then delimited laterally by four parts of said lateral surface (including the second flank 1222, and another opposite part, called the sixth flank 1221 below), corresponding to the four sides of this rectangle.
• the first active layer 11 is delimited laterally, too, by a lateral surface, comprising at least two parts, opposite to each other, called third flank 111 1 and fourth flank 1122.
• the third and fourth flanks 1111, 1122 can be located in the extension of the first and second flanks 1211 and 1222 of the first and second upper electrodes 121, 122; in this case, the first flank 1211 (of the first upper electrode 121 ), and the third flank 11 11 (of the first active layer 11 ) form the same global flank of the first planar stack 11 as a whole (resulting from an overall engraving of the first stack); similarly, the second and fourth flanks 1222, 1122 then form another, global flank of the first stack as a whole.
• the first active layer also has an overall rectangular shape.
• the first planar stack 10 performs a memory function, and the first active layer 11 is a memory layer. It makes it possible to store information, more precisely two data, in a non-volatile manner. Each datum is for example encoded in the form of a resistance value of a portion (conduction channel) of the active layer of said first stack 10.
• the first stack 10 can be of the PCRAM, CBRAM, OxRAM or MRAM type as described in the presentation of the prior art.
• Each conduction channel of the first active layer 11 can have a so-called "low” state, that is to say a low resistance, for example less than a resistance of the order of 10 kfl, or even 10 k£l, or a so-called “high” state, that is to say a high resistance, for example greater than 50 kfl.
• Each conduction channel of the active layer 11 passes from the high state to the low state when a voltage, applied to this layer or a current flowing in the layer, exceeds a programming voltage/current, also called voltage/current of “set” in English.
• Each channel of the first active layer 11 passes from the low state to the high state when a voltage or a current applied to the layer exceeds a voltage/current of erasure, also called voltage/current of “reset” in English .
• the first active layer 11 comprises for example a layer of hafnium oxide (in contact with a titanium layer acting as an oxygen vacancy reservoir), in which case the first stack 10 performs the function of OxRAM.
• the first upper electrode 121 is conductive. It comprises one or more layers, parallel to the plane P. One of these layers can be metallic. Another of these layers can be a layer making it possible to avoid the diffusion of species in the first active layer 11 .
• the nature of the upper electrode 121 is for example chosen according to the type of the first active layer 11 and the material(s) of this layer. It can also be chosen according to the type of material used in the second active layer 21. It can for example comprise a sub-layer adapted to the memory layer 11, on the side of this layer, and on the side of the first layer. active, and another sub-layer, adapted to the selector, on the side of the second active layer 21 . Indeed, some selectors may require the implementation of one or more so-called active electrodes, in order to operate. These are, for example, selectors of the TS (for “Threshold Switch” in English) or MIEC (“Mixed ion-electronic conduction” in English) type.
• a TS type selector implements the diffusion of metal ions such as silver ions. These ions can be brought by a so-called "active" electrode, in contact with the selective layer and which includes money.
• an MIEC-type selector implements the diffusion/migration of metal ions such as copper ions, in which case an active electrode in contact with the selector layer advantageously comprises copper.
• the first upper electrode 121 can be active with respect to the second active layer 21, that is to say comprise elements contributing to the conduction of the selector layer.
• the first upper electrode, active can then comprise silver or copper. It comprises for example several layers of which at least one, and if possible the layer in contact with the second active layer 21 , comprises silver or copper.
• the second active layer 21 may also comprise a plurality of layers, at least one layer of which, for example in contact with the first upper electrode 121, comprises elements contributing to the conduction of the selector layer.
• This is, for example, a copper or silver layer.
• the copper or silver layer is for example placed on the surface of the second active layer 21 in contact with the first upper electrode 121, in the extension of this electrode.
• the conductive layer 22 presented below, and which connects the second active layer 21 opposite the electrode 121 can also comprise such a layer or sub-layer (playing for example the role of active electrode), adapted to the active layer 21 .
• the first upper electrode 121 extends over a first portion 1210 only of the upper surface 112 of the first active layer 11, in particular at the level of a first portion 114 of the first layer. active 11 (part of portion 114 being located directly above a lower electrode 13).
• the second upper electrode 122 is also conductive. It can also contribute to the operation of the third active layer 31 in the same way as the first upper electrode 121 . It comprises, in the same way as the first upper electrode 121, one or more layers, parallel to the plane P.
• the second upper electrode 122 extends over a second portion 1220 of the upper surface 112 of the first one active layer 11, in particular at the level of a second portion 115 of the first active layer 11 (a part of the second portion 115 also being located directly above the lower electrode 13).
• the fifth and sixth flanks 1212 and 1222 are facing each other and at least spaced apart by a first distance D1 (corresponding for example to the width of a trench separating these two electrodes , obtained by etching).
• the fifth and sixth flanks 1212 and 1222 are also separated by an insulating layer 62, electrically insulating the electrodes 121, 122 from each other. Indeed, the finalized assembly 1 is buried in a dielectric material 62 making it possible to isolate various elements from one another, including the first and second electrodes 121, 122.
• the second vertical stack 20 plays the role of selector here, and the second active layer 21 is a selector layer. That is to say that it is configured to modify its conductivity according to a voltage applied to this layer, and/or according to an electric current which passes through it.
• a threshold voltage is defined beyond which the second active layer 21 is in a so-called “on” state. That is to say that at least part of the second active layer 21 is then conductive. Conductive means that its resistance is less than 10 kfl.
• the selector layer 21 is in a so-called "blocked” state. That is to say that the resistance of the second active layer 21 is for example greater than or equal to 100 kfl at least.
• active layer 21 may however have a resistance varying according to the voltage applied.
• the resistance can vary exponentially so that it is on the order of 10 kfl or a few tens of k ⁇ just before switching from off to on.
• the on-state is preferentially metastable. That is to say that the second active layer 21 is initially in the off state and that it only has an on state when a voltage applied to this layer becomes greater than the threshold voltage.
• the second active layer 21 can keep an on state provided that a current or a voltage applied to said layer 21 is greater than a given holding current.
• the second active layer 21 comprises for example a chalcogenide, for example an alloy based on selenium, germanium, antimony and nitrogen.
• the second stack 20 is then an ovonic selector or OTS for "Ovonic Threshold Switching" in English.
• the second active layer 21 can also comprise a material such that the second stack 20 is an unstable conductive bridge selector or TS for "Threshold Switch” in English, or an electronic and ionic conduction selector or MIEC for "Mixed ion -electronic conduction” in English or even a metal-insulating transition selector.
• an active top electrode may be present on either side of the second active layer.
• the third stack 30 comprises at least one third active layer 31, which is a selector layer.
• the electrical characteristics of the second and third active layers 21, 31, including at least the threshold or sustain voltages/currents, are close, or even identical.
• the reduction in the size of assembly 1 results in particular from the sharing of the same memory pad for two selectors, and from the oblique orientation of at least part of the second active layer 21, located opposite -to-vis the first flank 1211 of the first upper electrode 121, and at least part of the third active layer 31, located vis-à-vis the second flank 1222 of the second upper electrode 122.
• the first upper electrode 121 electrically connects the first active layer 11 with the second active layer 21.
• the second upper electrode 122 electrically connects the first active layer 11 to the third active layer 31 .
• the first active layer 11 is common to the second and third vertical stacks 20, 30. In other words, it is the same first active layer 11 which is electrically connected to the second active layer 11 on the one hand and to the third active layer 31 on the other hand.
• the second and third active layers 21, 31 are separated from each other. They are electrically isolated from each other because only in contact by the first active layer 11 .
• electrically insulated is meant without direct electrical contact between them. In other words, there is no element, conductive in all circumstances (for example metallic), connecting them directly.
• the second active layer 21 can be electrically connected between a first electrical contact 40, upper, and the first upper electrode 121.
• the third active layer 31 can be electrically connected between a second electrical contact 50, upper, and the second upper electrode 122.
• the first and second contacts 40, 50 are electrically isolated from each other.
• the memory and selector assembly 1 can be buried in a dielectric material, for example an insulating filler oxide 62 such as a silicon oxide.
• the first upper electrode 121 extends over the first portion 1210, called the first surface, of the upper surface 112 of the first active layer 11. At least part of the first portion 114 of the first active layer 11 is located directly above the first surface 1210.
• the first upper electrode 121 influences the electrical conduction at the level of the first portion 114. For example, the application of a voltage between the first upper electrode 121 and the lower surface 113 of the first active layer 11, makes it possible to change the first portion 114 (first conduction channel) from its highly resistive state to its low resistive state, or vice versa.
• the first portion 114 can therefore ensure, locally, a memory function.
• the second upper electrode 122 influences the electrical conduction at the level of the second portion 115 of the active layer 11.
• the second portion 115 can therefore also ensure, locally, a memory function.
• the first active layer 11 therefore comprises two portions 114, 115 each performing the memory function and which can be operated independently.
• the first planar stack 10 comprises two memories. Each memory is electrically associated (in series) with one of the selector stacks 20, 30.
• the assembly 1 thus comprises two type 1 S/1 R type memory/selector circuits (the selector being connected in series with the resistive memory element), which can be operated independently of one another.
• the arrangement of the first portion 114 depends on the arrangement of the first upper electrode 121 on the first active layer 11 and therefore on the position and dimensions of the first surface 1210.
• the first upper electrode 121 extends along an edge of the upper surface 112 of the first active layer 11.
• the edge in question is in particular arranged directly above the first and third flanks 1111, 1211.
• the first upper electrode 121 extends from this edge over a second distance D2.
• the second distance D2 is measured perpendicular to said edge.
• the first surface 1210 therefore also extends, from this edge, over the second distance D2.
• the electrical properties of the first portion 114 partly depend on its dimensions.
• the particular structure of assembly 1 thus makes it possible to adjust the electrical properties of the resistive memory associated with first portion 114, depending on the arrangement of first upper electrode 121 on first active layer 11, in particular depending of the extent of this first electrode, and depending on its positioning more or less directly above the lower electrode 13.
• assembly 1 makes it possible to adjust the electrical properties of the resistive memory associated with the second portion 115, depending on the arrangement of the second upper electrode 121 on the first active layer 11.
• a portion of the second active layer 21, called the third portion 211 is in contact with the first flank 1111 of the first upper electrode 121.
• the first upper electrode 121 can also influence the electrical conduction at the level of this third portion 211
• the application of a voltage between the first upper electrode 121 and an opposite surface of the second active layer 21, allows the third portion 211 to pass from its off state to its on state.
• the third portion 21 1 therefore provides, locally, a selector function.
• the electrical properties of the third portion 211 also partly depend on its dimensions. Its dimensions of the third portion 211 depend in particular on the surface (ie: the area) of the first flank 1111.
• the adjustment of the surface of the first flank 111 allows therefore to adjust the electrical properties of the selector associated with the third portion 211.
• the surface of the first flank 1111 is for example adjustable according to the thickness D3 of the first upper electrode 121.
• Set 1 therefore makes it possible to independently adjust the dimensions of the memory associated with the first portion 111 and of the selector associated with the third portion 211 .
• the electrical properties of said selector and of said memory can be adjusted independently.
• the adjustment of the surface (i.e.: of the surface extent) of the second flank 1222 makes it possible to adjust the electrical properties of the selector associated with the fourth portion 311 .
• the assembly 1, comprising two circuits 1 S1 R, makes it possible to independently adjust the electrical properties of each selector and of each memory.
• the first planar stack 10 comprises a lower electrode 13, in contact with the lower surface 113 of the first active layer 11 .
• a part of the first upper electrode 121 extends opposite a part of the lower electrode 13.
• the part of the first upper electrode 121 is superimposed by vertical projection on the lower electrode 13.
• vertical projection is meant in a vertical direction as previously defined.
• the fifth flank 1212 is located above the lower electrode 13, directly above it, while the first flank 1211 is offset laterally with respect to the lower electrode 13 and is not located directly above the lower electrode 13, above the latter.
• plumb is meant aligned in a vertical direction.
• the memory associated with the first portion 114 of the active layer 114 is then formed between the facing surfaces 1230 (ie: in superposition) of the first upper electrode 121 and the lower electrode 13.
• the lateral offset between the first upper electrode 121 and the lower electrode 13 allows (like the reduced width D2 of the upper electrode) to obtain, for the memory in question, an effective surface (in this case a surface on which there is superposition between the electrodes 121 and 13) smaller that F 2 where F is an etching fineness of the manufacturing technology considered at the level considered in the BEOL.
• F 2 an etching fineness of the manufacturing technology considered at the level considered in the BEOL.
• the area S 1230 of the surface 1230 opposite the first electrode 121 can then be expressed as (see FIG. 1b):
• the surface 1230 is then equal to 1/3 F 2 , clearly less than F 2 (D13 is the width of the lower electrode 13, parallel to the plane P, and in a direction perpendicular to X - therefore in a direction perpendicular to that corresponding to the width D5).
• the second upper electrode 122 extends here vis-à-vis a part of the lower electrode 13 (or by projecting vertically thereto), plumb of it.
• the sixth flank 1221 is located above the lower electrode 13, directly above the latter, while the second flank 1222 is offset laterally with respect to the lower electrode 13: it is not located plumb with the lower electrode 13 (it is not located above the latter).
• a certain variability in the electrical characteristics of the first planar stack 10 can be caused by manufacturing steps of said stack 10 or vertical stacks 20, 30 introducing defects in part of the first active layer 11.
• the defects are generally localized at the flanks of the first active layer 11 (therefore in particular at the level of the third and fourth flanks 1111, 1122), exposed to etching or deposition steps.
• the electrical characteristics at the level of these flanks are then modified locally.
• each memory associated with portions 114, 115 of the first active layer is then remote from the sides 1111, 1122 of the first active layer 11. They are therefore little influenced by the electrical characteristics at the level of the third and fourth sides 1111, 1122.
• Each memory thus has minimal variability in its electrical characteristics.
• the first distance D1 separating the first and second upper electrodes 121, 122 is for example between 40 nm and 90 nm.
• the third distance D4 separating the third and fourth flanks 1111, 1122 is for example between 60 nm and 110 nm, or even between 80 nm and 100 nm. This reduces the variability of the electrical characteristics of the memory stack, fixed by those of the conduction channels, located far from the sides (far from the edges).
• each vertical stack 20, 30 extends, from the first flank 1111 of the first upper electrode 12, over a fourth distance D6.
• this distance corresponds in some way to the total thickness of the second stack 20 and of an optional metallic layer 42 which covers it.
• the first flank 1111 is offset laterally, with respect to the lower electrode 13, by a fifth distance D7, which is not zero.
• the first upper electrode 121 is therefore only partially superimposed on the lower electrode 13.
• the width D5 of the lower electrode 13 is at least equal to the fineness of etching, F, fineness which is for example 40 nm. Finesse imposes in particular a minimum width at a lower via 70, crossing the dielectric layer 61 to connect the lower electrode 13. The width D5 of the lower electrode 13 and a width of the lower via 70 are here equal to one another. The width D5 is therefore at least equal to the fineness F.
• the first distance D1, separating the first and second upper electrodes 121, 122 advantageously depends on the width D5 of the lower electrode 13.
• the first distance D1 is preferably strictly less than the width D5.
• the conduction channels can still be established if no vis-à-vis exists between the upper electrodes 121, 122 and the lower electrode 13.
• this scenario can increase the variability conduction channels being established in the first active layer 11 .
• first and second electrical contacts 40, 50 respectively have a width D8 and D9 at least equal to this fineness F (i.e.: limited by the fineness F), and separated by the first distance D1.
• the set 1 can have the following dimensions:
• D11 is the width of the upper electrodes 121, 122, parallel to the plane P, and in a direction perpendicular to X - therefore in a direction perpendicular to that corresponding to the width D5.
• the side surface of the upper electrodes 121, 122 is offset laterally with respect to the lower electrode 13 by a distance D11 in the direction perpendicular to X.
• the total surface S T0T occupied by set 1 (that is to say its footprint, including a peripheral zone surrounding the set, and which stops halfway between this set and the neighboring sets ) can be expressed as:
• D14 is equal to D7, in practice.
• the total surface S T0T is then equal to 15
• an occupied equivalent surface S 1S1R related to a single circuit 1 S1 R is therefore equal to 7.5 ⁇ F 2 , here. This is greater than the surface occupied for a circuit 1 S1 R in a conventional purely planar embodiment, for which this surface can be 4*F 2 (including the peripheral zone mentioned above, which surrounds the memory point).
• the arrangement presented here offers the advantage of being able to adjust, independently, the surfaces of each memory and of each selector (and of having effective surfaces, for the active zones, which are less than F 2 ).
• the second active layer 21 for example comprises a vertical portion and two planar portions, at each of its ends. View in cut, it thus forms an "S" which can be accommodated under the first contact 40, in line with the latter, without protruding from a lateral point of view.
• upright we mean plumb.
• the two planar portions of the active layer 21 are optional.
• the active layer 21 could be entirely oriented vertically and placed under the first contact 40.
• the third active layer 31 at least partially oriented vertically, allows the first active layer 11 and/or the second upper electrode 122 to extend as far as the second contact 50 without increasing the overall size of set 1 (in the X direction).
• the storage density offered by a matrix of memory points depends in part on the spacing imposed between two-by-two addressing lines and/or two-by-two addressing columns. The smaller this spacing, the higher the storage density of the final matrix. This spacing, which corresponds to the first distance D1 between the first and second electrical contacts 40, 50, intended to be connected to the addressing rows/columns, or which directly form these addressing rows/columns, is limited in practice by the fineness F of engraving.
• the first planar stack 10 is also electrically connected to the lower via 70 mentioned above (or to another equivalent conductive element).
• the dielectric layer 61 on which the first planar stack 10 rests is traversed by this lower via 70.
• the lower via 70 can thus be electrically connected to the lower surface 113 of the first active layer 11 via the lower electrode 13
• the lower via 70 and the lower electrode 13 can moreover be made of the same material and in the extension of one another, so that they are in fact merged.
• the first active layer 11 is electrically connected in series between the first upper electrode 121 and the conductive via 70 on the one hand and the second upper electrode 122 and the conductive via 70 on the other hand.
• the lower electrode 13 may comprise one or more sub-layers, for example acting as a reservoir layer for oxygen vacancies (such a layer being for example made of titanium), or an insulating layer role opposing to the passage of oxygen (titanium nitride layer, for example), or play yet another role in the operation of the first stack 10 as a memory stack.
• the lower electrode 13 extends over part, here over part only, of the lower face 114 of the first active layer 11 .
• the second stack 20 can, as here, comprise a conductive layer 22.
• the conductive layer 22 electrically connects the second active layer 21 to the first upper contact 40. It is arranged here between the second active layer 21 and the first upper contact 40.
• the conductive layer 22 extends over the second active layer 21, against the latter.
• at least part of the conductive layer 22 also extends parallel to the first flank 1211 and opposite this first flank 1211.
• This conductive layer 22 can, for an OTS type selector, for example , be based on titanium nitride, tantalum nitride, tungsten, or tungsten nitride, or even carbon.
• the conductive layer 22 and the second active layer 21 of the second stack 20 advantageously extend, in the portion facing the first flank, at a distance D10 advantageously less than or equal to 20 nm, or even 10 nm . This is, in other words, the height of the selector.
• the third vertical stack 30 may comprise a conductive layer 32 electrically connecting the third active layer 31 to the second upper contact 50.
• the first electrical contact 40 may comprise a first upper via 41 which extends for example vertically from the second stack 20.
• the latter can also comprise a first metal layer 42, electrically connecting the second stack 20, interposed between them.
• the first metallic layer 42 extends for example partly over the second stack 20 by covering a vertical part and a planar part of said second stack 20.
• the first metallic layer 42 is the conductive layer 22 of the second stack 20.
• the first metal layer 42 could also form one of the addressing columns of the matrix, the via 41 being a connection via for this column, possibly offset with respect to the assembly 1 .
• the second electrical contact 50 may comprise a second upper via 51 extending, for example, vertically from the third stack 30. It may also comprise a second metallic layer 52, electrically connecting the third stack 30.
• the second metallic layer 52 can also extend over the third stack 30 by covering a vertical part and a planar part.
• the second active layer 21 is electrically connected to the first upper electrode 121 of the planar stack 10.
• the second active layer 21 is directly electrically connected to the first upper electrode 121. More precisely, it comes into direct contact against the first side 121 1 of this electrode. A surface of the second active layer 21 is thus in contact with this flank 1211.
• an intermediate conductive layer could however be interposed between the active layer 21 and the first flank 1211.
• the second active layer 21 has a portion disposed between the conductive layer 22 of the second stack 20 and the first upper electrode 121.
• the application of a potential difference between the conductive layer 22 and the first upper electrode 121 during an initial forming operation causes the formation of a conduction channel, in the second active layer 21, at the level of a zone located opposite the first flank 1211 , of the first upper electrode 121.
• the position of the conduction channel is therefore controlled (and, in this case, it is also far from the edges - i.e. from the ends - of the first active layer), making it possible to reduce the variability of the second vertical stack 20.
• the second active layer 21 can comprise a planar portion, coming to cover a part of the first upper electrode 121 .
• the assembly 1 can then comprise an insulating layer 141, 142. This is for example a layer of dielectric material, such as silicon nitride, in particular to form a hard mask. At least a portion 141 of the insulating layer is placed between said planar portion of the second active layer 21 and the first upper electrode 121, for the electrically isolate from each other.
• the insulating layer 14 can also extend continuously over the two upper electrodes 121, 122 of the first planar stack 10, as for the variant of the first embodiment shown in [Fig.3],
• the insulating layer 14 is for example delimited by at least one side surface. When the insulating layer 14 is continuous and in one piece, it is then delimited by a single side surface 1411, 1422.
• the side surface of the insulating layer 14 comprises two parts, opposite to each other, called ninth flank 1411 and tenth flank 1422 below, for example located in the extension of the first and second flanks 1211, 1222.
• the insulating layer 14 is divided into two separate portions 141, 142, it is then limited by two side surfaces, each delimiting a portion 141, 142.
• the first portion 141 of the insulating layer can be located directly above the first upper electrode 121, and can comprise, in addition to the ninth flank 1411, another part of its lateral surface, called here eleventh flank 1412.
• the second part 142 can be delimited, in addition to the tenth flank 1422, by another flank called the twelfth flank 1421.
• the eleventh and twelfth flanks 1412, 1421 are for example located respectively in the extension of the seventh and eighth sides 1212, 1221, first and second upper electrodes 121, 122.
• FIG.4 schematically represents the second embodiment of the set 1 of memories and selector. Unlike the embodiment of [Fig.1 a], [Fig.1 b] and [Fig.3], the second active layer 21 of the second stack 20 is not in contact with the entire first flank 1211 of the first upper electrode 121 .
• the assembly 1 further comprises a spacer 151, electrically insulating, which extends against a part of the side surface 1211, 1222 of the first upper electrode 121, and against the side surface 1111 , 1122 of the first active layer 11 .
• This spacer 151 extends in particular against the third flank 1111 of the first active layer 11 and against a part of the first flank 1211 of the first electrode 121. It makes it possible to reduce the surface of the second active layer 21 in contact with the first flank 1211, making it possible to adjust the electrical properties of the selector established in this layer. Indeed, the reduction of the thickness D3 of the first upper electrode 121 may present a limit, in particular technological.
• this spacer 151 Due to the presence of this spacer 151, only an upper strip 12111 of the side surface of the first electrode 121, in particular of the first flank 1211, is in contact with the second active layer 21. Furthermore, the spacer 151 protects the flank, 1111 of the first active layer, in particular from possible contamination, for example during the manufacturing steps of the assembly, such as the operations for forming the second and third stacks 20, 30.
• the first upper electrode 121 can also be surmounted by an additional conductive layer 121′, vertically extending the upper electrode 121 (and its first flank 1211). In this way, the first flank 1211 has a total thickness D3 equal to the initial thickness D31 of the first electrode 121 plus an additional thickness D32 of the additional conductive layer 12T.
• the upper band 12111 of the first flank 1211 left bare by the spacer 151 can thus be equal to the additional thickness D32, or even less.
• a part of the spacer 151, or possibly another similar spacer can extend partially between, on the one hand, the first stack and, on the other hand, the third active layer 31. It can in particular extend on the second flank 1222 and the fourth flank 1122 by only partially covering the second flank 1222, in order to expose an upper strip of the second upper electrode, against which the third active layer 31 is in contact.
• the [Fig.5] schematically shows, in section, the third embodiment of the assembly 1.
• the first active layer 11 is divided into two parts 116, 117. It comprises a first part 116, and a second part 117 separated from the first part 116.
• the first part 116 is electrically connected between the first upper electrode 121 and the lower electrode 13.
• the first part 116 of the first active layer 11 extends for example directly above the first upper electrode 121, in the extension of the latter. It also extends, in part, over the lower electrode 13 in order to establish electrical contact.
• the second part 117 of the active layer 11 also extends directly above the second upper electrode 122, in the extension of the latter.
• the second part 117 extends, in part, over the lower electrode 13, in order to establish an electrical contact.
• the first and second parts 116, 117 are advantageously separated by the first distance D1.
• the physical separation between the two parts 116, 117 makes it possible to electrically isolate the conduction channels which can be established between each upper electrode 121, 122 and the lower electrode 13. In this way the memories can be operated independently of one of the other, even when the distance D1 between the two parts 116, 117 is small, less than 60 nm, or even less than 40 nm.
• the conduction channels can have a lateral dispersion which can reach 40 nm, or even 60 nm.
• the first and second parts 116, 177 can be in contact with each other, while remaining separated from each other by an insulating barrier, such as a dielectric layer.
• the subdivision of the first active layer 11 into two parts (116 and 117) results here from an overall etching, of a block, of an initial stack comprising an initial active layer, in one piece , and, above, an upper electrode layer, in one piece (said etching separating this electrode layer to obtain the first and second upper electrodes 121, 122).
• the [Fig.6] schematically represents the fourth embodiment of the assembly 1.
• the assembly 1 here comprises a fourth planar memory stack 10′.
• the first planar stack 10 and the fourth planar stack 10' are oriented head to tail.
• the assembly also includes an insulating layer 14 extending between the first and fourth planar stacks 10 and 10', so as to electrically insulate them from each other.
• the fourth memory stack 10' comprises a fourth active layer 16, a third electrode 171 and a fourth electrode 172.
• the fourth active layer 16 is also a memory layer.
• the fourth active layer 16 is divided into a first part 161 and a second part 162.
• the first and second upper electrodes 121, 122 are separated from the third and fourth electrodes 171, 172 by the insulating layer 14.
• the fourth active layer 16 here its first and second parts 161, 162, extend over the third and fourth electrodes 171, 172 against and above them.
• the third and fourth electrodes 171, 172 are advantageously distinct and separated by an insulator 62, such as a dielectric material. They have no direct electrical contact between them and are thus electrically isolated from each other.
• the first planar stack 10 comprises a lower electrode 13, the first active layer 11 being connected to the lower electrode 13.
• the fourth planar stack 10' can also comprise a fifth electrode 18, extending over the fourth active layer 16, above this one.
• the fourth active layer 16 is thus electrically connected between the third and fourth electrodes 171, 172 on the one hand, and the fifth electrode 18 on the other hand.
• Fifth electrode 18 can also be electrically connected to a via, called upper via 70', located above fourth planar stack 10'.
• the upper via 70' is arranged between the first and second electrical contacts 40, 50, from a lateral point of view.
• the third electrode 171 is also delimited by a lateral surface comprising at least one flank 1711 , called the first additional flank, oriented vertically.
• the first additional flank 1711 is parallel to the first flank 1211 of the first upper electrode 121.
• the first additional flank 1711 is preferentially aligned with the first flank 1211 of the first upper electrode 121, located in the extension thereof.
• the overall stack formed by the first planar stack 10, the insulating layer 14 and the fourth planar stack 10' which covers it can be delimited laterally during the same overall etching operation, producing a same global flank, overall, which extends over the entire height of this global stack (and this on each side, or on each lateral face of this global stack).
• the second active layer 21 of the second vertical stack 20 extends vertically over an entire part of the height of this overall stack (here, over the entire height of this overall stack, and even more). It extends not only opposite the first flank 1211, the first upper electrode 121, but also opposite the first additional flank 1711, the third electrode 171, parallel to these flanks 1211, 1711.
• the second active layer 21 of the second vertical stack 20 can comprise two separate conduction channels 211, 212 (one, 211, located opposite the first side 1211, and the other, 21 1, located opposite the first additional flank 1711 ), independently addressable one of the other, each allowing separate information to be encoded.
• the single active layer 21 thus makes it possible to form two distinct “selectors”.
• the third active layer 31 extends vertically over an entire part of the height of the overall stack in question (here, over the entire height of this overall stack, and even more ). It extends not only opposite a second flank 1222 partially delimiting the second upper electrode 122, but also opposite a second additional flank 1722 of the fourth electrode 172, parallel to these sides 1222, 1722.
• the fourth active layer 16 is divided into a first part 161 and a second part 162. Said first part 161 extends over the third electrode 171, for example in the extension of the latter. Said second part 162 extends, in the same way, over the fourth electrode 172.
• the fifth electrode 18 is insulated from each vertical stack 20, 30. It is for example insulated by means of additional insulating spacers 152, extending on either side of the fifth electrode 18.
• the fifth electrode 18 can thus have a smaller width than the lateral extension of the fourth active layer 16 (as for the lower electrode 13 and the first active layer 11).
• the fifth electrode 18 advantageously has a width such that it has at least one part facing each of the third and fourth electrodes 171, 173.
• the [Fig.2] represents an equivalent electrical diagram of the assembly 1 as described with reference to [Fig.1 a], [Fig.1 b], [Fig.3], [Fig.4] and [Fig.5], [Fig.2] more broadly represents two assemblies 1, 1' as described above, belonging to a matrix 3 of resistive memories.
• Sets 1 and T are preferably identical, connected between two addressing lines 81a, 81b and two addressing columns 82a, 82b.
• Set 1 as described above is notably connected between a line 81a and two columns 82a, 82b.
• the electrical diagram of assembly 1 comprises two circuits connected to a common line 81a.
• a first circuit comprises the first portion 114 of the first active layer 11, connected in series with the second vertical stack 20. Both being connected between the lower electrode 13 and the first electrical contact 40.
• the lower electrode 13 is for example connected to the address line 81a and the first electrical connector is connected to a first addressing column 82a.
• a second circuit comprises the second portion 115 of the first active layer 11, connected in series with the third stack 30. Both being connected between the lower electrode 13 and the second electrical contact 50.
• the second electrical connector is connected to a second addressing column 82b.
• the [Table 1] below shows a voltage bias diagram of the address rows and columns 81a-b, 82a-b to perform the operations of programming a low resistive state (SET), or erasing (writing of a highly resistive state, or RESET) in each of the first and second memory stacks 20, 30.
• This is a "V/2" type bias diagram.
• U/2 is lower than the threshold voltage of the first active layer 11 .
• the invention also relates to a method of manufacturing a set 1 of memories and selectors as described previously. An implementation mode of said method is described with reference to [Fig.7a] to [Fig.11 b],
• the [Fig.9a] and [Fig.9b] represent four first intermediate stacks 912a, 912b, 912c, 912d.
• the first four intermediate stacks can be produced simultaneously, with a view to manufacturing a matrix 3 of resistive memories.
• the description below relates to a single first intermediate stack 912a. However, it can be transposed to the first neighboring intermediate stacks 912b, 912c, 912d.
• the first intermediate stack 912a comprises, for example from the surface of an address line 81a, a lower via 70 and a first planar stack 10 comprising a lower electrode 13, a first active layer 11, a first upper electrode 121 and a second upper electrode 122, each extending over the first active layer 11.
• the first and second electrodes 121, 122 are surmounted by an insulating layer 14.
• the first active layer 11 is a memory layer. It is divided into two parts 116, 117 separated from each other.
• the first intermediate stack 912a thus makes it possible to obtain, in the long term, an assembly 1 according to the embodiment of [Fig.5],
• the manufacturing method initially comprises a step of forming the first planar stack 10.
• This step may include a sub-step of forming the lower electrode 13, extending for example in the extension of the lower via 70.
• the lower via 70 and the lower electrode 13 are not differentiated in [Fig.7a] to [Fig.7b] so as not to overload the figures.
• the lower electrode 13 can be made from a TiN alloy.
• a dielectric layer 62 buries the address line 81 a and levels the lower electrode 13.
• Each address line 81a, 81b and each lower via 70 can be produced by implementing a damascene process. This involves, for example, the deposition of a dielectric material, the etching of cavities intended to form the address lines 81a, 81b or the lower vias 70 and the filling of said cavities with a coating or "liner" in English, for example titanium nitride, and a conductive material, for example tungsten, followed by chemical-mechanical polishing (or CMP). Address lines 81 a, 81 b are buried in dielectric layer 61 . Each lower via 70 passes through the dielectric layer 61 .
• Each lower electrode 13 is made in the extension of each lower via. Said dielectric layer 61 and each lower electrode 13 are upgraded for example by means of planarization.
• the forming step further comprises a sub-step of forming a first layer 910a, extending parallel to the plane P, as illustrated by [Fig.7a] and [Fig.7b],
• the plane P corresponds for example to the surface of the lower electrode 13 and of the dielectric layer 61 on which the first layer 910a rests.
• the first layer 910a is intended to form the first active layer 11 .
• the first planar stack 10 will provide the memory function (double memory, for example).
• the step of forming the first stack 10 also includes a sub-step of forming a second layer 910b, intended to form the first and second upper electrodes 121, 122.
• the second layer 910b extends parallel to the plane P, and rests on the first layer 910a.
• the second layer 910b is formed from a conductive alloy, for example TiN.
• the forming step also includes a sub-step of delimiting the first and second layers 910a, 910b so as to form the first active layer 11 .
• the first active layer 11 is thus delimited by third and fourth flanks 1111, 1122.
• the delimitation sub-step is also carried out so as to obtain the first upper electrode 121 and the second upper electrode 122.
• the first upper electrode 121 is thus delimited laterally by at least a first flank 1211 and the second upper electrode 122 is delimited by at least a second flank 1222.
• the first active layer 11 and the upper electrodes 121, 122 are delimited laterally during the same etching step.
• the separation of the first and second upper electrodes 121, 122 is also carried out during the delimitation sub-step.
• the delimitation is for example carried out by a first engraving, as illustrated by [Fig.8a] and [Fig. 8b], forming a trench dividing the second layer 910a into two parts, intended to form the upper electrodes 121, 122.
• the trench can be filled with a dielectric material 62.
• the dielectric material 62 is advantageously planarized so as to be flush with the upper surface of the upper electrodes.
• the first layer 910a can also be divided into two parts during the first etching.
• the first active layer 11 comprises two distinct parts 116, 117, in the extension of the first and second upper electrodes 121, 122.
• the first intermediate stack 912a may also comprise an insulating layer 14, extending over the upper electrodes 121, 122.
• the method can also comprise a sub-step of depositing an insulating layer on the first and second layers 910a, 910b so that the delimitation of the latter also makes it possible to delimit the insulating layer 14.
• the deposition of the insulating layer can take place between the first and second engravings described above. In this way, the insulating layer 14 extends continuously from the first upper electrode 121 to the second upper electrode 122.
• the [Fig.10a] and [Fig.10b] represent a second intermediate stack 913a comprising a global active layer 9131, covering the first planar stack 10 and the surface of the dielectric layer 62 not covered by the planar stacks 10
• the global active layer 9131 is intended to form the second and third active layers 21, 31 of the first and second vertical stacks 20, 30. It is for example formed based on an ovonic alloy such as Ge-Se-Sb- NOT.
• the second intermediate stack 913a may also comprise an overall conductive layer 9132 extends over the overall active layer 9131 , intended to form the conductive layers 22, 32 of the second and third stacks 20, 30. It may also comprise an additional conductive layer, intended to form at least part of the first and second electrical contacts 40, 50. Here, the additional conductive layer may be intended, after etching, to form addressing columns of the matrix.
• the formation of the second and third stacks 20, 30 initially comprises a sub-step of depositing the overall active layer 9131 on the first planar stack 10 and on the dielectric layer 61.
• a first part at least of the overall active layer 9131 extends parallel to the first and second flanks 1211, 1222 of the upper electrodes 121. It extends in particular at least partly opposite the first flank 1211 of the first upper electrode 121 and the second flank 1222 of the second upper electrode 122.
• the deposition of the global active layer 9131 is carried out in a conformal manner, for example so as to present a substantially constant thickness at all points.
• substantially constant is meant to within 20% at least, for example within 10% or even 5%, or even better.
• the method may further comprise a sub-step of depositing the conductive layer 9132, for example by conformal deposition, so that it extends over the global active layer 9131 .
• the method can also comprise a sub-step of depositing the additional conductive layer, for example also by conformal deposition, so that it extends over the conductive layer 9132.
• the [Fig.11 a] and [Fig.11 b] represent a set 1, different from the second intermediate stack 913a of [Fig.10a] and [Fig.10b] in that it comprises second and third stacks 20, 30, arranged on either side of the first planar stack 10.
• the method comprises the etching of the overall active layer 9131 so as to separate it into a second active layer 21 and a third active layer 31 .
• the etching is performed so that at least a first part of the second active layer 21 extends parallel to the first side 121 1 of the first upper electrode 121 , opposite this first side 1211 and so that at least a second part of the third active layer 31 extends parallel to the second flank 1222 of the second upper memory electrode 122, facing this second flank 1222.
• the etching can be stopped before reaching the insulating layer 14.
• the global active layer 9131 and the first planar stack 10 could be etched in one go, thus dividing each layer into two distinct parts. .
• the etching is stopped before reaching the lower electrode 13.
• the etching step 922 can also etch the conductive layer 9132 in two parts at the same time so that they respectively form the conductive layers 22, 32, extending for example respectively over the second and third active layers. 21 , 31 .
• the etching step divides at least the 9132 layer.
• the formation of the electrical contacts 42, 52 is for example carried out at the same time as the step of etching the conductive layer 9132. It thus makes it possible to electrically separate the electrical contacts 42, 52 from each other.
• the etching step can also make it possible to electrically separate the second neighboring intermediate stacks 913b, 913c, 913d by separating the layers 9131, 9132 deposited on each first planar stack 10.
• the [Fig.11 a] and [Fig.11 b] represent sets 1 of resistive memory 1 forming a matrix 3 of resistive memories.
• Each of the second and third vertical stacks 20, 30 are connected to separate addressing columns.
• the method may include forming an address column.
• the assemblies 1 are buried under an additional layer of dielectric 62.
• the additional layer of dielectric 62 is leveled with each electrical contact by planarization.
• the addressing columns are formed, for example by implementing a damascene process.

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